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1. 发明专利

JP2010249737A On-vehicle radio wave pulse radar device 有权
标题翻译：车载无线电波脉冲雷达设备
公开(公告)号：JP2010249737A
公开(公告)日：2010-11-04
申请号：JP2009101110
申请日：2009-04-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI
IPC分类号： G01S7/40 , G01S13/93
摘要： PROBLEM TO BE SOLVED: To provide an on-vehicle radio wave pulse radar device having an inexpensive and small-sized constitution, by maximally simplifying the detection circuit of an abnormality generation state, without damaging radar detection performance, capable of detecting with high reliability, sensitivity decline of an RF transmission/reception circuit or an abnormality generation state, including an A/D converter and a signal processing circuit. SOLUTION: The gain of a transmission/reception amplifier, included in the RF transmission/reception circuit 15, is changed individually, optionally and forcibly in a prescribed range by an amplifier gain control circuit 17 controlled by the signal processing circuit 14, and the amplitude of a leakage wave existing in the RF transmission/reception circuit 15 or between transmission/reception antennas is changed. As a result, an IF signal acquired thereby is observed, and a detection value is compared with that at a normal time stored during an initial adjustment time, and an abnormality generating state on the circuit is detected. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供廉价且小型化的车载无线电波脉冲雷达装置，通过最大限度地简化异常发生状态的检测电路，而不损害雷达检测性能，能够用高可靠性，RF发送/接收电路的灵敏度下降或包括A / D转换器和信号处理电路的异常产生状态。解决方案：通过由信号处理电路14控制的放大器增益控制电路17，包括在RF发送/接收电路15中的发送/接收放大器的增益，可选地强制地在规定的范围内变化，并且存在于RF发送/接收电路15中或发送/接收天线之间的泄漏波的振幅改变。结果，观察到由此获取的IF信号，并且将检测值与在初始调整时间期间存储的正常时间进行比较，并且检测到电路上的异常产生状态。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009282420A Repair method of liquid crystal panel 审中-公开
标题翻译：液晶面板修复方法
公开(公告)号：JP2009282420A
公开(公告)日：2009-12-03
申请号：JP2008136272
申请日：2008-05-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI , MINOWA KENICHI
IPC分类号： G02F1/13 , G02F1/1337
摘要： PROBLEM TO BE SOLVED: To provide a repair method of liquid crystal panel, effective for a mode to which the repair treatment using laser can not be applied with respect to a defective pixel on a liquid crystal panel.
SOLUTION: The repair method of liquid crystal panel comprises: a process (S1) of forming a substrate of the liquid crystal panel until the verge of application of alignment film; a process (S2) of performing an electric operation-checking inspection for the substrate after the process (S1); processes (S6, S7) of applying the alignment film onto the substrate after the process (S2) and performing rubbing treatment; and a process (S8) of performing repair treatment on a defective position specified by the electric operation-checking inspection after the processes (S6, S7).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种液晶面板的修复方法，对于对液晶面板上的缺陷像素不能施加使用激光的修复处理的模式是有效的。解决方案：液晶板的修复方法包括：形成液晶板的基板直到施加取向膜的边缘的工艺（S1）; 在处理之后对所述基板进行电动检查检查的处理（S2）的处理（S2）; 在处理（S2）之后将取向膜施加到基板上并进行摩擦处理的工序（S6，S7）以及在处理之后通过电动检查检查（S6，S7）对由缺陷位置进行修理处理的处理（S8）。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008218700A Production process of silicon carbide semiconductor device 审中-公开
标题翻译：硅碳化硅半导体器件的生产工艺
公开(公告)号：JP2008218700A
公开(公告)日：2008-09-18
申请号：JP2007053956
申请日：2007-03-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MATSUNO YOSHINORI , OTSUKA KENICHI , SUGIMOTO HIROSHI , KURODA KENICHI , SHIKAMA SHOZO
IPC分类号： H01L29/47 , H01L21/266 , H01L21/28 , H01L29/06 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To obtain a production process of a silicon carbide semiconductor device capable of reducing the number of processing steps and the number of masks to be used. SOLUTION: An Al ion is injected selectively into a guard ring schedule region 23a and a JTE schedule region 23b in an upper layer part of an n type epitaxial layer 2. An n type dopant N ion 12 is injected selectively into an FS layer schedule region 2a and the JTE schedule region 23b. At the time, the n type dopant N ion 12 is injected by a dose amount smaller than that of the Al ion. Thereafter, the JTE region including the JTE schedule region 23b is processed by annealing into a p type same as the gate ring region including the guard ring schedule region 23a with the impurity concentration set at a low level. An n type FS layer is formed in a region including the FS layer schedule region 2a. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了获得能够减少处理步骤的数量和要使用的掩模的数量的碳化硅半导体器件的生产工艺。解决方案：将Al离子选择性地注入到n型外延层2的上层部分中的保护环调度区域23a和JTE调度区域23b中。将n型掺杂剂N离子12选择性地注入到FS 层调度区域2a和JTE调度区域23b。此时，n型掺杂剂N离子12的注入量小于Al离子的剂量。此后，包括JTE调度区域23b的JTE区域通过退火成与包括杂质浓度设定在低水平的包括保护环调度区域23a的栅环区域相同的p型。在包括FS层调度区域2a的区域中形成n型FS层。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008210938A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008210938A
公开(公告)日：2008-09-11
申请号：JP2007045272
申请日：2007-02-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI , MATSUNO YOSHINORI , OTSUKA KENICHI , KURODA KENICHI
IPC分类号： H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of improving an yield.
