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    • 3. 发明专利
    • PACKAGE
    • JPH0945759A
    • 1997-02-14
    • JP19379295
    • 1995-07-28
    • MITSUBISHI MATERIAL SILICONMITSUBISHI MATERIALS CORP
    • ENDO MITSUHIROMINAMI SHIYUUBINKIYONO YOSHIHIRO
    • B65D85/86F16J12/00F16J15/10H01L21/673H01L21/68H05K5/06
    • PROBLEM TO BE SOLVED: To improve the sealing quality of a package, by making its sealant pressing protrusions press in a line-contact manner the top and under surfaces of its salant with large pressing forces when mounting its upper cover portion on its main body portion. SOLUTION: On the top surface of a box-form main body portion, a flange 3 wherein a sealant storing groove 5 is formed in a closed loop manner is provided. On the under surface of an upper cover portion 2, a first sealant pressing protrusion 14 with an inversed chevron section is provided in a closed loop manner in the opposite position to the sealant storing groove 5 whereinto a closed-loop-form sealant 8 is inserted. On the bottom surface of the sealant storing groove 5 of the box-form main body portion, second sealant pressing protrusions 4a, 4b with chevron sections are provided in a closed loop manner. When the upper cover portion 2 is mounted on the flange 3, the first and second sealant pressing protrusions 14, 4a, 4b are contacted in a line- contact manner with the top and under surfaces of the sealant 8 in a closed loop manner. Hence, even when the pressing force of the upper cover portion 2 on the box-form main body portion is small, the good sealing quality of a package is obtained, and the upper cover portion 2 can be dismounted from the box-form main body portion by a small force.
    • 6. 发明专利
    • METHOD AND DEVICE FOR POLISHING SEMICONDUCTOR WAFER
    • JPH09174424A
    • 1997-07-08
    • JP33707695
    • 1995-12-25
    • MITSUBISHI MATERIAL SILICONMITSUBISHI MATERIALS CORP
    • MINAMI SHIYUUBIN
    • B24B37/005B24B37/08H01L21/304B24B37/04
    • PROBLEM TO BE SOLVED: To provide high flatness and parallelism by a method wherein when the two surfaces of a semiconductor wafer are polished by upper and lower surface plates, a relative speed and load distribution are uniformalized throughout the whole areas of the two surfaces. SOLUTION: A polishing device comprises a carrier 5 to hold a semiconductor wafer 6 in a horizontal state; upper and lower surface plates 2 and 3 brought into slide contact with the upper and under surfaces of the semiconductor wafer 6 and nipping the upper and under surfaces from above and below; a lap member 4 placed on the upper surface plate 2 so that the upper surface plate 2 is rendered relatively horizontally movable; and gear driving mechanisms 9, 10, 21, and 22 to reciprocate the upper and lower surface plates 2 and 3 at a uniformalized relative speed in a direction reverse to each other throughout the whole areas of the upper and the under surfaces of the semiconductor wafer 6. In such a way that the upper and lower surface plates 2 and 3 are linearly moved in a reverse direction to each other, the upper and the under surfaces of the semiconductor wafer 6 are polished at uniform speed distribution and bearing distribution throughout the whole areas of the upper and under surfaces thereof, and machining precision, such as flatness, is excellent.
    • 7. 发明专利
    • CHEMICAL LAP DEVICE FOR SEMICONDUCTOR WAFER
    • JPH09174418A
    • 1997-07-08
    • JP33707595
    • 1995-12-25
    • MITSUBISHI MATERIAL SILICONMITSUBISHI MATERIALS CORP
    • MINAMI SHIYUUBIN
    • B24B37/00B24B37/005B24B37/015H01L21/304
    • PROBLEM TO BE SOLVED: To provide a chemical lap device for a semiconductor wafer to reduce the processing allowance of a semiconductor wafer and further reduce the occurrence of a swell component and the occurrence of a warp. SOLUTION: A chemical lap device for a semiconductor wafer comprises a casing 1; and upper and lower surface plates 2 and 3 paralleling each other and arranged in the casing 1 and having at least opposite surfaces being a grinding surface formed of heat resistant resin. An alkaline solution in an amount higher than an amount enough to allow immersion of a semiconductor wafer is contained in the casing 1. Carriers 4a and 4b to hold the semiconductor wafer are moved in a horizontal plane relatively to the upper and lower surface plates 2 and 3, the upper and under surfaces of the semiconductor wafer are brought into contact with the upper and lower surface plates 2 and 3 with a low pressure to effect simultaneous polishing. An alkaline solution and a wafer surface are reacted to each other, chemical polishing is effected, and since elastic deformation of the semiconductor wafer is low, the occurrence of the swell component of the semiconductor wafer and the occurrence of the warp thereof are reduced, and the upper and under surface are finished in the same flatness as that of the surface plate.