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1. 发明专利

JPS5880803A METHOD OF CORRECTING RESISTANCE VALUE 失效
公开(公告)号：JPS5880803A
公开(公告)日：1983-05-16
申请号：JP17835081
申请日：1981-11-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI , MORI MASAMICHI
IPC分类号： H01C17/24 , H01L21/822 , H01L27/04

2. 发明专利

JPS5875868A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5875868A
公开(公告)日：1983-05-07
申请号：JP17271781
申请日：1981-10-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI , MATSUMOTO TADASHI
IPC分类号： H01L29/43 , H01L21/28 , H01L29/45 , H01L29/46
摘要： PURPOSE:To provide high heat resistance, excellent reproducibility and characteristic stability by employing nitrided titanium having excellent diffusion preventing effect as a diffusion barrier layer. CONSTITUTION:In the function of each layer forming electrode, a layer 3 is a titanium itself or a contact layer for forming an ohmic contact or Schottky barrier with good reproducibility of titanium arsenide compound formed by heat treatment, a nitrided titanium layer 4 is a diffusion barrier layer for preventing the production of compound such as a platinum and arsenic, platinum and gallium or the like, a platinum layer 5 is an intermediate layer to be inserted to enhance the contact layer to the layer 4 of a gold layer 6, and the layer 6 is a conductor. In this manner, a diffusion barrier layer due to nitrided titanium is filled, thereby preventing the mutual reaction of the electrode metal and the semiconductor except the titanium, enhancing the heat resistance, and providing excellent characteristic reproducibility and stability.

3. 发明专利

JPS5848458A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5848458A
公开(公告)日：1983-03-22
申请号：JP14585681
申请日：1981-09-16
申请人： NIPPON ELECTRIC CO , NIPPON TELEGRAPH & TELEPHONE
发明人： ENDOU SHIGENARI , KANAMORI SHIYUUICHI
IPC分类号： H01L29/872 , H01L29/47 , H01L29/46
摘要： PURPOSE:To manufacture the titled device with the electrode construction subject to less deterioration of the electric characteristics agaist thermal stress by ageing by a method wherein the nitride such as Ti etc. with fine crystal construction as the second layer is laminated on the Schottky barrier metal as the first layer coming into contact with the semiconductor layer to form the leader electrode thereon. CONSTITUTION:The Schottky barrier metals such as Ti, W, Mo, Ta etc. say the Ti layer 14 is provided on the surface of the opening for electrode 13 and the peripheral oxide protective film 12 and the Ti nitride film layer 15 is provided on the Ti layer 14 as said Schottky barrier layer metal and the Ti layer 16 is further provided on said layer 15 then the conductive layer 17 comprising say Au, Pt, Ag etc. is provided on said layer 16. The nitride of transition metals such as W, Mo, Cr etc. besides Ti may be substituted for said Ti nitride film 15. The composition of the nitride of said transition metals is so fine that said metals such as Au, etc. can not penetrate the Ti nitride film.

4. 发明专利

JPS5880858A RESISTOR 失效
公开(公告)号：JPS5880858A
公开(公告)日：1983-05-16
申请号：JP17835181
申请日：1981-11-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MORI MASAMICHI , KANAMORI SHIYUUICHI
IPC分类号： H01L27/04 , H01L21/822 , H01L29/41 , H01L29/8605
摘要： PURPOSE:To obtain a resistor which can be continuously corrected at its resistance value by forming a planar shape of a regulating region in a projecting shape with narrow width smaller than that of an essential region. CONSTITUTION:The first electrode 12 is contacted through a contacting hole 14 opened at an insulating film 13 coated on the surfaces of a semiconductor layer 11 and a substrate 10 with the first prescribed region 15 at one end of the layer 11, and the second prescribed region 16 of the other end is contacted directly with the second electrode 18 through a contacting hole 17 opened at the film 13. The first region 15 is formed of a rectangular essential region 15a of plane shape and a projected regulating region 15b, and when a large DC current is flowed through a resistor, the current density becomes high at the end 19 of 15b, a ovid is formed in the first electrode 12 of the end 19, and since no current flows through the void, the length of a current path between the first and second electrodes 12 and 18 becomes longer than the length of the void 20, and the resistance value of the resistor becomes large.

