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1. 发明专利

JP2001257384A INFRARED RAY DETECTION ELEMENT 失效
公开(公告)号：JP2001257384A
公开(公告)日：2001-09-21
申请号：JP2000064535
申请日：2000-03-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIGUMA HIROKO , MIYASHITA SHOJI , UCHIUMI YOSHIKAZU , HATA HISATOSHI
IPC分类号： G01J1/02 , G01J5/02 , G01J5/20 , H01L35/22
摘要： PROBLEM TO BE SOLVED: To provide the infrared ray detection element of high sensitivity by a simple manufacture process by using perovskite-type Mn oxide thin film whose resistance temperature coefficient is higher than a conventional case. SOLUTION: A wiring layer laminated on a part of a SiO2 layer which is laminated on a Si substrate via a gap part is provided with, an electrode layer constituted of plural layers which are laminated by straddling a part of the wiring layer and a part of the SiO2 layer and which have at least iridium layers and a bolometer thin film, which is laminated by straddling a part of the electrode layer and a part of the SiO2 layer and is mainly constituted of provskite- type manganese oxide.

2. 发明专利

JP2001251159A THIN FILM PIEZOELECTRIC ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001251159A
公开(公告)日：2001-09-14
申请号：JP2000063196
申请日：2000-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIUMI YOSHIKAZU , YAMADA AKIRA , MAEDA CHISAKO , UCHIKAWA HIDEFUSA
IPC分类号： H03H9/17 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To provide a thin film piezoelectric element where a resonance frequency is adjustable and a desired resonance frequency is obtained with high accuracy and to provide its manufacturing method. SOLUTION: This element is provided with a vibrating part consisting of a piezoelectric film 14 formed on a substrate 11, at least one pair of electrodes 13 and 15 connected to the upper and lower surfaces of the piezoelectric film 14 and a cavity 20 for resonance formed under the film 14, and the vibrating part is covered with an organic resin film 21.

3. 发明专利

JPH05166410A MANUFACTURE OF DIELECTRIC POWDER FOR MICROWAVE 失效
公开(公告)号：JPH05166410A
公开(公告)日：1993-07-02
申请号：JP3941992
申请日：1992-02-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , UCHIUMI YOSHIKAZU , WATAI HISAO
IPC分类号： H01B3/00 , H01P7/10
摘要： PURPOSE:To manufacture dielectric powder which is used for microwave, is fine and compositionally homogeneous and excellent in composition controllability. CONSTITUTION:A solution containing at least one of a plurality of elements which occupy the same atomic position in the structure of dielectric as dispersoid and other dielectric constitutive components as metallic ions is used as dispersion medium. The PH of the solution is controlled in order by use of dispersoid as a nucleus according to the precipitation from homogeneous solution so that the dielectric constitutive components in the solution are precipitated in order. The precipitate indicates fine and well dispersible particle size distribution.

4. 发明专利

JPH04209759A DIELECTRIC PORCELAIN FOR HIGH FREQUENCY 失效
公开(公告)号：JPH04209759A
公开(公告)日：1992-07-31
申请号：JP40035590
申请日：1990-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , HONDA TOSHIHISA , UCHIUMI YOSHIKAZU , WATAI HISAO
IPC分类号： C04B35/00 , C04B35/46 , C04B35/495 , H01B3/12
摘要： PURPOSE:To increase the range of dielectric constant, raise a Q value, reduce and stabilize the temperature coefficient and provide high performance of IC substrates for microwaves using the resultant composition by providing the aforementioned composition, expressed by the general formula and further including Mn2O3 therein. CONSTITUTION:The aforementioned dielectric porcelain for high frequency is formed from a composition, expressed by the general formula [(x) is 0.42-0.54; (y) is 0.06-0.18; (z) is 0.4; (m) is 0.05-0.7; (n) is 0-1; (x+y) is 0.61 and prepared by further adding

5. 发明专利

JPH0473806A DIELECTRIC PORCELAIN MATERIAL FOR MICROWAVE 失效
公开(公告)号：JPH0473806A
公开(公告)日：1992-03-09
申请号：JP18619690
申请日：1990-07-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , HONDA TOSHIHISA , WATAI HISAO , SAITO KIYOSHI , UCHIUMI YOSHIKAZU
IPC分类号： C04B35/46 , C04B35/468 , H01B3/12 , H01G4/12 , H01P7/10
摘要： PURPOSE:To simultaneously obtain high specific dielectric constant, high Q value (1/dielectric loss), a small and stable temperature characteristic in a microwave frequency region by using a material of specific composition. CONSTITUTION:Formula I shows component composition. That is, a part of Sm2O3 contained in BaO-TiO2-Sm2O3 porcelain is replaced by component (SrO.CeO2) and component (CaO.CeO2) to increase Q-value while component SrTiO3 is contained to increase specific dielectric constant. In the formula I expressed by a molar fraction, 0.1

