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1. 发明专利

JPH10199975A MANUFACTURE OF SEMICONDUCTOR DEVICE OF MULTI-LAYERED WIRING STRUCTURE 失效
公开(公告)号：JPH10199975A
公开(公告)日：1998-07-31
申请号：JP35867396
申请日：1996-12-27
申请人： NIPPON STEEL SEMICONDUCTOR CO
发明人： TOGANO YOSHIAKI , KOMATSUZAKI HIROYUKI , KUROSE ATSUSHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device of a multi-layered wiring structure, having a flat interlayer insulating film wherein etching residue of an upper wiring layer is not generated. SOLUTION: A method of manufacturing a semiconductor device of a multi- layered wiring structure consists of the following: a process B wherein a ground insulating film 4 whose thickness is greater than that of a lower wiring layer 2 formed on an insulating film is formed on the lower wiring layer 2, a process C wherein the upper part of the ground insulating film 4 is eliminated by etching, and a sidewall of the lower wiring layer 2 is covered with a residual part of the ground, a process D wherein an interlayer insulating film 5 is formed on the lower wiring layer 2 whose sidewall is covered with the residual part of the ground insulating film, and a process wherein an upper wiring layer 6 is formed on the interlayer insulating film 5.

2. 发明专利

JPH10112456A POLYCIDE ETCHING METHOD 失效
公开(公告)号：JPH10112456A
公开(公告)日：1998-04-28
申请号：JP28131596
申请日：1996-10-03
申请人： NIPPON STEEL SEMICONDUCTOR CO
发明人： KUROSE ATSUSHI , HORIKAWA KOSUKE
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To see that an etching unaccomplished region in stick form does not remain in the case that the etching gas is divided in such a way as to use fluoric gas and bromic gas respectively for two layers at the section high in difference in level between oxide films (the difference in level means that the thickness is 1000Å or over, especially 3000Å or thereabouts) when etching the two layers. SOLUTION: This method is one which covers a semiconductor substrate 1 with a thick oxide film 2 and a thin oxide film 3 in advance and deposits a polysilicon layer 4 on the oxide film 2 and the oxide film 3 and a tungsten silicide layer 5 thereon, and polycide-etching the tungsten silicide layer 5 and the polysilicon layer 4. In this case, using fluoric gas and bromic gas as etching gas, the tungsten silicide layer 5 and the polysilicon layer 4 are removed by etching, and further, using the bromic gas as etching gas, the polysilicon 5 remaining at the side of the oxide film 2 is removed by etching, leaving the oxide film 3.

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