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    • 5. 发明专利
    • LASER OSCILLATION EQUIPMENT CAPABLE OF CHANGING WAVELENGTH
    • JPH07170003A
    • 1995-07-04
    • JP31496793
    • 1993-12-15
    • MITSUBISHI HEAVY IND LTD
    • NODA SHOHEIKURODA MASAHIRO
    • H01S3/094H01S3/108
    • PURPOSE:To obtain a laser oscillation equipment which can stably continuously change output wavelength. CONSTITUTION:The equipment is provided width the following; an end mirror(EM)31 which reflects only the light in a specific frequency range, a nonlinear optical crystal 27 which is arranged on the input reflection optical axis of the EM31 and generates parametric light from supplied pumping light (LP), a grating (G)29 which can adjust the angle to the optical axis of output light to spectrally analyze the light outputted from the nonlinear optical crystal, and a total reflecting mirror 30 which totally reflects the specific light spectrally analyzed by the G29 toward the G29. Further the following are installed; a polarization prism 26 which is arranged between the EM31 and the nonlinear optical crystal, reflects the circularly poralized LP and makes it enter the nonlinear optical crystal, a conversion member 28 which is arranged between the G29 and the nonlinear optical crystal, turns the linearly polarized light into a circularly polarized light and turns the circularly polarized light into a linearly polarized light, and pumping wave supply means 21, 23, 24 capable of order selection which generates harmonics of desired order from the fundamental light from a laser oscillating means generating the fundamental light, and supplies the harmonics to a prism, as the LP of polarization characteristics which the polarization prism reflects.
    • 9. 发明专利
    • Temperature measuring instrument
    • 温度测量仪器
    • JPS61129540A
    • 1986-06-17
    • JP25140384
    • 1984-11-28
    • Mitsubishi Heavy Ind Ltd
    • NODA SHOHEIHORI JUNICHIRO
    • G01J5/08G01J5/04
    • G01J5/08G01J5/0044G01J5/041G01J5/046G01J5/048G01J5/0887G01J5/0893
    • PURPOSE:To obtain a measuring instrument which has excellent high-temp. strength and is strong to thermal impact by using silicon carbide ceramics to form the front end of a detecting cylinder and silicon nitride ceramics to form the rear end thereof. CONSTITUTION:The detecting cylinder consists of the front end 1A and rear end 1B as well as a socket 1C coupling both ends. The end 1A and socket 1C are formed of the silicon carbide ceramics having the excellent high-temp. strength and the end 1B is formed of the silicon nitride ceramics having the excellent thermal impact strength. Both ends are screwed to each other via the socket 1C and are reinforced by a heat-resistant adhesive agent 4. The closed front end 1A of the detecting cylinder constituted in the above-mentioned manner is inserted through the wall 2 of a furnace so as to be inserted to the central part of the furnace. The rear end 1B of the detecting cylinder is fixed to a flange 6 provided to the wall 2 and is inserted into the holes formed to the wall 2 and a heat insulating material 5 thereof. The end of the detecting cylinder projecting to the outside of the furnace is closed by a radiation thermometer 7.
    • 目的:获得具有优异高温度的测量仪器。 并且通过使用碳化硅陶瓷形成检测筒的前端和形成其后端的氮化硅陶瓷来强烈地对热冲击。 构成:检测气缸由前端1A和后端1B以及连接两端的插座1C组成。 端部1A和插座1C由具有优异的高温的碳化硅陶瓷形成。 并且端部1B由具有优异的热冲击强度的氮化硅陶瓷形成。 两端通过插座1C彼此拧紧,并通过耐热粘合剂4加强。以上述方式构成的检测气缸的封闭前端1A通过炉壁2插入,以便 被插入到炉的中心部分。 检测气缸的后端1B固定在设置在壁2上的凸缘6上,并被插入形成在壁2上的孔及其绝热材料5中。 突出于炉外的检测圆筒的端部由辐射温度计7封闭。
    • 10. 发明专利
    • Plasma treatment device, solar cell and manufacturing method of solar cell
    • 等离子体处理装置,太阳能电池和太阳能电池的制造方法
    • JP2006032800A
    • 2006-02-02
    • JP2004212167
    • 2004-07-20
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • WATANABE TOSHIYAYAMAKOSHI HIDEOSATAKE KOJISHIGENAKA TOSHIAKINAKANO YOJITAKEUCHI YOSHIAKINODA SHOHEI
    • H01L31/04C23C16/509C23F4/00H01L21/205H05H1/46
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To improve the film-forming quality of plasma treatment with respect to a substrate to be treated whose area is made large. SOLUTION: The plasma treatment device is provided with a chamber 10 where inner pressure can be adjusted, a substrate electrode 3 which is arranged in the chamber 10 to hold the substrate to be treated 11 and grounded, a counterelectrode 21 which is disposed in the chamber 10 to face the substrate electrode 11 by leaving an interval, receives the supply of high-frequency power 26 and discharges the power. Four supply points 24 are installed in the lengthwise direction of the counterelectrode 21. When the length L of a cable 25 supplying power to the supply points 24 is set to be L and a wavelength of high frequency power of the cable 25 which is decided by a frequency of the high frequency power supply 26 and a structure of the cable 25 is set to be λ, almost the same length shown by L=nλ/2 (n is positive integer and n≠0) is set. The four supply points 24 are divided into two power supply systems E1 and E2 different in phases. The phases of the adjacent supply points 24 are made to differ from each other. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提高等离子体处理相对于面积大的被处理基板的成膜质量。 解决方案:等离子体处理装置设置有可以调节内部压力的室10,布置在室10中以保持被处理基板11并接地的基板电极3,设置的反电极21 在室10中通过留下间隔面对基板电极11,接收高频电源26的供给并放电。 四个供应点24安装在反电极21的长度方向上。当向供应点24供电的电缆25的长度L被设置为L并且电缆25的高频功率的波长由 将高频电源26的频率和电缆25的结构设定为λ,设定与L =nλ/ 2(n为正整数,n≠0)所示的几乎相同的长度。 四个供给点24分成两个不同的供电系统E1和E2。 使相邻的供给点24的相位彼此不同。 版权所有(C)2006,JPO&NCIPI