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1. 发明专利

JP2005057875A Inverter device 有权
标题翻译：逆变器装置
公开(公告)号：JP2005057875A
公开(公告)日：2005-03-03
申请号：JP2003285691
申请日：2003-08-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YANAGIURA SATOSHI , TANDA TETSUSHI , YAMADA KOJI , HAYASHIDA YUKIMASA , MIZOJIRI TETSUO
IPC分类号： H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/49111 , H01L2924/19107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an inverter device which obtains a high withstand voltage by improving a withstand voltage of a sealing resin of a power element. SOLUTION: The inverter device includes the power element 6 connected to a substrate 7. An external extraction electrode 3 is electrically connected to the power element 6 via a metal wire 8. An outside enclosure case 4 is adhered to a base plate 5. The power element 6 is sealed with a silicon gel layer 1, a diffusion preventive resin layer 9 for preventing an epoxy resin composition component (particularly curing agent) from being transmitted, on the silicon gel layer 1, and an epoxy resin layer 2 for holding securing of the electrode 3 and airtightness of a package. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供通过提高功率元件的密封树脂的耐电压来获得高耐受电压的逆变器装置。解决方案：逆变器装置包括连接到基板7的功率元件6.外部引出电极3经由金属线8电连接到功率元件6.外部壳体4粘附到基板5 功率元件6被密封，硅凝胶层1，用于防止环氧树脂组合物成分（特别是固化剂）在硅胶层1上传播的防扩散树脂层9和环氧树脂层2 保持电极3的固定和包装的气密性。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2010066250A Semiconductor testing device and semiconductor test method 有权
标题翻译：半导体测试器件和半导体测试方法
公开(公告)号：JP2010066250A
公开(公告)日：2010-03-25
申请号：JP2009035611
申请日：2009-02-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIODA HIRONORI , MUTO HIROTAKA , YAMATAKE ATSUSHI , KIKUCHI TAKUMI , MIZOJIRI TETSUO , SUEKAWA EISUKE
IPC分类号： G01R31/26
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor testing device and a semiconductor test method capable of measuring fluctuation of a withstand voltage of a semiconductor device caused by an external electric field.
SOLUTION: This device is equipped with the first voltage application means for applying a variable voltage between prescribed electrodes of the semiconductor device; a current detection means for detecting a current flowing between the prescribed electrodes; a GP electrode 3 arranged at a prescribed space distance from the semiconductor device, for applying the external electric field to an electric field mitigation domain 16; and the second voltage application means for applying a variable DC voltage to the GP electrode 3.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够测量由外部电场引起的半导体器件的耐受电压的波动的半导体测试装置和半导体测试方法。解决方案：该装置配备有用于在半导体器件的规定电极之间施加可变电压的第一电压施加装置; 用于检测在规定电极之间流动的电流的电流检测装置; GP电极3，其布置在与半导体器件规定的间隔距离处，用于将外部电场施加到电场缓解区域16; 以及用于向GP电极3施加可变直流电压的第二电压施加装置。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008016564A Resin sealed power module 审中-公开
标题翻译：树脂密封电源模块
公开(公告)号：JP2008016564A
公开(公告)日：2008-01-24
申请号：JP2006184832
申请日：2006-07-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HASEGAWA TAKETOSHI , MIZOJIRI TETSUO , KIKUCHI TAKUMI
IPC分类号： H01L25/07 , H01L23/28 , H01L25/18
CPC分类号： H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a resin sealed power module wherein the leakage current can be suppressed in a long time bias test, the production of air bubbles can be suppressed in the sealing resin upon a temperature shock test, and a disconnection failure scarcely occurs in a bonding wire. SOLUTION: This resin sealed power module comprises a heat radiating plate, an insulating substrate mounted on and soldered to the heat radiating plate, a semiconductor device mounted on the insulating substrate, an exterior case which receives the insulating substrate on which the semiconductor device is mounted, and a sealing resin with which the exterior case is filled. The sealing resin is silicon elastomer having a characteristic that the penetration (JIS K-2220, 1/4 cone) is ≥25 and ≤35. