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1. 发明专利

JP2002009161A SEMICONDUCTOR DEVICE AND ARRANGEMENT METHOD OF DUMMY PATTERN 失效
公开(公告)号：JP2002009161A
公开(公告)日：2002-01-11
申请号：JP2001012789
申请日：2001-01-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , OKADA MASAKAZU , KITANI TAKESHI , IGARASHI MOTOSHIGE
IPC分类号： G06F17/50 , H01L21/3205 , H01L21/76 , H01L21/82 , H01L21/822 , H01L23/52 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To improve the flatness of a semiconductor device. SOLUTION: The semiconductor device is provided with a semiconductor board 1, a first A/A dummy pattern 5a on the element separation area of the semiconductor board 1, and a second A/A dummy pattern 5b having a smaller pitch than the first A/A dummy pattern 5a. The arrangement of the first and second A/A dummy patterns 5a, 5b is performed in another step. The semiconductor device has the dummy patterns arranged in response to the occupation rate of an element pattern in a mesh area dividing the area on the semiconductor board into plurality in the other aspect.

2. 发明专利

JPH06125070A SOLID-STATE IMAGE SENSING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06125070A
公开(公告)日：1994-05-06
申请号：JP29813592
申请日：1992-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEKAWA SHIGETO , YAMAMOTO HIDEKAZU , KAWASHIMA HIKARI
IPC分类号： G02B27/00 , H01L27/14 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/372
摘要： PURPOSE:To prevent incident light from dispersing to the periphery of a light- receptive section and control smearing without degrading the sensitivity of the light-receptive section. CONSTITUTION:A luminous dispersion layer 19 is formed between an element 201 and lens layer 203. The luminous dispersion layer 19 consists of a light transmission layer 19b of a higher refractive index on the incidence side; and a light transmission layer 19a of a lower refractive index on the exit side. The luminous dispersion layer 19 refracts and disperses incident light A, collected by the lens layer 203, so that the light will be as close to a parallel luminous flux as possible.

3. 发明专利

JPH05326900A SOLID-STATE IMAGE-SENSING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05326900A
公开(公告)日：1993-12-10
申请号：JP15135292
申请日：1992-05-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , NISHIOKA YASUTAKA
IPC分类号： H01L27/14
摘要： PURPOSE:To increase a microlens in manufacturing margin and reliability to thermal stress when the microlens is formed through a thermal reflow process. CONSTITUTION:A step is provided to a flattened layer 11 by etching for the formation of a boundary region 11b (11c) recessed or protrudent. Or, a film different in wettability is added to provide a boundary region. A microlens pattern 12a is formed between boundary regions, which is subjected to a thermal reflow process for the formation of a microlens 12 determined by the edges of the boundary regions. Therefore, a microlens can be enhanced in manufacturing margin and reliability to thermal stress when it is formed through a thermal reflow.

4. 发明专利

JPH05226621A SOLID-STATE IMAGE PICK-UP ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH05226621A
公开(公告)日：1993-09-03
申请号：JP6134992
申请日：1992-02-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , NISHIOKA YASUTAKA
IPC分类号： H01L27/14
摘要： PURPOSE:To achieve a solid-stage image pick-up element without any detection of a solid pattern by performing patterning so that a plurality of layers may remain as an annular wall which separates a light-reception part from a peripheral circuit part and then forming a frame body part around a picture-element part. CONSTITUTION:Polysilicon is laminated on a silicon substrate 1 through an insulation interlayer film 3, a resist is coated, and exposure and patterning are made for eliminating etching and obtaining an electrode pattern 4 but a pattern surrounding a periphery of a picture-element part 31 is left at the time of exposure, and a frame-shaped pattern according to the polysilicon layer 4 is formed in reference to pads 32. Also, patterning is made similarly when forming a second polysilicon electrode layer 6 and an alumina layer 8 for screening light and wiring for leaving a frame-shaped pattern so that the picture-element part 31 may be surrounded, thus forming the frame-body part 1. Then, when a resist for patterning a light-screening film and the alumina 8 for wiring is rotated and coated, it spreads from the center part of a wafer toward outside and then a film thickness of the resist within the picture-element part 31 is regulated by the frame body part 1, thus achieving a light-screening pattern for reducing coating nonuniformity.

