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1. 发明专利

JP2003063893A ZnO/SAPPHIRE SUBSTRATE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： ZnO / SAPPHIRE基板及其制造方法
公开(公告)号：JP2003063893A
公开(公告)日：2003-03-05
申请号：JP2002128757
申请日：2002-04-30
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： KOIKE JUN , IEGI EIJI
IPC分类号： C30B29/16 , C23C14/08 , C30B23/02 , H03H9/02 , H03H9/25
CPC分类号： H03H9/02574 , C30B23/02 , C30B29/16 , Y10S117/902
摘要： PROBLEM TO BE SOLVED: To provide ZnO/sapphire substrate, having an excellent crystallinity and is free from cracks (1, 1, bar-2, 0), and having a ZnO epitaxial film which is epitaxially grown on the R surface (0, 1, bar-1, 2) of sapphire.
SOLUTION: The ZnO/sapphire substrate forms the film of zinc oxide epitaxially on the R surface of sapphire, having a crystalline surface (0, 1, bar-1, 2) parallel with the surface of the substrate, in a way that the crystalline surface (1, 1, bar-2, 0) of (ZnO) is arranged in parallel with the crystalline surface (0, 1, bar-1, 2). The spacing d of the surface (1, 1, bar-2, 0) of ZnO is in the range of 1.623 Å≤d≤1.627 Å.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供具有优异结晶度并且没有裂纹（1，bar-2,0）的ZnO /蓝宝石衬底，并且具有在R表面（0，...）上外延生长的ZnO外延膜， 1，bar-1,2）蓝宝石。解决方案：ZnO /蓝宝石衬底在蓝宝石的R表面上外延形成氧化锌膜，其具有与衬底表面平行的结晶表面（0,1,1，bar-1,2），其结晶（ZnO）的表面（1,1，bar-2,0）与晶体表面（0,1，bar-1,2）平行排列。 ZnO的表面（1,1，bar-2,0）的间距d在1.623Å的范围内，<= d <= 1.627。

2. 发明专利

JP2003347898A Surface acoustic wave resonator filter for portable telephone set 审中-公开
标题翻译：用于便携式电话机的表面声波谐波滤波器
公开(公告)号：JP2003347898A
公开(公告)日：2003-12-05
申请号：JP2003148182
申请日：2003-05-26
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： IEGI EIJI
IPC分类号： H03H9/72 , H03H9/64 , H04B1/50
摘要： PROBLEM TO BE SOLVED: To prevent deterioration in insertion loss as much as possible, for example, in constituting a shared transmitter/receiver by connecting a plurality of surface acoustic wave (SAW) filters. SOLUTION: In the shared transmitter/receiver, in which a receiver (Rx) side SAW filter 1 and a transmitter (Tx) side SAW filter 2 are connected in parallel, a capacitor (reactance element) of 10 pF (impedance of about 42 Ωat Rx frequency) is connected serially between an antenna terminal 3 and the SAW filter 2. Further, in this transmitter/receiver, an inductance element 6 of 27 nH is connected in series with the terminal 3 for impedance matching. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了尽可能防止插入损耗的劣化，例如，通过连接多个声表面波（SAW）滤波器来构成共享的发送器/接收器。解决方案：在共享发射机/接收机中，其中接收机（Rx）侧SAW滤波器1和发射机（Tx）侧SAW滤波器2并联连接，10pF的电容器（电抗元件）约42Ω的Rx频率）在天线端子3和SAW滤波器2之间串联连接。此外，在该发送器/接收器中，27nH的电感元件6与端子3串联连接用于阻抗匹配。版权所有（C）2004，JPO

