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1. 发明专利

JP2013098337A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2013098337A
公开(公告)日：2013-05-20
申请号：JP2011239646
申请日：2011-10-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： NAKAO TEIKO , TAKEUCHI YOSHIAKI , OTSUBO EIICHIRO , KAWAI YOSHINOBU
IPC分类号： H01L21/205 , C23C16/509 , H01L31/04 , H05H1/46
CPC分类号： Y02E10/50 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable film production even on a base plate with a large area by uniformizing an electric field distribution and a plasma distribution.SOLUTION: A vacuum processing apparatus 1 has: a discharge chamber 2 composed of a ridge waveguide having ridge electrodes 21a, 21b and non-ridge electrodes 22a, 22b; converters 3A, 3B composed of a ridge waveguide having ridge parts 31a, 31b and non-ridge parts 32a, 32b; discharge means 9 for discharging gas inside the discharge chamber 2 and the converters 3A, 3B; mother gas supply means 10 for supplying mother gas between the ridge electrodes. In the case that ddefines a distance between confronting faces of the ridge electrodes 21a, 21b, adefines the width of the ridge waveguides of the discharge chamber 2 and the converters 3A, 3B, ldefines the length of the ridge waveguide of the discharge chamber 2, and λ defines a wavelength in vacuum of supplied high-frequency power, the vacuum processing apparatus 1 respectively satisfies the following expressions within the range of allowing fluctuation of ±2%: d=0.004λ, a=0.72λ, l=0.52λ.
摘要翻译：解决的问题：提供即使在大面积的基板上也可以通过使电场分布均匀化和等离子体分布来进行稳定的膜生产的真空处理装置。解决方案：真空处理设备1具有：排气室2，其由具有脊电极21a，21b和非脊电极22a，22b的脊波导构成; 由具有脊部31a，31b和非脊部32a，32b的脊状波导构成的转换器3A，3B; 用于排出放电室2内的气体和转换器3A，3B的排出装置9; 用于在脊电极之间供给母体气体的母体气体供给装置10。在d 1 定义脊电极21a，21b的相对面之间的距离的情况下， 0 放电室2的脊波导和转换器3A，3B，1 1 定义了放电室2的脊波导的长度，λ定义了真空中的波长提供高频电力时，真空处理装置1在允许±2％的波动的范围内分别满足以下表达式：d 1 =0.004λ，a 0 =0.72λ，l 1 =0.52λ。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JPH02170979A CHEMICAL VAPOR DEPOSITION DEVICE USING RESONANT PLASMA BY ELECTRON CYCLOTRON 失效
公开(公告)号：JPH02170979A
公开(公告)日：1990-07-02
申请号：JP32304988
申请日：1988-12-21
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , MURATA MASAYOSHI , TAKEUCHI YOSHIAKI , UCHIDA SATOSHI
IPC分类号： C23C16/50 , C23C16/27 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To cause reaction for forming a high-purity thin film at high velocity on a large-area base plate by providing a slit-fitting metallic cylinder in a high-vacuum or high-pressure closed space and housing one part of a vessel made of a dielectric in the inside of the slit-fitted metallic cylinder. CONSTITUTION:A microwave oscillator 1, a slit-fitted metallic cylinder 12, a plasma producing chamber 105 and a reaction vessel 15, etc., are provided to a chemical vapor deposition device using resonant plasma by electron. This slit-fitted metallic cylinder 12 is utilized for propagation of microwaves. Therein the slit-fitted metallic cylinder 12 is provided in a high-vacuum or high-pressure closed space formed of both a vessel 100 made of a dielectric and a vessel 101 made of nonmagnetic metal. The plasma producing chamber 105 is formed in such a shape that one part of the vessel 100 made of the dielectric is housed into the inside of the slit-fitted metallic cylinder 12. Thereby an insulating film made of SiO2 and a sputtering type film made of TaO2, etc., can be formed.

