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1. 发明专利

JPH09102541A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09102541A
公开(公告)日：1997-04-15
申请号：JP25852395
申请日：1995-10-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a second conductive layer formed above an insulating layer is buried in an improved state in a connecting hole formed through the insulating layer to electrically connect the second conductive layer to a first conductive layer formed under the insulating layer. SOLUTION: After a first conductor 2 and an insulating layer 3 are successively formed on a semiconductor element 1 and an insulating layer 3 is formed on the conductor 2, a connecting hole 4 having an opening angle θ of 85-100 deg. is formed through the insulation layer 3 and a barrier layer 5 is formed on the surface of the insulating layer 3 and on the bottom 4b of the hole 4. Then, after a second conductive layer 6 is formed on the barrier layer 5 so as to cover the hole 4, the hole 4 is filled with the layer 6 by applying a high pressure to the layer 6 while the layer 6 is heated to a high temperature and a reflection preventing film 9 is formed on the layer 6.

2. 发明专利

JPH0629405A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0629405A
公开(公告)日：1994-02-04
申请号：JP20731892
申请日：1992-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/90
摘要： PURPOSE:To fabricate a semiconductor device so that a connecting hole section of the semiconductor device can be buried in an Al metallic film and so that a highly accurate photolithographic overlaying can be realized. CONSTITUTION:After a high temperature sputtering method or a bias sputtering method at a substrate heating temperature of 400-600 deg.C or at lower than 300 deg.C is applied to Al metal to fabriacte an Al metallic film 6 on the surface of the substrate of a semiconductor device including a connecting hole of the semiconductor device, the Al metallic film 6 is heated again at 400-600 deg.C for reflow to form the Al metallic film 6, followed by forming an Al metallic film 7 for the second step at a substrate heating temperature of lower than 200 deg.C. Since the aforementioned processing can make the grain size of the metallic film formed on the upermost layer smaller, the surface homology of the metallic film can be enhanced, light scattering in the alignment mark section can be prevented, and the accuracy of photolithographic overlaying can be enhanced.

3. 发明专利

JPH04110464A FILM FORMING DEVICE 失效
公开(公告)号：JPH04110464A
公开(公告)日：1992-04-10
申请号：JP23112290
申请日：1990-08-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： C23C14/36 , C23C14/35 , H01L21/203
摘要： PURPOSE:To prolong the service life of a target, and to improve coverage on the film forming surface by using a means for generating simple harmonic oscillation in the radial direction besides rotation in place of a means for rotating the magnets on the rear of the targets on the same axis with respect to a substrate. CONSTITUTION:A magnet 14 is provided on the arranging part 13 on the rear of the targets 12 arranged on the same axis and opposed to a semiconductor substrate 11 to be coated with a film. The magnet is rotated on a specified concentric circle by a rotating and oscillating means 15 and simultaneously oscillated in the radial direction. Consequently, the area of the target 12 to be sputtered is uniformized as far as possible, only the specified part is not excessively sputtered, the service life of the target 12 is prolonged, the directional distribution of the charged particles is uniformized, and the coverage of the film forming surface is improved.

4. 发明专利

JP2001203204A METHOD OF MANUFACTURING FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001203204A
公开(公告)日：2001-07-27
申请号：JP2000010945
申请日：2000-01-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAGI KIMIO , MAEKAWA KAZUYOSHI , SEKIGUCHI NOBORU
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the surface irregularities can be reduced and the surface be kept flat and smooth, when forming an Al film as a wiring layer. SOLUTION: In this method for manufacturing a semiconductor device, an aluminum film is formed at a high temperature, which is cooled at a cooling speed of 10 deg.C/sec or less until its temperature becomes within a range of 230 to 400 deg.C, and then a laminated film made of a titanium film and a titanium nitride is formed thereon.

5. 发明专利

JPH08204007A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH08204007A
公开(公告)日：1996-08-09
申请号：JP1161095
申请日：1995-01-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE: To stabilize electrical characteristics between wirings in a connecting hole part by forming the first conductive film, the first connecting film, and an antireflection film, in this order, and also forming an inter-layer insulating film and a specific connecting hole, and further the second connecting film and the second conductive film. CONSTITUTION: On an Si substrate 1, the first conductive film 2 containing Al, the first connecting film 14 consisting of a titanium or tungsten film, and a P-SiN film 15 acting as an antireflection film, are formed in this order. Then, in order for covering the P-SiN film 15, an inter-layer insulating film 16 which is provided with etching characteristics different from that of the P-SiN film 15 is formed. Then, till reaching the first connecting film 14, a connecting hole 17 is formed through the inter-layer insulating film 16 and the P-SiN film 15. To obtain contact with the first connecting film 14 with the connecting hole 17 in between, the second connecting film 18 and, on which, the second conductive film 19 are formed. By this, a connecting part between the first and second connecting films 14 and 18 is activated, and electrically stable connection between the first and second conductive films 2 and 19 is established.

