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    • 1. 发明专利
    • PROJECTION OPTICAL DEVICE
    • JPS60101540A
    • 1985-06-05
    • JP20886783
    • 1983-11-07
    • NIPPON KOGAKU KK
    • SUWA KIYOUICHI
    • G03B27/34G03F9/00H01L21/027H01L21/30
    • PURPOSE:To detect accurately the focusing of a projection mask pattern image on a projected body such as a wafer by detecting the focusing on the projected body on the basis of an image signal corresponding to the image formation state of an overlap image between a light image of a mask pattern and a reflected light image projected reversely from the projected body. CONSTITUTION:The mask R with a light-absorbent and light-shielding mark M is lighted up and the reflected light image of the mark M projected reversely from a wafer W and the light image of the mark M formed by illumination light form an overlap image on the photodetection surface of a TV camera 12. In this case, calibration is so performed that the output of a projector 13 and a photodetector 4 which detect in-focus image formation corresponding to the image signal from a camera 12, etc., is 0; when the mask pattern projection image on the wafer is in focus, that is detected accurately with the output of the photodetector 14 which varies according to the upward/downward movement of a stage 11.
    • 3. 发明专利
    • METHOD FOR DETECTING PATTERN AND PROJECTING OPTICAL DEVICE USING SAID METHOD
    • JPS60238836A
    • 1985-11-27
    • JP9405184
    • 1984-05-11
    • NIPPON KOGAKU KK
    • SUWA KIYOUICHI
    • H01L21/30G03F7/20G03F9/00H01L21/027
    • PURPOSE:To enable detection of an exposed pattern without development by irradiating energy rays to the saturating extent to a reticle which is masked and is formed with the pattern to form a latent image to a photosensitive layer and detecting the latent image from the difference in the optical characteristics between the exposed part and the unexposed part. CONSTITUTION:A desired circuit pattern is formed on the reticle R by shielding the light to a region 1 by a light shielding material made of chromium, etc.; in addition, rectangular light shielding parts 2, 3 formed of chromium, etc. on both sides of the region 1 are provided to said reticle on the x axis running the center RC of the region 1 and slits 2a, 3a extending in a Y direction are provided to the center thereof. A wafer (not shown) is disposed through a lens of a reduction magnification not shown to the reticle R and the pattern on the reticle R is irradiated by the energy dose at which the wafer is nearly saturated to form the latent image. The latent image part is detected by detecting the difference in the optical characteristics between the part of the latent image irradiated with the energy and the unirradiated part. The pattern is thus detected without a developing operation. The above-mentioned method and device are suitable for an IC and LSI.
    • 4. 发明专利
    • Alignment optical system of projection type exposure device
    • 投影型曝光装置对准光学系统
    • JPS59149317A
    • 1984-08-27
    • JP2420283
    • 1983-02-16
    • Nippon Kogaku Kk
    • UEHARA MAKOTOANZAI AKIRASUWA KIYOUICHI
    • H01L21/30G02B13/22G02B19/00G02B21/08G02B27/18G03F9/00H01L21/027
    • G03F9/70
    • PURPOSE:To align a reticle and a wafer with a high precision even if the reticle size is changed, by providing a rectangular aperture in a light source means and making the lengthwise direction of the rectangular aperture coincident with the direction in which the reticle-side focus of a reticle-side positive lens group can be moved on the reticle. CONSTITUTION:A rectangular aperture 70a formed with a slit-shaped rectangular diaphragm 70 provided in a light source part is so arranged that its lengthwise direction corresponds to the direction of movement of the focus position of the first positive lens group L10, namely, the radial direction of a reticle R; and when an object lens barrel 10 and a focus barrel 20 in an alignment system are moved in accordance with the change of the reticle size, a rectangular aperture image 70a' of the light source part is moved in the lengthwise direction to an entrance pupil IE on the entrance pupil plane of a projection object lens L50, and an entrance pupil image IE' of the projection object lens L50 is moved in the lengthwise direction of the rectangular aperture 70a on the rectangular aperture 70a on the aperture plane of the light source part. Therefore, the state where an alignment mark Wm on a wafer W is illuminated through the projection object lens L50 is hardly changed.
