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1. 发明专利

JP2008101277A Target for sputtering and its production method 有权
标题翻译：喷射目标及其生产方法
公开(公告)号：JP2008101277A
公开(公告)日：2008-05-01
申请号：JP2008006283
申请日：2008-01-15
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34 , C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a target of silicon for sputtering in which warpage caused by stress stain is reduced, and a bonding defect, target cracking or the like are hard to occur, and to provide its production method.
SOLUTION: The invention is columnar polycrystal silicon in which crystals are grown to a preferential crystal growth direction, and the content of inevitable impurities is ≤10 ppm. Further, the in-plane distribution width of specific resistance value is
摘要翻译：要解决的问题：为了提供用于溅射的硅的靶，其中由应力污染引起的翘曲降低，并且难以发生接合缺陷，靶裂纹等，并提供其制造方法。解决方案：本发明是晶体生长至优先晶体生长方向的柱状多晶硅，不可避免的杂质含量≤10ppm。此外，比电阻值的面内分布宽度<10％。此外，不可避免的杂质是选自Al，Fe，C和N中的至少一种。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2004058075A Casting apparatus and casting method 有权
公开(公告)号：JP2004058075A
公开(公告)日：2004-02-26
申请号：JP2002216874
申请日：2002-07-25
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , SASAKI JUNICHI , ISHIWARI YUJI , TSUZUKIBASHI KOJI
IPC分类号： B22D21/02 , B22D7/00 , B22D7/06 , B22D9/00 , B22D23/06 , B22D27/04 , C30B11/00
CPC分类号： C30B29/06 , B22D7/06 , B22D9/003 , C30B11/00
摘要： PROBLEM TO BE SOLVED: To facilitate filling of raw material and to prevent the contamination by impurities in a casting apparatus and a casting method.
SOLUTION: The casting apparatus is provided with: a mold 2 for holding molten metal 7 and having an opening part at the upper part; a heater 3 disposed above this mold; a gas supply mechanism for supplying inert gas 8 toward the molten metal surface; and a cover 6 disposed between the molten metal surface and the heater. A cover shifting mechanism M controls the extent of opening of the upper part of the mold by relatively shifting the cover to the mold.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2004043250A Crucible for manufacturing hollow columnar silicon ingot and method for manufacturing hollow columnar silicon ingot 有权
标题翻译：用于制造中空玻璃硅芯的制造方法和制造中空玻璃硅的方法
公开(公告)号：JP2004043250A
公开(公告)日：2004-02-12
申请号：JP2002203980
申请日：2002-07-12
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C01B33/02 , C01B33/021
摘要： PROBLEM TO BE SOLVED: To easily manufacture a hollow columnar silicon ingot. SOLUTION: A columnar member 33 is erected on the bottom 32 of a crucible 30. The member 33 is made hollow and constructed by joining a plurality of members arranged in the peripheral direction with a binder comprising SiO 2 . The specific gravity of the columnar member 33 is made higher than that of silicon. A graphite layer 36 is formed on the inner face of the hollow in the columnar member 33. The crucible 30 is put on a support 42 comprising a heat insulating material. Heaters 47, 47 are arranged above and below the crucible 30. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了容易地制造中空柱状硅锭。解决方案：柱状构件33竖立在坩埚30的底部32上。构件33制成中空的，并且通过将包括SiO 2 SB的粘合剂在圆周方向上布置的多个构件接合而构成， SB>。使柱状构件33的比重高于硅的比重。石墨层36形成在柱状构件33的中空部的内表面上。将坩埚30放置在包含绝热材料的支撑体42上。加热器47,47布置在坩埚30的上方和下方。版权所有（C）2004，JPO

