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1. 发明专利

JP2007181190A Semiconductor device and method for fabricating same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007181190A
公开(公告)日：2007-07-12
申请号：JP2006317314
申请日：2006-11-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA KEISUKE , MORI MITSUYOSHI , YAMAGUCHI TAKUMI
IPC分类号： H04R19/00 , G01S7/521 , H01L29/84 , H04R31/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a compact hollow capacitor with simple configuration.
SOLUTION: On a single substrate 10, a hollow capacitor portion including a pair of counter electrodes 14 and 24 and a hollow part 23 located between the counter electrodes and semiconductor circuit portions 11a, 11b and 12 are formed. The hollow part 23 of the hollow capacitor portion is surrounded by insulating layers 16, 17 and 18, and a through hole 22 is formed in the insulating layer 17, 18 to communicate with the hollow part 23. The top surface of the insulating layer 17 covering the hollow part 23 is planarized. Part of the insulating layer 17 located to the lateral sides of the hollow part 23 supports the other part of the insulating layer 17 located on the hollow part 23 and the upper counter electrode 24.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成具有简单构造的紧凑型中空电容器的半导体器件。解决方案：在单个基板10上，形成包括一对相对电极14和24的中空电容器部分和位于相对电极和半导体电路部分11a，11b和12之间的中空部分23。中空电容器部分的中空部分23被绝缘层16,17和18围绕，并且在绝缘层17,18中形成通孔22以与中空部分23连通。绝缘层17的顶表面覆盖中空部23被平坦化。位于中空部23的侧面的绝缘层17的一部分支撑位于中空部23和上部对极24上的绝缘层17的另一部分。（C）2007，JPO＆INPIT

2. 发明专利

JP2005276924A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005276924A
公开(公告)日：2005-10-06
申请号：JP2004084937
申请日：2004-03-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KAIHARA KAZUHIRO , SHIMADA YASUHIRO , KATO TAKEHISA , TANAKA KEISUKE
IPC分类号： H01G4/224 , H01L21/822 , H01L21/8246 , H01L27/04 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing generation of fringe capacitance while patterning the electrode finely.
SOLUTION: A second electrode 102 is arranged in parallel with a first electrode 101. A capacitor insulation film 100 is composed of a ferroelectric material and arranged in a region between the first electrode 101 and each second electrode 102. Assuming the dielectric constant of the capacitor insulation film 100 is e, thickness of the capacitor insulation film 100 is d μm, smaller one of the area at a part where the second electrode 102 is in contact with the capacitor insulation film 100 or the area at a part where the first electrode 101 is in contact with the capacitor insulation film 100 is S μm
2 , and the peripheral length at the part where the second electrode 102 is in contact with the capacitor insulation film 100 or the part where the first electrode 101 is in contact with the capacitor insulation film 100 having a smaller are is L μm, the value of S corresponding to each second electrode 102 is 12 μm
2 or less, and the value of L×d×e/S is 52 or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件，能够抑制边缘电容的产生，同时精细地图案化电极。解决方案：第二电极102与第一电极101平行布置。电容器绝缘膜100由铁电体材料构成并且布置在第一电极101和每个第二电极102之间的区域中。假设介电常数电容绝缘膜100的厚度e为e，电容绝缘膜100的厚度为dμm，第二电极102与电容绝缘膜100接触的部分的面积的区域中的一个以下，第一电极101与电容器绝缘膜100接触为Sμm 2 ，第二电极102与电容绝缘膜100接触的部分的周长，第一电极101与Lμm较小的电容绝缘膜100接触，对应于每个第二电极102的S的值为12μm 2 或更小，并且L× d×e / S为52以下。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005098776A Inspection mode discrimination circuit 审中-公开
标题翻译：检查模式辨别电路
公开(公告)号：JP2005098776A
公开(公告)日：2005-04-14
申请号：JP2003331132
申请日：2003-09-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MARUYAMA SHINICHI , TANAKA KEISUKE , OTSUKA MASAHIKO
IPC分类号： G01R31/28 , G01R31/3185 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide an inspection mode discrimination circuit capable of switching between inspection mode and regular mode without providing inspection dedicated terminal in combination with regular circuits without increasing the inspection circuits.
