专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH08236483A FORMATION OF ELECTRODE FOR SEMICONDUCTOER DEVICE 失效
公开(公告)号：JPH08236483A
公开(公告)日：1996-09-13
申请号：JP5802595
申请日：1995-02-22
申请人： NIPPON STEEL CORP
发明人： SUZUKI TETSUYA , TERADA TOSHIYUKI , FUJITA YUKIHISA , FUJII SATOSHI
IPC分类号： H01L21/28 , C25D7/12 , H01L21/288
摘要： PURPOSE: To easily obtain an ohmic contact between an electrode film and semiconductor film on a substrate by reductively removing a natural oxide film by applying a first voltage across a platinum electrode and plating electrode while a unit to be plated is dipped in a plating solution in such a state that the patterned part of a semiconductor film on which an electrode is formed is exposed, and then, precipitating gold by applying a second voltage across the electrodes. CONSTITUTION: A unit to be plated is composed of a semiconductor substrate 11, epitaxial layer 12, natural oxide film 13, first insulating film 16 formed in a desired pattern, plating electrode 14, second insulating film 17, etc. When a first voltage, under which the film 13 is reduced, is applied across a platinum electrode and the electrode 14 while the unit is dipped in a plating solution containing gold ions, the film 13 is reduced and the surface of the layer 12 on which a gold electrode is formed is exposed. When a second voltage, under which gold is precipitated on the surface of the layer 12, is applied across the electrodes thereafter, gold is precipitated on the surface of the layer 12 and the ohmic gold electrode 18 is obtained in a desired pattern.

2. 发明专利

JPH07263816A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07263816A
公开(公告)日：1995-10-13
申请号：JP7953094
申请日：1994-03-25
申请人： NIPPON STEEL CORP
发明人： FUJITA YUKIHISA , FUJII SATOSHI , TERADA TOSHIYUKI , SUZUKI TETSUYA
IPC分类号： H01L21/28 , H01L21/363 , H01S5/00 , H01S3/18
摘要： PURPOSE:To make ohmic contact possible between a p-type layer comprising the epitaxial connection of a II-VI compound semiconductor and an electrode by forming a p-type ohmic layer containing a specific quantity of nitrogen and carbon, respectively. CONSTITUTION:An n-type ZnSe buffer layer 2, an n-type ZnSSe clad layer 3, a CdZnSe active layer 4, a p-type ZnSSe clad layer 5 and a high-concentration p-type ZnSe layer 6 are formed in this sequence by an MBE method and formed on a GaAs substrate 1. A p-type ohmic ZnSe layer 7 is formed above a high concentration p-type ZnSSe layer by an MOCVD method, and further an Au electrode layer 8 is formed on the upper layer by evaporation. The p-type ohmic layer 7 is set to contain in nitrogen of 1X10 cm to 1X10 cm and carbon of 1X10 cm to 1X10 cm . Thereby, ohmic contact can be made between the p-type ZnSSe layer 5 and the Au electrode layer.

3. 发明专利

JPH06283424A MOLECULAR BEAM EPITAXIAL GROWTH METHOD AND APPARATUS THEREFOR 失效
公开(公告)号：JPH06283424A
公开(公告)日：1994-10-07
申请号：JP7227493
申请日：1993-03-30
申请人： NIPPON STEEL CORP
发明人： FUJITA YUKIHISA
IPC分类号： C23C14/22 , C23C14/32 , H01L21/203 , H01L21/205
摘要： PURPOSE:To make it easy to add dopant in the epitaxial growth. CONSTITUTION:A radical molecular beam emission cell 30 which supplies a dopant is provided with a hot cathode filament and a grid. Electrons emitted from the hot cathode filament are accelerated by the voltage applied between the hot cathode filament and the grid, and caused to strike the dopant material introduced in the radical molecular beam emission cell 30 to produce a radical molecular beam.