SOLUTION: Ti is formed on a drift layer 20 by a sputtering film-forming method. A first Schottky barrier electrode 30a is formed by a pattering method or the like. Then, Ti is formed on the first Schottky barrier electrode 30a by the sputtering film-forming method. A second Schottky barrier electrode 30b is formed by the patterning method or the like. Even if a defective part is generated at the first Schottky barrier electrode 30a when sputter film-forming or patterning Ti, Ti is so film-formed as to cover the defective part in the forming process of the second Schottky barrier electrode 30b.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高产量的半导体器件及其制造方法。解决方案：通过溅射成膜方法在漂移层20上形成Ti。第一肖特基势垒电极30a通过图案化方法等形成。然后，通过溅射成膜法在第一肖特基势垒电极30a上形成Ti。通过图案化方法等形成第二肖特基势垒电极30b。即使当溅射成膜或图案化Ti时，在第一肖特基势垒电极30a处产生缺陷部分，因此在第二肖特基势垒电极30b的形成过程中，Ti覆盖缺陷部分而形成Ti。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2008109146A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008109146A
公开(公告)日：2008-05-08
申请号：JP2007291114
申请日：2007-11-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IMAIZUMI MASAYUKI , FUJIHIRA KEIKO , TARUI YOICHIRO , SUGIMOTO HIROSHI , OTSUKA KENICHI , TAKAMI TETSUYA
IPC分类号： H01L29/12 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/861 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics by reducing the density of an electron charge trap level that is the center of the electron charge trap. SOLUTION: The semiconductor device comprises silicon carbides 2, 3, 4 in which a vertical MOSFET is formed, an oxide film 6 formed on the surface of the silicon carbides 2, 3, 4, and a layer 5 formed between the silicon carbide substrates 2, 3, 4 and the oxide layer 6 and having a compound of a first element made of silicon, a second element made of carbon, and a third element including one or more kinds of element selected from a group consisting of nitrogen, fluorine, sulfur, and selenium. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过降低作为电子电荷陷阱的中心的电子电荷陷阱电平的密度来提供具有优异特性的半导体器件。解决方案：半导体器件包括其中形成垂直MOSFET的碳化硅2,3,4，形成在碳化硅2,3,4的表面上的氧化膜6和形成在硅之间的层5 碳化物基体2,3,4和氧化物层6，并且具有由硅制成的第一元素的化合物，由碳制成的第二元素，以及包含一种或多种选自氮，氟，硫和硒。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007251029A Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造硅碳化硅半导体器件的方法
公开(公告)号：JP2007251029A
公开(公告)日：2007-09-27
申请号：JP2006075123
申请日：2006-03-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI , TARUI YOICHIRO , KURODA KENICHI , OTSUKA KENICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device which can reduce the wasteful amount of semiconductor material.
