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    • 1. 发明专利
    • Circuit board with built-in solid-state electrolytic capacitor, and its manufacturing method
    • 具有内置固态电解电容器的电路板及其制造方法
    • JP2008130722A
    • 2008-06-05
    • JP2006312597
    • 2006-11-20
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • YAMAMOTO YOSHIYUKISUGAYA YASUHIRO
    • H01G9/012H01G9/00H01G9/004H01G9/04
    • PROBLEM TO BE SOLVED: To electrically connect an aluminum metal layer to a through-hole copper plating layer not through an oxide layer on the surface of the aluminum, and to obtain low-resistance connection between the aluminum metal layer of an anode and the through-hole of a solid-state electrolytic capacitor.
      SOLUTION: This circuit board with the built-in solid-state electrolytic capacitor comprises a first plating layer 9 and a second plating layer 10 formed in the through-hole, the metal plating layer using an alkaline plating solution formed on the surface of the anode 1 on the wall surface in the through-hole 8 as the first plating layer 9, and the metal plating layer formed on the surface of an insulating resin layer 3 on the wall surface in the through-hole 8 and on the entire wall surface in the through-hole 8 including the surface of the first plating layer 9 as the second plating layer 10.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了将铝金属层与通孔铜镀层不是通过铝表面上的氧化物层电连接,并且在阳极的铝金属层之间获得低电阻连接 和固态电解电容器的通孔。

      解决方案:具有内置固态电解电容器的电路板包括形成在通孔中的第一镀层9和第二镀层10,金属镀层使用形成在表面上的碱性电镀液 作为第一镀层9的通孔8的壁面上的阳极1和在通孔8的壁面上形成在绝缘树脂层3的表面上的金属镀层,整个 包括第一镀层9作为第二镀层10的表面的通孔8中的壁表面。(C)2008,JPO&INPIT

    • 4. 发明专利
    • Sheet module and its manufacturing method
    • 表格模块及其制造方法
    • JP2004311788A
    • 2004-11-04
    • JP2003104553
    • 2003-04-08
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • YAMAMOTO YOSHIYUKINAKATANI SEIICHIKOJIMA TOSHIYUKI
    • H01L23/28H01L21/56H01L21/60H01L23/12H01L23/29H01L23/31
    • H01L2221/68354H01L2224/16H01L2924/01019H01L2924/01078
    • PROBLEM TO BE SOLVED: To provide a high density semiconductor built-in module having a felexible performance with an identical material used for an underfill and an insulating layer of the semiconductor, and to provide a method for manufacturing it. SOLUTION: The semiconductor built-in module has an electrically insulating layer (101) comprising a mixture of an inorganic filler and a resin, an interconnection carrier layer having at least an interonnection pattern (102) on one side of the layer (101), an interconnection pattern layer (103) on the other side, an inner via hole (104) for mutually connecting between the pattern (102) and the pattern (103), and a semiconductor (105) embedded in the electrically insulating layer, The external electrode of the semiconductor (105) is connected to the pattern (102) through a projecting electrode (106), an electrically insulating material existing between the external electrode surface of the semiconductor (105) and the interconnection carrier comprises the same material as the electrically insulating layer, and the pattern layer (103) on the layer (101) and the other side of the layer (101) forms approximately identical surface. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供具有与用于底部填充物和半导体的绝缘层的相同材料具有柔性性能的高密度半导体内置模块,并提供其制造方法。 解决方案:半导体内置模块具有包含无机填料和树脂的混合物的电绝缘层(101),在层的一侧至少具有连接图案(102)的互连载体层( 101),另一侧的互连图案层(103),用于在图案(102)和图案(103)之间相互连接的内部通孔(104)和嵌入电绝缘层中的半导体(105) 半导体(105)的外部电极通过突出电极(106)连接到图案(102),存在于半导体(105)的外部电极表面和互连载体之间的电绝缘材料包括相同的材料 作为电绝缘层,层(101)上的图案层(103)和层(101)的另一侧形成大致相同的表面。 版权所有(C)2005,JPO&NCIPI