4. 发明专利

JP2008081394A Metallic silicon and process for producing the same 有权
标题翻译：金属硅及其制造方法
公开(公告)号：JP2008081394A
公开(公告)日：2008-04-10
申请号：JP2007224909
申请日：2007-08-30
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： TSUZUKIBASHI KOJI , IKEDA HIROSHI , YANAGIMACHI ATSUO , WAKITA SABURO
IPC分类号： C01B33/037 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide metallic silicon which is produced by melting and purifying crude metallic silicon and has a purity suitable as general industrial materials and solar cell materials; and to provide a process for producing the same.
SOLUTION: The metallic silicon is produced by purifying molten crude metallic silicon through unidirectional solidification and has a purity of 3N to 6N and an average crystal grain diameter of 1 mm or greater. The process for producing the metallic silicon having a purity of 3N to 6N and an average crystal grain diameter of 1 mm or greater comprises unidirectionally solidifying the molten crude metallic silicon placed in a container containing fine silica in its inner circumferential layer at a rate of 1 mm/min or less and further cooling the solidified silicon to 200°C or below at a rate of 2°C/min or less. In the method, it is preferable that the solidification rate is 0.1-1 mm/min, and the cooling rate is 0.1-2°C/min.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过熔融和纯化粗金属硅生产并具有适合作为一般工业材料和太阳能电池材料的纯度的金属硅; 并提供其制造方法。解决方案：通过单向凝固纯化熔融的粗制金属硅来制造金属硅，其纯度为3N〜6N，平均晶粒直径为1mm以上。纯度为3N〜6N，平均晶粒直径为1mm以上的金属硅的制造方法包括以1的速度将位于其内周层的含有二氧化硅微细的容器中的熔融粗制金属硅单向凝固 mm /分钟以下，以2℃/分钟以下的速度进一步将固化硅冷却至200℃以下。在该方法中，凝固速度优选为0.1〜1mm / min，冷却速度为0.1〜2℃/ min。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2004322195A Unidirectionally solidified silicon ingot and method for manufacturing the same, and silicon plate and substrate for solar battery 有权
公开(公告)号：JP2004322195A
公开(公告)日：2004-11-18
申请号：JP2003124300
申请日：2003-04-28
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , SASAKI JUNICHI , ISHIWARI YUJI , TSUZUKIBASHI KOJI
IPC分类号： B22D21/00 , B22D25/04 , B22D27/04 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a unidirectionally solidified silicon ingot which is sliced into scarcely cracked thin pieces, and to provide a method for manufacturing the same, and a silicon plate and a substrate for a solar battery. SOLUTION: The 60% or more of preferential growth crystal orientation falls in a range within 15° of the angle difference in two directions; the direction and direction of the crystal orientations. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2004091819A Target for sputtering, manufacturing method therefor, and target member 有权
公开(公告)号：JP2004091819A
公开(公告)日：2004-03-25
申请号：JP2002251962
申请日：2002-08-29
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To inhibit segregation of a dopant and stress distortion.
SOLUTION: This manufacturing method comprises adding the dopant to a silicon melt L melted in a crucible 1, solidifying the silicon melt L unidirectionally upward from a lower part to manufacture a silicon ingot C, and slicing the unidirectionally solidified silicon ingot C in a vertical direction to the solidified direction, to obtain a silicon target T1 for sputtering, which consists of polycrystalline silicon with columnar crystals.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2003286565A Sputtering target and manufacturing method therefor 有权
标题翻译：溅射目标及其制造方法
公开(公告)号：JP2003286565A
公开(公告)日：2003-10-10
申请号：JP2002089131
申请日：2002-03-27
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , ISHIZUKA HIROYA , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C23C14/34 , H01L21/203
CPC分类号： C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target which hardly causes cambers due to stress distortion, bonding failures, crackings of the target or the like, and to provide a manufacturing method therefor.
SOLUTION: This sputtering target is polycrystal silicon of columnar crystals, and includes unavoidable impurities of 10 ppm or less.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种由于应力变形，接合不良，靶的龟裂等而难以引起翘曲的溅射靶，并提供其制造方法。解决方案：该溅射靶是柱状晶体的多晶硅，包含10ppm以下的不可避免的杂质。版权所有（C）2004，JPO