SOLUTION: Instead of inspection dedicated terminal, timing pulses are generated from the measured value of the crystal oscillator stabilization counter 110, thereby the circuit to be used in the regular operation e.g. the analogue-digital converter 107 has made to operate before the integrated circuit starts to operate. The logic circuit 120 discriminates the operation mode is whether the inspection mode or regular operation mode based on the analogue-digital conversion value.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在检查模式和常规模式之间切换的检查模式鉴别电路，而不需要在不增加检查电路的情况下组合常规电路的情况下提供检查专用端子。
解决方案：代替检查专用端子，从晶体振荡器稳定计数器110的测量值产生定时脉冲，从而在常规操作中使用的电路例如。模数转换器107已经在集成电路开始工作之前进行操作。逻辑电路120基于模拟数字转换值来区分操作模式是检查模式还是常规操作模式。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004302324A On-screen display device 审中-公开
公开(公告)号：JP2004302324A
公开(公告)日：2004-10-28
申请号：JP2003097541
申请日：2003-04-01
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KOTANI SATORU , MARUOKA TOMOHIKO , TANAKA KEISUKE
IPC分类号： G06F13/00 , G09G5/00 , G09G5/22 , G09G5/24 , G09G5/30 , G09G5/37 , H04N5/445
CPC分类号： G09G5/222
摘要： PROBLEM TO BE SOLVED: To provide an on-screen display device capable of effectively using a video RAM (random access memory) area.
SOLUTION: The on-screen display device is constituted by being equipped with a video RAM 200 which holds character data of a desired character to be displayed, a display character setting means 100 of arranging in the video RAM 200 bits as many as the remainder obtained by dividing character data of each character by the number of bits readable by single access to the video RAM 200 together by one line, buffers 501 and 502 storing part of character data of respective characters, a character generator ROM (read only memory) 400 which outputs corresponding font data according to character codes, and a display control means 300 which reads character data out of the video RAM 200 through the buffers 501 and 502 and reads the font data generated by the character generator ROM 400 to output an on-screen output signal.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2008186833A Manufacturing method of solid-state image pickup device 审中-公开
标题翻译：固态图像拾取器件的制造方法
公开(公告)号：JP2008186833A
公开(公告)日：2008-08-14
申请号：JP2007016462
申请日：2007-01-26
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： INABA YUICHI , TANAKA KEISUKE , YOKO TAKANORI
IPC分类号： H01L27/14 , G02B5/22 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374 , H04N9/07
摘要： PROBLEM TO BE SOLVED: To measure a film thickness by specifying the same region continuously when measuring the film thickness of a planarization film.
SOLUTION: A reflection film 5 having a prescribed pattern is formed at a non-pixel region where no pixels are formed on a semiconductor substrate; a color film 20 is formed on the semiconductor substrate where the reflection film 5 is formed; and the planarization film 22 is formed on the color film 20 so that the film thickness of a region corresponding to the reflection film 5 has a prescribed value. A region corresponding to the reflection film 5 in the color film 20 is formed to transmit light applied when specifying a region corresponding to the reflection film 5 in the planarization film 22.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过在测量平坦化膜的膜厚时连续地指定相同的区域来测量膜厚度。解决方案：在半导体衬底上不形成像素的非像素区域形成具有规定图案的反射膜5; 在形成有反射膜5的半导体基板上形成彩色膜20; 并且平坦化膜22形成在彩色膜20上，使得与反射膜5相对应的区域的膜厚度具有规定值。形成与彩色膜20中的反射膜5对应的区域，以便在平坦化膜22中指定与反射膜5相对应的区域时施加的光。透明度：（C）2008，JPO＆INPIT

6. 发明专利

JP2008159679A Solid-state imaging device, method of manufacturing the same 审中-公开
标题翻译：固态成像装置，其制造方法
公开(公告)号：JP2008159679A
公开(公告)日：2008-07-10
申请号：JP2006344308
申请日：2006-12-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA KEISUKE , MATSUNO TOSHINOBU , YAMAGUCHI TAKUMI
IPC分类号： H01L27/14 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid-state imaging device having a lamination film interference filter with an excellent optical characteristic, while attaining a high yield and a low manufacturing cost, and to provide the solid-state imaging device.
