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1. 发明专利

JPH03131598A DIAMOND FILM-PRODUCING UNIT AND PRODUCTION THEREOF 失效
公开(公告)号：JPH03131598A
公开(公告)日：1991-06-05
申请号：JP16917290
申请日：1990-06-27
申请人： NIPPON SOKEN
发明人： YAMAMOTO MINORU , NAKAMURA SATOSHI , ITO NOBUE , HATTORI TADASHI
IPC分类号： C30B29/04
摘要： PURPOSE:To produce the subject diamond film of high quality regardless of thickness by using a system capable of detecting factors causing variation of the surface temperature of the diamond film in vapor phase diamond film synthesis by arching and controlling the surface temperature of the diamond film to a prescribed temperature corresponding to the detected factors. CONSTITUTION:A producing unit having the constitution mentioned below is utilized. A vacuum vessel 100 kept to a prescribed degree of vacuum; an anode 10 and a cathode 7 facing each other arranged in the vacuum vessel 100; a power source 17 for arching for application of a prescribed electric power so as to generate arching at a space between the anode 10 and the cathode 7; a gas supply unit for generating gas plasma by flow of at least a plasma source gas 16 (e.g. Ar+H2) into the generated arc and for blowing the above- mentioned gas plasma containing the carbon source gas 19 onto a substrate 2 arranged at the lower stream thereof; a detector 30 for detection of factors causing variation of the surface temperature of a diamond film growing on the substrate 2; controllers (e.g. 35, 34, 32 and 33) for controlling the surface temperature of the diamond film to a prescribed temperature corresponding to the above-mentioned factors detected by the detector 30; are equipped.

2. 发明专利

JPH0284716A SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0284716A
公开(公告)日：1990-03-26
申请号：JP30647787
申请日：1987-12-03
申请人： NIPPON SOKEN
发明人： SAKAKIBARA NOBUYOSHI , KATADA MITSUTAKA , FUJINO SEIJI , HATTORI TADASHI
IPC分类号： H01L21/20 , H01L21/324 , H01L21/336 , H01L27/00 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To improve electric characteristics such as carrier mobility, and increase element quality and integration capability, in a semiconductor element utilizing a polycrystalline silicon layer as an active layer, by a method wherein the polycrystalline silicon layer is formed thicker than a specified thickness on an insulating layer, and the specified thickness deposition part of the poly- crystalline silicon layer is used as an active region. CONSTITUTION:In a semiconductor element using a polycrystalline silicon layer 3 deposited on an insulating layer 2 as an active layer, the thickness of the polycrystalline silicon layer 3 is made equal to or more than 0.5mum, and the deposition part 0.5mum or greater in thickness of the polycrystalline silicon layer is used as an active region. For example, on an oxide film SiO2 2, a polycrystalline silicon layer 3 of 1.5mum thick is formed by a low pressure CVD method at 610 deg.C. The polycrystalline silicon layer 3 is composed of two layers 3a, 3b corresponding with the deposition process. The layer 3a becomes a layer having fine and random orientation, and the layer 3b becomes a layer of columunar structure oriented along an axis almost vertical to the film surface. In this layer 36, N regions 3b-1, 3b-3 turning to a drain and a source, and P type channel region 3b-2 are formed.

3. 发明专利

JPH0243771A MANUFACTURE OF INSULATED GATE TYPE SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH0243771A
公开(公告)日：1990-02-14
申请号：JP19492988
申请日：1988-08-04
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： FUJINO SEIJI , SAKAKIBARA NOBUYOSHI , MURAMOTO HIDETOSHI , HATTORI TADASHI , MUTO KOJI
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:Not only to alleviate the ruggedness of a polycrystalline silicon surface, which is made to serve as an active region, so as to eliminate a gate failure due to a short circuit but also to improve a semiconductor element in electrical properties such as a carrier mobility and the like by a method wherein a polycrystalline silicon film is formed in film as thick as a specified value or more, which is covered with a cap layer and subjected to a heat treatment at a high temperature and whose surface is flattened. CONSTITUTION:In the manufacture of an insulated gate type semiconductor element provided with a polycrystalline silicon layer 3, serving as an active region deposited on an insulating layer 2, deposited on an insulating layer 2, the polycrystalline silicon layer 3 is formed in film as thick as more than 0.5mum. Then, after the surface of the polycrystalline silicon layer 3 is flattened, the vicinity of the flattened surface of the silicon layer 3, which is thicker than 0.5mum, is made to serve as a channel region 3b-2, and a gate electrode 5 is formed on the region 3b-2 through the intermediary of a gate insulating film 4 and concurrently a drain region 3b-1 and a source region 3b-2 are formed inside the polycrystalline silicon layer 3 so as to be connected to the channel region 3b-2.