5. 发明专利

JPH0575085A MANUFACTURE OF SOLID STATE IMAGE PICKUP DEVICE AND SOLID STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPH0575085A
公开(公告)日：1993-03-26
申请号：JP26115291
申请日：1991-09-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , NISHIOKA YASUTAKA
IPC分类号： H01L27/14
摘要： PURPOSE:To improve a light condensing efficiency and light sensing uniformity by a method wherein a microlens pattern is made of base material having photosensitivity and, after the parts of the pattern are exposed to change the thermosoftening points of those parts, microlenses are formed by thermal flow. CONSTITUTION:A microlens base material film 9a made of main chain decomposing type polymer is formed on a semiconductor substrate 10. After the edge parts of microlens forming part are removed on light shielding films 8 provided between respective optoelectronic transducer parts and a microlens pattern 9b are formed, the required parts of the microlens pattern 9b are exposed. The thermosoftening point of the main chain decomposing type polymer is lowered when the main chains are decomposed by exposure. Therefore, the exposed regions 9d and the non-exposed regions 9c have different thermosoftening points. By applying heat to obtain a temperature between those thermosoftening points, microlenses 9 whose curvatures are controlled can be formed. With this constitution, a light condensing efficiency and uniformity of sensitivity can be improved.

6. 发明专利

JPH04215431A 失效
公开(公告)号：JPH04215431A
公开(公告)日：1992-08-06
申请号：JP41069090
申请日：1990-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI SHOJI , KAWASHIMA HIKARI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a method of working a general-purposed semiconductor substrate which can be precisely worked without deformation of a resist pattern due to rise in substrate temperature during dry etching by using positive photoresist used normally. CONSTITUTION:A semiconductor substrate 10 is overlaid with a silicon oxide film 2, which is spread with positive resist 1; then, this positive resist is patterned and implanted with silicon ions. With an ion-implanted positive resist layer 1' with the etching mask, the silicon oxide film 2 is processed by plasma etching. In case of a substrate of large step, this substrate 11 is overlaid with a lower flattened resist layer 4, With is spread with an upper positive resist layer 1 and then implanted with silicon ions; with an upper positive resist layer 1' as the etching mask, the lower layer flattened resist layer 4 is processed by plasma etching.

7. 发明专利

JPH03297167A MICROLENS 失效
公开(公告)号：JPH03297167A
公开(公告)日：1991-12-27
申请号：JP10085790
申请日：1990-04-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , SUZUKI SHOJI , NISHIOKA YASUTAKA
IPC分类号： G02B3/00 , H01L27/14 , H04N5/335
摘要： PURPOSE:To remove an unnecessary flattened layer part such as a pad part by employing an inorganic material and an organic material for a microlens or employing an organic material for the flattened layer and an inorganic material for the microlens. CONSTITUTION:A transparent inorganic material silicon ladder polymer 3a is formed on a semiconductor substrate including an optical detector part and a transfer part into a thickness or more where a base stepped part can be absorbed. There are successively laminated a transparent thermoplastic resin layer 4a of a microlens (Ml) host material and a photoresist layer 5a for plasma etching. After the photoresist is patterned 5, pattern formation 4b of the Ml host material is performed by O2 plasma etching. Thereupon, the polymer 3a acts as a stopper, and after removal of the resist Ml formation 4 is performed by heat reflowing. Finally, after a photoresist 6 is formed and patterned, an unnecessary part is removed by etching, and the resist is removed to form the Ml. Hereby, the Ml can be formed with high accuracy and hence the unnecessary part such as a pad can be removed.

8. 发明专利

JPH03148173A MICROLENS FORMATION METHOD 失效
公开(公告)号：JPH03148173A
公开(公告)日：1991-06-24
申请号：JP28715489
申请日：1989-11-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , KUNORI YUUICHI
IPC分类号： H01L27/14
摘要： PURPOSE:To make it possible to obtain a thermally stabilized and high light collecting power by providing a microlens shape to a thermosoftening material formed on a lens base material made of a thermally stabilized material and then carrying out etching so that its high curvature shape may be reflected to the lens base material. CONSTITUTION:A layer 21a which comprises a thermally stabilized material having a high transmission factor is formed on a semiconductor substrate 10 having a light receiving section or a light transmitting section, and then a thermosoftening resin layer 22a is deposited thereon. The layer is partially removed so that it may form a rectangular body 22b in cross section. The substrate 10 is further heated and subjected to thermal reflow. The thermosoftening resin layer 22b is turned into a lens-shaped body whose shape is equivalent to a microlens 21. Then, the lens base material 21a is etched so that its high curvature shape may be reflected. This construction makes it possible to manufacture a microlens 21 having a highly thermal stabilizing and light collecting power.