5. 发明专利

JPS5846631A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5846631A
公开(公告)日：1983-03-18
申请号：JP14479481
申请日：1981-09-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI , MORI MASAMICHI
IPC分类号： H01L29/872 , H01L21/28 , H01L21/3213 , H01L21/60 , H01L29/43 , H01L29/47
摘要： PURPOSE:To make it pssible to manufacture a semiconductor device that provides high thermal resistance, and ohmic contact or Schottky junction which can withstand high current density, by a method wherein a third titanium nitride layer is formed between a silicide layer and an aluminum layer of a silicon semiconductor device. CONSTITUTION:Titanium or platinum 3' is deposited by about 200Angstrom using a regular method, and titanium silicide or platinum silicide 3 is formed by heat treatment. The titanium or platinum 3' left on a silicon oxide film 2 is removed by etching, and titanium nitride 4 is formed, for example, by 1,000Angstrom using the reactive spattering method in the mixed gas of argon and nitrogen, then aluminum 5 is formed, for example, by 1.5mum using the vacuum evaporation method. A pattern is formed on the aluminum and only titanium nitride is removed with etching liquid which contains 1g of ethylenediaminetetraacetic acid in 1l of hydrogen peroxide aqueous solution. With this structure, a junction short-circuit and an abnormally high Schottky junction barrier can be restrained, thus the yield is improved and remarkable improvement of reliability is obtained under high current density.

6. 发明专利

JPS57152127A FABRICATION OF ELECTRODE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57152127A
公开(公告)日：1982-09-20
申请号：JP3647281
申请日：1981-03-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI , SUDOU HIROKI
IPC分类号： H01L23/52 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L29/43
摘要： PURPOSE:To achieve fabrication of multilayer electrodes for use in a semiconductor of enhanced stability by a method wherein nitrogen plasma processing work is added after formation of a polycrystalline metal thin film to form a diffusion barrier intermediate layer with less grain boundary diffusion. CONSTITUTION:In a typical section in case of application to a bilayer, for example, a electrode construction, after formation of a film in which Mo or Ti is deposited as a intermediate layer 2 for diffusion barrier use, nitrogen plasma processing is carried out exposing the surface to plasma consisting of a mixture of nitrogen and argon. With this process, a nitride 11 of an intermediate layer metal (Mo or Ti) is selectively formed on the intermediate layer surface and grain boundary. This has a high electronic conductivity and a fine property, so that even if it is formed into grain boudary, any electric trouble does not come up. Therefore, a thermal stability can be improved by suppressing the grain boundary diffusion lowly. After this surface processing work, a metallic thin film 1 is formed and a multilayer electrode can be completed.

7. 发明专利

JPS58158918A MANUFACTURE OF METAL NITRIDE THIN FILM 失效
公开(公告)号：JPS58158918A
公开(公告)日：1983-09-21
申请号：JP4011082
申请日：1982-03-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI
IPC分类号： C23C14/06 , H01L21/28 , H01L21/285
摘要： PURPOSE:To obtain a metal nitride thin film of low specific resistance and small internal stress easily, by a method wherein negative D.C. bias is applied to a substrate and hydrogen is added to nitrogen/argon mixing gas. CONSTITUTION:A chamber 1 is evacuated and hydrogen gas is introduced therewithin through a gas inlet port 8 until attaining a prescribed partial pressure. Nitrogen is introduced until attaining a prescribed partial pressure, and then argon is introduced until attaining total pressure of prescribed value. Discharging is started and a metal nitride thin film is deposited. Prescribed D.C. bias voltage is applied to a substrate 6 from a bias power source 7. In this constitution, a metal nitride thin film having low specific resistance and small internal stress can be obtained easily. If the thin film is used as part of electrode of IC, for example, as a diffusion barrier, parts being execellent in heat-resisting property and reliability can be obtained in high yield.