3. 发明专利

JP2003046372A Surface acoustic wave device 有权
标题翻译：表面声波设备
公开(公告)号：JP2003046372A
公开(公告)日：2003-02-14
申请号：JP2001041241
申请日：2001-02-19
申请人： Murata Mfg Co Ltd , 株式会社村田製作所
发明人： IEGI EIJI
IPC分类号： H03H9/72 , H04B1/3822 , H04B1/52
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave device that can prevent deterioration in insertion loss to the utmost in configuring e.g. a transmitter-receiver through connection of a plurality of surface acoustic wave (SAW) filters. SOLUTION: In the transmitter-receiver where a receiver (Rx) side SAW filter 1 and a transmitter (Tx) side SAW filter 2 are connected in parallel, a capacitor (reactive element) 5 with 10 pF (an impedance of about 42 ohms at a frequency of the receiver Rx) is connected in series between an antenna terminal 3 and the Tx side SAW filter 2. Further, in the transmitter-receiver, an inductive element 6 with 27 nH is connected in parallel with the antenna terminal 3 for impedance matching.
摘要翻译：要解决的问题：提供一种表面声波装置，其能够最大限度地防止插入损耗的劣化。通过连接多个表面声波（SAW）滤波器的发射机 - 接收机。解决方案：在接收器（Rx）侧SAW滤波器1和发射机（Tx）侧SAW滤波器2并联连接的发射机 - 接收机中，具有10pF（约42欧姆的阻抗）的电容器（无功元件）5 接收器Rx的频率）串联连接在天线端子3和Tx侧SAW滤波器2之间。此外，在发送器 - 接收器中，具有27nH的电感元件6与天线端子3并联连接用于阻抗匹配。

4. 发明专利

JPS59135917A Surface acoustic wave resonator 失效
公开(公告)号：JPS59135917A
公开(公告)日：1984-08-04
申请号：JP1084683
申请日：1983-01-26
申请人： Murata Mfg Co Ltd
发明人： IEGI EIJI
IPC分类号： H03H3/08 , H03H9/25
CPC分类号： H03H9/25
摘要： PURPOSE:To miniaturize the surface acoustic wave resonator by forming a transducer comprising interdigital electrodes to a surface acoustic wave substrate having a small surface acoustic wave electromechanical coupling coefficient so as to set the interdigital electrodes in a prescribed range and to obtain a high Q with a few number of pairs. CONSTITUTION:On a crystal substrate 10 of 38 deg. rotation Y-cut X propagation, 300 pairs of normal or interdigital electrodes 11 having a pitch of nearly 25mum are formed. The electrodes are made of Al and the film thickness is taken as 1.5mum (nearly 3% of wavelength lambda0). The dimension of the interdigital electrodes 11 of the surface acoustic wave resonator is set as W/W+G=0.6-0.9, where W is the width of electrode finger of the interdigital electrodes, G is a pitch of adjacent electrode fngers of the interdigital electrodes and W+G is wavelength/2. The surface wave electromechanical coupling coefficient KSAW of the crystal substrate 10 is taken as

5. 发明专利

JPS5923613A Piezoelectric resonator 失效
标题翻译：压电谐振器
公开(公告)号：JPS5923613A
公开(公告)日：1984-02-07
申请号：JP13334882
申请日：1982-07-29
申请人： Murata Mfg Co Ltd
发明人： SUEYOSHI MASAAKI , YAMAGAMI ATSUSHI , IEGI EIJI
IPC分类号： H03H9/17 , H03H9/24
CPC分类号： H03H9/174
摘要： PURPOSE:To reduce breakdowns of diaphragms and to lead out lead lines easily by providing a dielectric thin film over a substrate where a piezoelectric thin film and electrodes are formed and then performing an anisotropic etching treatment. CONSTITUTION:The lower electrode 23, piezoelectric thin film 24, and the upper electrode 25 are formed successively on one surface 20a of the substrate including a silicon wafer 20. Then, the dielectric thin film 26 which is not corroded by an anisotropic etchant is formed covering the piezoelectric thin film 24 and electrodes 23 and 25. Then, the other surface of the wafer 20 is treated by anisotropic etching to form a recessed part 27, i.e. diaphragm. Then, openings 28 and 29 which pierce the electrodes 23 and 25 are formed in the dielectric thin film 26. Thus, aftertreatments following the diaphragm formation are reduced to reduce the breakdown of the diaphragm. Further, the openings 28 and 19 make it easy to lead out lead wires.
摘要翻译：目的：通过在形成压电薄膜和电极的基板上提供电介质薄膜，然后进行各向异性蚀刻处理，减少膜片的破坏并引出引线。构成：在包括硅晶片20的基板的一个表面20a上依次形成下电极23，压电薄膜24和上电极25.然后，形成不被各向异性蚀刻剂腐蚀的电介质薄膜26 覆盖压电薄膜24和电极23和25.然后，通过各向异性蚀刻来处理晶片20的另一个表面以形成凹部27，即膜片。然后，在电介质薄膜26中形成刺穿电极23和25的开口28和29.因此，减小膜片形成之后的后处理以减少隔膜的破坏。此外，开口28和19使得容易引出引线。

