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1. 发明专利

JP2008211134A Bipolar transistor device 审中-公开
标题翻译：双极晶体管器件
公开(公告)号：JP2008211134A
公开(公告)日：2008-09-11
申请号：JP2007048901
申请日：2007-02-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARAI KAZUHIRO
IPC分类号： H01L21/331 , H01L21/822 , H01L21/8222 , H01L23/50 , H01L27/04 , H01L27/06 , H01L29/737
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a bipolar transistor device which allows external connection of LCR and flexible adjustment of capacitance, resistance and inductance with high versatility, and which can further ensure satisfaction of demanding requirements at higher-frequency region. SOLUTION: The bipolar transistor device includes a lead frame having semiconductor element mounting parts and many leads arranged along two sides, where the semiconductor element mounting parts are in opposition to each other; a semiconductor element where a bipolar transistor and circuit elements connected to the bipolar transistor are mounted; an input pad configuring high-frequency signal input terminal and an output pad configuring high-frequency signal output terminal are arranged so as to face on each opposing side, being mounted and electrically connected on the semiconductor element mounting parts; and an encapsulating material which covers the semiconductor elements mounted on the semiconductor element mounting parts and is formed for leading front edges of the leads. Each one of the semiconductor element mounting parts and the leads is formed integrally. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供允许LCR的外部连接和灵活调整电容，电阻和电感的双极晶体管器件，具有高通用性，并且可进一步确保在较高频率区域满足苛刻要求。解决方案：双极晶体管器件包括具有半导体元件安装部分和沿着两侧布置的许多引线的引线框架，其中半导体元件安装部件彼此相对; 半导体元件，其中安装了双极晶体管和连接到双极晶体管的电路元件; 配置高频信号输入端子的输入焊盘和构成高频信号输出端子的输出焊盘被布置成面对每个相对侧，安装并电连接在半导体元件安装部分上; 以及封装材料，其覆盖安装在半导体元件安装部上的半导体元件，并且形成为用于引导引线的前端。半导体元件安装部和引线中的每一个一体地形成。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2005093918A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005093918A
公开(公告)日：2005-04-07
申请号：JP2003328478
申请日：2003-09-19
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SONETAKA SHINICHI , OTA TOSHIMICHI , TOYODA YASUYUKI , UCHIDA SHINICHI , ARAI KAZUHIRO
IPC分类号： H01L21/331 , H01L21/822 , H01L27/04 , H01L29/73
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a backward surge breakdown voltage between a base and an emitter, without making the high frequency characteristics degraded.
SOLUTION: The semiconductor device comprises a transistor group 110a where a collector is connected to a semiconductor substrate 100, a base is connected to a base pad 160 via a base wiring 130a and a base drawing wiring 180, and an emitter is connected to an emitter pad 150 through an emitter wiring 120a and an emitter drawing wiring 170. It also comprises a transistor group 110b, where a collector is connected to the semiconductor substrate 100, and a base and an emitter are reverse-connected between the base and emitter of the transistor group 110a via an emitter wiring 120b and a base wiring 130b.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够改善基极和发射极之间的向后浪涌击穿电压的半导体器件，而不会使高频特性劣化。解决方案：半导体器件包括晶体管组110a，其中集电极连接到半导体衬底100，基极经由基极配线130a和基底引线180连接到基座焊盘160，并且发射极被连接通过发射极布线120a和发射极引线布线170发射到发射极焊盘150.它还包括晶体管组110b，其中集电极连接到半导体衬底100，并且基极和发射极反向连接在基极和晶体管组110a的发射极经由发射极配线120b和基极配线130b。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2008209277A Characteristic measuring device of semiconductor device, and measuring method using it 审中-公开
标题翻译：半导体器件的特性测量装置和使用它的测量方法
公开(公告)号：JP2008209277A
公开(公告)日：2008-09-11
申请号：JP2007046966
申请日：2007-02-27
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARAI KAZUHIRO
IPC分类号： G01R31/26
摘要： PROBLEM TO BE SOLVED: To provide a measuring device capable of acquiring stable measurement accuracy even when performing high frequency characteristic measurement, and a measuring method using it.