6. 发明专利

JPH07283168A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07283168A
公开(公告)日：1995-10-27
申请号：JP7724694
申请日：1994-04-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUTSUMI TOSHIAKI , MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , H01L21/324 , H01L21/336 , H01L21/768 , H01L23/522 , H01L29/78
摘要： PURPOSE:To enable a semiconductor device of salicide structure where a junction is protected against damage to be easily manufactured. CONSTITUTION:In a salicide process in the manufacture of a semiconductor device, a Co-rich metal silicide film 9 is formed on an exposed silicon part through a first thermal treatment after a Co film is formed, then a Co film 9 left unreacted is removed, and a second thermal treatment is carried out in an SiH4 atmosphere 13 so as to form an Si-rich metal silicide layer 14.

7. 发明专利

JP2003017440A Contact structure, contact formation method, semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：接触结构，接触形成方法，半导体器件和半导体器件的制造方法
公开(公告)号：JP2003017440A
公开(公告)日：2003-01-17
申请号：JP2001203919
申请日：2001-07-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEKAWA KAZUYOSHI , SUGATA YASUHIRO
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/522 , H01L29/45
CPC分类号： H01L21/28518 , H01L29/456
摘要： PROBLEM TO BE SOLVED: To obtain a stable contact structure where the resistance rises only slightly, even if it is subjected to heating treatment at a high temperature. SOLUTION: In a contact structure having a substrate with a silicon part, an insulation layer which is formed on the substrate and where a connection hole attaining to the silicon part is formed, a barrier layer, formed at least in an inner surface of a connection hole and a conductive member buried in an inside of a barrier layer, a ternary system metal silicide, is further formed between an Si substrate and a barrier layer.
摘要翻译：要解决的问题：即使在高温下进行加热处理，为了获得电阻上升的稳定的接触结构。解决方案：在具有硅部分的基板的接触结构中，形成在基板上并且连接到达到硅部分的连接孔的绝缘层至少形成在连接的内表面中的阻挡层在Si衬底和阻挡层之间进一步形成掩埋在阻挡层内部的导电构件，三元系金属硅化物。

8. 发明专利

JP2000068230A SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURE OF THE DEVICE AND MANUFACTURE OF THE DEVICE 失效
公开(公告)号：JP2000068230A
公开(公告)日：2000-03-03
申请号：JP23919098
申请日：1998-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： IZUMITANI JUNKO , MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , C23C14/02 , C23C14/54 , H01L21/00 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To improve the coverage of a metallic film, and to prevent the generation of reaction products between metallic films by cooling a semiconductor substrate before the film formation of the metallic film is started in a manufacturing device suitable for manufacturing a semiconductor device equipped with a metallic film in a prescribed area. SOLUTION: This is a device for manufacturing a semiconductor device for forming a metallic film in a film forming region, including the inside part of a hole provided at a semiconductor substrate. This device is provided with a degassing chamber 34 for heating the semiconductor substrate up to the degassing temperature, and subjecting the substrate to degassing, a film forming chamber 40 for forming a metal film in the film forming region in a state in which the semiconductor substrate is heated to a film formation temperature, and cooling chamber 38 for cooling the temperature of the semiconductor substrate to a cooling temperature in the range of-50 deg.C to 150 deg.C, which is lower than the film formation temperature.

9. 发明专利

JPH05206063A SPUTTERING DEVICE FOR FORMATION OF LAMINATED WIRING 失效
公开(公告)号：JPH05206063A
公开(公告)日：1993-08-13
申请号：JP1287392
申请日：1992-01-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/203 , H01L21/285 , H01L21/3205
摘要： PURPOSE:To improve throughput and suppress the refining of a natural oxide film by connecting an after-treatment chamber for a semiconductor wafer to a transfer device through an airtight passage. CONSTITUTION:An after-treatment chamber to apply after treatment to the surface of the metal of a semiconductor wafer is connected to a transfer chamber 4 through an airtight passage. Hereby, the transfer of a semiconductor wafer is performed between a sputter chamber 5 and the after-treatment chamber 11 through the transfer chamber 4. Accordingly, when forming laminated wiring, the semiconductor wafer ceases to be carried to outside of a device, and the film growth process can be performed in vacuum continuous treatment. Therefore, the throughput improves, and also the semiconductor wafer ceases to be exposed to air, and the interface control high in controllability and reproducibility becomes possible.

10. 发明专利

JP2003324108A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2003324108A
公开(公告)日：2003-11-14
申请号：JP2002125948
申请日：2002-04-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3065 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/78
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76802
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device excellent in electric characteristic by preventing natural oxide films removed by etching therefrom from adhering again to its sidewalls, etc. SOLUTION: In the manufacturing method, plasma etching is performed by using the mixing gas of an argon gas with one or more kinds of fluorine- based gases selected from a group comprising a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas, and a sulfur hexafluoride gas. Consequently, natural oxide films 5 existent on the surfaces of a silicon substrate 1 and gate electrodes 3 are removed therefrom. Thereafter, metal silicide films are formed on the silicon substrate 1 and the gate electrodes 3. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过防止通过其蚀刻除去的自然氧化物膜再次粘附到其侧壁等来提供电特性优异的半导体器件的制造方法。解决方案：在制造方法中，等离子体通过使用氩气的混合气体与选自三氟化氮气体，氟化氢气体，二
元六氟化碳气体，四氟化碳气体和硫的一种或多种氟系气体进行蚀刻六氟化碳气体。因此，在硅衬底1的表面上存在自然氧化物膜5，并从中去除栅电极3。此后，在硅衬底1和栅电极3上形成金属硅化物膜。版权所有（C）2004，JPO

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