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1. 发明专利

JP2002198421A SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CONTACT STRUCTURE, AND METHOD OF FORMING THE SAME 失效
公开(公告)号：JP2002198421A
公开(公告)日：2002-07-12
申请号：JP2000393077
申请日：2000-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEWAKA HIROMOTO , KAMOSHIMA TAKAO , IZUMITANI JUNKO
IPC分类号： H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can be decreased in contact resistance and high in reliability by increasing a contact surface area between a conductor layer and a conductive member, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a cell plate layer 5 formed in an insulating films 10 and 11 on a semiconductor substrate 4, a connection hole 12 formed as passed through the insulating films 10 and 11 and the cell plate layer 5, and a conductor plug 7A formed to expose the periphery, e.g. upper surface of the layer 5 contacted with the connection hole 12 and so that a conductor is filled in the connection hole 12.

2. 发明专利

JP2001015508A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2001015508A
公开(公告)日：2001-01-19
申请号：JP18146999
申请日：1999-06-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： IZUMITANI JUNKO
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To securely fill a groove with a conductive material, improve a yield of wiring formation step and reduce a cost by making a distance between side walls regulating a recessed part to be larger as they are far from a semiconductor substrate and filling the recessed part with a conductive layer. SOLUTION: An insulation layer 2 is formed on the main surface 1a of a silicon substrate 1, and another insulation layer 3 is formed thereon. A groove 3a extending in one direction is formed as a recessed part in the insulation layer 3, and it is regulated by a side wall 3c and a distance between the side walls 3c is made larger as they are far from the silicon substrate 1, especially, when they are close to the top surface 3b of the insulation layer 3, the distance therebetween becomes significantly large and a round part 3d forming a curved surface is formed on the side wall 3c near the top surface 3b. A conductive layer 7 is formed as to be filled in the groove 3a. Thus, the improved yield and reduction of cost can be realized in a wiring formation step and a semiconductor device provided with a highly reliable wiring be also obtained.

3. 发明专利

JP2003163214A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003163214A
公开(公告)日：2003-06-06
申请号：JP2001359808
申请日：2001-11-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEWAKA HIROMOTO , FUJIKI AKIMASA , IZUMITANI JUNKO
IPC分类号： H01L21/3205 , H01L21/304 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability and high production efficiency capable of surely and simply flattening an irregular face by subsequent CMP treatment even when the irregular face is produced on an insulating inter-layer film before the CMP treatment and its manufacturing method. SOLUTION: The manufacturing method of the semiconductor device provided with a CMP treatment process for performing CMP treatment on the insulating inter-layer film 8 is provided with a process for forming an erosion induction part N producing erosion during a CMP treatment process on an area corresponding to a projection face M out of the irregular face formed on the insulating inter-layer film 8 before the CMP treatment process. COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2000068230A SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURE OF THE DEVICE AND MANUFACTURE OF THE DEVICE 失效
公开(公告)号：JP2000068230A
公开(公告)日：2000-03-03
申请号：JP23919098
申请日：1998-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： IZUMITANI JUNKO , MAEKAWA KAZUYOSHI
IPC分类号： H01L21/28 , C23C14/02 , C23C14/54 , H01L21/00 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To improve the coverage of a metallic film, and to prevent the generation of reaction products between metallic films by cooling a semiconductor substrate before the film formation of the metallic film is started in a manufacturing device suitable for manufacturing a semiconductor device equipped with a metallic film in a prescribed area. SOLUTION: This is a device for manufacturing a semiconductor device for forming a metallic film in a film forming region, including the inside part of a hole provided at a semiconductor substrate. This device is provided with a degassing chamber 34 for heating the semiconductor substrate up to the degassing temperature, and subjecting the substrate to degassing, a film forming chamber 40 for forming a metal film in the film forming region in a state in which the semiconductor substrate is heated to a film formation temperature, and cooling chamber 38 for cooling the temperature of the semiconductor substrate to a cooling temperature in the range of-50 deg.C to 150 deg.C, which is lower than the film formation temperature.

5. 发明专利

JPH09199551A INSPECTION DATA ANALYZING/PROCESSING SYSTEM FOR INLINE INSPECTION 失效
公开(公告)号：JPH09199551A
公开(公告)日：1997-07-31
申请号：JP422796
申请日：1996-01-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI YOKO , HATTORI NOBUMI , IZUMITANI JUNKO , IKENO MASAHIKO
IPC分类号： H01L21/66 , G01R31/01 , G01R31/28
摘要： PROBLEM TO BE SOLVED: To increase a product yield and enhance a product quality by an ordinary user which can easily know a problem occurred step in a semiconductor fabrication process. SOLUTION: In an inline inspection step, a CPU 3 causes a data signal V1 taken by an inspection device body 1 to be stored in a memory 2 and also causes a result V6 obtained in the previous step to be read out from a memory 6 and stored in the memory 2. The CPU 3 reads out a storage data signal V2 from the memory 2, compares or collates detection fault data in the step with the result V6, and generates a data analyzed result V5 on the step. The result V5 comprises disappear fault data, common fault data, and restoration fault data. The CPU 3 executes the above operations for each inline inspection step, and prepares histogram data indicative of the number of detected faults and the number of disappeared faults in each step.

