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    • 1. 发明专利
    • Manufacturing method of elastic boundary wave device
    • 弹性边界波装置的制造方法
    • JP2012065036A
    • 2012-03-29
    • JP2010205808
    • 2010-09-14
    • Murata Mfg Co Ltd株式会社村田製作所
    • TANIGUCHI NORIOSAJI MARI
    • H03H3/10H03H9/145
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of an elastic boundary wave device, capable of manufacturing the elastic boundary wave device with high frequency accuracy.SOLUTION: A second medium 12 is formed on a first medium 11 where an IDT electrode 14 is formed, and a sacrificial layer 15 comprising the same material as a third medium 13 is formed on the second medium 12 further. In the state that the sacrificial layer 15 is formed, frequency characteristics of elastic boundary waves excited by the IDT electrode 14 are measured. The measured frequency characteristics and the design value of predetermined frequency characteristics are compared. In a comparison process, in the case that there is a difference between the measured frequency characteristics and the design value of the predetermined frequency characteristics, the sacrificial layer 15 is removed and then the thickness of the second medium 12 is adjusted corresponding to the difference. On the other hand, in the case that the measured frequency characteristics and the design value of the predetermined frequency characteristics are consistent, the thickness of the second medium 12 is not adjusted.
    • 解决的问题:提供一种能够以高频精度制造弹性边界波装置的弹性边界波装置的制造方法。 解决方案:第二介质12形成在形成有IDT电极14的第一介质11上,并且在第二介质12上还形成包括与第三介质13相同的材料的牺牲层15。 在形成牺牲层15的状态下,测量由IDT电极14激发的弹性边界波的频率特性。 比较测量的频率特性和预定频率特性的设计值。 在比较处理中,在测量的频率特性与预定频率特性的设计值之间存在差异的情况下,去除牺牲层15,然后根据该差异来调节第二介质12的厚度。 另一方面,在测定的频率特性和预定频率特性的设计值一致的情况下,不调整第二介质12的厚度。 版权所有(C)2012,JPO&INPIT
    • 2. 发明专利
    • Surface acoustic wave filter device, and branching filter
    • 表面声波滤波器和分支滤波器
    • JP2007189390A
    • 2007-07-26
    • JP2006004611
    • 2006-01-12
    • Murata Mfg Co Ltd株式会社村田製作所
    • TANIGUCHI NORIO
    • H03H9/72H03H9/145H03H9/64
    • H03H9/725H03H9/008H03H9/14588H03H9/6433
    • PROBLEM TO BE SOLVED: To provide a surface acoustic wave filter device which has superior electric power resistance and can be made more compact. SOLUTION: A transversely coupled resonator type surface acoustic wave filter device 1 is constituted by the facts that connecting one-end sides of N (N: an integer not less than 2) first transversely coupled resonator type SAW filters 6 and 7 are connected to an unbalanced signal terminal 3 in parallel, M (M: an integer not less than 1) second transversely coupled resonator type SAW filters 8 are cascaded to the first transversely coupled resonator type SAW filters 6 and 7, and a second transversely coupled resonator type SAW filter 8 is connected to first and second balanced signal terminals 4 and 5, where N>M. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种具有优异的电力阻力并且可以更紧凑的表面声波滤波器装置。 解决方案:横向耦合的谐振器型表面声波滤波器装置1由将第一横向耦合谐振器型SAW滤波器6和7的N(N:不小于2的整数)的一端侧连接的事实构成 连接到不平衡信号端子3并联,M(M:不小于1的整数)第二横向耦合谐振器型SAW滤波器8级联到第一横向耦合的谐振器型SAW滤波器6和7,以及第二横向耦合谐振器 类型SAW滤波器8连接到第一和第二平衡信号端子4,5,其中N> M。 版权所有(C)2007,JPO&INPIT
    • 3. 发明专利
    • Surface acoustic wave demultiplexer
    • 表面声波除颤器
    • JP2006109528A
    • 2006-04-20
    • JP2006006131
    • 2006-01-13
    • Murata Mfg Co Ltd株式会社村田製作所
    • TANIGUCHI NORIOKISHIMOTO TAKANORI
    • H03H9/72H03H9/25
    • PROBLEM TO BE SOLVED: To provide a surface acoustic wave demultiplexer in which first and second surface acoustic wave filter chips are mounted by a flip-chip bonding method in a package member, the isolation between the first and second surface acoustic wave filter chips is improved, and favorable attenuation characteristic is achieved.
