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1. 发明专利

JP2009038050A Single-crystal silicon electrode plate for plasma etching 有权
标题翻译：用于等离子体蚀刻的单晶硅电极板
公开(公告)号：JP2009038050A
公开(公告)日：2009-02-19
申请号：JP2007198286
申请日：2007-07-31
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： SASAKI JUNICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a single-crystal silicon electrode plate for plasma etching which is less in consumption of through pores even when a plasma etching is carried out for a long period, and can perform the uniform etching for a long period.
SOLUTION: The single-crystal silicon electrode plate for plasma etching comprises a single-crystal silicon electrode substrate 1 in which a direction of crystal orientation is uniformly parallel to the thickness of the electrode substrate and which has gas hole parts insertion opening portions bored, and gas hole parts 3 which each have a through capillary 5 and are made of single-crystal silicon having a uniform direction of crystal orientation in parallel to the length of the through capillary, the gas hole parts 3 being fitted in the gas hole parts insertion opening portions 2 of the single-crystal silicon electrode substrate 1 so that the through capillaries 5 of the gas hole parts 3 are made parallel to the thickness of the single-crystal silicon electrode substrate 1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于等离子体蚀刻的单晶硅电极板，即使长时间进行等离子体蚀刻，通孔的消耗也较少，并且可以进行长时间的均匀蚀刻期。解决方案：用于等离子体蚀刻的单晶硅电极板包括其中晶体取向的<100>方向与电极基板的厚度均匀平行的单晶硅电极基板1，并且具有气孔部钻孔的插入开口部分和气孔部3各自具有通孔毛细管5，并且由与通孔毛细管的长度平行的具有均匀的结晶取向方向的单晶硅制成，气孔部3 装配在单晶硅电极基板1的气孔部分插入口部分2中，使得气孔部分3的贯通毛细管5与单晶硅电极基板1的厚度平行。
版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008266137A Crucible for melting silicon, and silicon single crystal pull-up device 有权
标题翻译：用于冶炼硅胶和硅单晶拉丝装置
公开(公告)号：JP2008266137A
公开(公告)日：2008-11-06
申请号：JP2008157014
申请日：2008-06-16
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WAKITA SABURO , SASAKI JUNICHI
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
摘要： PROBLEM TO BE SOLVED: To provide a silicon-melting crucible with less deformation during the melting operation for solid silicon housed therein without needing a carbon-made outer crucible, and to provide a silicon single crystal pull-up device using the crucible.
SOLUTION: This silicon-melting crucible is produced from a molded body prepared by alternately laminating binder layers 5 comprising an amorphous silica powder as a main component and stucco layers 6a and 6b comprising an amorphous silica sand to form a crucible shell, burning the shell at a temperature of 800-1,200°C for 1 to 8 hr, and mutually diffusion-bonding the resultant crystalline silica by sintering.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在熔融操作期间在不需要碳制外坩埚的固体硅的熔融操作中变形较小的硅熔化坩埚，并且提供使用坩埚的硅单晶上拉装置。解决方案：该硅熔融坩埚由通过交替层叠包含无定形二氧化硅粉末作为主要成分的粘合剂层5和包含无定形二氧化硅砂的灰泥层6a和6b而形成坩埚壳而制备的模制体，燃烧壳体在800-1200℃的温度下进行1至8小时，并通过烧结将所得结晶二氧化硅相互扩散结合。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008141104A Silicon electrode plate for plasma etching with superior cracking resistance 有权
标题翻译：用于等离子体蚀刻的硅电极板具有优异的抗开裂性能
公开(公告)号：JP2008141104A
公开(公告)日：2008-06-19
申请号：JP2006327986
申请日：2006-12-05
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： SASAKI JUNICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a silicon electrode plate for plasma etching with superior cracking resistance, the silicon electrode plate for plasma etching free of cracking even in, especially, high-output plasma etching and having the superior cracking resistance.
SOLUTION: The silicon electrode plate 1 for plasma etching has a thin through hole 5 formed from a plasma side of the silicone electrode plate in a direction parallel to the thickness of the silicon electrode plate and a bolt hole 2 bored in the silicon electrode plate nearby its peripheral part is provided with a thin and long groove surrounding the bolt hole 2 peripherally apart from the bolt hole, where the thin and long groove may be a thin and long through groove 9, a thin and long bottomed groove 91, or a thin and long bottomed groove 92.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有优异抗裂性的等离子体蚀刻用硅电极板，即使在特别是高输出等离子体蚀刻中也具有等离子体蚀刻用硅电极板也不会发生裂纹并具有优异的抗开裂性。解决方案：用于等离子体蚀刻的硅电极板1具有从硅树脂电极板的等离子体侧在平行于硅电极板的厚度的方向上形成的薄的通孔5和在硅中钻出的螺栓孔2 在其周边部分附近的电极板设置有围绕螺栓孔2的螺栓孔2的细长槽，该螺栓孔2与螺栓孔相邻，其中薄且长的槽可以是薄且长的通孔9，薄且长的有底槽91，或薄而长的有底槽92.（C）2008，JPO＆INPIT

