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1. 发明专利

JPH09125193A HIGH STRENGTH NITRIDED STEEL MEMBER EXCELLENT IN FATIGUE CHARACTERISTIC 失效
公开(公告)号：JPH09125193A
公开(公告)日：1997-05-13
申请号：JP28389895
申请日：1995-10-31
申请人： NIPPON KOKAN KK , NIPPON TECHNO KK , NAGAOKA DENSHI KK
发明人： ISHIKAWA NOBUYUKI , SHIRAGAMI TETSUO , ISHIGURO MORIYUKI , SHIMA YOSHINOBU , KABASAWA HITOSHI , KUWABARA YOSHIHIRO
IPC分类号： C23C8/26 , C22C38/00 , C22C38/22
摘要： PROBLEM TO BE SOLVED: To produce a nitrided steel member obtainable by ordinary nitriding treatment without executing special treatment causing the rise of cost and having excellent fatigue strength. SOLUTION: This nitrided steel member is the one using a steel contg., by weight, 0.2 to 0.6% C, 1.0 to 2.5% Mo and 0.5 to 1.5% Cr as the stock, and in which multiple nitrides of Mo and Cr are precipitated into the surface layer part by nitriding treatment to harden the surface. In the multiple nitrides, as for the size, the width is regulated to

2. 发明专利

JPH046198A CRUCIBLE FOR PRODUCTION OF SILICON SINGLE CRYSTAL AND METHOD FOR MAKING PARTITION IN CRUCIBLE 失效
公开(公告)号：JPH046198A
公开(公告)日：1992-01-10
申请号：JP10957290
申请日：1990-04-25
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU , ARAKI KENJI
IPC分类号： C30B15/10 , C30B15/12 , C30B29/06 , H01L21/208
摘要： PURPOSE:To reduce the concn. of metallic element of impurities in a molten liquid during the growth of single crystal by constituting a crucible of the quartz crucible main body whose inner wall surface is formed of quartz of high purity, and of the quartz partition whose inner and outer wall surfaces are formed of quartz of high purity. CONSTITUTION:The crucible is constituted of the quartz crucible main body 1 and the quartz partition 10. In the quartz crucible main body 1, the inner wall surface of a structural member 2 is covered with the quartz surface layer 3 in which the total content of metallic elements of Fe, Cu, Na, and Li is

3. 发明专利

JPH03164494A METHOD AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH03164494A
公开(公告)日：1991-07-16
申请号：JP22374890
申请日：1990-08-23
申请人： NIPPON KOKAN KK
发明人： KANETO TAKESHI , KAMIO HIROSHI , ARAKI KENJI , SHIMA YOSHINOBU
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208
摘要： PURPOSE:To lower the oxygen concn. level in a longitudinal direction by gently moving a silicon melt in one direction by an much as the quantity necessary for maintaining the silicon melt levels of a raw material supplying section and a single crystal growing section at the same level. CONSTITUTION:A quartz crucible 1 partitioned by a cylindrical partition member 11 having a pipe 12 is set in a graphite crucible 2 supported vertically movably and rotatably on a pedestal 3 and a radiation heat suppressing member 14 constituted by forming metallic sheets 31 into a multilayered structure via spacers 32 is supported to a hot zone heat insulating material 7 enclosing this crucible 2 so as to cover the silicon melt 4. Granular silicon raw materials are supplied from the raw material supplying device 13 and are melted. The melt is gently admitted to the single crystal growing section via the pipe 12 by as much as the quantity necessary for maintaining the silicon melt levels of the raw material supplying section and the single crystal growing section at the same level and the silicon single crystal 5 is pulled up while the quantity of the heat radiation from the melt 4 is arbitrarily controlled by the suppressing material 14.