6. 发明专利

JP2003124442A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003124442A
公开(公告)日：2003-04-25
申请号：JP2001310885
申请日：2001-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMASHITA TAKASHI , IZUMITANI JUNKO , TAKADA YOSHIFUMI
IPC分类号： H01L21/8247 , H01L21/768 , H01L23/522 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which enables to solve data erasure defects in a non-volatile memory. SOLUTION: The semiconductor device comprises a semiconductor substrate 101 having a non-volatile memory, a lower interconnection film 102 formed on the semiconductor substrate 101, an interlayer insulation film covering the lower interconnection film 102, and an upper interconnection film 106 which is formed in a via hole 109 extended onto the lower interconnection film 102 of the interlayer insulation film and is electrically connected to the lower interconnection film 102. The interlayer insulation film is formed of a silane-based oxide film 103, an SOG film 104, and a TEOS film 105, which are stacked in this order.

7. 发明专利

JP2002184951A SEMICONDUCTOR DEVICE HAVING CAPACITY ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002184951A
公开(公告)日：2002-06-28
申请号：JP2000382038
申请日：2000-12-15
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： TAKADA YOSHIFUMI , IZUMITANI JUNKO , SUNADA SHIGEKI
IPC分类号： H01L23/52 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacity element including a large capacitance capable of preventing a diffusion of metal atoms in a lower layer electrode 9A and a method for manufacturing the same. SOLUTION: A dielectric layer 10 for the capacity element is formed on the lower layer electrode 9A. An interlayer insulating layer 11 is formed on the electrode 9A and the layer 10 for the capacity element. A plug hole 11a arriving at the layer 10 is formed on the layer 11. Upper layer electrodes 12A and 13A are formed to fill in the hole 11a and opposed to the electrode 9A via the layer 10. The layer 10 is contacted with the upper surface of the electrode 9A on a region directly under the hole 11a and the region of the outer periphery from the peripheral wall of the hole 1a.

8. 发明专利

JP2001196413A SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CMP DEVICE AND METHOD 失效
公开(公告)号：JP2001196413A
公开(公告)日：2001-07-19
申请号：JP2000003708
申请日：2000-01-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： HARADA SHIGERU , TAKADA YOSHIFUMI , IZUMITANI JUNKO
IPC分类号： H01L23/52 , H01L21/304 , H01L21/3205 , H01L21/60 , H01L23/485
摘要： PROBLEM TO BE SOLVED: To protect the pad electrodes of a highly integrated semiconductor device against surface oxidation so as to provide the semiconductor device which is high in bonding strength to outer terminals. SOLUTION: A semiconductor device is equipped with a pad electrode connected to an outer electrode and a multiplayer wiring structure connected to the pad electrode, where an insulating film provided with an opening to make the surface of the pad electrode exposed is formed covering the pad electrode, and the one surface of the insulating film is brought into contact with a metal surface of noble metal material selected out of noble metal and metal which contains the noble metal as a main component.

9. 发明专利

JP2003142485A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003142485A
公开(公告)日：2003-05-16
申请号：JP2001336202
申请日：2001-11-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： IZUMITANI JUNKO , TAKEWAKA HIROMOTO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L21/82 , H01L23/485 , H01L23/522 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which connection reliability and stability are improved when a bonding wire is bonded to a bonding pad in a semiconductor device with a multilayer wiring structure using a copper wire, and a method of manufacturing the same. SOLUTION: A third layer wire 17 and a bonding pad 71, both of which are made of aluminum alloys, are partially formed on a second interlayer insulating film 14. An open hole 74 having a bottom surface defined by the bonding pad 71 is partially formed in a third interlayer insulating film 63, fourth interlayer insulating film 67, protection insulating film 72 and buffer coating film 73. A bonding wire 75 is inserted through the open hole 74 and bonded to the bonding pad 71.

10. 发明专利

JP2002353161A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND THE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002353161A
公开(公告)日：2002-12-06
申请号：JP2001157026
申请日：2001-05-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKEWAKA HIROMOTO , KAMOSHIMA TAKAO , IZUMITANI JUNKO
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/306 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/544
摘要： PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, which can suppress or avoid remaining abrasives in dents on the surface, after a CMP process. SOLUTION: After a titanium nitride film 5 is formed, a tungsten film 6 is formed on the whole surface. By setting the reaction temperature to around 430 deg.C, a seed layer about 100 nm thick is deposited by using WF6 : 50 sccm, SiH4 : 10 sccm and H2 : 1,000 sccm as the reaction gas in an atmosphere of Ar, N2 : 30 Torr. After that, the film around 300 nm thick is further deposited by using WF6 : 75 sccm and H2 : 500 sccm as the reaction gas in an atmosphere of Ar, N2 : 80 Torr. The tungsten film 6 has pillar-shaped grains 6a of fine diameters, such that the abrasives 50 used in the CMP process are difficult to adhere between the grains. Specifically, the tungsten film 6 has grains 6a possessing diameters of about 10-20 nm.

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