SOLUTION: This measuring device for measuring characteristics of a semiconductor device includes a base table for placing thereon a semiconductor device which is a measuring object, and a position regulation member for calibration detachable from the base table.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供即使在进行高频特性测量时也能够获得稳定的测量精度的测量装置，以及使用该测量装置的测量方法。解决方案：用于测量半导体器件的特性的测量装置包括：用于放置作为测量对象的半导体器件的基台和用于校准的位置调节构件，可从基台拆卸。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2004134630A Bipolar transistor 审中-公开
公开(公告)号：JP2004134630A
公开(公告)日：2004-04-30
申请号：JP2002298761
申请日：2002-10-11
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SONETAKA SHINICHI , TOYODA YASUYUKI , ARAI KAZUHIRO , OTA TOSHIMICHI
IPC分类号： H01L21/331 , H01L27/082 , H01L29/06 , H01L29/732
CPC分类号： H01L29/732 , H01L27/0825 , H01L29/0692
摘要： PROBLEM TO BE SOLVED: To provide a bipolar transistor which achieves transistors of flexible size, each having the regularly varied number of emitters, in response to a market demand for flexibility in transistor size.
SOLUTION: The bipolar transistor is provided with a semiconductor substrate; a plurality of transistor regions 2a, 2b, 2c, 2d formed on the substrate; an insulating film that has been formed covering the regions 2a, 2b, 2c, 2d; lead wirings 4, 5 which pass through the regions 2a, 2b, 2c, 2d and the insulating film and drawn up onto the insulating film; and bonding pads which are connected to the lead wirings 4, 5. In the transistor, the numbers of emitters constituting the individual regions 2a, 2b, 2c, 2d, respectively, are defined by a binary system (2, 4, 8, 16 etc.).
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004087532A Bipolar transistor, oscillation circuit, and voltage-controlled oscillator 审中-公开
公开(公告)号：JP2004087532A
公开(公告)日：2004-03-18
申请号：JP2002242499
申请日：2002-08-22
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OTA TOSHIMICHI , ARAI KAZUHIRO , TOYODA YASUYUKI , SONETAKA SHINICHI
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/73 , H01L29/732 , H03B5/12 , H03B5/18
CPC分类号： H03B5/1847 , H01L24/05 , H01L27/0658 , H01L29/0692 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/42304 , H01L29/7302 , H01L29/732 , H01L29/7322 , H01L2224/0603 , H01L2924/1305 , H03B5/1203 , H03B5/1231 , H03B5/1243 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To attain a desired high frequency performance when a bipolar transistor is employed as the oscillation amplifier of an oscillation circuit while reducing the size and cost. SOLUTION: Collector/base capacitance Ccb is increased by forming parasitic capacitance between a capacitance regulating wire 11 connected with a base pad 7 and an N + collector substrate through an insulating film 3 and an N collector substrate. Using that capacitance as at least a part of a balance capacitance constituting an oscillation circuit, a bipolar transistor having a small operating region 2 and functioning as an oscillation amplifier is fabricated in a semiconductor manufacturing process. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2006013346A Bipolar transistor 审中-公开
标题翻译：双极晶体管
公开(公告)号：JP2006013346A
公开(公告)日：2006-01-12
申请号：JP2004191641
申请日：2004-06-29
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARAI KAZUHIRO , OTA TOSHIMICHI , TOYODA YASUYUKI , SONETAKA SHINICHI
IPC分类号： H01L21/331 , H01L21/822 , H01L21/8222 , H01L27/04 , H01L27/06 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To provide a bipolar transistor that enables the capacity to be freely adjusted and hold up to the demands at higher frequency bands.
SOLUTION: This bipolar transistor comprises a semiconductor substrate, a transistor operating region formed on the semiconductor substrate, an insulating film formed over the semiconductor substrate, the first and second leads that penetrate the insulating film from the transistor operation area and connect to at least two of the collector, base and emitter for availability on the insulting film, the first and second bonding pads connected to the first and second leads, and the first and second capacity adjustment wires connected to the first and second pads and formed on different layers, respectively.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种双极型晶体管，其能够自由地调节容量并且能够满足更高频带的要求。解决方案：该双极晶体管包括半导体衬底，形成在半导体衬底上的晶体管工作区域，形成在半导体衬底上的绝缘膜，第一和第二引线从晶体管操作区域穿透绝缘膜并连接到用于绝缘膜上的可用性的集电体，基极和发射极中的至少两个，连接到第一和第二引线的第一和第二焊盘以及连接到第一和第二焊盘并形成在不同的第一和第二焊盘上的第一和第二电容调整线层。版权所有（C）2006，JPO＆NCIPI

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