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1. 发明专利

JP2007220649A Discharge plasma device 有权
标题翻译：放电等离子体装置
公开(公告)号：JP2007220649A
公开(公告)日：2007-08-30
申请号：JP2006243074
申请日：2006-09-07
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： HATAI TAKASHI , AIZAWA KOICHI , ICHIHARA TSUTOMU
IPC分类号： H01J63/08
摘要： PROBLEM TO BE SOLVED: To provide a discharge plasma device capable of achieving long lifetime and improvement of reliability of an electron source to supply an electron into gas which has been filled in an airtight container.
SOLUTION: This has the airtight container 1 in which the gas has been sealed, a pair of electrodes 2a, 2b for discharge in order to form the discharge plasma in a desired discharge plasma formation space 3 by applying an electric field to the gas, the electron source 10 which is arranged in the airtight container 1 and which supplies the electron into the gas, and a grid electrode 20 oppositely arranged to the electron source 10, and this is provided with a discharge plasma formation assisting device to assist formation of the discharge plasma in the discharge plasma formation space 3. Of the pair of the electrodes 2a, 2b for discharge, one electrode 2a for discharge is an anode electrode and the other electrode 2b for discharge is a cathode electrode, and potential relation of the grid electrode 20, the cathode electrode 2b, and the anode electrode 2a has been set so that the potential of the grid electrode 20 becomes higher than that of the cathode electrode 2b and lower than that of the anode electrode 2a.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够实现长寿命并且提高电子源的可靠性以将电子供应到已经填充在气密容器中的气体中的放电等离子体装置。
解决方案：具有密封气体的气密容器1，用于放电的一对电极2a，2b，以便在期望的放电等离子体形成空间3中形成放电等离子体，通过施加电场至气体，布置在气密容器1中并将电子供应到气体中的电子源10和与电子源10相对布置的栅电极20，并且设置有用于辅助形成的放电等离子体形成辅助装置在用于放电的一对电极2a，2b中，一个用于放电的电极2a是阳极电极，另一个用于放电的电极2b是阴极电极，并且电位关系栅电极20，阴极电极2b和阳极电极2a被设定为使栅电极20的电位变得高于阴极电极2b的电位，并且低于阴极电极的阳极电极2a。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007087937A Electric discharge plasma generation auxiliary device 审中-公开
标题翻译：电动放电等离子体生成辅助装置
公开(公告)号：JP2007087937A
公开(公告)日：2007-04-05
申请号：JP2006227081
申请日：2006-08-23
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： AIZAWA KOICHI , HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J63/08
摘要： PROBLEM TO BE SOLVED: To provide an electric discharge plasma generation auxiliary device having longer life than convention and the reliability thereof is improved. SOLUTION: The electric discharge plasma generation auxiliary device for assisting the generation of electric discharge plasma used for a light emitting device including a sealed container 1 having an electric discharge medium gas sealed therein, and a pair of electrodes 2a and 2a being energy supply means placed in the sealed container 1 to supply energy for generating the plasma by electric discharging the gas. The electric discharge plasma generation auxiliary device has an electron source 10 placed in the sealed container 1 to supply electron into the gas, and a secondary electron emitting part 20 placed in the sealed container 1 to emitt the secndary electron into the gas by collision of electrons emitted from the electron source 10. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有比常规更长寿命的放电等离子体产生辅助装置，并且其可靠性得到改善。解决方案：用于辅助产生放电等离子体的放电等离子体产生辅助装置，该发光装置包括密封在其中的放电介质气体的密封容器1，以及一对电极2a和2a是能量供给装置放置在密封容器1中，以通过电气放电来提供用于产生等离子体的能量。放电等离子体产生辅助装置具有放置在密封容器1内的电子源10，以将电子供应到气体中，并且将二次电子发射部分20放置在密封容器1中，以通过电子碰撞将第二电子发射到气体中从电子源10发射。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2003331719A Manufacturing method of field emission electron source 审中-公开
标题翻译：场发射电子源的制造方法
公开(公告)号：JP2003331719A
公开(公告)日：2003-11-21
申请号：JP2002132352
申请日：2002-05-08
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： HATAI TAKASHI , WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission electron source in which the stability with the passage of time of the emission current and electron emission efficiency can be improved compared with the conventional art. SOLUTION: This is a manufacturing method of a field emission electron source 10 in which an intense-field drift layer 6 is interposed between a lower electrode 2 and an upper electrode 7. The intense-field drift layer 6 is formed by carrying out a cleaning process after an oxidation process that oxidizes a compound nano-crystal layer 4 containing polycrystalline silicon grains and a great number of silicon crystallites is carried out. In the cleaning process, after the cleaning process of removing the residual impurities in the oxidized compound nano-crystal layer using an acid solution, a water rinsing process is carried out. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种场发射电子源的制造方法，其中与现有技术相比，可以提高发射电流的时间的稳定性和电子发射效率。解决方案：这是一种场致发射电子源10的制造方法，其中强电场漂移层6插在下电极2和上电极7之间。强场漂移层6通过携带在氧化含有多晶硅晶粒和大量硅微晶的复合纳米晶层4的氧化工艺之后，进行清洗处理。在清洗过程中，在使用酸溶液除去氧化的化合物纳米晶层中的残留杂质的清洗处理之后，进行水洗处理。版权所有（C）2004，JPO