4. 发明专利

JP2008101277A Target for sputtering and its production method 有权
标题翻译：喷射目标及其生产方法
公开(公告)号：JP2008101277A
公开(公告)日：2008-05-01
申请号：JP2008006283
申请日：2008-01-15
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34 , C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a target of silicon for sputtering in which warpage caused by stress stain is reduced, and a bonding defect, target cracking or the like are hard to occur, and to provide its production method.
SOLUTION: The invention is columnar polycrystal silicon in which crystals are grown to a preferential crystal growth direction, and the content of inevitable impurities is ≤10 ppm. Further, the in-plane distribution width of specific resistance value is
摘要翻译：要解决的问题：为了提供用于溅射的硅的靶，其中由应力污染引起的翘曲降低，并且难以发生接合缺陷，靶裂纹等，并提供其制造方法。解决方案：本发明是晶体生长至优先晶体生长方向的柱状多晶硅，不可避免的杂质含量≤10ppm。此外，比电阻值的面内分布宽度<10％。此外，不可避免的杂质是选自Al，Fe，C和N中的至少一种。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2009051724A High-strength columnar crystal silicon and plasma etching device part formed by the high-strength columnar crystal silicon 审中-公开
标题翻译：高强度柱状晶体硅制成的高强度柱状晶体硅和等离子体蚀刻器件
公开(公告)号：JP2009051724A
公开(公告)日：2009-03-12
申请号：JP2008192031
申请日：2008-07-25
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： SASAKI JUNICHI
IPC分类号： C30B29/06 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/32642
摘要： PROBLEM TO BE SOLVED: To provide a high-strength columnar crystal silicon and plasma etching device parts such as a focus ring, an upper electrode plate, and a shield ring or the like which are made using the high-strength columnar crystal silicon.
SOLUTION: A high purity silicon raw material and a high purity silica raw material are mixed and melted in a crucible, obtained molten metals are solidified in one direction, thereby a high-strength columnar crystal silicon ingot having an interstitial oxygen concentration within a range of 1×10
18 to 2×10
18 atm/cm
3 is made, and the ingot is used to make a focus ring 1, an upper electrode plate 2 and a shield ring 12 of a plasma etching device.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决方案：提供使用高强度柱状晶体制造的高强度柱状晶体硅和等离子体蚀刻装置部件，例如聚焦环，上电极板和屏蔽环等硅。解决方案：将高纯度硅原料和高纯度二氧化硅原料在坩埚中混合并熔融，得到的熔融金属在一个方向上固化，从而形成具有间隙氧浓度的高强度柱状晶体硅锭制成1×10 18 至2×10 18 atm / cm 3 的范围，并且使用该锭制作聚焦环 1，等离子体蚀刻装置的上电极板2和屏蔽环12。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2004322195A Unidirectionally solidified silicon ingot and method for manufacturing the same, and silicon plate and substrate for solar battery 有权
公开(公告)号：JP2004322195A
公开(公告)日：2004-11-18
申请号：JP2003124300
申请日：2003-04-28
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , SASAKI JUNICHI , ISHIWARI YUJI , TSUZUKIBASHI KOJI
IPC分类号： B22D21/00 , B22D25/04 , B22D27/04 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a unidirectionally solidified silicon ingot which is sliced into scarcely cracked thin pieces, and to provide a method for manufacturing the same, and a silicon plate and a substrate for a solar battery. SOLUTION: The 60% or more of preferential growth crystal orientation falls in a range within 15° of the angle difference in two directions; the direction and direction of the crystal orientations. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004091819A Target for sputtering, manufacturing method therefor, and target member 有权
公开(公告)号：JP2004091819A
公开(公告)日：2004-03-25
申请号：JP2002251962
申请日：2002-08-29
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To inhibit segregation of a dopant and stress distortion.
SOLUTION: This manufacturing method comprises adding the dopant to a silicon melt L melted in a crucible 1, solidifying the silicon melt L unidirectionally upward from a lower part to manufacture a silicon ingot C, and slicing the unidirectionally solidified silicon ingot C in a vertical direction to the solidified direction, to obtain a silicon target T1 for sputtering, which consists of polycrystalline silicon with columnar crystals.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003286565A Sputtering target and manufacturing method therefor 有权
标题翻译：溅射目标及其制造方法
公开(公告)号：JP2003286565A
公开(公告)日：2003-10-10
申请号：JP2002089131
申请日：2002-03-27
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34 , H01L21/203
CPC分类号： C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target which hardly causes cambers due to stress distortion, bonding failures, crackings of the target or the like, and to provide a manufacturing method therefor.
SOLUTION: This sputtering target is polycrystal silicon of columnar crystals, and includes unavoidable impurities of 10 ppm or less.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种由于应力变形，接合不良，靶的龟裂等而难以引起翘曲的溅射靶，并提供其制造方法。解决方案：该溅射靶是柱状晶体的多晶硅，包含10ppm以下的不可避免的杂质。版权所有（C）2004，JPO