SOLUTION: The method includes: a step for two-dimensionally forming a plurality of photoelectric conversion parts 303 with respect to a substrate 301 along its one main surface; and a step for forming the lamination film interference filter 306 by alternately laminating films 401, ..., 411 and films 402, ..., 412, having mutually different reflectivities, in the upper part of each of the plurality of photoelectric conversion parts 303. Concerning the step for forming the lamination film interference filter 306, the films 401-412 are formed by lamination through the use of a spattering method under a film deposition condition with a larger oxygen partial pressure ratio or a film deposition condition for allowing the film deposition temperature to be a room temperature or below.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造具有光学特性优异的层叠膜干涉滤光片的固态成像装置的制造方法，同时实现高产率和低制造成本，并提供固态成像装置。解决方案：该方法包括：沿其一个主表面相对于衬底301二维地形成多个光电转换部303的步骤; 以及通过在多个光电转换部分的每一个的上部交替层叠具有相互不同的反射率的膜401，...，411和膜402，...，412形成层压膜干涉滤光器306的步骤关于形成层叠膜干涉滤光器306的步骤，通过使用溅射法在具有较大的氧分压比的膜沉积条件下进行层压来形成膜401-412，或者用于允许膜沉积温度为室温以下。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006173205A Method and device for making single domain of ferroelectric particle 审中-公开
标题翻译：用于制造单电极粒子的方法和装置
公开(公告)号：JP2006173205A
公开(公告)日：2006-06-29
申请号：JP2004360337
申请日：2004-12-13
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KAIHARA KAZUHIRO , TANAKA KEISUKE
IPC分类号： H01L21/8246 , H01L27/105 , H01L41/187 , H01L41/257
摘要： PROBLEM TO BE SOLVED: To provide a method for making a single domain of ferroelectric particles, with which directions of domains of a plurality of ferroelectric particles are arranged in one direction for a ferroelectric substance formed of a plurality of ferroelectric particles where the directions of crystal axes do not previously become clear. SOLUTION: Electric fields in a plurality of different directions are applied to the ferroelectric particles 102. Thus, the electric field in an application direction forming the smallest angle among angles formed between a polarization expression direction and the electric field applying direction is contributed to inversion of polarization. Thus, the value of the electric field required for arranging the directions of polarization of the ferroelectric particles to one direction can be made smaller than a case when the electric field in one direction is applied to the ferroelectric particles. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种制造铁电体颗粒的单畴的方法，多个铁电体颗粒的畴的方向在一个方向上排列成由多个铁电体颗粒形成的铁电体，其中，以前不清楚晶轴的方向。解决方案：将多个不同方向的电场施加到铁电粒子102.因此，在极化表达方向和电场施加方向之间形成的角度之间形成最小角度的施加方向上的电场有贡献到极化反转。因此，可以使将铁电体粒子的极化方向配置为一个方向所需的电场的值小于将一个方向的电场施加到铁电粒子的情况。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005309006A On-screen display device 审中-公开
标题翻译：屏幕显示设备
公开(公告)号：JP2005309006A
公开(公告)日：2005-11-04
申请号：JP2004124649
申请日：2004-04-20
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KOTANI SATORU , MARUOKA TOMOHIKO , TANAKA KEISUKE
IPC分类号： G09G5/00 , G09G5/30 , H04N5/445
摘要： PROBLEM TO BE SOLVED: To effectively use the video RAM area of an on-screen display device which displays characters by coding modification information while taking the combination of modifications into consideration when a line or characters of a plurality of lines are modified.
