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1. 发明专利

JPS5988864A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5988864A
公开(公告)日：1984-05-22
申请号：JP19920782
申请日：1982-11-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KONDOU SHIYUUJI , SHIRAGASAWA TSUYOSHI
IPC分类号： H01L25/18 , H01L21/60 , H01L25/065 , H01L25/07 , H01L27/00
摘要： PURPOSE:To obtain an LSI device of a high density and high reliability by a method wherein the main surface of a slave substrate shorter in two sides than a master substrate is placed on the latter substrate in opposition and then connected by means of solder bumps or bases, and element regions are hermetically sealed with the bumps and bases which surround functional element parts. CONSTITUTION:The functional elements 7 and 7' at each center of the master substrate 5 and the slave substrate 6 and electrodes 8 and 8' in the periphery are connected. By corresponding to electrodes 9' of the slave substrate 6, connection electrodes 9 are provided at the functional element part 7 of the master substrate 5. Next, the master substrate 5 is covered with a projection film 10, the electrode pads 8 and the connection electrode parts 9 are exposed, Ti 12 and Pt 13 are laminated, the Sn-Pb solder bases 11 are formed to a hight of 10- several ten mum, and junction bases are likewise formed to the electrodes 9' of the slave substrate 6. The bumps can be provided. At the same time, a sealing metallic dam 14 of a solder alloy is formed in the periphery of the groups of the electrodes pads 9 and 9' by surrounding the functional element regions 7 and 7'. When solder is fused by mounting the substrate 6 on the substrate 5, the functional element regions 7 and 7' are connected and hermetically sealed with the solder dam 14.

2. 发明专利

JPS58139934A PAPER FEEDING CONTROL DEVICE 失效
公开(公告)号：JPS58139934A
公开(公告)日：1983-08-19
申请号：JP2001682
申请日：1982-02-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OOMURA MORIHARU , KONDOU SHIYUUJI
IPC分类号： G03G21/00 , B65H3/44 , B65H7/04 , G03G15/00
摘要： PURPOSE:To make continuous paper feeding possible, in case selected copying paper in a paper feeder is used up, by switching another paper feeder, which is available for the same sized paper as the said paper or a larger one in size than it, over into a state of feed operation, in case of a control device comprising more than two paper feeders. CONSTITUTION:In selection of a cassette, when a manual selector switch 31a on a control panel 31 is pressed, the existing cassette selected is discriminated at a microcomputer 32. At a time when a cassette 1 at the upper step is selected so far, a cassette 2 at the lower step is, in turn, selected. Next, the presence of copying paper in the cassette 2 is found by the discrimination of the presence of paper through the output of paper presence detection switches SW1 and SW2 and information of the paper size also through the output of lead switches S1 and S2, and paper size is displayed in addition. And, when the copying paper in the cassette 2 is used up later during repeat copying operation, the upper cassette 1 available for the same sized paper as the said paper or a larger one in size than it is used instead upon switchover.

3. 发明专利

JPS5848983A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5848983A
公开(公告)日：1983-03-23
申请号：JP14853281
申请日：1981-09-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIRAGASAWA TSUYOSHI , NOYORI MASAHARU , KONDOU SHIYUUJI , NAKADA YOSHIROU
IPC分类号： G02B6/42 , H01L27/15 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/022
摘要： PURPOSE:To inspect a function before the device is divided into chips by forming the input/output terminals of beams to the main surface of the second semiconductor layer in structure in which the first semiconductor layer shaping a light-emitting section and an optical guide is held by the second semiconductor layer to form multilayer structure and beams from the light-emitting section are extracted from the end section of the first semiconductor layer. CONSTITUTION:An N type InP layer 2, an InGaAsP active layer 3 functioning as the optical guide, a P type InP layer 4 and an N type InGaAsP layer 5 are laminated and deposited onto an N type InP substrate 1, an opening section 9 entering the active layer 3 is bored, and the section 9 is used as an output terminal section 7. Al Electrodes 8 are each attached onto the layer 5 at a position separating from the terminal section 7 and the back of the substrate 1, and an optical IC element 11 is manufactured. When the function of the element 11 is inspected, a probe 12 is contacted with the electrode 8 of the surface and electrical signals are supplied, and laser beams 13', which are generated in the active layer 3 and reach to the opening section 9, are extracted by means of a glass fiber 15 inserted into the section 9 and inspected. When the function is excellent, the device is divided into two chips according to a broken line.

