专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH07122130A OXIDE SUPERCONDUCTING WIRE ROD 失效
公开(公告)号：JPH07122130A
公开(公告)日：1995-05-12
申请号：JP28990993
申请日：1993-10-26
申请人： NAT RES INST METALS , ASAHI GLASS CO LTD , HITACHI CABLE
发明人： TOGANO KAZUMASA , KUMAKURA HIROAKI , TOMITA SHIGEAKI , MORIMOTO TAKESHI , NOMURA KATSUMI , KUMA SHOJI
IPC分类号： C22C5/06 , H01B12/06 , H01B13/00
摘要： PURPOSE:To provide an oxide superconducting wire rod having excellent mechanical strength without deteriorating superconductivity by restraining chemical reaction between a superconductor and a sheath material. CONSTITUTION:Tape-shaped constitution is provided by layering tape-shaped silver alloy containing magnesium of 0.001 atom% to 5atom% and nickel of 0.001atom% to 5atom% and a superconductor composed of Bi2Sr2Ca1C2Ox oxide by using silver as a base material. Thereby, chemical reaction between the superconductor and a metallic material is restrained.

2. 发明专利

JPH07122129A OXIDE SUPERCONDUCTING WIRE ROD 失效
公开(公告)号：JPH07122129A
公开(公告)日：1995-05-12
申请号：JP28990893
申请日：1993-10-26
申请人： NAT RES INST METALS , ASAHI GLASS CO LTD , HITACHI CABLE
发明人： TOGANO KAZUMASA , KUMAKURA HIROAKI , TOMITA SHIGEAKI , MORIMOTO TAKESHI , NOMURA KATSUMI , KUMA SHOJI
IPC分类号： C01G1/00 , C01G29/00 , C22C5/06 , H01B12/06 , H01B13/00
摘要： PURPOSE:To restrain chemical reaction between a superconductor and a metallic base material, and obtain excellent mechanical strength without deteriorating superconductivity by forming a tape shape by layering tape-shaped alloy containing Mn of specific atom% to specific atom% and the superconductor composed of Bi2Sr2 Ca1Cu2Ox oxide by using silver as a base material. CONSTITUTION:Samples l and 2 which contains Mn of 0.16 to 0.40 atom% and whose residual part is Ag are melted by a high frequency induction suspended melting furnace, and Ag allay is formed. On the other hand, an organic binder composed of polyvinyl butyral and organic solvent of trichloro ethane and butanol are added to and agitated in temporary baked powder of Bi2Sr2Ca1Cu2Ox, and slurry is formed. This slurry is stuck to and dried on one surface of a polyethylene tape, and an oxide superconductor having, for example, a thickness of 30mum is formed. Next, this oxide superconductor is separated from the tape, and is formed integrally with an Ag alloy tape, and heat treatment is performed by an electric furnace in an oxygen atmosphere, and when a tension test is preformed after cooling, excellent mechanical strength is obtained without deteriorating superconductivity.

3. 发明专利

JPH0887919A OXIDE SUPERCONDUCTING WIRE ROD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0887919A
公开(公告)日：1996-04-02
申请号：JP22311294
申请日：1994-09-19
申请人： NAT RES INST METALS , ASAHI GLASS CO LTD , HITACHI CABLE
发明人： TOGANO KAZUMASA , KUMAKURA HIROAKI , KITAGUCHI HITOSHI , TOMITA SHIGEAKI , YANAGISAWA EIJI , KASE JUNICHIRO , KUMA SHOJI , KATOU KOUKI
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00
摘要： PURPOSE: To provide an oxide superconducting wire rod having a high superconduction characteristic further to provide high mechanical strength and to be capable of resisting against also strong electromagnetic force. CONSTITUTION: An oxide superconductor thick film by a melting solidification method is formed on a base unit of Ag alloy containing 0.02 to 0.5atom% Mg and 0.001 to 0.1atom% element of one kind or more selected from a group composed of Zr, Nb, Sr. This oxide superconducting wire rod is used to obtain a superconductor of Bi-Sr-Ca-Cu-O oriented with the c-axis of crystal vertically to film surface.