6. 发明专利

JPS59202722A Composite piezoelectric resonator 失效
标题翻译：复合压电谐振器
公开(公告)号：JPS59202722A
公开(公告)日：1984-11-16
申请号：JP7663583
申请日：1983-04-30
申请人： Murata Mfg Co Ltd
发明人： SUEYOSHI MASAAKI , IEGI EIJI
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02149
摘要： PURPOSE:To offer a composite piezoelectric resonator which is capable of suppressing the capacity coupling between upper and lower electrodes as much as possible, and also can be utilized with high density by constituting said resonator so that a high-density diffusion layer is formed on only a necessary part by selected diffusion. CONSTITUTION:A high-density diffusion layer 11 is formed on only a part which becomes a vibration part of a silicon substrate 10, an SiO2 film 12 is formed on one surface 10a of the silicon substrate 10 on which this high-density diffusion layer 11 is formed, a lower electrode 13, a piezoelectric thin film 14 of ZnO, etc., and an upper electrode 15 are formed on this SiO2 layer, and also an SiO2 film 16 is formed on them. A recessed part 17 is formed on the other surface of the silicon substrate 10, an SiO2 film 18 is formed on the other surface except the recessed part 17, and a film 19 by SiO2 or Al, etc. is formed on this SiO2 film 18 and in the recessed part 17. Also, 20 is TR, IC, LSI, etc. formed in the silicon substrate 10, and constituted of P-N junction, etc. An operation of such a composite piezoelectric resonator is the same as that of conventional ones.
摘要翻译：目的：提供一种能够尽可能地抑制上下电极之间的电容耦合的复合压电谐振器，并且也可以通过构成所述谐振器而以高密度利用，以便仅形成高密度扩散层通过选择扩散的必要部分。构成：仅在成为硅衬底10的振动部分的部分上形成高密度扩散层11，在硅衬底10的一个表面10a上形成SiO 2膜12，在该表面上形成有高密度扩散层11 形成有下部电极13，ZnO等的压电薄膜14，在该SiO 2层上形成上部电极15，在其上形成SiO 2膜16。在硅基板10的另一个表面上形成有凹部17，在除了凹部17之外的另一个表面上形成SiO 2膜18，在该SiO 2膜18上形成由SiO 2或Al等构成的膜19 并且在凹部17中。另外，20是形成在硅衬底10中的由PN结等构成的TR，IC，LSI等。这种复合压电谐振器的操作与常规的相同。

7. 发明专利

JPS59148474A Rf modulator 失效
标题翻译： RF调制器
公开(公告)号：JPS59148474A
公开(公告)日：1984-08-25
申请号：JP2353683
申请日：1983-02-14
申请人： Murata Mfg Co Ltd
发明人： IEGI EIJI
IPC分类号： H03H3/08 , H03H9/64 , H04N5/40
CPC分类号： H04N5/40
摘要： PURPOSE:To suppress lots of spurious radiation other than an image signal by constituting a sound output filter of an RF module by a surface wave filter having a double peak characteristic so as to attain no adjustment and miniaturization. CONSTITUTION:A carrier from a carrier oscillator 3 is modulated at an AM modulator 4 by a video signal inputted from a video signal input terminal 1 to form a video RF output signal. On the other hand, a sound signal inputted from a sound signal input terminal 2 is converted into an FM modulating wave in sound carrier frequency 4.5MHz at an FM modulator 5, and a sound RF output signal is obtained by AM-modulating a carrier from the carrier oscillator 3 at an AM modulator 6 for the FM-modulatted signal. The spurious radiation produced in obtaining the sound RF output signal from the FM-modulated sound signal and the carrier is eliminated by a surface acoustic wave filter 9.
摘要翻译：目的：通过由具有双峰特性的表面波滤波器构成RF模块的声音输出滤波器来抑制图像信号以外的大量杂散辐射，从而不进行调整和小型化。构成：载波振荡器3的载波通过从视频信号输入端子1输入的视频信号在AM调制器4被调制以形成视频RF输出信号。另一方面，从声音信号输入端子2输入的声音信号在FM调制器5中被转换为4.5MHz的载波频率的FM调制波，并且通过AM调制载波来获得声音RF输出信号载波振荡器3在AM调制器6处用于FM调制信号。通过表面声波滤波器9消除从FM调制声音信号和载波获得声音RF输出信号产生的杂散辐射。

