专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH10326760A POLISHING DEVICE 失效
公开(公告)号：JPH10326760A
公开(公告)日：1998-12-08
申请号：JP13473997
申请日：1997-05-26
申请人： NIPPON KOKAN KK
发明人： OTANI AKIRA
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce the dispersion of the device characteristic of a polishing device by uniformizing a polishing cloth in the radial direction of a turntable and the film thickness distribution of an interlayer insulating film caused by the polishing cloth. SOLUTION: A polishing device which flattens the upper surface of a dielectric formed on a semiconductor substrate is provided with a turntable 21, the upper surface of which is coated with a polishing cloth 22 attached to the upper surface and spindles 231 and 232 which press-contact the semiconductor substrate with the upper surface of the turntable 21 through a water pad 26, so that the upper surface of the dielectric may come into contact with the polishing cloth 22. The polishing device is also provided with a nozzle 28 which supplies an abrasive to the polishing cloth 22 on the surface of the turntable 21, and a pressurizing jig 27 which is positioned so that the jig 27 may press-contact the polishing cloth 22 with the dielectric substance, in such a way that the contact are between the cloth 22 and the upper surface of the dielectric may become wider on the outer peripheral side than the central side and constantly maintains the visco-elastic deformation of the polishing cloth 22 in the radial direction of the turntable.

2. 发明专利

JPH035392A PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH035392A
公开(公告)日：1991-01-11
申请号：JP13644889
申请日：1989-05-30
申请人： NIPPON KOKAN KK
发明人： SHIMA YOSHINOBU , OMURA MASAKI , OTANI AKIRA , ARAKI KENJI
IPC分类号： C30B15/00 , C30B15/12 , C30B29/06 , H01L21/208
摘要： PURPOSE:To prevent the defects of crystal from being generated by pertitioning the crucible receiving molten Si raw material to inside of single crystal growing part and outside of raw material melting part to devide the Si raw material with the partitioning material consisting of opaque quartz glass. CONSTITUTION:Granular raw material 6 is supplied to the raw material melting part A from a raw material supply unit 5. The partitioning member 8 made of opaque quartz glass is coaxially provided in a quartz crucible 1 set in a graphite crucible 2. Small apertures 9 are provided in this partition member 8 so that the molten raw material 7 in the raw material melting part A flows into the single crystal growing part B through these apertures 9. The molten raw material 7 is grown into a pillar-shaped grown single crystal 4 to be pulled up. Thus, the single crystal free from fine defects is obtained.

3. 发明专利

JPH1133902A POLISHING DEVICE 失效
公开(公告)号：JPH1133902A
公开(公告)日：1999-02-09
申请号：JP19660497
申请日：1997-07-23
申请人： NIPPON KOKAN KK
发明人： OTANI AKIRA
IPC分类号： B24B37/013 , H01L21/304 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To confirm a discrimination of finishing of a polishing process on the basis of a change of torque by providing a pressure measuring means for measuring the torque applied to spindles with the rotation of a surface plate. SOLUTION: A surface plate 21, to which a polyurethane polishing cloth 22 is fitted, is formed of a rigid material such as ceramic, and rotatable spindles 241 , 242 are provided just over an area, which is separated from the center of the surface plate 21 at about R/2, with a space between them. The spindles 241 , 242 are rotated by rotary motors 261 , 262 . Piezoelectric elements 251 , 252 for measuring the torque to be applied from the surface plate 21 through wafers 29,, 29, are arranged in the spindles 241 , 24, The torque to be applied to the spindles 241 , 242 is small at the initial time of the polishing, and the torque is gradually increased with a progress of the polishing. A stage difference of a surface between the wafers 291 , 292 is eliminated by polishing, and when the polishing progresses to the polishing of a flat film, torque change is eliminated. Consequently, this time when the torque change is eliminated is discriminated as the end of the polishing process.