3. 发明专利

JP2548785B2 失效
公开(公告)号：JP2548785B2
公开(公告)日：1996-10-30
申请号：JP32304888
申请日：1988-12-21
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , TAKEUCHI YOSHIAKI , MURATA MASAYOSHI , UCHIDA SATOSHI
IPC分类号： C23C16/50 , C23C16/27 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31

4. 发明专利

JPH06299357A CHEMICAL VAPOR DEPOSITION DEVICE BY ELECTRON CYCLOTRON RESONANCE PLASMA 失效
公开(公告)号：JPH06299357A
公开(公告)日：1994-10-25
申请号：JP8854593
申请日：1993-04-15
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , KOJO DAIICHI , MURATA MASAYOSHI , TAKEUCHI YOSHIAKI , UDA KAZUTAKA
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01L21/31 , H05H1/46
摘要： PURPOSE:To generate high density plasma in a plasma forming chamber to perform high speed film forming or high speed etching by arranging a taper type plasma microwave introducing device between a waveguide and a Rigitano coil. CONSTITUTION:A taper type microwave introducing device 106 is arranged between a waveguide 102 connected to a microwave transmitter 100 and a Rigitano coil 316. The taper type microwave introducing device 106 is constituted of two parts and a space between the two is perpendicularly narrowed as they approach the Rigitano coil 316 and becomes the same as the width of a slit made in the Rigitano coil 316 at the jointing part with the Rigitano coil 316. The two parts of the taper type microwave introducing device 106 each are connected to the end of the Rigitano coil on both sides of the slit. Consequently, plasma electron density is made large and the vacuum in a plasma forming chamber is improved.

5. 发明专利

JP2548786B2 失效
公开(公告)号：JP2548786B2
公开(公告)日：1996-10-30
申请号：JP32304988
申请日：1988-12-21
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , MURATA MASAYOSHI , TAKEUCHI YOSHIAKI , UCHIDA SATOSHI
IPC分类号： C23C16/50 , C23C16/27 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31

6. 发明专利

JPH02170978A CHEMICAL VAPOR DEPOSITION DEVICE USING RESONANT PLASMA BY ELECTRON CYCLOTRON 失效
公开(公告)号：JPH02170978A
公开(公告)日：1990-07-02
申请号：JP32304888
申请日：1988-12-21
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , TAKEUCHI YOSHIAKI , MURATA MASAYOSHI , UCHIDA SATOSHI
IPC分类号： C23C16/50 , C23C16/27 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To cause reaction for forming a thin film having uniform thickness on a large-area base plate by generating a plasma flow by microwave discharge resulting from resonance of an electron cyclotron with slit-fitted metallic plate utilized thereto in which a microwave supplying terminal is provided to the center. CONSTITUTION:A chemical vapor deposition device using resonant plasma by an electron cyclotron is provided with a microwave oscillator 100 and a slit-fitted metallic plate 113. Plasma waves are generated by supplying microwaves to this metallic plate 113. Therein a microwave supplying point is provided to the center of the slit-fitted metallic plate 113. A plasma flow is generated by microwave discharge resulting from resonance of the electron cyclotron with the slit-fitted metallic plate 113 utilized thereto. Thereby plasma waves excellent in uniformity can be generated.

7. 发明专利

JPH0582449A ELECTRON CYCROTRON RESONANCE PLASMA CVD EQUIPMENT 失效
公开(公告)号：JPH0582449A
公开(公告)日：1993-04-02
申请号：JP24119591
申请日：1991-09-20
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , TAKEUCHI YOSHIAKI , MURATA MASAYOSHI
IPC分类号： C23C16/50 , C23C16/27 , C23C16/511 , G01N24/14 , G01R33/64 , H01L21/205 , H01L21/31 , H01L21/316 , H05H1/18
摘要： PURPOSE:To obtain an ECR plasma CVD equipment capable of forming a uniform thin film. CONSTITUTION:Microwaves generated by a microwave oscillator 100 is made to propagate in a waveguide 103 via a microwave branching filter 101, an isolator 102 and a stub tuner 107, and introduced into a cavity chamber 108. Said microwaves are supplied to metal plates 113 provided with slits in a plasma generating chamber 204, via a dipole antenna 109, coaxial cables 110, 112 and coaxial connectors 111, and generates plasma. Electron cycrotron resonance is induced by generating magnetic field with a magnetic coil 214. Thereby reaction gas is dissociated in a reaction chamber 208, and product is deposited. In the above electron cycrotron resonance plasma CVD equipment, the two metal plates 113 provided with slits are arranged so as to face each other in the plasma generating chamber and supplying points of microwaves to the two metal plates 113 provided with slits are arranged at diagonal positions.

