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    • 1. 发明专利
    • Aqueous resin emulsion
    • 水性树脂乳液
    • JP2006124425A
    • 2006-05-18
    • JP2004311108
    • 2004-10-26
    • Chukyo Yushi KkMaruzen Petrochem Co Ltd中京油脂株式会社丸善石油化学株式会社
    • ARIGA HIDEYAFUKUOKA TAKAHIROSAZUKA TAKUOKUDO MASAAKI
    • C08L79/08C08L67/00
    • PROBLEM TO BE SOLVED: To provide an aqueous resin emulsion which can form a resin excellent in heat resistance at a relatively low curing temperature and can be used as a modifier for a thermoplastic resin.
      SOLUTION: A resin solution comprising 150 g of methyl ethyl ketone and, dissolved therein, 72.5 g of bis[4-(allylbicyclo[2.2.1]hept-5-ene-2,3-dicarboxyimide)phenyl]methane and 72.5 g of bis(3-ethyl-5-methyl-4-maleimidephenyl)methane is prepared. Water in an amount of 375 cc is poured into a homomixer having a capacity of 1 liter, and 15 g of polyvinyl alcohol and 5 g of sodium dodecylbenzenesulfonate are successively added and dissolved with agitation and then the resin solution above is added with agitation. After uniformly agitated, the mixture is transferred to a pressure homogenizer and is emulsified. Subsequently, methyl ethyl ketone is distilled out under reduced pressure under heating to give the aqueous resin emulsion.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够在相对低的固化温度下形成耐热性优异的树脂的水性树脂乳液,并且可以用作热塑性树脂的改性剂。 解决方案:将包含150g甲基乙基酮并溶解在其中的树脂溶液72.5g,双[4-(烯丙基双环[2.2.1]庚-5-烯-2,3-二羧酰亚胺)苯基]甲烷和 制备72.5g双(3-乙基-5-甲基-4-马来酰亚胺基)甲烷。 将375cc的水倒入容量为1升的均质混合器中,连续加入15g聚乙烯醇和5g十二烷基苯磺酸钠,搅拌溶解,然后搅拌加入上述树脂溶液。 均匀搅拌后,将混合物转移到压力均化器中并乳化。 随后,在减压下加热下将甲基乙基酮蒸馏除去,得到水性树脂乳液。 版权所有(C)2006,JPO&NCIPI
    • 2. 发明专利
    • Copolymer for semiconductor lithography and its production method
    • 用于半导体光刻的共聚物及其生产方法
    • JP2008163319A
    • 2008-07-17
    • JP2007313125
    • 2007-12-04
    • Maruzen Petrochem Co Ltd丸善石油化学株式会社
    • YAMAGISHI TAKANORIKUDO MASAAKIYAMAGUCHI KENJI
    • C08F220/26C08F212/14G03F7/039H01L21/027
    • C08F2/06C08F12/24C08F212/14C08F220/14C08F220/18C08F220/28C08F220/32G03F7/0397
    • PROBLEM TO BE SOLVED: To provide a copolymer for semiconductor lithography which is used for forming such thin films for use in semiconductor lithography as a resist film, an antireflection film formed on the upper or under layer of the resist film, a gap-filling film and a topcoat film, is excellent in dissolvability in a solution of a thin film-forming composition, and is hard to develop fine particles such as a microgel and to cause a pattern defect; and to provide a method of stably producing the copolymer on a commercial scale. SOLUTION: The copolymer for semiconductor lithography comprises at least one repeating unit selected from among the repeating units (A) a repeating unit having a hydroxy group, (B) a repeating unit having a structure where a hydroxy group is protected with a group which suppresses dissolution in an alkaline developing solution and dissociates by the action of an acid, (C) a repeating unit having a lactone structure and (D) a repeating unit having a cyclic ether structure, wherein a propylene glycol monomethyl ether acetate solution containing the copolymer and having 15 mPa sec viscosity, exhibits ≥200 g/min/m 2 average velocity per filter area when passing the solution through a filter having 0.03 μm pore diameter for 60 minutes by 0.1 MPa pressure difference, and the method of producing the copolymer is also provided. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供用于形成用于半导体光刻的薄膜的半导体光刻用共聚物作为抗蚀剂膜,形成在抗蚀剂膜的上层或下层上的抗反射膜,间隙 填充膜和面涂膜在薄膜形成用组合物的溶液中的溶解性优异,难以显影微粒等细微粒子,导致图案缺陷; 并且提供以商业规模稳定地制备共聚物的方法。 解决方案:用于半导体光刻的共聚物包含至少一个选自重复单元(A),具有羟基的重复单元的重复单元,(B)具有羟基被保护的结构的重复单元 抑制在碱性显影液中的溶解并通过酸的作用解离的基团,(C)具有内酯结构的重复单元和(D)具有环状醚结构的重复单元,其中,含有丙二醇单甲醚乙酸酯溶液 该共聚物具有15mPa sec粘度,当将溶液通过具有0.03μm孔径的过滤器60分钟的0.1MPa压力差时,其每个过滤器面积的平均速度≥200g/ min / m 2 ,还提供了共聚物的制造方法。 版权所有(C)2008,JPO&INPIT