4. 发明专利

JPH01227929A THERMAL INFRARED SENSOR 失效
公开(公告)号：JPH01227929A
公开(公告)日：1989-09-12
申请号：JP5561288
申请日：1988-03-09
申请人： NIPPON SOKEN
发明人： TANAKA YASUSHI , INOKUCHI KAZUHIRO , ITO NOBUE , HATTORI TADASHI
IPC分类号： G01J1/02 , G01J5/02 , G01J5/34
摘要： PURPOSE:To improve the output sensitivity of the title sensor in an intermediate infrared band by forming the infrared ray absorbing film of the sensor of a precious-metal film provided with numerous projections of precious-metal particles whose diameters and intervals are within prescribed value ranges. CONSTITUTION:This thermal infrared sensor is provided with an infrared detecting body 1 which absorbs the light energy of infrared rays as heat energy and generates an electric output corresponding to the heat energy and an infrared ray absorbing film 4 formed on the light receiving surface side of the detecting body 1. The film 4 is constituted of a precious-metal film provided with numerous projection of precious-metal particles on its surface on the light receiving side, with the diameters of the projections being set to 0.1-5.0mum and intervals between each particle being set to 0.1-1.5mum.

5. 发明专利

JPH01136961A CERAMIC-MATRIX HAVING METALLIC LAYER AND ITS MANUFACTURE 失效
公开(公告)号：JPH01136961A
公开(公告)日：1989-05-30
申请号：JP29582387
申请日：1987-11-24
申请人： TOYOTA CENTRAL RES & DEV , TOYOTA MOTOR CORP , NIPPON SOKEN
发明人： TAGA YASUNORI , YAMADERA HIDEYA , AOKI KEIJI , HATTORI TADASHI
IPC分类号： C23C14/02 , B32B15/04 , C04B41/52 , C04B41/88 , C04B41/89 , C04B41/90 , C23C14/06 , C23C14/16 , C23C14/58
摘要： PURPOSE:To joint an Mo contg. metallic layer to the above matrix with excellent strength in a relatively low temp. at the time of forming the Mo contg. metallic layer on the surface of an alumina contg. ceramic matrix by interposing an oxidic layer consisting of one or more kinds of Ti, Zr and Nb with Al between both. CONSTITUTION:The surface of the ceramic matrix consisting essentially of Al2O3 is ground, cleaned, dried and is thereafter charged to a sputtering apparatus, by which an alloy layer of Mo and at least one kind among Ti, Zr and Nb having 0.1-20mum thickness is formed in the use of one or more kinds of targets. The matrix is taken out from the sputtering apparatus, is heated, e.g., for 1hr at 800 deg.C to form a bonding layer consisting of Al and the oxide of the above-mentioned metals having 0.005-0.5mum thickness between the alumina matrix and the alloy layer and to manufacture the composite body in which the alumina matrix and the metallic layer are tightly jointed.

6. 发明专利

JPH01109230A PRESSURE DETECTOR 失效
公开(公告)号：JPH01109230A
公开(公告)日：1989-04-26
申请号：JP26612187
申请日：1987-10-21
申请人： NIPPON SOKEN
发明人： NISHIDA MINORU , ANDO YOSHIYASU , HATTORI TADASHI , KONISHI YOUICHI
IPC分类号： G01L9/04 , G01L9/00
摘要： PURPOSE:To obtain the detector with high reliability for high pressure by surely fixing a sensing body to a housing in contact. CONSTITUTION:A step part 22 is provided to the outer periphery of the insertion end part of the sensing body and a closed end side is reduced in diameter; and the step part 22 is fitted in a stopper part 11 projecting from the inner periphery of the housing 1 and the outer periphery of the sensing body 2 is fixed to the inner periphery of the housing 1 in contact. Consequently, even if high pressure is applied from a pressure lead-in part, the sensing body 2 never shifts. Further, even if the connection part between the sensing body 2 and the housing is damaged owing to excessive pressure, the sensing body 2 is prevented from coming out, so the sealing performance and safety for pressurized fluid are improved greatly and the high-reliability detector for high pressure is obtained.