4. 发明专利

JPH1119864A POLISHING DEVICE 失效
公开(公告)号：JPH1119864A
公开(公告)日：1999-01-26
申请号：JP17397097
申请日：1997-06-30
申请人： NIPPON KOKAN KK
发明人： OTANI AKIRA
IPC分类号： B24B53/017 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To reduce dispersion of a device characteristic, by uniformizing a polishing cloth in a radial direction of a surface plate, and uniformizing film thickness distribution of an inter-layer insulating film caused by the above uniformity. SOLUTION: A polishing device flatting an upper surface of a dielectric of a wafer surface comprises a surface plate 21 mounting a polishing cloth 22 in an upper surface, wafer pressurizing mechanism 241 , 242 bringing a wafer into press contact on an upper surface of the surface plate 21 to be rotatable, nozzle 35 supplying an abrasive material to the polishing cloth 22 in a surface of the surface plate 21, diamond dresser 34 making a rotary motion while pressurized by the polishing cloth 22 to prevent jamming thereof, and a radiation thermometer 311 , 312 measuring a temperature in at least two parts of a position of half of a radius of the surface plate 21 and an edge part. Based on temperature distribution in a surface of the surface plate obtained by these thermometer, a function controlling at least a dress time by the diamond dresser is provided.

5. 发明专利

JPH05221774A PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL INGOT AND SUBSTRATE 失效
公开(公告)号：JPH05221774A
公开(公告)日：1993-08-31
申请号：JP2659692
申请日：1992-02-13
申请人： NIPPON KOKAN KK
发明人： ISHIGURO YASUHIDE , OTANI AKIRA , OMURA MASAKI
IPC分类号： C30B15/00 , C30B15/02 , H01L21/208
摘要： PURPOSE:To improve the qualities, i.e., size of BMD, density, distribution and IG effect of a semiconductor substrate worked from a silicon single crystal ingot produced by the Czochralski method in which a granular polysilicon is continuously supplied to the level adequate to the production of an LSI circuit. CONSTITUTION:A silicon single crystal is pulled up in a chamber by the Czochralski method in which a granular polysilicon material is continuously supplied to produce a silicon single crystal ingot. In this case, the silicon single crystal is grown and the silicon crystal ingot is held above the molten silicon in the chamber for >=1hr, or the silicon single crystal produced from the ingot is worked into a semiconductor silicon substrate which is heat-treated at 550 to 750 deg.C for 1 to 5hr.

6. 发明专利

JPH03208879A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH03208879A
公开(公告)日：1991-09-12
申请号：JP298090
申请日：1990-01-10
申请人： NIPPON KOKAN KK
发明人： OMURA MASAKI , OTANI AKIRA
IPC分类号： C30B15/00 , C30B29/06 , H01L21/208
摘要： PURPOSE:To obtain an Si single crystal capable of ensuring uniform oxygen deposition behavior over the full length by successively subjecting an Si single crystal ingot grown under continuous charging with starting material to heating to a high temp., holding at the temp. for a prescribed time and cooling to a prescribed temp. at a prescribed cooling rate. CONSTITUTION:An Si single crystal ingot grown by the Czochralski method under continuous charging with starting material is heated to 1,000-1,350 deg.C, preferably 1,100-1,200 deg.C, held at the heating temp. for 1min-10hr and cooled to 900-400 deg.C at 1-30 deg.C/min cooling rate. The distribution of oxygen deposited in the ingot is made uniform and the yield of Si single crystals as products can be enhanced.

7. 发明专利

JPH02274459A AUTOMATIC SURFACE GRINDING METHOD AND APPARATUS FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH02274459A
公开(公告)日：1990-11-08
申请号：JP9173889
申请日：1989-04-13
申请人： NIPPON KOKAN KK
发明人： OTANI AKIRA , OMURA MASAKI
IPC分类号： B24B7/20 , B24B49/00 , H01L21/304
摘要： PURPOSE:To accomplish grinding excellent in flatness with good accuracy regardless of fluctuation of temperature and change of grinding resistance by measuring the surface form of a semiconductor wafer in the process of machining by a measuring element and correcting the angle of a grindstone rotating shaft according to the measurement data during grinding. CONSTITUTION:The surface form of a semiconductor wafer 3 in the process of grinding is measured by a measuring element 4. The measurement result is fed back to a control system of an automatic surface grinder, and while the angle of a grindstone rotating shaft 10 is adjusted by an adjusting mechanism 6 according to the feedback information, grinding is performed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式