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1. 发明专利

JP2006261707A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006261707A
公开(公告)日：2006-09-28
申请号：JP2006183213
申请日：2006-07-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HASHIMOTO SHIN , KISHIDA TAKENOBU , EGASHIRA KYOKO , HATA YOSHIFUMI , NISHIWAKI TORU , TANAKA TOMOYA
IPC分类号： H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a method that can stably manufacture an epitaxial cobalt side layer in a vacuum area to be normally employed in a semiconductor mass production process without aggregation and spikes.
SOLUTION: This semiconductor manufacturing method comprises a step for distributing nonmetallic elements to a surface-adjacent area on a semiconductor layer, a process for stacking a metal film on the semiconductor layer and a process that epitaxially grows a semiconductor metal compound layer through interactions between the semiconductor layer elements and the metal film metals by thermal metal film treatment. The above process for distributing nonmetallic elements comprises a process for forming a compound layer made of semiconductor elements and nonmetallic elements on the semiconductor layer, a process for distributing compound layer's nonmetallic elements to a surface-adjacent area through recoiling due to the radiation of particle energy lines onto the compound layer and a process for removing the compound layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在半导体批量生产过程中通常在真空区域内稳定地制造外延钴侧层的方法，而不会产生聚集和尖峰。解决方案：该半导体制造方法包括将非金属元素分布到半导体层上的表面相邻区域的步骤，在半导体层上层叠金属膜的工艺以及通过外延生长半导体金属化合物层的工艺通过热金属膜处理在半导体层元件和金属膜金属之间的相互作用。用于分配非金属元素的上述方法包括在半导体层上形成由半导体元件和非金属元素制成的化合物层的方法，通过颗粒能量的辐射通过反复将化合物层的非金属元素分布到表面相邻区域的方法化合物层和除去化合物层的方法。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007012782A Substrate processing method 审中-公开
标题翻译：基板处理方法
公开(公告)号：JP2007012782A
公开(公告)日：2007-01-18
申请号：JP2005190011
申请日：2005-06-29
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KANEKO TOSHIO , NISHIWAKI TORU
IPC分类号： H01L21/265 , H01J37/317 , H01L21/304 , H01L29/78
CPC分类号： H01L21/02057 , H01L21/26513 , H01L21/67213
摘要： PROBLEM TO BE SOLVED: To reduce any defect produced in a substrate for a semiconductor wafer or the like and in a pattern formed on the substrate. SOLUTION: The substrate processing method comprises a process of installing a substrate 201 in a container 210 that is a vacuum atmosphere including particles; and a process of processing, in the container 210, a substrate 201, while moving the substrate 201 at a predetermined relative speed to the container 210. An upper limit is determined, which is permitted for the number or density of defects produced in the substrate 201 owing to particles upon the processing, and the predetermined relative speed is set to be a relative speed or lower when the number or density of defects becomes an upper limit value. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少在半导体晶片等的基板和在基板上形成的图案中产生的缺陷。解决方案：基板处理方法包括将基板201安装在包括颗粒的真空气氛的容器210中的过程; 并且在容器210中处理基板201，同时以基于预定的相对速度将基板201移动到容器210的过程。确定允许在基板中产生的缺陷的数量或密度的上限 201，并且当缺陷的数量或密度变为上限值时，预定的相对速度被设定为相对速度或更低。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2002146539A METHOD AND SYSTEM FOR CVD FILM DEPOSITION 失效
公开(公告)号：JP2002146539A
公开(公告)日：2002-05-22
申请号：JP2000338531
申请日：2000-11-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IMAI YOICHI , NISHIWAKI TORU , HARADA TAKASHI
IPC分类号： C23C16/455 , C23C16/34 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a CVD film deposition method in which the amount of raw materials to be supplied in film deposition in a CVD system using solid or liquid raw materials is detected and controlled, to improve continuous film-deposition reproducibility, to remove difference between systems or difference between reaction chambers, and to stabilize film quality. SOLUTION: The CVD film deposition system for applying CVD film deposition to a material to be treated by using the raw materials introduced into the reaction chamber 1 has: a raw-material supply system for introducing source gas into the reaction chamber 1; a mass spectrograph 9 provided to analyze the source gas in the reaction chamber 1; and a control means 12 for outputting a command to control the amount of the raw materials to be supplied from the raw-material supply system into the reaction chamber on the basis of the analytical results from the mass spectrograph 9. By measuring the concentration of the source gas using the mass spectrograph 9 and regulating the transportation amount of the raw materials on the basis of the measured concentration, the control of the transportation amount of the solid or liquid raw materials, which has been hitherto impossible, is made possible and difference between systems or difference between reaction chambers is removed, and resultantly, continuous reproducibility of film deposition rate, film composition, etc., is realized and stable film quality and improved productivity are attained.

4. 发明专利

JPH0945764A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0945764A
公开(公告)日：1997-02-14
申请号：JP19015195
申请日：1995-07-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAO HIDEJI , NISHIWAKI TORU , ISHIDA TETSUO , HARADA TAKASHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To form a high-melting-point metallic silicide in the bottom portion of the opening portion of a semiconductor device without increase of its resistance and its junction leakage. SOLUTION: A manufacturing method comprises a process for forming titanium 6 both on the inner wall and bottom surface of an opening portion 5 on an insulation film 4 on a silicon substrate 1 and on the insulation film 4 itself, a process for forming in succession titanium nitride 7 and tungsten 8 on the formed titanium 6 including the one inside the opening portion 5 in the temperature region wherein the formed titanium 6 and the silicon substrate 1 are not monocrystallized or polycrystallized by them reacting on each other, and a process for monocrystallizing or polycrystal silicifying at least one portion of the formed titanium 6 by a heat treatment.

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