8. 发明专利

JPS63316427A ECR PLASMA REACTION DEVICE 失效
公开(公告)号：JPS63316427A
公开(公告)日：1988-12-23
申请号：JP15260687
申请日：1987-06-19
申请人： MITSUBISHI HEAVY IND LTD
发明人： KAWAI YOSHINOBU , MURATA MASAYOSHI , YAMAMOTO TAKASHI , OGURO TAKASHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31 , H01L21/318
摘要： PURPOSE:To cause a reaction for the formation of a thin film on a large-area substrate at high speed by a method wherein a plasma stream is generated by a microwave discharge by electron cyclotron resonance using a metal cylinder equipped with a slit. CONSTITUTION:A microwave transmitted by a microwave transmitter 100 is taken out by a ball antenna 109 via a waveguide 102; it is propagated through a coaxial tube 110 and reaches a metal tube 113 equipped with a slit. A standing wave is formed on the slit; a plasma is generated by electron cyclotron resonance due to a magnetic field generated by a magnetic coil 214 surrounding the metal cylinder 113 equipped with the slit. During this process, the metal cylinder equipped with the slit is housed in a plasma generation chamber; this plasma generation chamber 204 is interlinked with a reaction container 208; accordingly, the generated plasma can be taken out in the reaction container 208. The inside of the reaction container is evacuated by using an evacuation device; at the same time, a prescribed gas is supplied by a gas supply device; an ECR (electron cyclotron resonance) plasma reaction is caused. By this setup, it is possible to form a large-area film of high quality at high speed.

9. 发明专利

JP2011035327A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2011035327A
公开(公告)日：2011-02-17
申请号：JP2009182773
申请日：2009-08-05
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： KAWAI YOSHINOBU , TAKEUCHI YOSHIAKI , IYOMASA ATSUHIRO , NISHIMIYA TATSUYUKI , MASHIMA HIROSHI , BABA TOMOYOSHI , NAKAO TEIKO , YAMAUCHI YASUHIRO
IPC分类号： H01L21/31 , C23C16/24 , C23C16/505 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of uniformly forming a large-area film of high quality by performing efficient energy transmission to a plasma generation region and uniform distribution of electric field density.
SOLUTION: The vacuum processing apparatus is provided with: a discharge chamber 2 composed of a ridge waveguide having ridge electrodes 21, 21, as ridge parts for discharge, which are arranged to face each other and between which a substrate to be subjected to plasma processing is disposed; a power source 5 configured to supply high-frequency electric power to the discharge chamber 2; a coaxial line 4A composed of an inner conductor 41 and an outer conductor 42 and guiding the high-frequency electric power from the power source 5 to the discharge chamber 2; and a conversion unit 3A composed of a ridge waveguide having ridge parts 31, 31, arranged adjacently in a direction L wherein the discharge chamber 2 extends, and guiding the high-frequency electric power from the coaxial line 4A to the discharge chamber 2. One of the ridge parts 31, 31 is electrically connected to the inner conductor 41, and the other one of the ridge parts 31, 31 is electrically connected to the outer conductor 42.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过对等离子体产生区域进行有效的能量传递和电场密度的均匀分布来均匀地形成高质量的大面积膜的真空处理装置。解决方案：真空处理装置设置有：排出室2，其由具有脊电极21,21的脊状波导构成，作为用于放电的脊部，其布置成彼此面对，并且其间将被施加处理等离子体处理; 配置为向排出室2供给高频电力的电源5; 由内导体41和外导体42构成的同轴线4A，将高频电力从电源5引导到放电室2; 以及转换单元3A，其由具有脊部31,31的脊状波导构成，脊部31,31沿排列室2延伸的方向L相邻配置，并将高频电力从同轴线4A引导到排出室2.一个脊部31,31与内导体41电连接，脊部31,31中的另一个电连接到外导体42.版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2004266038A Surface treatment device and method therefor 有权
公开(公告)号：JP2004266038A
公开(公告)日：2004-09-24
申请号：JP2003053680
申请日：2003-02-28
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： KAWAI YOSHINOBU , MURATA MASAYOSHI , BABA TOMOYOSHI , YAMADA AKIRA , TAKATSUKA HIROSHI , YAMAUCHI YASUHIRO , TAKEUCHI YOSHIAKI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23F4/00 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment device and a surface treatment method which permit a uniform surface treatment for a substrate by uniformly producing plasma between a non-grounded electrode and a grounded electrode even for a big area substrate exceeding 1m×1m. SOLUTION: The surface treatment device 70 for treating the surface of the substrate W arranged in a vacuum vessel 1 utilizing plasma is constituted of a pair of electrodes 2, 4 arranged in the vacuum vessel 1 so as to be opposed, cables 34a, 34b for supplying electric power to the pair of electrodes 2, 4 respectively and supply points 10a, 10b installed respectively in the pair of electrodes 2, 4 to receive the supply of power from the cables 34a, 34b while the phase difference of voltage between the powers supplied to the pair of electrodes 2, 4 is specified as 180°. COPYRIGHT: (C)2004,JPO&NCIPI

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