    • 目的:即使标线尺寸改变,也可以高精度地对准标线片和晶片,通过在光源装置中设置矩形孔并使矩形孔的长度方向与标线片侧的方向一致 标线片侧正透镜组的焦点可以在光罩上移动。 构成:设置在光源部中的形成有狭缝状矩形膜片70的矩形孔70a的长度方向与第一正透镜组L10的聚焦位置的移动方向对应,即径向 标线片R的方向; 并且当对准系统中的物镜镜筒10和聚焦镜筒20根据标线尺寸的变化而移动时,光源部分的矩形孔径图像70a'沿长度方向移动到入射光瞳IE 在投影物镜L50的入射光瞳面上,投影物镜L50的入射光瞳图像IE'沿着光源部的孔径面上的矩形孔70a的矩形孔70a的长度方向移动 。 因此,通过投影物镜L50照射晶片W上的对准标记Wm的状态几乎不变化。
    • 7. 发明专利
    • MASK FOR EXPOSURE AND EXPOSING DEVICE USING SAID MASK
    • JPS60239022A
    • 1985-11-27
    • JP9405284
    • 1984-05-11
    • NIPPON KOGAKU KK
    • SUWA KIYOUICHI
    • H01L21/30G03F1/00G03F1/38G03F1/42G03F7/20G03F9/00H01L21/027
    • PURPOSE:To enable to curtail exposure processing time by a method wherein shield regions of size the same or more with width of mark regions are provided between the pattern region of a mask for exposure and the mark regions on both the sides of the pattern region. CONSTITUTION:A pattern region Pa drawn with the desired circuit pattern is formed to a reticle R. Marks M1, M2 are formed respectively at the positions separated by the equal distance to right and left in the (x) direction from the center RC of the region Pa. The marks M1, M2 are formed respectively inside of mark regions Pm1, Pm2. Non-exposing regions Pc1, Pc2 having width in the (x) direction the same or more with width in the (x) direction of the regions Pm1, Pm2 are formed between the respective regions Pm1, Pm2 and the region Pa. Accordingly, when a chip and the original picture pattern of a mask to be superposed are to be positioned, openings for positioning provided to the mask are separated from the original picture pattern, and shielding of the original picture pattern according to an optical system is not generated. Accordingly, the process can be shifted to exposing motion at once.
    • 8. 发明专利
    • POSITIONING DEVICE
    • JPS60130742A
    • 1985-07-12
    • JP23910083
    • 1983-12-19
    • NIPPON KOGAKU KK
    • TANIMOTO SHIYOUICHIMATSUURA TOSHIOMURAKAMI SHIGEOUEHARA MAKOTOSUWA KIYOUICHI
    • G03B27/53B65G1/00G03F9/00H01L21/027H01L21/30
    • PURPOSE:To attain high-speed, high-precision positioning by detecting unidirectional position deviation of the whole position deviation of a photosensitive substrate through an optical projection system, and also detecting the position in the direction perpendicular to said direction and rotary deviation through an off-axis type optical system. CONSTITUTION:Information from a CPU100 is outputted to a peripheral circuit through an IF101. Further, pieces of information from the peripheral circuit and a device are also read in a CPU100 through the IF101. A stage 7 is moved in two-dimensions by an X-directional driving means 102 and a Y-directional driving means 103. The position of the stage 7 is detected by laser interferometers 10 and 104 as coordinate values. Signals XP and YP of every unit movement of the stage 7 are counted up or down by digital counters in the IF101 and their values are read in the CPU100 to detect two-dimensional coordinate values of the stage 7. Consequently, the positioning is attained faster and with higher precision than by a through-the-lens system, and step alignment is possible by the through-the-lens system right before exposure, so errors due to expansion of a wafer is reduced.
    • 9. 发明专利
    • MASK FOR EXPOSURE
    • JPS6095435A
    • 1985-05-28
    • JP20210483
    • 1983-10-28
    • NIPPON KOGAKU KK
    • SUWA KIYOUICHI
    • G03F1/00G03F1/38G03F7/20H01L21/027
    • PURPOSE:To measure characteristics in the middle of manufacture and to improve the yield by providing marks for detecting the optical characteristics of a projection lens at the circumference of a circuit pattern drawing area. CONSTITUTION:Main scales MX1 and MX2 and subscales SX1 and SX2 for measuring X-axial magnification are provided on both sides of alignment marks 6a and 6b outside of left and right light shield frames 3 in a figure. Namely, the main scales MX1 and MX2 are provided at the outside of the left light shield frame 3 and the subscales SX1 and SX2 are provided at the outside of the right light shield frame 3 so that the main scale MX1 and subscale SX1, and the main scale MX2 and subscale SX2 face each other. Further, main scales MY1 and MY2 for measuring Y-axial magnification and subscales SY1 and SY2 are provided at the outside of upper and lower light shield frames 3; the main scales MY1 and MY2 are arranged at the outside of the upper frame and the subscales SY1 and SY2 are arranged at the outside of the lower frame so that the main scale MY1 and subscale SY1, and main scale MY2 and subscale SY2 face each other.