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    • 4. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS5890782A
    • 1983-05-30
    • JP19111981
    • 1981-11-25
    • MITSUBISHI ELECTRIC CORP
    • ISHIZU AKIRA
    • H01L29/78H01L29/786
    • PURPOSE:To contrive the improvement of the characteristic of the titled device, by forming an amorphous Si light shield layer in the lower part of a semiconductor in a thin film transistor formed on a transparent substrate. CONSTITUTION:On the transparent insulation layer substrate 1, a semiconductor layer 2, a gate insulation layer 3, an insulation layer 4, an impurity high density layer 5, a gate electrode 6, and source and drain electrodes 7, 8 are provided, and accordingly a thin film transistor TFT is formed. In this TFT, the amorphous Si light shield layer 9 is formed in the lower part of the semiconductor. When the layer 9 is formed of amorphous Si, the incident light of short wavelength side than visible light is almost shielded, and accordingly it functions as an efficient incident light shield layer. Thus, the channel in the neighborhood of the boundary between layers 2 and 3 can be prevented from being photo- excited by the incident light transmitting through the substrate 1 resulting in the improvement of the TFT characteristic.
    • 5. 发明专利
    • Display element using transparent conductive substrate
    • 显示元件使用透明导电基板
    • JPS5741616A
    • 1982-03-08
    • JP11750980
    • 1980-08-25
    • Mitsubishi Electric Corp
    • YAMANE KEIJIISHIZU AKIRA
    • G09F9/30G02F1/1345
    • G02F1/1345
    • PURPOSE:To prevent the disconnection of external lead-out terminals by forming a conductive film consisting essentially of graphite on the external lead-out terminals provided on a transparent conductive substrate. CONSTITUTION:A front electrode substrate 1 having transparent electrode patterns and external lead-out terminals 3 on the front surface and a rear electrode substrate 2 having transparent electrode patterns on the rear surface are manufactured by vapor depositing indium oxide on two sheets of ''NESA '' glass plates for electrodes and subjecting these to prescribed patterning. After the conductive films are subjected to orientation treatment, a graphite coating consisting essentially of graphite is printed by screen printing on the patterns of the terminals 3 of the substrate 1, whereby a graphite conductive film 6 is formed. An org. adhesive agent is formed on the peripheral parts of the rear surface of the substrate 2 and the substrates 1, 2 are held at a prescribed spacing and are adhered, whereby the package of the liquid crystal display element is manufactured. The liquid crystal display element manufactured in this way did not cause any abnormality when operated for 1,000hr in a 60 deg.C and 90%Rh atmosphere.
    • 目的:通过在透明导电基板上设置的外部引出端子上形成基本上由石墨组成的导电膜来防止外部引出端子断开。 构成:在前表面具有透明电极图案和外部引出端子3的前电极基板1和在后表面上具有透明电极图案的后电极基板2通过在两片“NESA”上气相沉积氧化铟来制造 “用于电极的玻璃板并对其进行规定的图案化。 在导电膜进行取向处理之后,通过丝网印刷将基本上由石墨组成的石墨涂层印刷在基板1的端子3的图案上,由此形成石墨导电膜6。 一个组织 在基板2的后表面的周边部分上形成粘合剂,并且以规定的间隔保持基板1,2并粘合,由此制造液晶显示元件的封装。 以这种方式制造的液晶显示元件在60℃和90%Rh气氛中操作1,000小时没有引起任何异常。
    • 8. 发明专利
    • APPARATUS FOR PRODUCING THIN FILM
    • JPS60101926A
    • 1985-06-06
    • JP20943583
    • 1983-11-07
    • MITSUBISHI ELECTRIC CORP
    • ISHIZU AKIRA
    • H01L21/205H01L21/31
    • PURPOSE:To obtain a thin film only with replacing a thin screen plate which is inexpensive and easily available, by dividing a container with an energy beam screen plate into a non-reaction space and a reaction space, and exhausting the both spaces of air while supplying a reaction gas to the reaction space. CONSTITUTION:An Si substrate 5 is disposed on a holder 6 in a reaction space 14, and the space 14 is evacuated of air through a tube 8b, while a valve 13 of a tube 12 is opened for evacuating air in a non-reaction space 10 defined between an energy beam entrance window 2 and a screen plate 3. The substrate 5 is heated, and after the reaction space 14 reaches a required degree of vacuum, a reaction gas is introduced therein from the tube 7 while exhasting air through the tube 8b so as to adjust the degree of vacuum to a predetermined degree. Then an incident energy beam 3 is supplied through the window 2 and screen plate 9 so that Si, SiO2 or the like is deposited on the substrate 5. During this operation, the valve 13 remains opened to continue air evacuation. With this constitution, a thin film can be formed without contaminating the expensive window only with appropriate replacement of the inexpensive screen plate 9. Further, the pressure difference between the spaces 14 and 16 can be reduced by adjustment, so that the screen plate 9 can be formed in a thickness less than 1mm. and the cost can be lowered.
