专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000063196A PRODUCTION OF OXIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2000063196A
公开(公告)日：2000-02-29
申请号：JP23140598
申请日：1998-08-18
申请人： MURATA MANUFACTURING CO
发明人： KUMATORIDANI MAKOTO , SATO HIDETO , FUJII TAKASHI
IPC分类号： C30B15/22
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an oxide single crystal by Czochralski technique, so designed that the fluctuation of the intensity of the thermal radiation from a single crystal being in growth is measured with a thermosensor, and based on the result, a feedback control of single crystal growth environment is performed so as to diminish the above fluctuation to raise the yield of the aimed single crystal. SOLUTION: This method involves a system as follows: a single crystal growing oven 10 holds a thermal insulation cylinder 12 therefor, a noble metallic crucible 14 holding a stock melt therein is placed in the interior of the cylinder, and a heating coil 16 is set up around the crucible; a support bar 18 with a seed crystal attached to its lower end is set up above the crucible 14, while a load cell 20 is mounted on the opposite side; signals from the load cell 20 is inputted via a digital voltmeter 22 into a personal computer 24, which, in turn, is connected, via a set-point controller 26 and a high-frequency oscillator 28, to the heating coil 16; a peephole 30 is preferably provided on the upper part of the oven 10, and there is disposed a radiation thermometer 32 for a thermosensor 32 with which the temperature of a single crystal being in growth is measured.

2. 发明专利

JPH1092641A STATIC MAGNETIC-WAVE DEVICE 失效
公开(公告)号：JPH1092641A
公开(公告)日：1998-04-10
申请号：JP26784996
申请日：1996-09-17
申请人： MURATA MANUFACTURING CO
发明人： FUJINO MASARU , FUJII TAKASHI , KUMATORIDANI MAKOTO , SEKIJIMA YUUTOKU , TAKAGI HIROSHI
IPC分类号： H01F10/24 , H01P1/215 , H01P1/23 , H01P3/00
摘要： PROBLEM TO BE SOLVED: To provide a static magnetic-wave device having improved magnetic characteristics. SOLUTION: A static magnetic-wave device is constituted of a garnet film for static magnetic-wave grown on a Gd3 Ga5 O12 substrate, Sm3 Ga5 O12 substrate, or Nd3 Ga5 O12 substrate. The composition of the material of the garnet film is expressed by A3-x Bx Fe5-y-z Zry Cz O12-x/2+y/2+z/2 ' where A, B, and C respectively represent one or more kinds of elements selected from among Y, La, Bi, Gd, Lu, and Sc, one ore more kinds of elements selected out of Ca and Sr, and one or more kinds of elements selected out of Ga and Al and x, y, and z are numerical values meeting the relations of 0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式