4. 发明专利

JPS57207353A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS57207353A
公开(公告)日：1982-12-20
申请号：JP9358481
申请日：1981-06-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NOYORI MASAHARU , KONDOU SHIYUUJI , SHIRAGASAWA TSUYOSHI
IPC分类号： H01L21/3205 , H01L21/31 , H01L23/52
摘要： PURPOSE:To prevent the crack generation on a surface protecting film, by providing notches on a part of a metallic wiring. CONSTITUTION:The thick wiring part 1 of AlXAu, etc. branches off to fine wirings 2, 3 with the surface covered with SiO2 or PSG5. The etching patterns 4 provided in square on the thick wiring part 1 can restrict the maximum stress generated on the protecting film less than breakdown strength. The patterns 4 are appropriately selected in numbers and size according to the thickness of the metallic film and the thickness and kinds of the surface protecting film. This constitution allows easy execution with effective reduction of cracks on the surface protecting film to improve the reliability of a device.

5. 发明专利

JPS5473576A SPIN COATING METHOD AND SPIN COATER 失效
公开(公告)号：JPS5473576A
公开(公告)日：1979-06-12
申请号：JP14136277
申请日：1977-11-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KONDOU SHIYUUJI , TSUJI KAZUHIKO
IPC分类号： G03C1/74 , B05C3/18 , B05C11/08 , B05D1/00 , B05D1/40 , G03F7/16 , H01L21/027 , H01L21/302
摘要： PURPOSE:To perform spin coating by placing a substrate to face downward and be opposed to the surface of coating solution and building up part of the coating solution surface to raised form and contacting the same to the substrate. CONSTITUTION:A substrate 101 with its surface to be coated being faced downward is secured to a rotary base 17 and a spindle 18 is slided to place the substrate in the position I near the photo resist solution surface 16. When a pressure gas is introduced into a chamber 13 and a diaphragm 14 is expanded, the liquid surface 16 builds up and deposits on approximately the entire surface of the substrate. Next, the chamber 13 is reduced of pressure to return the liquid surface to a normal position. The base 17 is then rotation-driven 701 and the base 17 is pulled up to the position II, whereby the resist coating film is formed on the substrate surface. The unsable gel form resist is separated and recovered into an enclosure bath 21 in this position, thus the majority of the resist is recovered into the chamber 12. Since the coating surface is facing downward, the dropping and deposition of the gel form particles on this surface do not occur and the homogeneous coating film may be obtained.

6. 发明专利

JPS5459078A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5459078A
公开(公告)日：1979-05-12
申请号：JP12613877
申请日：1977-10-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TSUJI KAZUHIKO , KONDOU SHIYUUJI , OOSONE TAKASHI , HORIUCHI SHIROU , IYORI MASAHARU , SHIRAGASAWA TSUYOSHI
IPC分类号： H01L29/78 , H01L21/28 , H01L21/768 , H01L29/43
摘要： PURPOSE:To eliminate the defect factor caused by the eutectic of Al and Si with no increment of the element area and the number of the manufacturing processes for IC. CONSTITUTION:An opening is provided to gate oxide film 13 on p-type Si substrate 11, and films 17-19 are formed selectively to cover gete electrode 20 and part of the opening via poly Si. The phosphorus diffusion is then applied on the entire surface, and thus N-layer 21 is formed with films 17-19 turned to high conductors. Remaining film 13 is removed using film 20 as the mask, and shallow layers 22-24 are formed through the phosphorus diffusion. Thus, deep layers 21a-21c are obtained. Then the surface is covered with low-temperature oxide film 25 with openings drilled selectively to form Al wirings 26-27. In such constitution, the wiring short circuit caused by the eutectic of Al and Si can be eliminated due to existence of poly Si, and a high density is ensured since no measurement margin is required around the connection between the wiring and the diffusion layer. In addition, the poly Si film can be formed simultaneously with formation of the gate electrode, thus decreasing the number of the manufacturing processes.

7. 发明专利

JPS60127737A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60127737A
公开(公告)日：1985-07-08
申请号：JP23577183
申请日：1983-12-14
申请人： NIPPON TELEGRAPH & TELEPHONE , MATSUSHITA ELECTRIC IND CO LTD
发明人： SANO KOUICHI , YAMAGUCHI TSUTOMU , NOYORI MASAHARU , KONDOU SHIYUUJI , WADA TETSUAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain a semiconductor device which has a low cost and high reliability by allowing a substrate formed with a wiring pattern to stand in a gas discharge atmosphere to form a modified layer on the surface of an electrode wiring pattern, thereby improving the corrosion resistance of metal electrode wirings. CONSTITUTION:After an electrode wiring pattern 1 is formed on a semiconductor substrate 1, the substrate is allowed to stand in a gas discharge atmosphere to form a modified layer 6 on the surface of the pattern 1, lead conductors are bonded onto the layer 6, at least part of the layer 6 is damaged at the bonding time, and the pattern 1 and the lead conductor are electrically connected. For example, a silicon oxide film 4 is formed on a silicon substrate 3, and the pattern 1 is formed thereon. Then, when a discharge is executed with oxygen used as the gas, a thin alumina film 6 is formed to include the side of the aluminum wiring pattern. Since this thin uniform alumina 6 is readily damaged by a mechanical impact at the wire bonding, the film 6 can be directly wire bonded without removing in advance.