7. 发明专利

JPS63236309A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63236309A
公开(公告)日：1988-10-03
申请号：JP7074087
申请日：1987-03-25
申请人： NIPPON SOKEN
发明人： SAKAKIBARA NOBUYOSHI , KATADA MITSUTAKA , FUJINO SEIJI , HATTORI TADASHI
IPC分类号： H01L29/78 , H01L21/02 , H01L21/20 , H01L21/324 , H01L21/336 , H01L21/822 , H01L21/84 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786
摘要： PURPOSE:To improve the electric characteristics of a semiconductor device by depositing an amorphous silicon layer on a polycrystalline silicon layer formed in an insulating layer, thereafter performing an ion implantation and a low-temperature treatment to form a solid growth layer, and making a semiconductor device on the solid growth layer. CONSTITUTION:A sample is placed in a vacuum chamber, and an oxide film 4e on the film surface of a polycrystalline silicon film 4 is removed by sputtering by an inert gas. Thereafter, an amorphous silicon layer 5' is continuously deposited in the same chamber without being contacted with the atmosphere. Subsequently, making the amorphous silicon layer 5' more amorphous is accelerated by an ion implantation. Then, by a long-time heat treatment in a low- temperature range of 600 deg.C-700 deg.C, a solid growth layer 5 is formed. Thereafter, a high-temperature heat treatment is performed to remove the internal defects in the crystal of the solid growth layer 5. The solid growth layer 5 and a polycrystalline silicon film 4 obtained in this way are patterned, and thereafter are separated on an oxide film 2. And, on each island made of the separated polycrystalline silicon, a polycrystalline silicon transistor 3 is formed.

8. 发明专利

JPS63177023A FLOW RATE SENSOR 失效
公开(公告)号：JPS63177023A
公开(公告)日：1988-07-21
申请号：JP813087
申请日：1987-01-19
申请人： NIPPON SOKEN
发明人： OTA MINORU , ONODA MASATOSHI , MIURA KAZUHIKO , HATTORI TADASHI
IPC分类号： G01F1/68 , G01F1/692 , G01F1/696 , G01F1/698 , G01F9/00 , G01F9/02
摘要： PURPOSE:To keep sensitivity and a response speed over a long period of time, by supplying a current to a burning-off resistor layer when suspended particles are adhered to a flow rate detecting resistor layer and a substrate to burn off or separate the suspended particles. CONSTITUTION:A flow rate detecting resistor layer 62 composed of a platinum pattern layer and a burning-off resistor layer 62' for burning off a contaminant such as suspended particles are provided on a substrate 61. The resistor layers 62, 62 are covered with separate passivation films 63, 63'. When the suspended particles are adhered to the substrate 61 on the upstream side thereof, by supplying a current to the burning-off resistor layer 62' to heat the upstream side, for example, to 400-800 deg.C, the adhered suspended particles are burnt off or separated. Since the passivation film 63 is separated from the passivation film 63', even when a crack is generated in the passivation film 63' by thermal shock due to the supply of a current to the burning-off resistor layer 62', the passivation film 63 covering the flow rate detecting resistor layer 62 receives no effect thereof.

9. 发明专利

JPS63121296A THIN FILM LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS63121296A
公开(公告)日：1988-05-25
申请号：JP26834886
申请日：1986-11-11
申请人： NIPPON SOKEN
发明人： FUJINO SEIJI , MIZUKI SHINYA , ARAI MASUMI , HATTORI TADASHI
IPC分类号： H05B33/04 , G09F9/30 , H05B33/12 , H05B33/22

10. 发明专利

JPS6312178A PRESSURE DETECTOR 失效
公开(公告)号：JPS6312178A
公开(公告)日：1988-01-19
申请号：JP15664886
申请日：1986-07-03
申请人： NIPPON SOKEN , TOYOTA MOTOR CORP
发明人： FUJINO SEIJI , NISHIDA MINORU , MIZUNO NAOHITO , HATTORI TADASHI , AOKI KEIJI
IPC分类号： H01L29/84 , G01L9/00 , G01L9/04
摘要： PURPOSE:To make it possible to measure exactly a high pressure at a high temperature, by forming a polycrystalline silicon layer on the opposite surface of a pressure receiving surface of a pressure receiving diaphragm, and doping this layer with impurity to make up a strain gage element of semiconductor. CONSTITUTION:On the upper surface of a pressure receiving diaphragm 1, a polycrystalline Si layer 12 is formed via an intermediate layer 11 composed of SiO2 and the like. The layer 12 is doped with boron by thermal diffusion, and subjected to patterning by a dry etching to make up strain gage elements 12a-12d. The diaphragm 1 is composed of ceramic possessing strength and heat resistance, and deformed in accordance with a pressure at the time of measurement. The strain based on the deformation is detected by the strain gage elements. These strain gage elements 12a-12d are formed, in which the layer 12 is doped with impurity, so that the highly accurate measurement is enabled without destruction of the elements 12a-12d even in a high temperature atmosphere.

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