      SOLUTION: A first surface acoustic wave filter chip having a low center frequency and a second surface acoustic wave filter chip 4 having a relatively high center frequency are joined to the chip-mounting surface of a package member 8. The surface acoustic wave demultiplexer comprises a structure for canceling magnetic flux that is generated by an electric signal flowing through the first surface acoustic wave filter chip, if the magnetic flux flows in an area where a signal wiring pattern and a ground wiring pattern are provided.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种表面声波分波器,其中第一和第二表面声波滤波器芯片通过倒装芯片接合方法安装在封装构件中,第一和第二表面声波滤波器之间的隔离 芯片得到改善,实现了良好的衰减特性。 解决方案:具有低中心频率的第一表面声波滤波器芯片和具有较高中心频率的第二表面声波滤波器芯片4接合到封装构件8的芯片安装表面。声表面波 解复用器包括如果磁通量在设置有信号布线图案和接地布线图案的区域中流动,则用于消除由流过第一表面声波滤波器芯片的电信号产生的磁通量的结构。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明专利
    • Manufacturing method of acoustic wave device
    • 声波装置的制造方法
    • JP2013214789A
    • 2013-10-17
    • JP2010171814
    • 2010-07-30
    • Murata Mfg Co Ltd株式会社村田製作所
    • SAJI MARITANIGUCHI NORIOKIMURA TETSUYA
    • H03H3/08H01L41/09H01L41/18H01L41/22H03H9/145
    • H03H3/08
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of an acoustic wave device that manufactures an acoustic wave device including an IDT electrode, which is at least partially positioned in a groove formed in a piezoelectric substrate, with good characteristics.SOLUTION: A mask for groove formation is placed on a piezoelectric substrate 10. A groove 10a is formed on the piezoelectric substrate 10 using the mask for the groove formation. The mask for the groove formation is removed. A mask for electrode formation 22 is placed on the piezoelectric substrate 10 from which the mask for the groove formation is removed. A first electrode layer 11a is formed using the mask for the electrode formation 22.
    • 要解决的问题:提供一种声波装置的制造方法,该声波装置制造包括IDT电极的声波装置,所述IDT电极至少部分地位于形成在压电基板中的凹槽中,具有良好的特性。解决方案: 凹槽形成被放置在压电基板10上。使用用于凹槽形成的掩模在压电基板10上形成凹槽10a。 去除凹槽形成的掩模。 用于电极形成的掩模22放置在压电基板10上,去除用于凹槽形成的掩模。 使用电极形成用掩模22形成第一电极层11a。
    • 7. 发明专利
    • Method of manufacturing acoustic wave device
    • 制造声波装置的方法
    • JP2012034180A
    • 2012-02-16
    • JP2010171813
    • 2010-07-30
    • Murata Mfg Co Ltd株式会社村田製作所
    • SAJI MARITANIGUCHI NORIOKIMURA TETSUYA
    • H03H3/08H03H9/145
    • PROBLEM TO BE SOLVED: To provide a method manufacturing of an acoustic wave device which can manufacture the acoustic wave device having a low electrical resistance of an IDT electrode.SOLUTION: A step of arranging a first mask 21 on a piezoelectric substrate 10 is performed. A first conductive layer forming step of forming a first conductive layer 11a on the first mask 21 is performed. After the first conductive layer forming step, a first removing step of removing the first mask 21 is performed. After the first removing step, a step of arranging a second mask 23 on the piezoelectric substrate 10 is performed. A second conductive layer forming step of forming a second conductive layer 11b on the second mask 23 is performed.
    • 解决的问题:提供一种可以制造具有IDT电极的低电阻的声波器件的声波器件的方法制造。 解决方案:执行将第一掩模21布置在压电基板10上的步骤。 执行在第一掩模21上形成第一导电层11a的第一导电层形成步骤。 在第一导电层形成步骤之后,执行去除第一掩模21的第一去除步骤。 在第一去除步骤之后,执行将第二掩模23布置在压电基板10上的步骤。 执行在第二掩模23上形成第二导电层11b的第二导电层形成步骤。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • Surface acoustic wave filter device and duplexer
    • 表面声波滤波器和双工器
    • JP2008118277A
    • 2008-05-22
    • JP2006297827
    • 2006-11-01
    • Murata Mfg Co Ltd株式会社村田製作所
    • MATSUDA ICHIROTAKAMINE YUICHIFUNABASHI KENTAROTANIGUCHI NORIO
    • H03H9/145H03H9/72
    • PROBLEM TO BE SOLVED: To obtain a surface acoustic wave filter device, having a vertical coupling resonator type surface acoustic-wave filter section and being capable of improving the reflection characteristics and transmission characteristics. SOLUTION: In the surface acoustic wave filter device 1, the vertical coupling resonator type first and second surface acoustic-wave filter sections 10 and 20 are cascade-connected on a piezoelectric substrate 2 by first and second signal lines 6 and 7, and the phase of a signal transmitting the first signal line 6 and the phase of the signal transmitting the second signal line 7 differ by 180°. In