4. 发明专利

JPH05251368A 失效
公开(公告)号：JPH05251368A
公开(公告)日：1993-09-28
申请号：JP8342392
申请日：1992-03-05
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA
IPC分类号： C30B23/00 , C30B25/00 , H01L21/205
摘要： PURPOSE:To facilitate decomposition of source gas and excitation of a doping gas and obtains a high-quality crystal by applying a plurality of high output laser beams with a wavelength which subject the source gas to photolysis toward a position near a substrate surface. CONSTITUTION:Gallium arsenide substrate B is retained upward and skewly for a susceptor 3 and the substrate B is rotated and at the same time is heated. Then, source gas and doping gas (150 deg.C) are supplied. At this time, a high-output laser beam at ultraviolet region is applied from each light source 4, the source gas is decomposed and at the same time laser plasma is generated at a position A, and then the doping gas is excited. By performing feedback control of each light source 4 according to laser plasma intensity, growth rate and the amount of supply of nitrogen radical to the substrate B can be properly controlled, thus reducing crystal growth temperature and preventing generation of point defect.

5. 发明专利

JPH05251367A 失效
公开(公告)号：JPH05251367A
公开(公告)日：1993-09-28
申请号：JP8342292
申请日：1992-03-05
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA
IPC分类号： C30B23/00 , C30B25/00 , H01L21/205
摘要： PURPOSE:To facilitate excitation of a doping gas and promote crystal growth by applying a high output laser beam with a wavelength which does not subject source gas to photolysis and then focusing it and then applying a light with an energy which is higher than a forbidden band of an epitaxial crystal growth compound. CONSTITUTION:Gallium arsenide substrate B is retained upward and skewly for a susceptor 3 and the substrate B is rotated and at the same time is heated. Then, source gas and doping gas are supplied. At this time, a high-output laser beam at infrared region is applied from each light source 4, laser plasma is generated at a position A, and then the doping gas is excited. Since laser beam from each light source 4 is an infrared rays with a wavelength which does not subject the source gas to photolysis, control of crystal growth itself is easy. Both gases are supplied into a reaction chamber 2 and at the same time a high-energy light is applied from a lamp 7 toward the substrate B, thus promoting crystal growth of zinc selenide on the surface of the substrate B.

6. 发明专利

JPH0372628A METHOD AND APPARATUS FOR SEMICONDUCTOR SURFACE PASSIVATION DEVICE 失效
公开(公告)号：JPH0372628A
公开(公告)日：1991-03-27
申请号：JP7447489
申请日：1989-03-27
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA , INAI TORU
IPC分类号： C23C16/18 , C23C16/48 , H01L21/314
摘要： PURPOSE:To easily form a surface passivation film in the case a photosensitive semiconductor thin film is formed by an MOCVD method or an optical pumping vapor growth method, by a method wherein after the semiconductor thin film is grown on a substrate, an organozinc compound and an organosulfur compound are made to accompany carrier gas and are fed in this reaction tube by a prescribed amount and light having a specified wavelength is irradiated in the vicinity of the substrate or on the substrate itself. CONSTITUTION:A CMT single crystal of a prescribed compositional ratio is grown on the surface of a substrate 13. Raw gas for forming a ZnS passivation film is introduced in a reaction tube 8. As the flow rate of dimethyl zinc (Me2Zn) gas and diethyl sulfur (Et2S) gas, which are used as the raw gas, a flow rate of 1 to 500ml/minute is proper as the flow rate of H2 gas, which is sent in an Me2Zn bubbler 18, a flow rate of 1 to 500ml/minute is proper as the flow rate of H2 gas, which is sent in an Et2S bubbler 19, and a flow rate of 0.1 to 20ml/minute is proper as the flow rate of diluent H2 gas. An organozinc compound and an organosulfur compound, which are introduced in the tube 8, are decomposed by irradiation with light having a wavelength of 190 to 300nm.

7. 发明专利

JPH02239187A METHOD AND DEVICE FOR VAPOR GROWTH 失效
公开(公告)号：JPH02239187A
公开(公告)日：1990-09-21
申请号：JP6181489
申请日：1989-03-14
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA , TERADA TOSHIYUKI
IPC分类号： C30B25/14 , C23C16/18 , C23C16/44 , C23C16/455 , C30B29/48
摘要： PURPOSE:To obtain many sheets of thin films having large area in the excellent composition ratio and surface state by holding a mercury reservoir with a shaft vertically stood in a vertical reaction tube, specifying the position for supplying the organic metallic compd. of a raw material and rotating a base plate in the case of growing the thin films of mercury-contg. compd. single crystal. CONSTITUTION:In the case of growing a CdxHg1-xTe single crystal thin film, Me2Cd and Et2Te sent from the bubblers 1, 2 are diluted by H2 and then introduced into the vertical reaction tube 11 through the nozzles 9, 10. Mercury vapor is generated by heating a mercury reservoir 12 which is held with the shaft vertically stood from the lower wall surface of the reaction tube 11 and arranged to the central part in the reaction tube 11. In this case, at least Me2Cd decomposable at low temp. is supplied through the nozzle 9 opened in the part upper than the top-end aperture of the mercury reservoir 12. A base plate 16 controlled at the prescribed temp. is arranged to the part upper than the aperture of the nozzle 9. this base plate 16 is rotated for the center axis of the reaction tube 11 by a rotating shaft 18.