4. 发明专利

JP2003187688A FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURING METHOD OF THE SAME 审中-公开
公开(公告)号：JP2003187688A
公开(公告)日：2003-07-04
申请号：JP2001380355
申请日：2001-12-13
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , BABA TORU
IPC分类号： H01J9/02 , H01J1/30 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a field emission type electron source having improved heat resistant property while restraining the lowering of electron emission property, and to provide a manufacturing method of the same. SOLUTION: The field emission type electron source 10 comprises a lower electrode 2 formed on one surface side of a substrate, a non-doped polycrystalline silicon layer 3 formed on the lower electrode 2 as a semiconductor layer, a strong electric field drift layer 6 composed of oxidized porous silicon polycrystalline layer formed on the polycrystalline silicon layer 3 as an electron passing layer, and a surface electrode 7 formed on the strong electric field drift layer 6. The surface electrode 7 is composed of a conductive carbide layer 7a laminated on the strong electric field drift layer 6 and a noble metal layer 7b laminated on the conductive carbide layer 7a. COPYRIGHT: (C)2003,JPO

5. 发明专利

JP2003133309A METHOD AND DEVICE FOR FORMING THIN INSULATING FILM, FIELD EMISSION ELECTRON SOURCE, AND MOSFET 审中-公开
公开(公告)号：JP2003133309A
公开(公告)日：2003-05-09
申请号：JP2001329908
申请日：2001-10-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , TAKEGAWA YOSHIYUKI , BABA TORU
IPC分类号： H01J1/312 , H01J9/02 , H01L21/316 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method by which a thin insulating film having a higher breakdown voltage than the conventional thin insulating film has can be formed. SOLUTION: After a thin insulating film (silicon oxide film), which serves as a base, is formed on the surface of a silicon crystal through an electrochemical method, a desired thin insulating film (silicon oxide film) is obtained by performing a heat-treating step in the temperature profile shown in Fig. 1. In order to obtain the desired thin insulating film, first heat treatment is conducted at a first set temperature T1 and a temperature increase rate both of which are set so that the moisture contained in the thin insulating film is removed, without bumping and second heat treatment is performed at a second set temperature T2, which is set higher than the first set temperature T1, so that structure relaxation may occur in the thin insulating film in the heat- treating step, as shown in Fig. 1.

6. 发明专利

JP2003086093A METHOD OF MANUFACTURING FIELD EMISSION TYPE ELECTRON SOURCE 审中-公开
公开(公告)号：JP2003086093A
公开(公告)日：2003-03-20
申请号：JP2002122330
申请日：2002-04-24
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type electron source with low cost, high electron emission efficiency, and high reliability. SOLUTION: A polycrystal silicone layer 3 which is a layered semiconductor made of polycrystal silicon is formed on a conductive layer 12 constituting a part of a conductive substrate, and the polycrystal silicon layer 3 is annealed in inert gas. The annealed polycrystal silicon layer 3' constitutes the polycrystal semiconductor layer, a part of the polycrystal layer 3' is made porous by anodic oxidation to form the polycrystal silicon layer 4. After that, the porous polycrystal silicon layer 4 is electrochemically oxidized to form a strong field drift layer 6. Then, a surface electrode 7 is formed on the strong field drift layer 6.