4. 发明专利

JPH0312387A METHOD AND DEVICE FOR PRODUCING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH0312387A
公开(公告)日：1991-01-21
申请号：JP14471389
申请日：1989-06-07
申请人： NIPPON KOKAN KK
发明人： SUZUKI MAKOTO , ARAKI KENJI , KAMIO HIROSHI , MORI YOSHIO , SHIMA YOSHINOBU , KAZAMA AKIRA , NAKAHAMA YASUMITSU
IPC分类号： C30B15/02 , C30B29/06
摘要： PURPOSE:To stably perform growth of single crystal by coaxially providing a partition wall made of opaque quartz glass which has a fine small hole of one-way pass to a quartz crucible in a CZ method of continuous supply and supplying granular silicon to an external chamber by a specified method. CONSTITUTION:A partition wall 9 made of opaque quartz glass which has a fine small hole 10 so that flow of melt is made unidirectional is provided coaxially in a quartz crucible 1 to the inside thereof. Further a rotor 13 described hereunder is arranged to the lower part of a hopper 12 for storing granular silicon so that the interval between the rotor 13 and the lower discharge part of the hopper 12 is regulated to the maximum particle diameter or above of granular silicon. The rotor 13 continuously has many measures to the outer circumferential part of the rotor having a horizontal rotary shaft. The direction of the openings of many measures is made vertical to the rotary shaft and radial. While granular silicon is supplied into silicon melt of an external chamber B partitioned by the partition 9 of the crucible 1 via the hopper 12, the rotor 13 and a chamber 11, silicon single crystal 5 is pulled up from melt 4 in the internal chamber A.

5. 发明专利

JPH035392A PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH035392A
公开(公告)日：1991-01-11
申请号：JP13644889
申请日：1989-05-30
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU , OMURA MASAKI , OTANI AKIRA , ARAKI KENJI
IPC分类号： C30B15/00 , C30B15/12 , C30B29/06 , H01L21/208
摘要： PURPOSE:To prevent the defects of crystal from being generated by pertitioning the crucible receiving molten Si raw material to inside of single crystal growing part and outside of raw material melting part to devide the Si raw material with the partitioning material consisting of opaque quartz glass. CONSTITUTION:Granular raw material 6 is supplied to the raw material melting part A from a raw material supply unit 5. The partitioning member 8 made of opaque quartz glass is coaxially provided in a quartz crucible 1 set in a graphite crucible 2. Small apertures 9 are provided in this partition member 8 so that the molten raw material 7 in the raw material melting part A flows into the single crystal growing part B through these apertures 9. The molten raw material 7 is grown into a pillar-shaped grown single crystal 4 to be pulled up. Thus, the single crystal free from fine defects is obtained.

6. 发明专利

JPH02172888A CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH02172888A
公开(公告)日：1990-07-04
申请号：JP32868988
申请日：1988-12-26
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU
IPC分类号： C30B15/10 , C30B29/06
摘要： PURPOSE:To eliminate the disturbance of single crystal growth by bubbles from the bottom of the crucible made of air bubble-contg. silica glass to be used in a CZ method by installing a bluebells silica glass plate which does not generate the bubbles near the m. p. of silicon to the bottom of the inside surface of the crucible. CONSTITUTION:The crucible 1 for pulling up the silicon single crystal by the Czochralski method is produced by a method for melting the powder silica in the rotating crucible, etc. The bubbleless silica glass plate 2 which has the diameter smaller than the bore of the crucible 1 and does not generate the bubbles at about the m. p. of the silicon is then installed by welding, etc., to the bottom of the inside surface of this crucible 1 in which the bubbles are unavoidably intruded. The hindrance of the growth of the single crystal by the infiltration of the bubbles generated from the silica glass to the solid-liquid boundary of the single crystal under pulling up is obviated in this way even if the crucible 1 is used over a long period of time.

7. 发明专利

JPH0259494A PRODUCTION OF SILICON SINGLE CRYSTAL AND APPARATUS 失效
公开(公告)号：JPH0259494A
公开(公告)日：1990-02-28
申请号：JP20844688
申请日：1988-08-24
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU , KAMIO HIROSHI , ARAKI KENJI
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208
摘要： PURPOSE:To obtain silicon single crystal wherein both doping material concn. in the pulling-up direction and oxygen concn. are nearly constant by heating a ringlike heating element provided so as to cover the melting part of a raw material and a partition member, and holding melt and the partition member at the specified temp. CONSTITUTION:When a silicon raw material is charged, a heating element 17 which is heated with electric resistance and made of graphite is moved to the upper part of a crucible 1 or the crucible 1 is vertically moved and thereby charging is made easy. At a point of time when the silicon raw material has been melted, this heating element 17 is moved downward or the crucible 1 is moved upward. Both the surface of melt in a raw material melting part B and the upper part of a partition member 11 are held at high temp. by controlling a heater 6 surrounding a crucible 2 made of graphite and the heating element 17. Thereby the silicon raw material 16 can be surely melted in the melting part B. Further generation of coagulation from the partition member 11 is inhibited in a single crystal pulling-up part A and thereby this pulling-up part can be held at the melt temp. free from trouble for growth of silicon single crystal 5.