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了获得在长时间偏压试验中可以抑制泄漏电流的树脂密封电力模块，可以在温度冲击试验时在密封树脂中抑制气泡的产生，并且断开接合丝几乎不发生故障。解决方案：该树脂密封电源模块包括散热板，安装在和焊接到散热板上的绝缘基板，安装在绝缘基板上的半导体器件，外壳，其接收绝缘基板，半导体装置，以及装有外壳的密封树脂。密封树脂是具有穿透（JIS K-2220,1 / 4锥）≥25且≤35的特性的硅弹性体。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005142323A Semiconductor module 审中-公开
标题翻译：半导体模块
公开(公告)号：JP2005142323A
公开(公告)日：2005-06-02
申请号：JP2003376666
申请日：2003-11-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIZOJIRI TETSUO , KOGA MASUO , HAYASHIDA YUKIMASA , TAKEI YOSHIAKI
IPC分类号： H01L23/34 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L23/3735 , H01L23/053 , H01L23/24 , H01L25/072 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module, wherein the improved adhesion between a cooling fin and heat radiating members can be achieved, while preventing the deformation of the heat radiating members resulting from a difference in the temperature and in the coefficient of thermal expansion.
SOLUTION: The semiconductor module comprises a plurality of insulating substrates 4, each mounted with a power semiconductor element 5 on the top face, and a plurality of heat radiating members 3, each having the insulation substrate 4 arranged on the top face. Each of the heat-radiating members 3 is set in an engagement hole 1a of a holding plate 1. In this state, the power semiconductor elements 5 are packaged in a case 2. The holding plate 1 is formed of metal and is formed with installation holes 1b.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体模块，其中可以实现冷却翅片和散热构件之间的改善的粘附性，同时防止由于温度差和系数导致的散热构件的变形的热膨胀。解决方案：半导体模块包括多个绝缘基板4，每个绝缘基板4在顶面上安装有功率半导体元件5，以及多个散热构件3，每个具有设置在顶面上的绝缘基板4。每个散热构件3设置在保持板1的接合孔1a中。在该状态下，功率半导体元件5被封装在壳体2中。保持板1由金属形成并形成为安装孔1b。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004103846A Semiconductor device for electric power 审中-公开
公开(公告)号：JP2004103846A
公开(公告)日：2004-04-02
申请号：JP2002264073
申请日：2002-09-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIZOJIRI TETSUO , KOGA MASUO , HAYASHIDA YUKIMASA
IPC分类号： H01L23/28 , H01L23/29 , H01L23/31 , H01L23/34 , H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a means for sufficiently improving adhesive property between a heat sink and a case in a semiconductor device for electric power, in which the heat sink is bonded to the case by using adhesive. SOLUTION: In a bonding part between the heat sink 1 and the case 7 in the semiconductor device for electric power, a case projection part 7a projecting downward is installed in a case side opposite face. A lower end of the case projection part 7a abuts on a heat sink side opposite face. The case projection part 7a is installed only at a peripheral part of a screw clamping part 13 or all periphery of an opening end edge of the case 7. An interval equivalent to the height of the case projection part 7a is formed between the case side opposite face and the heat sink side opposite face. Adhesive 10 is filled in the interval. The thickness of the adhesive 10 can precisely be adjusted or managed by changing the height of the case projection part 7a. Thus, the thickness of the adhesive 10 can be made uniform. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004014919A Inverter module 有权
标题翻译：逆变器模块
公开(公告)号：JP2004014919A
公开(公告)日：2004-01-15
申请号：JP2002168485
申请日：2002-06-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YANAGIURA SATOSHI , HIRAMATSU SEIKI , HASEGAWA TAKETOSHI , MIZOJIRI TETSUO