4. 发明专利

JPH07122127A OXIDE SUPERCONDUCTING WIRE ROD 失效
公开(公告)号：JPH07122127A
公开(公告)日：1995-05-12
申请号：JP28990793
申请日：1993-10-26
申请人： NAT RES INST METALS , HITACHI CABLE
发明人： TOGANO KAZUMASA , KUMAKURA HIROAKI , NOMURA KATSUMI , KUMA SHOJI
IPC分类号： C22C5/06 , H01B12/04 , H01B13/00
摘要： PURPOSE:To provide an Ag sheath type oxide superconducting wire rod having excellent mechanical strength without deteriorating superconductivity while restraining chemical reaction between a superconductor and a sheath material. CONSTITUTION:A superconductor composed of Bi2Sr2Ca1Cu2Ox oxide and a sheath material which reinforces this superconductor mechanically by surrounding it and is composed of silver alloy containing magnesium of 0.001 atom% to 5 atom% and nickel of 0.001 atom% to 5 atom% by using silver as a base material, are provided. Chemical reaction between the sheath material and the superconductor is restrained.

5. 发明专利

JPH07122126A OXIDE SUPERCONDUCTING WIRE ROD 失效
公开(公告)号：JPH07122126A
公开(公告)日：1995-05-12
申请号：JP28990693
申请日：1993-10-26
申请人： NAT RES INST METALS , HITACHI CABLE
发明人： TOGANO KAZUMASA , KUMAKURA HIROAKI , NOMURA KATSUMI , KUMA SHOJI
IPC分类号： H01B12/04 , H01B13/00
摘要： PURPOSE:To obtain excellent mechanical strength without deteriorating superconductivity by providing a superconductor composed of BiSr2Ca1Cu2Ox and a sheath material which is composed of silver alloy containing Mn of specific atom% to specific atom% and reinforces the superconductor mechanically by surrouding it. CONSTITUTION:The superconducting wire rod is made of a superconductor composed of a Bi2Sr2Ca1Cu2Ox oxide and sheath material enclosing the superconductor for mechanical reinforcement thereof. In this case, a silver alloy containing 0.001-10atom% Mn in Ag is used for the sheath material. The sheath material thus obtained hardly reacts with the Bi2Sr2Ca1Cu2Ox oxide superconductor, thereby much improving the mechanical strength of the wire rod without causing deterioration in superconductivity.

6. 发明专利

JPH07283428A SOLAR CELL 失效
公开(公告)号：JPH07283428A
公开(公告)日：1995-10-27
申请号：JP7726694
申请日：1994-04-15
申请人： HITACHI CABLE
发明人： NAKAZONO RYUICHI , UNNO TSUNEHIRO , KUMA SHOJI , TAKAHASHI TAKESHI
IPC分类号： H01L31/04
摘要： PURPOSE:To obtain a sufficient photoelectric conversion efficiency while p and n layers are made thinner by inserting a thin-film layer with a small refractive index than that of p-type and n-type semiconductor layers into the p-type and n-type semiconductor layers. CONSTITUTION:Light entering p layer is reflected by a thin-film layer 4 in n layer, the reflected light is reflected by a thin-film layer 7 in the p layer, and the reflection is repeated, thus confining light between two thin-film layers 4 and 7. Light can be effectively absorbed into a pn junction region sandwiched by the thin-film layers 4 and 7 and a high absorption coefficient can be obtained even if the p and n layers are made thinner. By setting a distance (d) between the thin-film layers 4 and 7 inserted into the p and n layers to values so that an expression I (n indicates the refractive index of p and n-type semiconductor layer constitution materials, Eg (ev) indicates a band gap energy, and d indicates the distance between the thin-film layers and is expressed by nm) can be met, light can be absorbed effectively by the pn junction region and a sufficient photoelectric conversion efficiency can be obtained while the p and n layers are made thinner.

7. 发明专利

JPH07201745A SEMICONDUCTOR WAFER AND ITS MANUFACTURE 失效
公开(公告)号：JPH07201745A
公开(公告)日：1995-08-04
申请号：JP33698493
申请日：1993-12-28
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , NAKAZONO RYUICHI , UNNO TSUNEHIRO , KUMA SHOJI
IPC分类号： H01L21/205 , H01L21/02
摘要： PURPOSE:To notably improve the purity and crystallizability of GaN epitaxial crystal while manufacturing high concentration p type GaN in as grown state by tilting the deposited surface of (0001) surfaced sapphire substrate. CONSTITUTION:Fine oblique (0001) surfaced sapphire single crystal substrate 4 can be formed by mirror polishing the (0001) surface of tilted by several degrees in (21*1*0) direction or (011*0) direction. At this time, numerous steps 6 exist on the fine oblique (0001) surface 5. Accordingly, the step flow mode deposition of GaN epitaxial crystal 2 using the step end as the cardinal point can be easily attained thereby enabling the crystalline defects to be notably diminished.

