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1. 发明专利

JP2007288167A Semiconductor laser and semiconductor laser module 有权
标题翻译：半导体激光器和半导体激光器模块
公开(公告)号：JP2007288167A
公开(公告)日：2007-11-01
申请号：JP2007068288
申请日：2007-03-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： GOTODA MITSUNOBU , NISHIMURA TETSUYA , MATSUMOTO KEISUKE , HANEDA HIDEKI
IPC分类号： H01S5/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser and a semiconductor laser module which allow suppressing degradation in performance of an RIN etc. and can be applied to an optical communication system without any optical isolator, even in such a case that relatively intense back-reflected light is present.
SOLUTION: The semiconductor laser has a window region made of a semiconductor provided in between an output end surface of laser light and an active layer, the semiconductor having an energy band gap wider than the active layer. The window region has: a first semiconductor layer which extends in the direction of the output end surface from the proximity of an end surface on the output end surface side of the active layer, and a second and a third semiconductor layer which sandwich the first semiconductor layer in the thickness direction. The refractive index of the first semiconductor layer is lower than the refractive indices of the second and the third semiconductor layer. The thickness of the first semiconductor layer is equal to or thicker than the thickness of the active layer, equal to or thinner than the thickness of the second semiconductor layer, and also equal to or thinner than the thickness of the third semiconductor layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够抑制RIN等的性能劣化的半导体激光器和半导体激光器模块，并且可以应用于没有任何光隔离器的光通信系统，即使在相对存在强烈的反射反射光。解决方案：半导体激光器具有设置在激光的输出端面与有源层之间的由半导体构成的窗口区域，该半导体具有比有源层宽的能带隙。窗口区域具有：从有源层的输出端面侧的端面附近的输出端面的方向延伸的第一半导体层和夹着第一半导体层的第二和第三半导体层层厚度方向。第一半导体层的折射率低于第二和第三半导体层的折射率。第一半导体层的厚度等于或厚于有源层的厚度，等于或薄于第二半导体层的厚度，并且也等于或者薄于第三半导体层的厚度。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2005352075A Optical semiconductor element module 审中-公开
标题翻译：光学半导体元件模块
公开(公告)号：JP2005352075A
公开(公告)日：2005-12-22
申请号：JP2004171587
申请日：2004-06-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANEDA HIDEKI , TABATA SEIICHIRO , KAWAMURA ATSUSHI
IPC分类号： G02B6/42 , H01S3/08 , H01S5/00 , H01S5/022 , H01S5/024
CPC分类号： G02B6/4204 , H01L31/0232 , H01S5/02212 , H01S5/02284 , H01S5/02288
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element module permitting to obtain a high coupling efficiency at low cost even if assembly accuracy of a semiconductor element or a spherical lens becomes small.
SOLUTION: A semiconductor laser diode 1 optically coupled to an optical fiber 10 is mounted on a stem 6. Also, a cap 8 fixed to the stem 6 has a light transmission hole part between the optical fiber 10 and the semiconductor laser diode 1, and the spherical lens 7 is attached to this light transmission hole part. The refractive index of the spherical lens 7 is not less than 1.9, and the diameter thereof is 1.5mm to 2.5mm.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使半导体元件或球面透镜的组装精度变小，提供一种允许以低成本获得高耦合效率的光半导体元件模块。解决方案：光学耦合到光纤10的半导体激光二极管1安装在杆6上。而且，固定到杆6上的帽8在光纤10和半导体激光二极管之间具有透光孔部分 1，球面透镜7安装在该透光孔部上。球面透镜7的折射率不小于1.9，其直径为1.5mm至2.5mm。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2006013038A Semiconductor laser array device 审中-公开
标题翻译：半导体激光阵列器件
公开(公告)号：JP2006013038A
公开(公告)日：2006-01-12
申请号：JP2004186265
申请日：2004-06-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , SHIGIHARA KIMIO , KAWASAKI KAZUE , SHIBATA KIMITAKA , YAGI TETSUYA , ONO KENICHI , HANEDA HIDEKI
IPC分类号： H01S5/022 , H01S3/04 , H01S5/00 , H01S5/024 , H01S5/40
CPC分类号： H01S5/024 , H01S5/4031
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser array device having an excellent yield on a manufacture and increasing an output by improving the efficiency of a heat dissipation.
SOLUTION: The semiconductor laser array device is composed of a plurality of semiconductor laser chips 1 arrayed at specified pitches, and a sub-mount 3 for loading each semiconductor laser chip 1. The device is further composed of a heatsink 4 for dissipating the heat generation of each semiconductor laser chip 1 through the sub-mount 3. The inequality 2×T≤S≤10×T is satisfied by using a distance S among the centers of the chips and the thickness T of the sub-mount.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在制造上具有优异成品率并通过提高散热效率来提高输出的半导体激光器阵列器件。解决方案：半导体激光器阵列器件由以规定间距排列的多个半导体激光器芯片1和用于加载每个半导体激光器芯片1的子安装件3组成。该器件还包括散热片4 每个半导体激光器芯片1通过副底座3的发热。通过使用芯片的中心和子座的厚度T之间的距离S来满足不等式2×T≤S≤10×T。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2003332676A Semiconductor optical device 审中-公开
标题翻译：半导体光学器件
公开(公告)号：JP2003332676A
公开(公告)日：2003-11-21
申请号：JP2002132336
申请日：2002-05-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANEDA HIDEKI , SAKAINO TAKESHI , HISA YOSHIHIRO
IPC分类号： H01S5/042 , H01S5/062 , H01S5/227
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/06226 , H01S5/2277
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical device having a structure of protecting a waveguide region against damage in a manufacturing process and a mounting process.
SOLUTION: The ridge waveguide-type semiconductor optical device includes a waveguide region 30 sandwiched between a set of mesa grooves 6, a first mount region 31 and a second mount region 32 located outside of the mesa grooves 6, a first spacer layer provided in the first mount region 31 and a second spacer layer provided in the second mount region 32 a first metal layer 10 which is electrically connected to an upper clad layer in the waveguide region 30 extending from the upside of the waveguide region to the upside of the first mount region 31, and a second metal layer 11 formed on the upside of the second mount region 32. The height of the top surface of the first metal layer 10 on the upside of the first mount region 31 above the undersurface of a semiconductor substrate and that of the top surface of the second metal layer 11 on the upside of the second mount region 32 above the undersurface of the semiconductor substrate are both higher than the height of the upside of the first metal layer 10 on the waveguide region 30.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有保护波导区域的结构的半导体光学器件在制造过程和安装过程中不受损坏。解决方案：脊波导型半导体光学器件包括夹在一组台面槽6之间的波导区域30，位于台面槽6外侧的第一安装区域31和第二安装区域32，第一间隔层设置在第一安装区域31中的第二间隔层和设置在第二安装区域32中的第二间隔层，第一金属层10电连接到波导区域30中的上覆盖层，该波导区域30从波导区域的上侧延伸到第一安装区域31和形成在第二安装区域32的上侧上的第二金属层11.第一金属层10的顶表面的高度在半导体的下表面之上的第一安装区域31的上侧衬底以及位于半导体衬底的下表面之上的第二安装区域32的上侧上的第二金属层11的顶表面的顶表面的高度都高于该衬底的上表面的高度第一金属层10在波导区域30上。（C）2004，JPO

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