IPC分类号： H01L23/29 , H01L23/31 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter module in which insulation is prevented from breaking in resin coating by having the resin coating of sufficient thickness with no air bubble even when a creep distance is short from an end of an insulating substrate to conductor foil. SOLUTION: The inverter module is provided with a metal sheet to form a base, an inorganic substrate bonded on the metal sheet; the conductor foil formed on the inorganic substrate to expose the periphery of the inorganic substrate, a semiconductor device packaged on the conductor foil, an outer surrounding case mounted around the metal sheet, silicone gel with which the outer surrounding case is filled, and the resin coating for coating an outer lateral side of the conductor foil and the periphery of the inorganic substrate. In the inverter module, the coating is made of silicon resin filled with powder of a titanic acid compound. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种逆变器模块，其中通过使树脂涂层具有足够的厚度而没有气泡，即使当从绝缘基板的端部到蠕变距离短时，也可以防止在树脂涂层中的断裂，导体箔。解决方案：逆变器模块设置有金属片以形成基底，粘合在金属片上的无机基底; 在无机基板上形成的导体箔露出无机基板的周边，封装在导体箔上的半导体器件，安装在金属片周围的外围壳体，填充有外围壳体的硅凝胶，树脂涂覆用于涂覆导体箔的外侧面和无机基材的周边。在逆变器模块中，涂层由填充有钛酸化合物的粉末的硅树脂制成。版权所有（C）2004，JPO

7. 发明专利

JP2008016551A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008016551A
公开(公告)日：2008-01-24
申请号：JP2006184568
申请日：2006-07-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOGA MASUO , MIZOJIRI TETSUO , HAYASHIDA YUKIMASA
IPC分类号： H01L23/34
CPC分类号： H01L23/22 , H01L23/053 , H01L23/24 , H01L23/3735 , H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device wherein it is cheap and has a long life because it can use a heat radiating plate made of a cheap copper (Cu) material.
SOLUTION: The semiconductor device has an insulating substrate having a formed upper conductor on its top surface, and having a formed lower conductor under its bottom surface; has a semiconductor element mounted on the insulating substrate via an underlaid-element solder; further has a heat radiating plate whereon the insulating substrate is mounted via an underlaid-substrate solder; and moreover has a silicone gel for covering the semiconductor element, the underlaid-element solder, and the upper conductor. Furthermore, the device has a filler for covering the lower conductor, and the underlaid-substrate solder whose thermal conductivity is larger than the air and whose fluidity is higher than the silicone gel.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得廉价且具有长寿命的半导体器件，因为它可以使用由便宜的铜（Cu）材料制成的散热板。解决方案：半导体器件具有在其顶表面上具有形成的上导体的绝缘基板，并且在其底表面下具有形成的下导体; 具有通过底层元件焊料安装在绝缘基板上的半导体元件; 进一步具有散热板，其中绝缘基板经由底层焊料焊接安装; 此外还具有用于覆盖半导体元件，底层元件焊料和上导体的硅凝胶。此外，该器件具有用于覆盖下部导体的填充物和导热率大于空气并且其流动性高于硅凝胶的底层衬底焊料。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007329387A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007329387A
公开(公告)日：2007-12-20
申请号：JP2006160913
申请日：2006-06-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOGA MASUO , MIZOJIRI TETSUO , HAYASHIDA YUKIMASA
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L25/162 , H01L23/647 , H01L25/165 , H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2224/73265 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To secure high reliability by preventing open failure of a gate balance resistor from occurring when operating a semiconductor device. SOLUTION: A first insulating substrate 1 is formed on a heat sink 6, and a semiconductor device 2 is formed thereon. An insulating resin case 8 is provided so as to cover the first insulating substrate 1 and the semiconductor device 2. The second insulating substrate 3 