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1. 发明专利

JPH0584673B2 失效
公开(公告)号：JPH0584673B2
公开(公告)日：1993-12-02
申请号：JP28463085
申请日：1985-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA MASAYUKI , SATO SHINICHI , TOKUI AKIRA , KAWAI AKIRA , NAGATOMO MASAO , OZAKI KOJI
IPC分类号： H01L27/10 , G11C11/34 , H01L21/8242 , H01L27/108

2. 发明专利

JPH05129518A LAMINATED SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH05129518A
公开(公告)日：1993-05-25
申请号：JP28839591
申请日：1991-11-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： INOUE YASUAKI , TOKUI AKIRA , NAKANO YUTAKA
IPC分类号： H01L21/20 , H01L21/02 , H01L21/768 , H01L23/522 , H01L27/00 , H01L27/12 , H01S3/00
摘要： PURPOSE:To provide a laminated semiconductor integrated circuit whose electric characteristic is good and stable. CONSTITUTION:A stripe-shaped shield layer 11 which is parallel to an antireflection film and whose pitch is equal are formed on an interlayer insulating layer 2b; the central position in the pitch direction of individual stripes 11a in the shield layer 11 is made to coincide with the central position in the pitch direction of individual spaces in the antireflection film; and wiring 9a which connects devices in the upper part and the lower part is passed through a space 11b in the shield layer 11. The individual stripes in the shield layer 11 are connected to fixed potential parts on the devices in the upper part and the lower part. Thereby, it is possible to prevent a cross talk between the devices which are adjacent in the upper part and the lower part, the devices can satisfactorily and electrically be connected, a high-quality SOI layer can be formed and the quantity of wiring can be reduced.

3. 发明专利

JPH04308850A PHASE SHIFT MASK 失效
公开(公告)号：JPH04308850A
公开(公告)日：1992-10-30
申请号：JP10193291
申请日：1991-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARIA OPU DE BETSUKU , TOKUI AKIRA
IPC分类号： G03F1/29 , G03F1/68 , H01L21/027
摘要： PURPOSE:To improve the throughput by providing a nearly square main opening part which has corner expanded parts at four corners at the center part of a mask main body and providing phase shift parts near by the sides. CONSTITUTION:The main opening part 13 is formed at the center part of the square mask main body plate 11, the phase shift parts 12 are provided at specific intervals from the four sides of the main opening part 13, and the corner extended parts 13a are formed at the respective corner parts. In this case, phase shift light which is made incident through the phase shift parts 12 is opposite in phase from light passed through the main opening part 13. Here, the amplitude of the phase shift light should be subtracted from the amplitude of the light passed through the main opening part 13. Consequently, the amplitude profile of exposure light obtained through the mask 10 has a steep gradient and reaches a higher maximum value.

4. 发明专利

JPH0460640A FORMATION OF FINE PATTERN 失效
公开(公告)号：JPH0460640A
公开(公告)日：1992-02-26
申请号：JP17318690
申请日：1990-06-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUI AKIRA
IPC分类号： G03F7/38 , H01L21/027
摘要： PURPOSE:To improve rectangularity by exposing a photosensitive resin film applied on a substrate to a halogen under a reduced pressure before exposing in the case of a negative type and after the exposing in the case of a positive type, then heating the resin film. CONSTITUTION:The resist film 2a is exposed to the gaseous halogen 9 before the exposing in the case of the negative type resist. The resist 2a is heated after the exposing by which the gaseous halogen is adsorbed on the resist sur face. The adsorbed halogen degrades the solubility of the resist 2a in a devel oper. Further, radicals 7 are formed by photoirradiation. These radicals are diffused into the resist by heating and the solubility of the resist 2a changes in the depth direction of the resist. With the positive resist, the resist is subjected to the gaseous halogen treatment after exposing and is heated, by which the halogen is adsorbed to the resist surface and the adsorbed halogen degrades the solubility of the resist in the developer, by which the difference in the dissolving rate between exposed parts and unexposed parts is increased. The resist profile having the good rectangularity is obtd. in this way.

5. 发明专利

JPH036566A PATTERN FORMING METHOD BY EXCIMER LASER 失效
公开(公告)号：JPH036566A
公开(公告)日：1991-01-14
申请号：JP14176589
申请日：1989-06-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUKUI AKIYOSHI , TOKUI AKIRA
IPC分类号： G03F7/038 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/22 , H01L21/266
摘要： PURPOSE:To obtain a rectangular and good pattern profile by selectively silylating the surface layer part of a novolak resin film and subjecting the silylated parts to a dry developing by oxygen plasma, thereby forming patterns. CONSTITUTION:The novolak resin 2 applied on a substrate 1 is selectively irradiated with an excimer beam 3 and is then subjected to the silylating treatment by which the novolak resin is selectively silylated. The silylated resin is subjected to the dry developing by the oxygen plasma 14 etching to form the resist patterns. The silylated regions 9 are, therefore, formed with SiO2 15 by the plasma and are not etched, but exposed regions 5 are not silylated and are consequently etched by the oxygen plasma. The rectangular and good patterns are formed.