7. 发明专利

JP2002343239A METHOD OF MANUFACTURING FIELD EMISSION ELECTRON SOURCE 失效
公开(公告)号：JP2002343239A
公开(公告)日：2002-11-29
申请号：JP2001145526
申请日：2001-05-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type elec tron source capable of improving reliability and an electron emission characteris tic. SOLUTION: A porous polycrystalline silicon layer 4 is formed, by forming a polycrystalline silicon layer 3 which is a lamellar semiconductor layer comprising polycrystalline silicon on a conductive layer 12 composing a part of a conductive substrate and then providing pores on a part of the polycrystalline silicon layer 3 by anodizing. A strong field drift layer 6' is formed by electrochemically oxidizing the porous polycrystalline silicon layer 4. A defect in the strong field drift layer 6' is passivated, by applying a hydrogen radical on a surface of the strong field drift layer 6'. A surface electrode 7 is formed on a strong field drift layer 6, after irradiation of hydrogen radicals.

8. 发明专利

JP2002343230A FIELD EMISSION TYPE ELECTRON SOURCE 失效
公开(公告)号：JP2002343230A
公开(公告)日：2002-11-29
申请号：JP2001145527
申请日：2001-05-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , KUNUGIBARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI
IPC分类号： H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable field emission type electron source which can be used as an electron source for display. SOLUTION: The field emission type electron source is provided with a plurality of wirings 12a aligned on one surface of an insulation substrate 11 used as a substrate, a strong electric field drift layer 6 having a plurality of drift parts 6a formed so as to overlap the wirings 12a, a plurality of surface electrodes 7 respectively facing the wirings 12a via each drift part 6a, and a plurality of bus electrodes 25, connected in common the plurality of surface electrodes 7 which is aligned in the direction intersecting the wirings 12a on the strong electric field drift layer 6 per row. Narrow parts 8a comprising a conductive material narrowing current paths between surface electrodes 7 and bus electrodes 25 are interposed between the surface electrodes 7 and the bus electrodes 25. The narrow parts 8a will break, when an overcurrent flows. The narrow parts 8a constitutes overcurrent protecting elements, which is interposed between the surface electrodes 7 and the bus electrodes 25 and which limits the current flowing in the surface electrodes 7.

9. 发明专利

JP2002008520A FIELD RADIATION TYPE ELECTRON SOURCE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002008520A
公开(公告)日：2002-01-11
申请号：JP2000191978
申请日：2000-06-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , KONDO YUKIHIRO
IPC分类号： H01J9/02 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field radiation type electron source in which the fluctuation of electron emitting direction is smaller than the conventional method and its manufacturing method. SOLUTION: An intense-field drift layer 6 having a porous polycrystalline silicon layer is formed on the conductive substrate 100 and a conductive film 7 is provided on the intense-field drift layer 6. The drift section 6a of the intense-field drift layer 6 is formed by smoothing the surface of a polycrystalline silicon layer 3 and then by making porous by anodizing and further by oxidizing by a rapid thermal oxidization technology.

10. 发明专利

JP2001118500A ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR FABRICATING 失效
公开(公告)号：JP2001118500A
公开(公告)日：2001-04-27
申请号：JP29594999
申请日：1999-10-18
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： HATAI TAKASHI , KOMODA TAKUYA , AIZAWA KOICHI
IPC分类号： H01J9/02 , H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating an electric field radiation electron source with improved withstand voltage and electron emission efficiency. SOLUTION: A strong electric field drift layer 6 made of an oxidized porous polycrystalline silicon layer is deposited on the main surface of a conductive n-type silicon substrate 1, having a surface electrode 7 formed thereon. An ohmic electrode 2 is formed in the inside of the n-type silicon substrate 1. The drift layer 6 is obtained by oxidizing the porous polycrystalline silicon layer 4 formed by oxidizing the polycrystalline silicon layer 3 with the anode. A lamp annealing apparatus is used for the oxidizing process, maintained under a vacuum during the period of temperature rise from room temperature to oxidation temperature, for example, 900 deg.C, at which temperature the furnace is charged with oxygen to initiate oxidation process.

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