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    • 1. 发明专利
    • Defect inspection method and defect inspecting apparatus
    • 缺陷检查方法和缺陷检查装置
    • JP2005321415A
    • 2005-11-17
    • JP2005212914
    • 2005-07-22
    • Mitsubishi Electric Corp三菱電機株式会社
    • ONOYAMA AYUMISAKURAI KOICHIOKA KAZUHIROISHII HIROYUKIFUJIYOSHI KATSUHIRO
    • G01N21/956H01L21/66
    • PROBLEM TO BE SOLVED: To detect defects, such as lack of conductors, short-circuitings, and adhesion of foreign matters on a wafer containing a normal conductive pattern, having irregularities with high probability in a film formation and etching process, in the manufacture of a semiconductor device.
      SOLUTION: A defect inspection apparatus has an imaging element for converting the optical image of a part, containing a normal conductive pattern having surface irregularities, and that of a part compared with a part to be inspected, to an electric charge image for extracting as an electrical signal. The optical image containing a conductive pattern part, having surface irregularities, is set to be an element signal by the imaging element, and the quantity of light in the optical image is controlled so that the element signal is saturated. Further, the element signal of the part to be inspected is fetched by using the quantity of light, thus determining the defects, according to the differential signal of an element signal fetched from the part to be compared and the absolute value of the difference between the element signal of the part having irregularities in the conductive pattern and a saturation level.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了检测诸如缺少导体,短路以及含有正常导电图案的晶片的缺陷,在成膜和蚀刻工艺中具有高概率的不规则性的缺陷, 制造半导体器件。 解决方案:缺陷检查装置具有成像元件,用于将包含具有表面凹凸的正常导电图案的部分的光学图像和与被检查部分相比的部分的光学图像转换成电荷图像, 提取为电信号。 含有具有表面不规则性的导电图案部分的光学图像被成像元件设置为元件信号,并且控制光学图像中的光量,使得元件信号饱和。 此外,通过使用光量来取出要检查的部件的元件信号,从而根据从要比较的部件取出的元件信号的差分信号和第 元件信号在导电图案中具有不规则性和饱和度。 版权所有(C)2006,JPO&NCIPI
    • 10. 发明专利
    • FORMATION OF VAPOR PHASE FILM
    • JPH0625834A
    • 1994-02-01
    • JP20320192
    • 1992-07-08
    • MITSUBISHI ELECTRIC CORP
    • OKA KAZUHIRO
    • C23C14/28
    • PURPOSE:To suppress defects, such as pinholes, and to form denser vapor phase films by making combination use of materials which are completely evaporated with materials which are liable to generate coarse particles at the time of depositing these materials by vacuum evaporation. CONSTITUTION:A target 1-b for vapor deposition consisting of materials (SiO2, Al2O3, etc.) which are completely evaporated is used in combination with a target 1-a for evaporation composed of the materials (SiC, AlN, etc.) which are liable to generate the coarse particles at the time of subjecting these materials to vacuum vapor deposition by high-energy beams. These targets 1-a, 1-b are irradiated with the laser beams 2-a, 2-b respectively in a vacuum and vapor phase films 14 are formed on a substrate 4 by the evaporated particles 12-a, 13-b generated in such a manner. The SiC and the SiO2, are so evaporated that the weight ratio (%) of the SiO2 to the SiC attains about 0.2 to 2 times when for example, the SiC and the SiO2, are combined. The vapor phase film 14 improved in strength and sticking force to the substrate 4 is formed in such a manner.