    • 9. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS5890783A
    • 1983-05-30
    • JP19112381
    • 1981-11-25
    • MITSUBISHI ELECTRIC CORP
    • ISHIZU AKIRA
    • H01L29/78H01L29/786
    • PURPOSE:To contrive the improvent of the thin film transistor characteristic, by providing an incident light shielding layer constituted of amorphous Si on the upper part of a semiconductor layer in a stagger type thin film transistor. CONSTITUTION:A gate electrode 2 is formed on the surface of an insulation layer 1 of glass, etc., and a semiconductor layer 4 is formed above the part wherein a gate insulation layer 3 is formed on the surface of the electrode resulting in a stagger type thin film transistor. However, in case of adhering the layer 6 on the surface of the layer 4, the amorphous Si has high resistance, and accordingly the ohmic contacts among a source electrode 8, a drain electrode 9 which are adherd above and the layer 4 become difficult, and therefore an insulation layer 7 is adhered on the layer 6 resulting in the formation of an impurity high density layer 5 with this layer 7 as a mask. Thereby, a stagger type semiconductor device having the layer 6 with incident light shield effect and good ohmic contacts of source and drain can be obtained.
    • 10. 发明专利
    • Liquid crystal display element
    • 液晶显示元件
    • JPS5741617A
    • 1982-03-08
    • JP11751080
    • 1980-08-25
    • Mitsubishi Electric Corp
    • ISHIZU AKIRAYAMANE KEIJI
    • G02F1/133
    • G02F1/133382
    • PURPOSE:To perform uniform heating with application of low voltage by forming transparent conductive films on the outside surfaces of substrate glass, forming a metallic film on the above-mentioned transparent conductive film in the parts other than display pattern and flowing electric current to said metallic film thereby allowing said film to evolve heat. CONSTITUTION:A liquid crystal is sealed to the inside part of transparent front and rear substrate glasses 1, 2. A resistant metallic film 4 is provided by using gold or the like on the surface, other than display pattern parts, of the transparent conductive film 3 consisting of tin oxide formed over the entire surface on the outside surface of the rear substrate glass 2, that is, on the surface opposite from the liquid crystal. A terminal part 7 for the purpose of application of voltage is provided on this film 4. Polarizing plates 5, 6 are provided on the rear surface of the glass 1 and the film 4.
    • 目的:通过在基板玻璃的外表面上形成透明导电膜,在施加低电压的情况下进行均匀加热,在除了显示图案之外的部分的上述透明导电膜上形成金属膜,并将流过的电流流向所述金属 从而允许所述膜放出热量。 构成:将液晶密封到透明的前后基板玻璃1,2的内部。通过在透明导电膜的除了显示图案部分之外的表面上使用金等来提供耐金属膜4 3由形成在后基板玻璃2的外表面上的整个表面上的氧化锡组成,即在与液晶相反的表面上。 在该膜4上设置用于施加电压的端子部7.偏振板5,6设置在玻璃1的后表面和膜4上。