9. 发明专利

JP2008214189A Crucible for melting silicon and silicon single crystal pulling-up device 有权
标题翻译：用于熔融硅和硅单晶拉丝装置
公开(公告)号：JP2008214189A
公开(公告)日：2008-09-18
申请号：JP2008157020
申请日：2008-06-16
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WAKITA SABURO , SASAKI JUNICHI
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
摘要： PROBLEM TO BE SOLVED: To decrease emission of carbon monoxide gas caused by reaction of a crucible for melting silicon with a carbon crucible into which the crucible is inserted.
SOLUTION: The crucible for melting silicon includes a binder layer 2 containing amorphous silica powder as an essential component and a stucco layer 3 comprising amorphous silica sand on the outer surface of a quartz crucible, in which the binder layer 2 and the stucco layer 3 are alternately superimposed at an arbitrary number of times to form an outside layer part, in which the outside layer part is fired by heating and holding at 600-1,200°C for 0.5-12 hours to make a diffusion-bonded molded article by sintering crystalline silica.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少由硅熔化用坩埚与坩埚插入坩埚的反应引起的一氧化碳气体的排放。解决方案：用于熔化硅的坩埚包括含有无定形二氧化硅粉末作为必需组分的粘合剂层2和在石英坩埚的外表面上包含无定形硅砂的灰泥层3，其中粘合剂层2和灰泥层3以任意次数交替地叠加形成外层部，通过加热保持外层部分，并在600-1200℃下保持0.5-12小时以制造扩散粘合的成型制品烧结结晶二氧化硅。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2003286024A Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering 有权
标题翻译：单向固化硅芯及其制造方法，硅板，太阳能电池基板和靶材料用于溅射
公开(公告)号：JP2003286024A
公开(公告)日：2003-10-07
申请号：JP2002089132
申请日：2002-03-27
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C01B33/02 , C23C14/34 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To reduce working cost and obtain high yield by weight in a unidirectional solidified silicon ingot, a manufacturing method thereof, a silicon plate, a substrate of a solar cell and a target base material for sputtering. SOLUTION: The method of manufacturing a unidirectional solidified silicon ingot C has a process for dipping a polycrystalline silicon seed crystal S into a silicon molten liquid L stored in a crucible 1 and pulling up the silicon ingot with the seed crystal, wherein the seed crystal is planar. COPYRIGHT: (C)2004,JPO

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