the surface acoustic-wave filter device 1, end sections on the reverse side to the side, connected to the signal lines 6 and 7 for second and third IDTs 12 and 13 for the surface acoustic-wave filter section 10, are connected by a wiring pattern 16, and the end sections on the side opposite to the side connected to the signal lines 6 and 7 for the second and third IDTs 22 and 23 for the second surface acoustic-wave filter section 20 are connected by the wiring pattern 26. In the filter device 1, the wiring patterns 16 and 26 are not connected at a ground potential but are brought into electrically floating state. COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题:为了获得具有垂直耦合谐振器型表面声波滤波器部分并且能够改善反射特性和传输特性的表面声波滤波器装置。 解决方案:在表面声波滤波器装置1中,垂直耦合谐振器型第一和第二声表面波滤波器部分10和20通过第一和第二信号线6和7级联连接在压电基片2上, 并且发送第一信号线6的信号的相位和发送第二信号线7的信号的相位相差180°。 在表面声波滤波器装置1中,连接到用于表面声波滤波器部分10的第二和第三IDT 12和13的信号线6和7的相反侧的端部通过 第二表面声波滤波器部分20的第二和第三IDT 22和23的与信号线6和7相连接的一侧的相反侧的端部通过布线图形26连接。 在滤波器装置1中,布线图案16,26不是接地电位,而是处于电浮动状态。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Surface acoustic wave branching filter
    • 表面声波分支滤波器
    • JP2006141067A
    • 2006-06-01
    • JP2006006130
    • 2006-01-13
    • Murata Mfg Co Ltd株式会社村田製作所
    • TANIGUCHI NORIOKISHIMOTO TAKANORI
    • H03H9/72H03H9/25
    • PROBLEM TO BE SOLVED: To provide a surface acoustic wave branching filter where which first and second surface acoustic wave filter chips are mounted by a flip-chip bonding method in a package member, the isolation between the first and second surface acoustic wave filter chips is improved, and proper attenuation characteristics are achieved.
      SOLUTION: In the surface acoustic wave branching filter, the first acoustic wave filter chip, having a low center frequency and the second acoustic wave filter chip 4 having a relatively high center frequency are jointed to the chip-mounting surface of the package member 8; a signal via hole electrode and a ground via hole electrode penetrating at least a part of the package member 8 are provided; and the distance between the signal via hole electrode V6 and the ground via hole electrode V7 is the smallest of the distances between via hole electrodes V1 to V9 which are constituted to the package member 8 and connected to different potentials.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种表面声波分波器,其中第一和第二声表面波滤波器芯片通过倒装芯片接合方法安装在封装构件中,第一和第二声表面波之间的隔离 滤波器芯片得到改进,并且实现了适当的衰减特性。 解决方案:在表面声波分波器中,具有低中心频率的第一声波滤波器芯片和具有较高中心频率的第二声波滤波器芯片4接合到封装的芯片安装表面 会员8 提供穿透包装件8的至少一部分的信号通孔电极和接地通孔电极; 信号通孔电极V6和接地通孔电极V7之间的距离是构成封装构件8并连接到不同电位的通孔电极V1至V9之间的距离中的最小值。 版权所有(C)2006,JPO&NCIPI
    • 10. 发明专利
    • Surface acoustic resonator and its filter
    • 表面声学谐振器及其滤波器
    • JP2005260833A
    • 2005-09-22
    • JP2004072880
    • 2004-03-15
    • Murata Mfg Co Ltd株式会社村田製作所
    • KOMURA TOMOHISATANIGUCHI NORIONAKAO TAKESHIKADOTA MICHIO
    • H03H9/145H03H9/64
    • PROBLEM TO BE SOLVED: To provide a surface acoustic filter in which a frequency interval Δf between a resonant frequency and a antiresonant frequency can be reduced to thereby make it possible to enhance steepness of a filter characteristic when the surface acoustic filter is employed as a resonator in a ladder type filter or the like even when employing an electrode made of a metal material heavier than Al in order to enhance a reflective coefficient.
      SOLUTION: There is provided the surface acoustic resonator 1. In the surface acoustic resonator 1, on a piezoelectric substrate 2, formed is an IDT electrode 3 and reflectors 4, 5 that are made of a metal material heavier than Al. Further, on the piezoelectric substrate 2, there are provided first and second capacitive elements 6, 7 which are connected electrically to the IDT electrode 3 and besides are parallel-connected to each other. The first and second capacitive elements 6, 7 comprise comb-shaped electrodes with a plurality of electrode fingers inserted into one another.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种表面声学滤波器,其中可以减小谐振频率和反谐振频率之间的频率间隔Δf,从而使得当使用表面声学滤波器时可以提高滤波器特性的陡度 作为梯形滤波器等中的谐振器,即使使用由比Al重的金属材料制成的电极以提高反射系数。 提供了表面声谐振器1.在表面声谐振器1中,在压电基板2上形成有IDT电极3和由比Al重的金属材料制成的反射器4,5。 此外,在压电基板2上,设置有与IDT电极3电连接的第一和第二电容元件6,7,并且彼此并联。 第一和第二电容元件6,7包括具有彼此插入的多个电极指的梳状电极。 版权所有(C)2005,JPO&NCIPI