8. 发明专利

JPS60124832A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60124832A
公开(公告)日：1985-07-03
申请号：JP23302583
申请日：1983-12-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAHIRO ISAMU , KONDOU SHIYUUJI
IPC分类号： H01L21/60
摘要： PURPOSE:To form a semiconductor element into thin layer easily with excellent yield and high density by a method wherein through holes are formed in a metallic substrate and a conductive layer is bonded to the main surface of the substrate and then semiconductor elements are connected to the leads at the edge of the conductive layer formed into conductive pattern by etching process. CONSTITUTION:It is recommended to form through holes 13 in a substrate 12 before anodic oxidation. Firstly a conductive layer 14 is bonded to the surface of the substrate 12 through the intermediary of an insulating layer 15. Secondly a photoresist film 16 is selectively formed on the conductive layer 14 to be etched utilizing the photoresist film 16 as a mask and leads 17 are formed on the insulating layer 15 on the through holes 13 simultaneously forming conductive pattern in other region. Bump electrodes 19 may be formed either on the semiconductor 18 side or on the leads 17 side. In such a case, the insulating layer 15 may protect the backside of the conductive layer 14 being etched while making alignment in case of bonding process easier.

9. 发明专利

JPS6086841A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6086841A
公开(公告)日：1985-05-16
申请号：JP19564583
申请日：1983-10-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KONDOU SHIYUUJI , KITAHIRO ISAMU , TAKAHASHI HIROSHI , HIRAI MINORU
IPC分类号： H01L21/60
摘要： PURPOSE:To save the waste of a material for an electrode bump, and to reduce cost by forming the electrode bump on a transparent substrate for forming a rectangular shape electrode and selectively transferring and forming the electrode bump to a semiconductor element chip on a semiconductor substrate. CONSTITUTION:An insulating film 13 is shaped on a semiconductor substrate 9, and electrode pads 11 and a surface protective film 15 are formed on the insulating film 13. A transparent conductive electrode 18 and an insulating film 19 are formed on a transparent substrate 16 for shaping electrodes, and electrode bumps 21 are formed to opening sections 20 in the insulating film 19. Au is used as the bumps 21. The bumps 21 and the pads 11 are positioned. The bumps 21 and the pads 11 are combined through pressing and the projection of heat-wave beams 22. The rectangular transparent conductive electrode 18 is placed and positioned onto the substrate 9. The substrate 9 is moved, beams 22 are projected when acceptable semiconductor chips 8 are conformed, and beams 22 are not projected when defective semiconductor chips 8' are conformed and the substrate 9 is shifted to the next position. Accordingly, the waste of a bump material can be conserved because the bumps are formed only to acceptables.

10. 发明专利

JPS5988863A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5988863A
公开(公告)日：1984-05-22
申请号：JP19920682
申请日：1982-11-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIRAGASAWA TSUYOSHI , KONDOU SHIYUUJI
IPC分类号： H01L25/18 , H01L21/60 , H01L25/065 , H01L25/07 , H01L27/00
摘要： PURPOSE:To contrive to make composite-multifunctional and speed up by a method wherein a desired electrode is directly connected by opposing the main surface of another LSI substrate to one LSI substrate, which are fixed to each other. CONSTITUTION:Functional elements are integrated on the main surface of the substrate 1 and covered with a protection film 2, a part of the film 2 is removed, and a bump electrode 3 is laid. Functional elements are integrated also on the main surface of the substrate 4, a protection film 5 and an electrode 6 are formed. The main surface of the substrate 4 is placed on the main surface of the substrate 1 in opposition thereto, and the solder plate electrodes 6 and 3 are heated and connected. If necessary, metallic lead wires 7 are connected simultaneously at the time of mutual connection of the electrodes. Epoxy resin 8 is applied on the side surface of the substrates and in gaps and solidified, resulting in adhesion. This constitution enables to make multifunctional to a high density by superposing LSI's without increasing the area of the substrate.

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