6. 发明专利

JPH0342862A PACKAGE FOR INTEGRATED CIRCUIT ELEMENT 失效
公开(公告)号：JPH0342862A
公开(公告)日：1991-02-25
申请号：JP17865789
申请日：1989-07-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIUMI YOSHIKAZU , OKUMURA MASATOMI , SAITO KIYOSHI , HARIMA MITSUHIRO , YAMAMOTO YASUSHI , KAWAHARA KAZUO , TOSHIDA KENJI , SHIOMI SATORU
IPC分类号： H01L23/34
摘要： PURPOSE:To reduce trouble due to a thermal cause at the time of operation by loading an integrated circuit element having high heat generation and a large area by using high thermal conductive and low thermal expansive aluminum nitride ceramics as a package base while molding the integrated circuit element with a resin. CONSTITUTION:The loading section of an integrated circuit element 1 at the central section of a package base 2 composed of high thermal conductive aluminum nitride ceramics is coated with Au or Ag paste, and a metallized section 3 is formed through heating. Glass paste as adhesives 7 is printed around the metallized section 3, a lead frame 4 is loaded, glass as adhesives 7 is melted through heating, and the lead frame 4 and the package base 2 are bonded. The metallized section 3 of a package is coated with an Au-Si eutective alloy or solder and the integrated circuit element 1 is loaded, and the package base 2 and the integrated circuit element 1 are bonded through heating at a fixed temperature. The integrated circuit element 1 and the lead frame 4 are joined through thermocompression bonding by the wires 5 of Au after cooling. The whole is molded with a resin 9 such as an epoxy resin.

7. 发明专利

JPH025001B2 失效
公开(公告)号：JPH025001B2
公开(公告)日：1990-01-31
申请号：JP8935583
申请日：1983-05-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKADA YOSHIO , UCHIUMI YOSHIKAZU , SATO KEN
IPC分类号： H01C7/10 , C04B35/00 , C04B35/453

8. 发明专利

JPS62219994A CERAMIC BOARD MATERIAL 失效
公开(公告)号：JPS62219994A
公开(公告)日：1987-09-28
申请号：JP6266286
申请日：1986-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIUMI YOSHIKAZU , OKUMURA MASATOMI , SAITO KIYOSHI , IDO TAKEO
IPC分类号： B32B18/00 , C04B35/16 , C04B35/195 , H05K1/03

9. 发明专利

JPS6112039A Ceramic substrate 失效
标题翻译：陶瓷基材
公开(公告)号：JPS6112039A
公开(公告)日：1986-01-20
申请号：JP13367384
申请日：1984-06-26
申请人： Mitsubishi Electric Corp
发明人： UCHIUMI YOSHIKAZU
IPC分类号： H05K1/03 , H01L21/52 , H01L21/58 , H01L21/84 , H01L23/15
CPC分类号： H01L21/84
摘要： PURPOSE:To obtain the ceramic substrate having the coefficient of thermal expansion approximate to that of semiconductor silicon, a high thermal conductivity and a high insulating property in plane direction by a method wherein an insulating film of specific thickness is formed on the surface of a ceramic plate having SiC as the main component and also having the heat conductivity in excess of the specific value. CONSTITUTION:An insulating film having the final film thickness of 5mum or above is formed on the surface of a ceramic plate containing SiC as main component and having the thermal conductivity of 1.6W/cm deg.C or above. Such ceramic plate as above-mentioned has the SiC content of 90-99%, desirably 95- 99%, it has a high thermal conductivity in general and has the coefficient of thermal expansion of 4.5X10 / deg.C or thereabout. A reactive sintered Si ceramic plate and the like, which is obtained by sintering while Si powder and C powder are mixed in SiC powder, for example, is used. Also, the glass, material consisting of crystal and glass, thin film type ceramic, Si3N4 and the like can be used as the material of the insulating film.
摘要翻译：目的：通过在陶瓷的表面上形成特定厚度的绝缘膜的方法，获得具有接近于半导体硅的热膨胀系数的陶瓷基板，具有高导热性和平面方向上的高绝缘性以SiC为主要成分，导热系数超过规定值。构成：以SiC为主要成分，导热率为1.6W / cm 3以上的陶瓷板的表面形成最终膜厚为5μm以上的绝缘膜。如上所述的这种陶瓷板的SiC含量为90-99％，理想的为95-99％，通常具有高导热性，并且热膨胀系数为4.5×10 -6 /℃或在那边使用例如通过在Si粉末和C粉末中烧结而获得的反应性烧结Si陶瓷板等。此外，可以使用玻璃，由晶体和玻璃构成的材料，薄膜型陶瓷，Si 3 N 4等作为绝缘膜的材料。

10. 发明专利

JPS5951916B2 失效
公开(公告)号：JPS5951916B2
公开(公告)日：1984-12-17
申请号：JP8370079
申请日：1979-06-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIUMI YOSHIKAZU , MURAKAMI TADAYOSHI
IPC分类号： B32B43/00 , B29C63/00 , B32B37/00

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