    • 3. 发明专利
    • Method of manufacturing copolymer for semiconductor lithography
    • 制备用于SEMICONDUCTOR LITHOGRAPHY的共聚物的方法
    • JP2010209338A
    • 2010-09-24
    • JP2010095217
    • 2010-04-16
    • Maruzen Petrochem Co Ltd丸善石油化学株式会社
    • OIKAWA SATORUOKADA TAKENORIKUDO MASAAKIYAMAGISHI TAKANORI
    • C08F220/10G03F7/039
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a copolymer for chemical amplification positive type semiconductor lithography, which has high developing contrast and excellent resolution in a fine pattern. SOLUTION: The method of manufacturing the copolymer, having at least a repeating unit (A) with a structure for protecting the group with alkali solubility with an acid-dissociable dissolution-inhibiting group, a repeating unit (B) with a lactone structure, and a repeating unit (C) having an alcoholic hydroxy group, includes the steps of: bringing at least one of monomers selected from those which give the repeating units (A), (B), and (C) into contact with water in a condition of being dissolved in an organic solvent to separate the liquid, or bringing the above monomer into contact with an ion exchange resin in a condition of being dissolved in the solvent; carrying out copolymerization to dissolve the copolymer obtained into a solvent; and carrying out neutralization titration with alkali metal hydroxide-containing solution using bromothymol blue as an indicator to obtain an acid value of 0.01 mmol/g or less. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种制造用于化学放大正型半导体光刻的共聚物的方法,其具有高显影对比度和优异的精细图案分辨率。 解决方案:制备共聚物的方法,至少具有用酸保护基团与酸解离的溶解抑制基团具有碱溶性的结构的重复单元(A),具有内酯的重复单元(B) 结构和具有醇羟基的重复单元(C)包括以下步骤:使选自产生重复单元(A),(B)和(C)的单体中的至少一种与水接触 在溶解在有机溶剂中以分离液体的条件下,或者使上述单体在溶解于溶剂中的条件下与离子交换树脂接触; 进行共聚以使得到的共聚物溶解到溶剂中; 并用溴百里酚蓝作为指标,用含碱金属氢氧化物的溶液进行中和滴定,得到0.01mmol / g以下的酸值。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Copolymer and composition for semiconductor lithography and method for producing the same copolymer
    • 用于半导体光刻的共聚物和组合物及其制备方法
    • JP2008106084A
    • 2008-05-08
    • JP2006287353
    • 2006-10-23
    • Maruzen Petrochem Co Ltd丸善石油化学株式会社
    • OIKAWA SATORUOKADA GOUGIKUDO MASAAKIYAMAGISHI TAKANORI
    • C08F220/10G03F7/039H01L21/027
    • G03F7/0397C08F220/18C08F220/28C08F2220/283G03F7/2041
    • PROBLEM TO BE SOLVED: To provide a copolymer for chemical amplifying positive type semiconductor lithography eliminating disadvantages in conventional techniques and having high developing contrast and excellent resolution performances of micro-patterns, to provide a composition for the semiconductor lithography comprising the copolymer and to provide a method for producing the copolymer.
      SOLUTION: The copolymer for the semiconductor lithography is a copolymer comprising at least a repeating unit (A) having a structure in which an alkali-soluble group is protected with an acid-dissociating dissolution suppressing group, a repeating unit (B) having a lactone structure and a repeating unit (C) having an alcoholic hydroxy group. The polymer has ≤0.01 mmol/g acid value determined by a method for dissolving the copolymer in a solvent and then carrying out neutralization titration with a solution containing an alkali metal hydroxide using Bromothymol Blue as an indicator.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种用于化学放大正型半导体光刻的共聚物,消除了常规技术中的缺点并且具有高显微镜对比度和优异的微图案分辨率性能,以提供用于半导体光刻的组合物,其包含共聚物和 以提供共聚物的制造方法。 解决方案:用于半导体光刻的共聚物是至少含有碱溶性基团被酸解离溶解抑制基团保护的结构的重复单元(A)的共聚物,重复单元(B) 具有内酯结构和具有醇羟基的重复单元(C)。 通过将共聚物溶解在溶剂中的方法测定聚合物的含量≤0.01mmol/ g,然后使用溴甲ol蓝作为指示剂,用含有碱金属氢氧化物的溶液进行中和滴定。 版权所有(C)2008,JPO&INPIT