6. 发明专利

JPH0265230A PLASMA REACTOR 失效
公开(公告)号：JPH0265230A
公开(公告)日：1990-03-05
申请号：JP21762588
申请日：1988-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUI AKIRA
IPC分类号： C23F1/08 , G03F7/20 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To cancel the asymmetry of etching shape of a specimen thereby enhancing the perpendicularity and in-surface evenness by a method wherein a plasma shielding sheet with an opening is provided on the upper part of a specimen base with a scanning mechanism to shift the specimen during etching process. CONSTITUTION:A specimen 8 shifted by a specimen holding base 11 with a scanning mechanism is continuously reciprocated in a convergence magnetic field so that the incident angles reaching along the divergence magnetic field may be continuously changed corresponding to the positions of the specimen base 11. In such a state, the etching process is carried on. Furthermore, an opening 10 on the upper part of the specimen base 11 fills the role of cutting plasma carried by a divergence line of magnetic force distant from a central axis to remove the plasma reaching the specimen 8 especially losing the perpendicularity to the surface. Through these procedures, the processing shape of the processed thin films 13 on a substrate 12 can be made almost perpendicular further enhancing the evenness of the processing shape on the surface of the substrate 12.

7. 发明专利

JPH0249428A METHOD AND APPARATUS FOR FORMING THIN FILM ON SURFACE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0249428A
公开(公告)日：1990-02-19
申请号：JP31581088
申请日：1988-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： IWASAKI MASANOBU , ITO HIROMI , TOKUI AKIRA , MITSUI KATSUKICHI , TSUKAMOTO KATSUHIRO
IPC分类号： H01L21/302 , C23C14/34 , C23F4/00 , H01L21/304 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To form a thin film of high quality on a clean surface by a method wherein a natural oxide film adhered on the surface of a semiconductor substrate is removed by a photochemical reaction under heating and thereafter, successively, a thin film is formed on the substrate surface without being exposed to the atmosphere in a chamber for thin film formation use. CONSTITUTION:HCl gas is introduced in a chamber 3 through an HCl gas introducing port 6 and the HCl gas is fed to the surface of an Si substrate 4. Then, a low-pressure mercury-arc lamp is lighted, whereby with ultraviolet light irradiated on the surface of the substrate 4 through an ultraviolet light incident window 2, the substrate 4 is heated at 200-700 deg.C. Whereupon, a natural oxide film adhered on the substrate 4 is removed by a synergistic effect of light and heat. Then, the HCl gas is exhausted through an exhaust vent 9. Then, a heating means 5a is actuated to heat the semiconductor substrate 4, gas for film formation use is introduced through a gas introducing port 36 for film formation use and a prescribed thin film is formed on the surface of the substrate 4.

8. 发明专利

JPS62269351A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62269351A
公开(公告)日：1987-11-21
申请号：JP11330786
申请日：1986-05-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUI AKIRA
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To favorably form an impurity region on the inner surface of a trench groove by a method wherein a substance film having the same conductivity type as that of a substrate is epitaxially grown on the side surface part and base part of the trench groove which is grooved in the substrate and moreover, the impurity region is formed. CONSTITUTION:A field oxide film 12 is formed on an Si semiconductor substrate 11, an etching mask 14 is formed on the surface of an active region, an opening is selectively provided and a trench groove 15 is formed as a master. Then, a semiconductor film 13a having the same conductivity type as that of the substrate is formed on each surface of the groove 15 by an epitaxial method, the mask 14 is removed and an impurity region 13b having the other conductivity type to that of the substrate 11 is formed on the active region and the inner surface of the groove 15. Then, an insulating film 16 is formed including part of the active region and the impurity region 13b and a gate insulating film 18 is selectively formed, a poly Si film 17 is formed on the Si oxide film 16, a poly Si film 19 is formed on the gate oxide film 18 and furthermore, impurity regions 13c and 13d having the other conductivity type to that of the substrate are formed holding the gate insulating film 18 between them and one side of them is connected to the impurity region 13b.

9. 发明专利

JPH09180981A ANTI-REFLECTION FILM, FORMING METHOD THEREOF, AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09180981A
公开(公告)日：1997-07-11
申请号：JP33353795
申请日：1995-12-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUI AKIRA
IPC分类号： H01L21/205 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an anti-reflection film structure which hardly scatters light rays even if they are short in wavelength. SOLUTION: A gate insulating film 8 is formed on a substrate 1, an amorphous silicon film 9 is formed on the gate insulating film 8 through a CVD method using SiH4 as material gas, then NH3 gas is added to SiH4 , and a nitrogen-doped amorphous silicon film is formed to serve as an anti-reflection film 10. At this point, NH3 gas is controlled in flow rate so as to make the anti-reflection film 10 lower than 10% in reflectance. Then, a resist film 11 is formed and then irradiated with light for exposure. At this point, as the reflectance of the anti-reflection film 10 is set lower than 10% in reflectance, the resist film 11 is turned into a resist pattern 15 of a prescribed shape by development.

10. 发明专利

JPH07302845A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07302845A
公开(公告)日：1995-11-14
申请号：JP9431694
申请日：1994-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUI AKIRA
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To increase the capacity of a capacitor without increasing the number of-processes. CONSTITUTION:A conductive layer is formed on a substrate 14 whereupon transistors 24 and 25 are formed, a second resist pattern provided with a rugged topmost plane is formed and a storage node electrode 38 is formed by etching the conductive layer using the second resist pattern as a mask. Then, a dielectric film 39 and a plate electrode 40 are successively formed on the electrode 38 to constitute a capacitor 41.

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