9. 发明专利

JPS60188902A Manufacture of color separating filter 失效
标题翻译：颜色分离过滤器的制造
公开(公告)号：JPS60188902A
公开(公告)日：1985-09-26
申请号：JP4610684
申请日：1984-03-07
申请人： Mitsubishi Electric Corp
发明人： KAWASHIMA HIKARI , SAEKI HIDEO
IPC分类号： G02B5/20 , H01L27/14 , H04N9/04
摘要： PURPOSE: To obtain a filter which causes no color shift and is good in its color reproduction by forming a negative type photosensitive film on an intermediate dyeing-proof film, and executing a specified exposure, when constituting a color separating filter of yellow and cyan purple blue, and green consisting of a color mixture of yellow and cyan purple blue.
CONSTITUTION: A cyan purple blue constituting dyeing film 2d and a green constituting dyeing film 2e are formed on a substrate 1 of glass, etc. Subsequently, an intermediate dyeing-proof film 3a and a photosensititive film 2 of a negative type are formed successively extending over the surface of the film 2d, 2d. Next, an exposure is executed through a photomask 5 having a transparent window 5a and 5b corresponding to a right above part of the film 2a of the film 2, and a yellow optical transmission film formed part, and thereafter, an exposure is executed through a photomask 6 having a transparent window 6a on only a part corresponding to the right above part of the film 2e of the photosensitive film 2. Subsequently, after developing the photosensitive film 2, a green transmission film constituting dyeing film 2h is formed on the film 3a, and also a yellow optical transmission film 2g is formed. In the end, a surface protecting film is formed extending over the surface of the dyeing-proof film 3a and the films 2g, 2h. In this way, a filter wich causes no color shift is obtained.
COPYRIGHT: (C)1985,JPO&Japio
摘要翻译：目的：为了获得不产生色移的滤色片，并且通过在中间防染膜上形成负型感光膜并进行特定的曝光，可以在构成黄色和青色紫色的分色滤光片时进行色彩再现蓝色和绿色由黄色和青色紫色蓝色的混合物组成。构成：在玻璃等的基板1上形成青色蓝色蓝色构成染色膜2d和绿色构成染色膜2e。接着，将中间耐染色膜3a和负型光敏膜2依次形成在膜2d，2d的表面上。接下来，通过具有对应于膜2的膜2a的上方的右上方的透明窗口5a和5b的光掩模5进行曝光，并且形成黄色光透射膜，然后通过光掩模6在仅与感光膜2的膜2e的上方的右上部分的部分上具有透明窗口6a。然后，在显影感光膜2之后，在膜3a上形成构成染色膜2h的绿色透射膜，并且还形成黄色光传输膜2g。最后，形成在防染膜3a和膜2g，2h的表面上延伸的表面保护膜。以这种方式，获得不产生色移的滤光片。

10. 发明专利

JP2000349143A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000349143A
公开(公告)日：2000-12-15
申请号：JP16125199
申请日：1999-06-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASHIMA HIKARI , YAMADA KEIICHI , HIGASHIYA KEIICHI
IPC分类号： H01L21/76 , H01L21/762 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To suppress occurrence of a significant step after a CMP process by allowing the ratio between the protruding part occupation percentage of an element formation region pattern and that of a dummy pattern to be a specified value. SOLUTION: An element formation region pattern protruding part occupation percentage is defined as a region, which is sized by (x) to each element region pattern 4, divided by the area of a memory cell region. In short, when the protruding part of an embedded oxide film 2 is so deposited as a side surface is tilted by 45 deg., it is the area of a region, which is reduced from an outer perimeter by (x), divided by the area of a specified region. A dummy pattern occupation percentage is defined to be the region, which is sized by (x) to a flat region which is occupied by each dummy pattern 5, divided by a specified cell region 6. In short, when the protruding part of an embedded oxide film 2 is so deposited as a side surface is tilted by 45 deg., it is the area of a region, which is reduced from an outer perimeter by (x), divided by the area of the specified cell region 6. Here, the dummy pattern protruding part occupation percentage is 80-120% of the element formation region pattern protruding part occupation percentage.

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