8. 发明专利

JPS5923612A Manufacture of piezoelectric resonator 失效
标题翻译：压电谐振器的制造
公开(公告)号：JPS5923612A
公开(公告)日：1984-02-07
申请号：JP13334982
申请日：1982-07-29
申请人： Murata Mfg Co Ltd
发明人： SUEYOSHI MASAAKI , YAMAGAMI ATSUSHI , IEGI EIJI
IPC分类号： H03H3/02
CPC分类号： H03H3/02
摘要： PURPOSE:To reduce breakdowns of diaphragms and to improve the yield by providing a dielectric thin film over a substrate where a piezoelectric thin film and electrodes are formed, and then carrying out an anisotropic etching treatment. CONSTITUTION:The lower electrode 23, piezoelectric thin film 24, and upper electrode 25 are formed successively on one surface 20a of the substrate including a silicon wafer 20. Then, the dielectric thin film 26 which is not corroded by an anisotropic etchant is formed covering the piezoelectric thin film 24 and electrodes 23 and 25. The other surface 20b of the wafer 20 is etched on anisotropic basis after the formation of the dielectric thin film to form a recessed part 27. Thus, the diaphragm is formed, so aftertreatments following the diaphragm formation are reduced. Consequently, breakdowns of the diaphragms are reduced to improve the yield.
摘要翻译：目的：通过在形成压电薄膜和电极的基板上提供介电薄膜，然后进行各向异性蚀刻处理，减少膜片的破坏并提高产量。构成：在包括硅晶片20的基板的一个表面20a上依次形成下电极23，压电薄膜24和上电极25.然后，形成未被各向异性蚀刻剂腐蚀的电介质薄膜26，压电薄膜24和电极23和25.在形成电介质薄膜之后，以各向异性的方式对晶片20的另一表面20b进行蚀刻以形成凹部27.因此，形成隔膜，因此在后膜片形成减少。因此，减小了隔膜的故障以提高产量。

9. 发明专利

JPS5733818A Elastic surface wave element 失效
标题翻译：弹性表面波元件
公开(公告)号：JPS5733818A
公开(公告)日：1982-02-24
申请号：JP10947280
申请日：1980-08-08
申请人： Murata Mfg Co Ltd
发明人： KATOU SUEHIRO , IEGI EIJI
IPC分类号： H03H9/25 , H03H3/08 , H03H9/05
CPC分类号： H03H9/059
摘要： PURPOSE:To hold a function of a damping material without deteriorating a sealing function, by adding a packing material such as Al2O3, etc. to resin as a sealing material for an elastic surface wave substrate and a cover body, and using it. CONSTITUTION:An elastic surface wave substrate A and a cover plate B are heated and welded by placing a sealing material 4 consisting of resin in the circumference of the elastic surface wave substrate A. A drawing wire is provided in advance on the cover plate B, and is connected by melting a solder part 5 at the time of melt- sticking. To resin is added in advance a packing material such as Al2O3, talc, etc. The
摘要翻译：目的：为了保持阻尼材料的功能而不会降低密封功能，通过将诸如Al 2 O 3等的填充材料添加到树脂中作为弹性表面波基板和盖体的密封材料并使用它。构成：通过在弹性面波基板A的周围放置由树脂构成的密封材料4，将弹性表面波基板A和盖板B加热焊接。在盖板B上预先设置有拉丝，并且在熔融粘附时通过熔化焊料部分5而连接。预先加入树脂，例如Al 2 O 3，滑石等包装材料。对树脂的包装材料<50重量％是期望的，并且作为紧密密封材料的特性而不降低弹性力的必要条件这是树脂的特殊功能。

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