8. 发明专利

JPH02239186A METHOD AND DEVICE FOR VAPOR GROWTH 失效
公开(公告)号：JPH02239186A
公开(公告)日：1990-09-21
申请号：JP6181289
申请日：1989-03-14
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA , TERADA TOSHIYUKI
IPC分类号： C30B25/14 , C23C16/18 , C23C16/44 , C23C16/455 , C30B29/48
摘要： PURPOSE:To obtain many sheets of thin films having large area in the excellent composition ratio and surface state by holding a mercury reservoir with a shaft vertically hung in a vertical reaction tube specifying the position for supplying the organic metallic compd. of a raw material and rotating a base plate in the case of growing the thin films of mercury-contg. compd. single crystal. CONSTITUTION:In the case of growing a CdxHg1-x Te single crystal thin film, Me2Cd and Et2Te sent from the bubblers 1, 2 are diluted by H2 and introduced into the vertical reaction tube 11 through the nozzles 9, 10. Mercury vapor is generated by heating a mercury reservoir 12 which is held with the shaft vertically hung from the upper wall surface of the reaction tube 11 and arranged to the central part in the reaction tube 11. In this case, at least Me2Cd decomposable at low temp. is supplied through the nozzle 9 opened to the part lower than the mercury reservoir 12. A base plate 16 controlled at prescribed temp. is arranged to the part lower than this aperture. This base plate 16 is rotated for the center axis of the reaction tube 11 by a rotating shaft 18.

9. 发明专利

JPH02221197A VAPOR GROWTH METHOD AND DEVICE 失效
公开(公告)号：JPH02221197A
公开(公告)日：1990-09-04
申请号：JP4006889
申请日：1989-02-20
申请人： NIPPON STEEL CORP
发明人： FUJII SATOSHI , FUJITA YUKIHISA , INAI TORU
IPC分类号： C30B25/14 , C23C16/18 , C23C16/30 , C23C16/48 , C30B29/48
摘要： PURPOSE:To accurately control the vapor pressure of Hg and to grow a thin film having an accurate ratio in compsn. with enhanced uniformity by setting an Hg reservoir in a reaction tube in which a thin film of a single crystal of an Hg-contg. compd. is grown on a substrate and generating Hg vapor from the Hg reservoir by irradiation with light. CONSTITUTION:An organometallic compd. is continuously fed into reaction tube with a carrier gas and an Hg reservoir set in the tube is irradiated with visible light or IR to generate Hg vapor. A substrate set in the tube is then heated to a prescribed temp. and the organometallic compd. is thermally decomposed at a position near the substrate to grow a thin film of a single crystal of an Hg-contg. compd. on the substrate.

10. 发明专利

JPH11330093A SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH11330093A
公开(公告)日：1999-11-30
申请号：JP12500298
申请日：1998-05-07
申请人： NIPPON STEEL CORP
发明人： AIGO TAKASHI , FUJITA YUKIHISA
IPC分类号： H01L21/20 , H01L21/338 , H01L29/812 , H01L33/12 , H01L33/30 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To suppress the generation of parasitic capacitances and parasitic resistances and to improve high frequency characteristics by specifying the sheet carrier density, at an interface between a silicon substrate and a compound semiconductor layer. SOLUTION: An AlGaAs buffer layer 12 is grown epitaxially on a silicon substrate 11, and a GaAs activated layer 13 is similarly grown epitaxially thereon. During the growth, the layer 12 is intentionally made into a p-type, thereby forming an interface conductive layer 15 in which p-type carriers are compensated for by silicon atoms diffused from the substrate 11. The sheet carrier density of the layer 15 is set at 6×10 (cm ) or lower. As a result, the generation of electric lines of forces between an electrode for a device formed on the compound semiconductor layer and the layer 15 is suppressed, so that the parasitic capacitances and parasitic resistances can be reduced down to a practically negligible degree, and high frequency characteristics can be improved.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式