8. 发明专利

JPS5880872A SEMICONDUTOR DEVICE 失效
公开(公告)号：JPS5880872A
公开(公告)日：1983-05-16
申请号：JP17828781
申请日：1981-11-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAMORI SHIYUUICHI , WADA YOSHIKI , MATSUMOTO TADASHI
IPC分类号： H01L21/28 , H01L21/338 , H01L29/43 , H01L29/80 , H01L29/812
摘要： PURPOSE:To remarkably reduce the thermal unstability of a semicondutor device at a high temperature by sufficiently reducing the thickness of an Au-Ge-Ni alloy layer with the remaining thickness necessary to electrically ohmically contact and isolating through a thick conductor layer and a diffused barrier layer, thereby minimizing the invasion of electrode metal into the semiconductor. CONSTITUTION:When Au is used for a condutor layer 7, a 3-layer structure of titanium (Ti)-nitrided titanium (TiN)/titanium (Ti) or molybdenum (Mo)/nitrided molybdenum (MoN)/molybdenum (Mo) is considered as a diffused barrier layer 6, and when aluminum (Al) is used as the condutor layer, the barrier layer can be formed in a 2-layer structure of TiN/Ti or MoN/Mo. Then, electrodes are formed by adhering by a vacuum deposition method Au-Ge alloy containing approx. 12wt% of Ge and Ni in thicknesses of 450 and 50Angstrom , and are heat treated at 500 deg.C for 30sec. in a hydrogen furnace, thereby forming an ohmic contact layer of Au-Ge-Ni alloy. Subsequently, Ti, TiN, Ti are respectively sequentially formed by a sputtering method in thicknesses of 100, 200 and 500Angstrom , and the conductor layer of the Au is eventually formed by an electrically plating method in approx. 1mum thick.

9. 发明专利

JPS5835919A MANUFACTURE OF METAL-SEMICONDUCTOR JUNCTION ELECTRODE 失效
公开(公告)号：JPS5835919A
公开(公告)日：1983-03-02
申请号：JP13419681
申请日：1981-08-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WADA YOSHIKI , KAWASAKI YASUHIRO , KANAMORI SHIYUUICHI
IPC分类号： H01L21/28 , H01L29/43 , H01L29/47 , H01L29/872
摘要： PURPOSE:To obtain a metal-semiconductor junction electrode having a high reverse direction withstand voltage and the desired Schottky barrier height by a method wherein a thin Ti layer and a thin TiN layer are adhered being laminated on the surface of a compound semiconductor substrate provided with an ohmic electrode on the back, and the heat treatment is performed during formation or after formation of the layers thereof. CONSTITUTION:An Au-Ge alloy layer and an Ni layer are evaporated being laminated on the back of a GaAs wafer 1 to form the ohmic electrode 2, and the Ti layer 3 made thickness thereof as to 100Angstrom is adhered by sputting on the surface. Then the TiN layer 4 obtained by performing reactive sputtering of Ti in N2 plasma is laminated on the Ti layer 3, and the Ti layer 5 having 100Angstrom thickness is adhered thereon again. After then, an Al layer 6 having about 3,000Angstrom thickness is evaporated thereon, and is formed in the prescribed shape according to the photo etching method. Then the heat treatment is performed for 30sec in the H2 atmosphere held at 450 deg.C to obtain the desired junction electrode. At this constitution, the heat treatment in H2 gas may be performed during the process of formation of the layer 3, 4, or may be performed after formation thereof is finished.

10. 发明专利

JPS5666003A THERMISTOR 失效
公开(公告)号：JPS5666003A
公开(公告)日：1981-06-04
申请号：JP14177979
申请日：1979-10-31
申请人： NIPPON TELEGRAPH & TELEPHONE , FUJITSU LTD
发明人： SANO KOUICHI , KANAMORI SHIYUUICHI , MATSUMOTO ITOKU , MAKUUCHI AKIRA
IPC分类号： H01C7/04

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