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1. 发明专利

JP2005055806A Driving method for plasma display panel 有权
标题翻译：等离子显示面板的驱动方法
公开(公告)号：JP2005055806A
公开(公告)日：2005-03-03
申请号：JP2003288758
申请日：2003-08-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAKAJIMA TORU , HAMADA KIYOSHI , OKUMURA SHIGEYUKI , IMAI YOICHI , MASUDA SHINJI
IPC分类号： G09G3/20 , G09G3/288 , G09G3/291 , G09G3/292 , G09G3/294 , G09G3/298 , G09G3/28
摘要： PROBLEM TO BE SOLVED: To provide a driving method for a plasma display panel which makes stable initialization discharge possible in an initialization period.
SOLUTION: The initialization period of at least one sub-field among a plurality of sub-fields has the first initialization period, the second initialization period, and the third initialization period. In the first initialization period, the discharge is generated by scanning electrodes SC
1 to SC
n as cathodes and sustaining electrodes SU
1 to SU
n as anode; in the second initialization period, the discharge is generated by the sustaining electrodes SU
1 to SU
n and data electrode D
1 to D
n as cathodes and the scanning electrodes SC
1 to SC
n as the anodes; and in the third initialization period, the discharge is generated by the scanning electrodes SC
1 to SC
n as the cathodes and the sustaining electrodes SU
1 to SU
n and the data electrode D
1 to D
n as the anodes. The discharge to be generated in the second initialization period starts the discharge by the data electrode D
1 to D
n as the cathode after starting the discharge by the sustaining electrodes SU
1 to SU
n as the cathodes.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种在初始化期间能够进行稳定的初始化放电的等离子体显示面板的驱动方法。解决方案：多个子场中的至少一个子场的初始化周期具有第一初始化周期，第二初始化周期和第三初始化周期。在第一初始化期间，通过扫描电极SC 1 到SC n 作为阴极和维持电极SU 1 到SU n 为阳极; 在第二初始化期间，由维持电极SU 1 SB> n 和数据电极D 1 产生D n 为阴极，扫描电极SC 1 为SC n 为阳极; 并且在第三初始化期间，作为阴极和维持电极SU 1 ，由扫描电极SC 1 到SC n 产生放电，到SU n 和数据电极D 1 到D n 作为阳极。在第二初始化时段中产生的放电由维持电极SU 1 放电至D n > 1 至SU n 作为阴极。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JPH1161401A SPUTTERING AND DEVICE THEREFOR 失效
公开(公告)号：JPH1161401A
公开(公告)日：1999-03-05
申请号：JP22464897
申请日：1997-08-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORI SEIICHIRO , NISHIHARA MUNEKAZU , KIMURA TEIICHI , NAKAGAMI YUICHI , IMAI YOICHI
IPC分类号： C23C14/34 , C23C14/35
摘要： PROBLEM TO BE SOLVED: To form a thin film uniform in film thickness and film quality on a substrate of a large area. SOLUTION: This sputtering method is the one in which a substrate 2 and a target 3 are oppositely arranged in a vacuum vessel 1, the inside of the vacuum vessel 1 is evacuated, furthermore, an operating gas is introduced from a gas introducing port 11 to control the gaseous pressure therein to a prescribed one, electric power is applied to the space between the vacuum vessel 1 and the vicinity of the target 3 from a power source 4, and magnets 6 arranged in the vicinity of the target 3 are moved, and the material in the target 3 is film-formed on the substrate 2. In this case, in accordance with the magnet moving rate by a magnet moving rate operating means 14, a gas flow rate operating means 13 is operated by an arithmetic and control means 15, by which the gaseous pressure in the vacuum vessel 1 is changed or discharge electric power is changed to change film forming conditions, so that the non- uniformity of the film structure caused by the change of the magnet moving rate is corrected to form a thin film uniform in film thickness and film quality.