8. 发明专利

JPH0340990A CRUCIBLE FOR SINGLE CRYSTAL PRODUCTION 失效
公开(公告)号：JPH0340990A
公开(公告)日：1991-02-21
申请号：JP17437789
申请日：1989-07-06
申请人： NIPPON KOKAN KK
发明人： KANETO TAKESHI , FUJIBAYASHI TERUO , SHIMA YOSHINOBU , ARAKI KENJI
IPC分类号： C30B15/10 , C30B29/06 , H01L21/208
摘要： PURPOSE:To improve the thermal circumstances of Si molten liquid in a single crystal growing part, to restrain the generation of bubbles in the growing part, and to stably pulling the single crystal up by specifying the material and the thickness of each part of the quartz crucible of double structure. CONSTITUTION:This crucible is the crucible for growing Si single crystal in which a partition member 31 is provided in the inner part so as to enclose the crystal concentrically and the partition member 31 has small holes through which the molten liquid of the outside is allowed to move into the inside. In this crucible, the thickness of the crucible bottom part 32 of the part enclosed with the member 31, that is the single crystal growing part, is made larger than 1.3 times the thicker member of the outside part of partition, that is a member 30, and the member 31, and

9. 发明专利

JPH02133389A PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH02133389A
公开(公告)日：1990-05-22
申请号：JP28401788
申请日：1988-11-11
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU , KAMIO HIROSHI
IPC分类号： C30B15/22 , C30B15/02 , C30B15/10 , C30B15/12 , C30B15/14 , C30B29/06 , H01L21/208
摘要： PURPOSE:To prevent the molten raw material from generating solidification in the vicinity of partition member when the inside or the crucible receiving molten silicon raw material is divided with the partition member having small openings and the raw material is continuously supplied in the outside and a single crystal is pulled up from the inside by constituting the partition member of foamed silica glass. CONSTITUTION:The partition member 11 which or a part of which consists of foamed silica glass is provided in the crucible 2 receiving molten silicon raw material 4 so as to enclose the silicon single crystal 6 to be pulled up, and the small openings 13 are provided in the partition member 11 so that the molten silicon raw material 4 is allowed to move quietly. The silicon single crystal 5 is pulled up from the inside of the partition member while silicon raw material 18 is continuously supplied to the outside of the partition member 11 from a supplying unit 14. Thus, as the partition member 11 consists of foamed silica glass, the heat radiation from the molten liquid 4 near the partition member 11 is restrained, and the molten liquid 4 is prevented from generating solidification.

10. 发明专利

JPH02133388A PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH02133388A
公开(公告)日：1990-05-22
申请号：JP28401688
申请日：1988-11-11
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU
IPC分类号： C30B15/22 , C30B29/06 , H01L21/208
摘要： PURPOSE:To prevent the molten raw material from generating solidification in the contact part of partition member when the inside of the crucible receiving molten silicon raw material is divided with the partition member having small openings and a single crystal is pulled up from the inside by constituting the partition member of foamed silica glass. CONSTITUTION:The partition member 11 consisting of foamed silica glass is provided in the crucible 2 receiving molten silicon raw material 4 so as to enclose the silicon single crystal 5 to be pulled up, and the small openings 13 are provided in the partition member 11 so that the molten silicon raw material 4 is allowed to move quietly. The silicon single crystal 5 is pulled up from the inside of the partition member 11 by Czochralski method. Thus, as the partition member 11 consists of foamed silica glass, the heat radiation from the molten liquid 4 near the partition member 11 is restrained, and the molten liquid 4 is prevented from generating solidification in the contact part of the partition member 11.

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