SOLUTION: Desired character data are stored in the video RAM 200 and a line attribute code 2 obtained by coding while a condition by which modification indications can not be executed at the same time, like the combination of a modification indication showing a space and a modification indication showing an emphasized character etc., in a space display line is excluded, is stored in a buffer 50; when a line to be displayed begins to be displayed, the line attribute code 2 read out of the buffer 5090 is decoded by a decoding part 700 into a line attribute code 3 as original line modification information to generate an on-screen output signal.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地使用屏幕显示装置的视频RAM区域，通过对修改信息进行编码来显示字符，同时在修改多个行的行或字符的同时考虑修改的组合。解决方案：期望的字符数据存储在视频RAM200中，并且通过编码获得的行属性代码2，同时在不能同时执行修改指示的条件下，如表示空格的修改指示的组合并且排除在空间显示行中显示强调字符等的修改指示，被存储在缓冲器50中; 当要显示的行开始显示时，从缓冲器5090读出的行属性代码2由解码部分700解码为行属性代码3作为原始行修改信息以生成屏上输出信号。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005100659A Ferroelectric material or high dielectric material or semiconductor memory device using them, and its manufacturing method 审中-公开
标题翻译：使用它们的电介质材料或高介电材料或半导体存储器件及其制造方法
公开(公告)号：JP2005100659A
公开(公告)日：2005-04-14
申请号：JP2000005532
申请日：2000-01-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA KEISUKE , NAGANO YOSHIHISA , UEMOTO YASUHIRO , OTSUKI TATSUO
IPC分类号： C01B25/16 , H01B3/02 , H01B3/10 , H01L21/316 , H01L21/8242 , H01L27/06 , H01L27/10 , H01L27/108 , H01L29/51
CPC分类号： H01B3/10 , H01L21/31604 , H01L27/0688 , H01L29/51
摘要： PROBLEM TO BE SOLVED: To suppress deterioration of ferroelectric property or high dielectric property by hydrogen reduction action.
SOLUTION: A ferroelectric material or a high dielectric material used as a capacity insulating film has a crystal structure made of a chemical formula [A
2+ B
+ CO
4
3- ] that has hydrogen or heavy hydrogen as a component element. In this ferroelectric material or high dielectric material structure, a CO
4
3- tetrahedron of adjoining molecules shares B
+ atom and forms a hydrogen bond network composed of [-B
+ atom-CO
4
3- tetrahedron-B
+ atom-CO
4
3- tetrahedron-B
+ atom-]. Since B
+ atom is a main factor for demonstrating ferroelectric or high dielectric performance, deterioration of the electric property of the ferroelectric film is eliminated in the heat treatment in a reduction atmosphere and the capacity insulating film having the excellent ferroelectric property or high dielectric property can be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过氢还原作用抑制铁电性质的劣化或高介电性。用作电容绝缘膜的铁电材料或高电介质材料具有由化学式[A 2 + B + CO < 具有氢或重氢作为组分元素的SB> 4 3 - ]。在这种铁电材料或高电介质材料结构中，相邻分子的一个三氧化二锑具有共同的B + SP + 由[-B + 原子-CO 4 SB 3 四面体-B + 原子-CO 4 3 - 四面体-B + 原子 - ]。由于B + 原子是演示铁电或高介电性能的主要因素，所以在还原气氛中的热处理中消除了铁电体膜的电性能的劣化，并且具有优异的电容绝缘膜可以获得铁电性或高介电性。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005055715A On-screen display device 审中-公开
标题翻译：屏幕显示设备
公开(公告)号：JP2005055715A
公开(公告)日：2005-03-03
申请号：JP2003287129
申请日：2003-08-05
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KOTANI SATORU , MARUOKA TOMOHIKO , TANAKA KEISUKE
IPC分类号： H04N5/66 , G09G5/00 , G09G5/30 , G09G5/377
CPC分类号： G09G5/222 , G09G5/30 , G09G5/40 , H04N5/44504 , H04N21/42692 , H04N21/431
摘要： PROBLEM TO BE SOLVED: To provide an on-screen display device which effectively makes active use of a video RAM region of a character to perform special character display. SOLUTION: The display device is provided with a register 500 which holds the information performing the special character display of through, spaces, etc., of respective lines, compares the display information of the respective lines and the information of the register 500 and a display line counter now shown in Fig., and outputs the information as to whether the special character display is executed to a video RAM 200 to effectively make active use of the video RAM 200 region of the portion to be subjected to the special character display. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供有效地使用字符的视频RAM区域进行特殊字符显示的屏幕显示装置。
解决方案：显示装置设置有保存执行各行的通过，空格等的特殊字符显示的信息的寄存器500，比较各行的显示信息和寄存器500的信息和如图所示的显示行计数器，并且输出关于是否对视频RAM200执行特殊字符显示的信息，以有效地使用要受到特殊字符的部分的视频RAM200区域的有效使用显示。版权所有（C）2005，JPO＆NCIPI

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