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    • 3. 发明专利
    • GRINDING METHOD FOR CERAMICS SINTERED MATERIAL
    • JPH09295257A
    • 1997-11-18
    • JP12930596
    • 1996-04-26
    • NIHON CEMENT
    • SASHITA NORIKAZUSUZUKI ATSUSHIMATSUO SUKEYUKITSUKAMOTO KEIZO
    • B24B9/00B24B9/06
    • PROBLEM TO BE SOLVED: To provide the excellent grinding surface, with which existence of fine grains is not recognized in a worked surface without polishing, by grinding the surface of a sintered body, and thereafter, heating this sintered material at the specified temperature for the specified time in the same atmosphere with the time of sintering. SOLUTION: In this method for grinding a ceramics sintered material, after grinding the surface of the sintered material, this sintered material is heated at a temperature lower than the sintering temperature by 200 deg.C to 50 deg.C for 1-3 hours in the same atmosphere with sintering. Fine grains, of which grain growth is not advanced, appear in the surface with the grinding, and become the fine grains to be recognized by a grinding surface, but a part of the fine grains becomes the free surface, and absorbed for elimination by the grown grains, with which the fine grains contact, at the time of heating. As the atmosphere of heating, in case of oxide, heating is desirably performed in the air, and in case of nitride, heating is desirably performed in the nitrogen, in case of carbide, heating is desirably performed in argon. A ceramic sintered material having excellent cut surfaces, in which existence of the fine grains is not recognized in the worked surface, can be thereby obtained.
    • 5. 发明专利
    • DUMMY WAFER
    • JPH0817888A
    • 1996-01-19
    • JP17032594
    • 1994-06-30
    • NIHON CEMENT
    • HAKOJIMA JIYUNICHIROUMINAMIZAWA KAZUSUKEOGURA KATSUHIKOKISHI YUKIOTSUKAMOTO KEIZO
    • H01L21/66H01L21/02
    • PURPOSE:To provide a repeatedly usable dummy wafer which exhibits high strength, cleaning property and chemical resistance and is suitable for various thin film analysis, by making the wafer of a sintered body of polycrystalline aluminum oxide with average strength, bulk density and purity not lower than predetermined levels and average crystal grain size not greater than a predetermined value. CONSTITUTION:A dummy wafer us made of a sintered body of polycrystalline aluminum oxide with average strength not lower than 450MPa, average crystal grain size not greater than 5mum, bulk density not lower than 3980kg/m and purity not lower than 99.9%. For instance, powder of aluminum oxide with average grain size of 0.2mum and purity of 99.99% is mixed and kneaded with a binder and water, and the mixture is pushed out from a cap to form a sheet. The sheet is dried and formed into a thin plate molded body. The molded body is punched out to obtain a wafer material. The binder is removed from the wafer material at 450 deg.C, and the resulting wafer material is fired at 1350 deg.C or HIP-processed, thus producing a sintered body. The sintered body is then laser-processed and ground, and one side thereof is further abraded. Thus, the dummy wafer is produced.