8. 发明专利

JP2003286024A Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering 有权
标题翻译：单向固化硅芯及其制造方法，硅板，太阳能电池基板和靶材料用于溅射
公开(公告)号：JP2003286024A
公开(公告)日：2003-10-07
申请号：JP2002089132
申请日：2002-03-27
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： WAKITA SABURO , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： C01B33/02 , C23C14/34 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To reduce working cost and obtain high yield by weight in a unidirectional solidified silicon ingot, a manufacturing method thereof, a silicon plate, a substrate of a solar cell and a target base material for sputtering. SOLUTION: The method of manufacturing a unidirectional solidified silicon ingot C has a process for dipping a polycrystalline silicon seed crystal S into a silicon molten liquid L stored in a crucible 1 and pulling up the silicon ingot with the seed crystal, wherein the seed crystal is planar. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了降低单向凝固硅锭，其制造方法，硅板，太阳能电池基板和用于溅射的靶基材，降低工作成本并获得高重量。解决方案：制造单向凝固硅锭C的方法具有将多晶硅晶种S浸入坩埚1中储存的硅熔融液体L中并用籽晶拉起硅锭的方法，其中晶种是平面的。版权所有（C）2004，JPO

9. 发明专利

JP2009203499A Target material and method of manufacturing the same 有权
标题翻译：目标材料及其制造方法
公开(公告)号：JP2009203499A
公开(公告)日：2009-09-10
申请号：JP2008044963
申请日：2008-02-26
申请人： Mitsubishi Materials Corp , Mitsubishi Materials Electronic Chemicals Co Ltd , 三菱マテリアル株式会社 , 三菱マテリアル電子化成株式会社
发明人： WAKITA SABURO , IKEDA HIROSHI , TSUZUKIBASHI KOJI , KANAI MASAHIRO , MORI AKIRA
IPC分类号： C23C14/34 , C01B33/02 , C30B11/00 , C30B29/06 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a target material for forming thin film such as a semiconductor, a solar cell or a liquid crystal, wherein the generation of particles is suppressed by reducing the oxygen concentration and the workability and the film quality in the film forming are improved, and a method of manufacturing the same.
SOLUTION: The target material includes a crystal structure oriented in a fixed direction A to give priority and includes ≤3.0×10
18 atom/cm
3 oxygen concentration, preferably ≤1.0×10
18 atom/cm
3 oxygen concentration, 1-20 mm average crystal diameter on a sputter surface and the ratio of oxygen concentration to carbon concentration (oxygen concentration/carbon concentration) of ≤20. The method of manufacturing the same is provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于形成诸如半导体，太阳能电池或液晶的薄膜的目标材料，其中通过降低氧浓度和可加工性以及膜质量来抑制颗粒的产生改善了成膜的方法及其制造方法。解决方案：目标材料包括以固定方向A取向的晶体结构，以优先考虑，并且包括≤3.0×10 18原子/ cm 3 SP 3氧气浓度氧浓度，溅射表面上的平均晶体直径为1-20mm，氧浓度与碳浓度的比值（氧浓度/氧气浓度/ 碳浓度）≤20。提供其制造方法。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008055514A Casting apparatus 有权
标题翻译：铸造设备
公开(公告)号：JP2008055514A
公开(公告)日：2008-03-13
申请号：JP2007297965
申请日：2007-11-16
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WAKITA SABURO , NAKADA YOSHINOBU , SASAKI JUNICHI , ISHIWARI YUJI
IPC分类号： B22D27/04 , B22D25/04
摘要： PROBLEM TO BE SOLVED: To provide a casting apparatus with which an ingot having good unidirectional solidification can stably be produced. SOLUTION: A mold 2 with molten metal 8 held therein, is laid on a cooling plate 3 which forms larger than the bottom surface 2b of the mold 2, and an exposed part 3a as non-laying portion of the mold 2 is formed on the cooling plate 3. Along the outer circumference of the mold 2, a heat insulating material 4 composed of a heat insulating basic body part 4a and a heat insulating corner part 4b is provided so as to cover the exposed part 3a, thereby the heat transfer from the side wall surface 2c of the mold 2 is reduced and the heat is transferred from only the bottom surface 2b side, and the crystal structure of the produced ingot therefore has good unidirectional solidification. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够稳定地制造具有良好的单向凝固的锭的铸造装置。解决方案：将固定有熔融金属8的模具2放置在形成为大于模具2的底面2b的冷却板3上，作为模具2的非铺设部分的露出部分3a是形成在冷却板3上。沿着模具2的外周设置由隔热基体部4a和绝热角部4b构成的隔热材料4，以覆盖露出部3a，从模具2的侧壁面2c的热传递减少，仅从底面2b侧传递热量，因此，所生产的锭的晶体结构具有良好的单向凝固。版权所有（C）2008，JPO＆INPIT

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