is spaced apart from the first insulating substrate 1, and is attached inside the insulating resin case 8. On the second insulating substrate 3, a resistive element 4 functioning as a gate balancing resistance is fixed with soldering. Thus, the second insulating substrate 3 with the resistive element 4 mounted thereon is made to be spaced apart from the first insulating substrate 1 with the semiconductor device 2 mounted thereon and is attached to the insulating resin case 8 side. The configuration, when operating the semiconductor device 2, prevents the heat generated in the semiconductor device 2 from causing heat conduction to the resistive element 4, thereby controlling solder peeling of the resistive element 4. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过防止在操作半导体器件时发生栅极平衡电阻的开路故障来确保高可靠性。解决方案：第一绝缘基板1形成在散热器6上，半导体器件2形成在其上。设置绝缘树脂外壳8，以覆盖第一绝缘基板1和半导体器件2.第二绝缘基板3与第一绝缘基板1间隔开，并且被安装在绝缘树脂外壳8的内部。在第二绝缘基板1上。绝缘基板3，通过焊接固定用作栅极平衡电阻的电阻元件4。因此，安装有电阻元件4的第二绝缘基板3与安装有半导体器件2的第一绝缘基板1隔开并且被附着到绝缘树脂壳体8侧。当半导体器件2工作时，该结构防止半导体器件2中产生的热量向电阻元件4引起热传导，从而控制电阻元件4的焊料剥离。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006202930A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006202930A
公开(公告)日：2006-08-03
申请号：JP2005012220
申请日：2005-01-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIODA HIRONORI , MUTO HIROTAKA , MIZOJIRI TETSUO
IPC分类号： H01L23/00
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is high in withstand voltage characteristics to prevent troubles caused by a leakage current in its operating state at a normal temperature. SOLUTION: The semiconductor device is equipped with: an insulating board 18 provided with an upper electrode 16 and a lower electrode 17; a chip electrode; at least one conductive ring 36 going around the chip electrode; a semiconductor chip 21 supported on the insulating board 18; at least one conductive wire 42 extending outward from the chip electrode beyond the conductive ring 36; and a minimally charged part 38 covering a part of the conductive ring 36. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高耐压特性的半导体器件，以防止在正常温度下其工作状态下的漏电流引起的故障。解决方案：半导体器件配备有：设置有上电极16和下电极17的绝缘板18; 芯片电极; 围绕芯片电极的至少一个导电环36; 支撑在绝缘板18上的半导体芯片21; 从芯片电极向外延伸超过导电环36的至少一根导线42; 以及覆盖导电环36的一部分的最小带电部分38.权利要求：（C）2006，JPO＆NCIPI

10. 发明专利

JP2008010618A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2008010618A
公开(公告)日：2008-01-17
申请号：JP2006179175
申请日：2006-06-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIZOJIRI TETSUO , KOGA MASUO , HAYASHIDA YUKIMASA
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/34 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which is capable of eliminating strains caused by a thermal and a mechanical stress from a soldered joint between electrodes and a circuit pattern, very reliable, and has a long service life. SOLUTION: The power semiconductor device is equipped with a level difference part provided with an elastic standing part, which is formed so as to stand up higher than the thickness of the circuit pattern unit from the layout surface of the circuit pattern unit on an insulating board; and a junction which is provided with a flat plane that is provided separately from a circuit pattern-formed surface by a prescribed distance, and supported by the standing part. An electrode terminal is electrically connected to the flat plane of the junction by soldering. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够消除来自电极之间的焊接接头和电路图案的热和机械应力引起的应变的功率半导体器件，非常可靠，并且具有长的使用寿命。解决方案：功率半导体器件配备有设置有弹性站立部分的电平差部分，其形成为从电路图案单元的布局表面立起高于电路图案单元的厚度，绝缘板; 以及设置有与电路图案形成面分开规定距离并由立起部支承的平面的接合部。电极端子通过焊接与连接的平面电连接。版权所有（C）2008，JPO＆INPIT

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