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    • 1. 发明专利
    • SEMICONDUCTOR SPIN POLARIZED ELECTRON SOURCE
    • JPH07320633A
    • 1995-12-08
    • JP11522194
    • 1994-05-27
    • NEC CORP
    • BABA TOSHIOMIZUTA MASASHIOMORI TSUNEHIKOKURIHARA YOSHIMASANAKANISHI TSUTOMU
    • H01J1/34
    • PURPOSE:To provide a semiconductor spin polarized electron source from which a large quantity of electrons having high spin polarized degree can be emitted by forming a p-type conductive strained super lattice structure with no lattice relaxation and composed of reciprocally formed well layers and barrier layers as a spin polarized electron generating region on a substrate. CONSTITUTION:A block layer 4 (p-Al0.35Ga0.65As) with smaller electron affinity than that of a substrate 1 is formed on the substrate 1 (p-GaAs). As a spin polarized electron generating region, strained well layers 8 (p-In0.15Ga0.85As) having larger lattice constants than those of the substrate 1 and thickness about electron wavelength or thinner and barrier layers 6 (p-GaAs) having lower valence electron band energy than that of the strained well layers 8 and thickness thin enough to transmit electrons in conduction band can permeate by tunnel effect are reciprocally formed to compose a p-type conductive short cycle strained super lattice structure with no lattice relaxation. Moreover, a surface layer 7 (p -In0.15Ga0.85As) to absorb the curve of the bands is formed on these layers.