SOLUTION: A first silicon carbide epitaxial layer 2 is laminated on a silicon carbide substrate 1. Thereafter, a mask 4 for selective growth is laminated on the first silicon carbide epitaxial layer 2 so that a predetermined selective area 3 on the first silicon carbide epitaxial layer 2 is left. Then a second silicon carbide epitaxial layer is laminated on the selective area 3 on the first silicon carbide epitaxial layer 2 as a selective growth layer 5. Next, the selective growth mask 4 is removed, and the height of a step 6 formed at the boundary between an area on the first epitaxial layer 2 other than the removed selective growth mask 4 and the selective area 3 having the selective growth layer 5 laminated thereon is measured. Part of the selective growth layer 5 is removed by an amount corresponding to the measured height of the step 6. As a result, the thickness of the selective growth layer 5 can be accurately measured and when part of the selective growth layer 5 is removed, the amount of removal of the first silicon carbide epitaxial layer 2 can be made highly small.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减少半导体材料的浪费的制造碳化硅半导体器件的方法。解决方案：将第一碳化硅外延层2层压在碳化硅衬底1上。之后，在第一碳化硅外延层2上层叠用于选择性生长的掩模4，使得在第一硅上的预定选择区域3 留下碳化物外延层2。然后，在作为选择性生长层5的第一碳化硅外延层2上的选择区域3上层叠第二碳化硅外延层。接下来，去除选择生长掩模4，并且形成在边界处的台阶6的高度测量第一外延层2上除去除去的选择性生长掩模4之外的区域和层叠有选择性生长层5的选择区域3之间。选择生长层5的一部分被去除与步骤6的测量高度相对应的量。结果，可以精确地测量选择性生长层5的厚度，并且当部分选择性生长层5被去除时，可以使第一碳化硅外延层2的去除量非常小。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007141986A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007141986A
公开(公告)日：2007-06-07
申请号：JP2005331025
申请日：2005-11-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MATSUNO YOSHINORI , SUGIMOTO HIROSHI , OTSUKA KENICHI , KURODA KENICHI , MIKAMI NOBORU
IPC分类号： H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To control reduction in inverse voltage resistance characteristics of a Schottky diode.
SOLUTION: The semiconductor device is a Schottky diode comprising a semiconductor substrate 11, a semiconductor layer 12, an electrode 51, and regions 21, 22. The semiconductor substrate 11 is formed of an n-type semiconductor. The semiconductor layer 12 is formed of an n-type semiconductor and is laminated on the front surface of the semiconductor substrate 11. The electrode 51 is formed of a metal material, and is provided in contact with the front surface 12a in the opposite side of the semiconductor substrate 11 of the semiconductor layer 12. The regions 21, 22 include a p-type impurity. The regions 21, 22 are also provided within the semiconductor layer 12 exposed on the front surface 12a. The region 21 is provided in contact with the end of the electrode 51. The region 22 is provided in contact with the region 21 at the position in the opposite side of the electrode 51 at least for the region 21. Concentration of p-type impurity included in the region 21 is about 1.5 to 2.5 times the concentration of the p-type impurity included in the region 22.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：控制肖特基二极管的反电压电阻特性的降低。解决方案：半导体器件是包括半导体衬底11，半导体层12，电极51和区域21,22的肖特基二极管。半导体衬底11由n型半导体形成。半导体层12由n型半导体形成，层叠在半导体基板11的正面上。电极51由金属材料形成，与前表面12a相接触地设置，半导体层12的半导体衬底11.区域21,22包括p型杂质。区域21,22也设置在暴露在前表面12a上的半导体层12内。区域21设置成与电极51的端部接触。区域22至少对于区域21在电极51的相对侧的位置处与区域21接触.P型杂质的浓度包含在区域21中的包含在区域22中的p型杂质的浓度的约1.5〜2.5倍。（C）2007，JPO＆INPIT

8. 发明专利

JP2007081144A Silicon carbide semiconductor device 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：JP2007081144A
公开(公告)日：2007-03-29
申请号：JP2005267264
申请日：2005-09-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI , MATSUNO YOSHINORI , OTSUKA KENICHI , MIKAMI NOBORU , KURODA KENICHI
IPC分类号： H01L29/861
CPC分类号： H01L29/8611 , H01L21/0445 , H01L29/045 , H01L29/0684 , H01L29/1608 , H01L29/6606
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that has a high breakdown resistance and is capable of providing a high yield. SOLUTION: An n-type withstand voltage layer 3 comprised of a silicon carbide is formed on the main surface of an n-type silicon carbide inclined substrate 2 by an epitaxial growth method. A p-type silicon carbide region 4 having a rectangular planar shape is formed on the n-type withstand voltage layer 3. A p-type contact electrode 5 is formed on the surface of the p-type silicon carbide region 4. A part of the outer periphery of the p-type silicon carbide region 4 which is parallel with the surface 14a(11-20) of the silicon carbide crystal where an avalanche breakdown is liable to occur is located on the short side of the p-type silicon carbide region 4. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高耐击穿性并能够提供高产率的碳化硅半导体器件。解决方案：通过外延生长法在n型碳化硅倾斜衬底2的主表面上形成由碳化硅构成的n型耐压层3。在n型耐电压层3上形成具有矩形平面形状的p型碳化硅区域4.在p型碳化硅区域4的表面上形成p型接触电极5.一部分与碳化硅晶体的表面14a（11-20）平行的易于发生雪崩击穿的p型碳化硅区域4的外周位于p型碳化硅的短边区域4.版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006165225A Semiconductor apparatus 有权
标题翻译： SEMICONDUCTOR APPARATUS
公开(公告)号：JP2006165225A
公开(公告)日：2006-06-22
申请号：JP2004353757
申请日：2004-12-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OTSUKA KENICHI , TARUI YOICHIRO , MATSUNO YOSHINORI , SUGIMOTO HIROSHI , KURODA KENICHI
IPC分类号： H01L29/872 , H01L29/47
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/872 , Y10S388/917
摘要： PROBLEM TO BE SOLVED: To obtain a JTE structure capable of attaining sufficient breakdown voltage characteristics through a simple fabrication process.