3. 发明专利

JP2002146539A METHOD AND SYSTEM FOR CVD FILM DEPOSITION 失效
公开(公告)号：JP2002146539A
公开(公告)日：2002-05-22
申请号：JP2000338531
申请日：2000-11-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IMAI YOICHI , NISHIWAKI TORU , HARADA TAKASHI
IPC分类号： C23C16/455 , C23C16/34 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a CVD film deposition method in which the amount of raw materials to be supplied in film deposition in a CVD system using solid or liquid raw materials is detected and controlled, to improve continuous film-deposition reproducibility, to remove difference between systems or difference between reaction chambers, and to stabilize film quality. SOLUTION: The CVD film deposition system for applying CVD film deposition to a material to be treated by using the raw materials introduced into the reaction chamber 1 has: a raw-material supply system for introducing source gas into the reaction chamber 1; a mass spectrograph 9 provided to analyze the source gas in the reaction chamber 1; and a control means 12 for outputting a command to control the amount of the raw materials to be supplied from the raw-material supply system into the reaction chamber on the basis of the analytical results from the mass spectrograph 9. By measuring the concentration of the source gas using the mass spectrograph 9 and regulating the transportation amount of the raw materials on the basis of the measured concentration, the control of the transportation amount of the solid or liquid raw materials, which has been hitherto impossible, is made possible and difference between systems or difference between reaction chambers is removed, and resultantly, continuous reproducibility of film deposition rate, film composition, etc., is realized and stable film quality and improved productivity are attained.

4. 发明专利

JPH1161400A SPUTTERING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH1161400A
公开(公告)日：1999-03-05
申请号：JP22464997
申请日：1997-08-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORI SEIICHIRO , KIMURA TEIICHI , NAKAGAMI YUICHI , NISHIHARA MUNEKAZU , IMAI YOICHI
IPC分类号： C23C14/34 , C23C14/35
摘要： PROBLEM TO BE SOLVED: To prevent the generation of abnormal discharge on a target in dielectric film forming to increase discharge power and to increase the film forming rate. SOLUTION: This sputtering method is the one in which a target 2 and a substrate are oppositely arranged in a vacuum vessel, a rare gas and a reactive gas are introduced into the vacuum vessel from a gas introducing port 13, while plasma is generated, a magnet 7 arranged on the back face of the target is moved, and a compd. of the material in the target 2 and the reactive gas is coating-formed on the substrate. In this case, in accordance with the position of the magnet 7, the position into which the reactive gas is introduced is changed and the reactive gas is locally fed to the vicinity of the plasma 14, by which the compounding of the part not exposed to the plasma 14 with the reactive gas is suppressed, and the facts that the part is dielectrically broken down in the case of being exposed to the plasma to generate abnormal discharge are prevented.

5. 发明专利

JPH1143766A FORMATION OF THIN FILM AND DEVICE THEREFOR 失效
公开(公告)号：JPH1143766A
公开(公告)日：1999-02-16
申请号：JP19627997
申请日：1997-07-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAGAMI YUICHI , NISHIHARA MUNEKAZU , KIMURA TEIICHI , MORI SEIICHIRO , IMAI YOICHI
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
摘要： PROBLEM TO BE SOLVED: To secure uniform film and to prolong the service life of a target by uniformly progressing the erosion of the target on the whole body in the reciprocating range of a magnetic circuit unit. SOLUTION: This thin film forming method is the one in which at least one magnetic circuit unit 3 arranged on the back side of a target 1 is slid parallel to the target face, and while a magnetron plasma ring 2 is moved on the target face, coating is formed. In this case, a fixed magnet 4 having reversed polarity is arranged in the vicinity of the slide edge of the magnetic circuit unit 3, and the magnetic circuit unit 3 is alienated from the target face in the vicinity of the slide edge of the magnetic circuit unit 3, by which the magnetic field distribution on the target is reduced when the magnetic circuit unit 3 turns back, and film formation is executed.

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