8. 发明专利

JPH0677136A METHOD AND DEVICE FOR VAPOR GROWING COMPOUND SEMICONDUCTOR THIN FILM CRYSTAL 失效
公开(公告)号：JPH0677136A
公开(公告)日：1994-03-18
申请号：JP22829192
申请日：1992-08-27
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , NAKAZONO RYUICHI , UNNO TSUNEHIRO , KUMA SHOJI
IPC分类号： H01L21/205
摘要： PURPOSE:To prevent thin film crystal deterioration and gas rectifier member blinding due to powder by supplying carrier gas in the vertical direction to a crystal substrate through the gas rectifier member and supplying material gas in the horizontal direction between the gas rectifier member and the crystal substrate. CONSTITUTION:A crystal substrate 11 is placed on the top plane of a disc- shaped rotating susceptor 10. A horizontal reacting tube 19 is used, a shower nozzle 12 is arranged above the crystal substrate 11 and two liner nozzles 13 and 14 are arranged on the side. The shower nozzle and the liner nozzles 13 and 14 are connected with gas supplying paths 16-18. After hydrogen purge, the rotating susceptor 10 is heated while introducing hydrogen gas and when the temperature of the crystal substrate 11 reaches 400 deg.C, ammonia is introduced into the reacting tube 19 through the bottom side liner nozzle 14. When the temperature of the crystal substrate 11 reaches 1000 deg.C, the disc-shaped rotating susceptor 10 is rotated and trimethyl gallium is introduced into the reacting tube 19 through the top side liner nozzle 13.

9. 发明专利

JPH0448662A MOUNT METHOD OF LIGHT EMITTING DIODE/MICROCHIP, LIGHT EMITTING DIODE/MICROCHIP DEVICE AND LIGHT EMITTING DIODE/ MICROCHIP 失效
公开(公告)号：JPH0448662A
公开(公告)日：1992-02-18
申请号：JP15628590
申请日：1990-06-14
申请人： HITACHI CABLE
发明人： KUMA SHOJI , NAKAZONO RYUICHI , UNNO TSUNEHIRO
IPC分类号： H01L33/30 , H01L33/56 , H01L33/62 , H01L33/64 , H05K1/02 , H05K3/30 , H05K3/34
摘要： PURPOSE:To acquire mount method of a thermally stable light emitting diode/ microchip of good heat dissipation properties by forming a small through hole on a wiring substrate and by injecting a fixed amount of organic substance of good heat conductivity from a rear after soldering mount of a microchip. CONSTITUTION:Six bare chips 17 are mounted on an SiC stem 14 which is provided with two electrode surfaces 15, 15 with a boundary of an insulating part 16 on a surface. After the bare chip 17 is connected in parallel by a wire bonding line 18, it is formed to a rectangular solid by mold casting by transparent epoxy resin. A microchip 1 which is produced by forming electrode terminals 2, 2 for soldering at both edge surface which cross a light emitting surface 3 at right angles is mounted on a wiring substrate 11 which is provided with wirings 5, 5 on a surface and with a through hole 12. After mount by soldering 6, a cap 7 is charged with silicon grease 13 which is injected through the through hole 12 from a wiring substrate rear. As a result, a microchip and a wiring substrate can be closely bonded and thermally stable mount of good heat dissipation properties can be realized.

10. 发明专利

JPH02162743A COMPOUND SEMICONDUCTOR EPITAXIAL WAFER FOR FIELD-EFFECT TRANSISTOR 失效
公开(公告)号：JPH02162743A
公开(公告)日：1990-06-22
申请号：JP31647788
申请日：1988-12-16
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , OTOGI YOUHEI , KUMA SHOJI
IPC分类号： C30B29/42 , C30B31/22 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE:To obtain an epitaxial wafer for MESFET use and for HEMT use having little substrate leakage current by a method wherein a P-type GaAs region layer is formed by ion-implanting an acceptor impurity in the surface of an undoped Si-GaAs substrate and an epitaxial layer of a MESFET (Schottky gate field-effect transistor) or HEMT (high electron mobility field-effect transistor) structure is formed thereon. CONSTITUTION:Mg is ion-implanted on condition that a P-type GaAs region layer 8 is formed on the surface of an undoped Si-GaAs substrate 7. An undoped GaAs region layer 3, an Si-doped N-type GaAs region layer 2 and an Si-doped N GaAs region layer 1 are grown on this substrate 7 by an MOCVD (Metal Organic Vapor Deposition) method. A MESFET of a recess structure is formed using this epitaxial wafer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式