SOLUTION: The semiconductor apparatus has an anode electrode 3 making Schottky connection with an n-type drift layer 2 formed on an SiC substrate 1, and a JTE region 6 formed on the periphery thereof. The JTE region 6 consists of a first p-type region 6a formed in a region including below the edge of an anode electrode 3 above the drift layer 2, and a second p-type region 6b formed on the outside thereof and having impurity surface concentration lower than that of the first p-type region 6a. The second p-type region 6b is arranged on the outside of the edge of the anode electrode 3 by 15 μm or more. Impurity surface concentration of the first p-type region 6a is 1.8×10
13 to 4×10
13 cm
-2 , and impurity surface concentration of the second p-type region 6b is 1×10
13 to 2.5×10
13 cm
-2 .
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过简单的制造工艺获得能够获得足够的击穿电压特性的JTE结构。解决方案：半导体装置具有与形成在SiC衬底1上的n型漂移层2和形成在其周边上的JTE区域6进行肖特基连接的阳极电极3。 JTE区域6由形成在漂移层2上方的阳极电极3的边缘的下方的区域上形成的第一p型区域6a和形成在其外部并具有杂质表面浓度的第二p型区域6b 低于第一p型区域6a的位置。第二p型区域6b布置在阳极电极3的边缘的外侧15μm以上。第一p型区域6a的杂质表面浓度为1.8×10 13×4×10 13 cm -2 ，杂质表面浓度的第二p型区域6b为1×10 13 至2.5×10 13 cm -2 。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006017625A Vehicle-mounted pulse radar apparatus 有权
标题翻译：车辆安装脉冲雷达装置
公开(公告)号：JP2006017625A
公开(公告)日：2006-01-19
申请号：JP2004196939
申请日：2004-07-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI
IPC分类号： G01S13/93 , G01S7/40
摘要： PROBLEM TO BE SOLVED: To provide a vehicle-mounted pulse radar apparatus which can detect abnormalities in an RF transmission/reception circuit using a low-priced, small-sized circuit with high reliability. SOLUTION: A signal processing apparatus 14A for calculating a distance d to an object to be detected 7 on the basis of transmission/reception signals W1, W2 comprises variable frequency means 17 for the transmission signal W1 and abnormality decision means for the RF transmission/reception circuit 15A. The variable frequency means 17 changes the frequency of the transmission signal W1 within a predetermined range to compulsorily change the phase state of a leakage wave within the RF transmission/reception circuit 15A. The abnormality decision means compares a normal-level range of fluctuation learned on the basis of normal reception signals with a leakage-included-level range of fluctuation which is observed as a DC component of an IF reception signal when the phase state of the leakage wave changes, generates an abnormality signal E of the RF transmission/reception circuit 15A on the basis of the difference between the normal-level range of fluctuation and the leakage-included-level range of fluctuation, and notifies a control system of a vehicle of an abnormality. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种车载脉冲雷达装置，其可以使用具有高可靠性的低价格小型电路来检测RF发送/接收电路中的异常。解决方案：用于根据发送/接收信号W1，W2计算到被检测对象7的距离d的信号处理装置14A包括用于发送信号W1的可变频率装置17和用于RF的异常判定装置发送/接收电路15A。可变频率装置17将发送信号W1的频率改变在预定范围内，以强制地改变RF发送/接收电路15A内的泄漏波的相位状态。异常判定装置将基于正常接收信号学习的波动的正常水平范围与在泄漏波的相位状态下作为IF接收信号的直流分量观察到的波动的泄漏包括电平范围进行比较根据正常水平的波动范围与包含泄漏的水平波动范围的差异，生成RF发送接收电路15A的异常信号E，并通知车辆的控制系统异常。版权所有（C）2006，JPO＆NCIPI

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