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1. 发明专利

JPS5923612A Manufacture of piezoelectric resonator 失效
标题翻译：压电谐振器的制造
公开(公告)号：JPS5923612A
公开(公告)日：1984-02-07
申请号：JP13334982
申请日：1982-07-29
申请人： Murata Mfg Co Ltd
发明人： SUEYOSHI MASAAKI , YAMAGAMI ATSUSHI , IEGI EIJI
IPC分类号： H03H3/02
CPC分类号： H03H3/02
摘要： PURPOSE:To reduce breakdowns of diaphragms and to improve the yield by providing a dielectric thin film over a substrate where a piezoelectric thin film and electrodes are formed, and then carrying out an anisotropic etching treatment. CONSTITUTION:The lower electrode 23, piezoelectric thin film 24, and upper electrode 25 are formed successively on one surface 20a of the substrate including a silicon wafer 20. Then, the dielectric thin film 26 which is not corroded by an anisotropic etchant is formed covering the piezoelectric thin film 24 and electrodes 23 and 25. The other surface 20b of the wafer 20 is etched on anisotropic basis after the formation of the dielectric thin film to form a recessed part 27. Thus, the diaphragm is formed, so aftertreatments following the diaphragm formation are reduced. Consequently, breakdowns of the diaphragms are reduced to improve the yield.
摘要翻译：目的：通过在形成压电薄膜和电极的基板上提供介电薄膜，然后进行各向异性蚀刻处理，减少膜片的破坏并提高产量。构成：在包括硅晶片20的基板的一个表面20a上依次形成下电极23，压电薄膜24和上电极25.然后，形成未被各向异性蚀刻剂腐蚀的电介质薄膜26，压电薄膜24和电极23和25.在形成电介质薄膜之后，以各向异性的方式对晶片20的另一表面20b进行蚀刻以形成凹部27.因此，形成隔膜，因此在后膜片形成减少。因此，减小了隔膜的故障以提高产量。

2. 发明专利

JPS5923613A Piezoelectric resonator 失效
标题翻译：压电谐振器
公开(公告)号：JPS5923613A
公开(公告)日：1984-02-07
申请号：JP13334882
申请日：1982-07-29
申请人： Murata Mfg Co Ltd
发明人： SUEYOSHI MASAAKI , YAMAGAMI ATSUSHI , IEGI EIJI
IPC分类号： H03H9/17 , H03H9/24
CPC分类号： H03H9/174
摘要： PURPOSE:To reduce breakdowns of diaphragms and to lead out lead lines easily by providing a dielectric thin film over a substrate where a piezoelectric thin film and electrodes are formed and then performing an anisotropic etching treatment. CONSTITUTION:The lower electrode 23, piezoelectric thin film 24, and the upper electrode 25 are formed successively on one surface 20a of the substrate including a silicon wafer 20. Then, the dielectric thin film 26 which is not corroded by an anisotropic etchant is formed covering the piezoelectric thin film 24 and electrodes 23 and 25. Then, the other surface of the wafer 20 is treated by anisotropic etching to form a recessed part 27, i.e. diaphragm. Then, openings 28 and 29 which pierce the electrodes 23 and 25 are formed in the dielectric thin film 26. Thus, aftertreatments following the diaphragm formation are reduced to reduce the breakdown of the diaphragm. Further, the openings 28 and 19 make it easy to lead out lead wires.
摘要翻译：目的：通过在形成压电薄膜和电极的基板上提供电介质薄膜，然后进行各向异性蚀刻处理，减少膜片的破坏并引出引线。构成：在包括硅晶片20的基板的一个表面20a上依次形成下电极23，压电薄膜24和上电极25.然后，形成不被各向异性蚀刻剂腐蚀的电介质薄膜26 覆盖压电薄膜24和电极23和25.然后，通过各向异性蚀刻来处理晶片20的另一个表面以形成凹部27，即膜片。然后，在电介质薄膜26中形成刺穿电极23和25的开口28和29.因此，减小膜片形成之后的后处理以减少隔膜的破坏。此外，开口28和19使得容易引出引线。

3. 发明专利

JPS5748820A Surface acoustic wave element 失效
标题翻译：表面声波元件
公开(公告)号：JPS5748820A
公开(公告)日：1982-03-20
申请号：JP12382780
申请日：1980-09-05
申请人： Murata Mfg Co Ltd
发明人： MASUO TASUKU , ANDOU KENJI , YAMAGAMI ATSUSHI
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/25
CPC分类号： H03H9/02574
摘要： PURPOSE:to increase the conversion efficiency of a surfce acoustic waves SAW, by forming an electrode of face-centered cubic structure on a piezoelectric film of wurtzite structure with C axis orientation on a substrate, and forming the piezoelectric film of wurtzite structure on it through C axis orientation. CONSTITUTION:A piezoelectric thin film 11 of wurtzite structure such as ZnO, AlN is constituted on a glass substrate 10 with sputtering, and the C axis is oriented almost toward vertical direction as the plane of the substrate 10. The metallic film is formed by vacuum depostion of centered-face cubic structure such as Al and Au on the thin film 11, and the surface acoustic wave electrode is constituted by photoetching this metallic film into a prescribed shape. The piezoelectric material of wurtzite structure such as AlN and ZnO is sputtered on the thin film 11 and the electrode 12 to form a piezoelectric thin film 13. Even on the plane of ZnO, and on the plane of Al, the C axis of the thin film 13 is made easy to be oriented toward vertical direction to the substrate 10, the difference of the slope of orientation of the thin film 13 on the thin film 11 and the electrode 12 is decreased, allowing to increase the conversion efficiency of the surface acoustic waves.
摘要翻译：目的：通过在衬底上形成具有C轴取向的纤锌矿结构的压电薄膜上形成面心立方结构的电极，提高表面声波SAW的转换效率，并通过其形成纤锌矿结构的压电膜 C轴方向。构成：通过溅射在玻璃基板10上构成ZnO，AlN等纤维素结构的压电薄膜11，并且C轴几乎朝向垂直方向取向作为基板10的平面。金属膜通过真空形成薄膜11上的中心面立方结构如Al和Au的沉积，并且表面声波电极通过将该金属膜光刻成规定的形状而构成。将诸如AlN和ZnO的纤锌矿结构的压电材料溅射在薄膜11和电极12上以形成压电薄膜13.即使在ZnO的平面上，并且在Al的平面上，薄的C轴薄膜13容易朝向垂直于基板10的方向取向，薄膜11上的薄膜13的取向斜率与电极12之间的差异减小，从而提高表面声学的转换效率波浪。

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