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1. 发明专利

JP2008185374A Manufacturing method of sensor device 审中-公开
标题翻译：传感器装置的制造方法
公开(公告)号：JP2008185374A
公开(公告)日：2008-08-14
申请号：JP2007017201
申请日：2007-01-26
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： SHIROISHI HISATOKU , KATAOKA KAZUSHI , SAIJO TAKASHI , OKUTO TAKASHI , BABA TORU , TAURA TAKUMI
IPC分类号： G01P15/08 , G01P15/12 , G01P15/18
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a sensor device, having high reliability even if its miniaturization or height lowering is realized.
SOLUTION: This method has a process A for manufacturing a cover substrate 1; a process B for bonding the cover substrate 1 to a through hole wiring formation substrate 11 in the further depressurized state than an atmospheric pressure, storing a sensor element 3 in a recessed part airtightly, and manufacturing the sensor device 100A; and a process C for deforming the cover substrate 1 so that a recessed part inner bottom surface approaches the sensor element 3, by arranging the sensor device 100A in the air. In the process A, the recessed part is formed with the inner bottom surface being separated from the sensor element 3, as going toward the center.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种传感器装置的制造方法，即使实现其小型化或高度降低也具有高可靠性。解决方案：该方法具有用于制造覆盖基板1的工艺A; 用于将盖基板1与通气布线形成基板11进一步压缩状态比大气压接合的工序B，将传感器元件3密封地保持在凹部内，制造传感器装置100A; 以及通过将传感器装置100A布置在空气中，使盖基板1变形从而凹部内底面接近传感器元件3的工序C。在处理A中，凹部形成为内侧底面与传感器元件3分离，朝向中心。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008008673A Acceleration sensor 审中-公开
标题翻译：加速传感器
公开(公告)号：JP2008008673A
公开(公告)日：2008-01-17
申请号：JP2006177060
申请日：2006-06-27
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： SHIROISHI HISATOKU , KATAOKA KAZUSHI , SAIJO TAKASHI , OKUTO TAKASHI , KAMAKURA MASANAO , BABA TORU , TAURA TAKUMI , TOMOIDA AKIRA
IPC分类号： G01P15/12 , B81B3/00 , G01P15/08 , G01P15/18 , G01P21/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide an acceleration sensor capable of easily recognizing operation in each of a plurality of directions where the acceleration can be detected.
SOLUTION: The acceleration sensor comprises a sensor substrate 1 that has gauge resistors Rx1-Rx4, Ry1-Ry4 and Rz1-Rz4 disposed in a movable section formed of a weight section 12 and four bending sections 13 and can detect accelerations in three directions, a first cover substrate 2 joined to one surface side of the sensor substrate 1, and a second cover substrate 3 joined to the other surface side of the sensor substrate 1. A package is constituted by the cover substrates 2 and 3 and a frame section 11 of the sensor substrate 1. The acceleration sensor has, as a driving means for operation recognition for forcibly moving the movable section with an electromagnetic force, a plurality of pairs of excitation sections 26 formed of coils and disposed on the first cover substrate 2 and magnetic coupling sections 15 that are disposed in the weight section 12 and can magnetically couple to the excitation sections 26, and can generate the electromagnetic force for operation recognition independently every pair of excitation section 26 and magnetic coupling section 15.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够容易地识别可以检测加速度的多个方向中的每一个方向上的操作的加速度传感器。解决方案：加速度传感器包括传感器基板1，该传感器基板1设置在由重量部分12和四个弯曲部分13形成的可移动部分中的测量电阻器Rx1-Rx4，Ry1-Ry4和Rz1-Rz4，并且可以检测三个加速度部分连接到传感器基板1的一个表面侧的第一覆盖基板2和与传感器基板1的另一个表面侧接合的第二盖基板3.封装由盖基板2和3以及框架传感器基板1的部分11.加速度传感器具有作为用于以电磁力强制地移动可动部分的操作识别的驱动装置，由线圈形成并设置在第一盖基板2上的多对激励部分26 和磁耦合部分15，它们设置在配重部分12中并且可以磁耦合到激励部分26，并且可以产生用于操作识别的电磁力倾向于每对激励部分26和磁耦合部分15.版权所有：（C）2008，JPO＆INPIT

3. 发明专利

JP2007266317A Sensor device, and manufacturing method thereof 有权
标题翻译：传感器装置及其制造方法
公开(公告)号：JP2007266317A
公开(公告)日：2007-10-11
申请号：JP2006089582
申请日：2006-03-28
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： OKUTO TAKASHI , KATAOKA KAZUSHI , SAIJO TAKASHI , BABA TORU , GOTO KOJI , MIYAJIMA HISAKAZU
IPC分类号： H01L23/02 , G01C19/00 , G01C19/56 , G01P15/08 , G01P15/12 , G01P15/18 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a sensor device capable of improving the manufacturing yield of the sensor device manufactured by using at least a sensor substrate, where a sensor and an IC cooperating with the sensor are formed at the side of the main surface of a semiconductor substrate, and a substrate for packages where a plurality of through-hole wires connected to the sensor electrically are formed; and to provide a manufacturing method of the sensor device. SOLUTION: A metal layer 18 for sealing and a metal layer 19 for electrical connection are formed on a surface insulating film 16 by etching back a part formed at a region E3 for junction in a multilayer insulating film, comprising a surface insulating film 16 and a multilayer structure section 41 formed at the side of the main surface of an SOI semiconductor substrate 10. A weight 12, a deflector 13, and the like of a sensor E1 are formed, the sensor substrate 1 is joined to a second substrate 3 for packages at normal temperatures, and the metal layers 18, 28 for sealing of the sensor substrate 1 and the first substrate 2 for packages, and the metal layers 19, 29 for electrical connection are joined directly. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提高使用至少传感器基板制造的传感器装置的制造成品率的传感器装置，其中与传感器协作的传感器和IC形成在主体侧半导体基板的表面，以及形成有与传感器电连接的多个通孔线的封装用基板。并提供传感器装置的制造方法。解决方案：用于密封的金属层18和用于电连接的金属层19通过在多层绝缘膜中的用于结的区域E3形成的部分进行回蚀而形成在表面绝缘膜16上，该部分包括表面绝缘膜 16和形成在SOI半导体基板10的主表面侧的多层结构部分41.形成传感器E1的重物12，偏转器13等，传感器基板1与第二基板并且用于密封传感器基板1的金属层18,28和用于封装的第一基板2以及用于电连接的金属层19,29被直接接合。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007263764A Chip-size package 有权
标题翻译：大小包装
公开(公告)号：JP2007263764A
公开(公告)日：2007-10-11
申请号：JP2006089580
申请日：2006-03-28
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： BABA TORU , KATAOKA KAZUSHI , SAIJO TAKASHI , OKUTO TAKASHI , GOTO KOJI , MIYAJIMA HISAKAZU
IPC分类号： G01P15/12 , G01P15/08 , G01P15/18 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide the sensor device allowing reduction of its height.
SOLUTION: The sensor device 1 is formed using an SOI substrate 10 including a silicon layer 10c on an insulating layer 10b on a support substrate 10a composed of a silicon substrate, and includes a sensor part (three-axis acceleration sensor part) E1 which has a movable part constituted of a weight part 12 and four flexure parts 13 and in which piezoelectric resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4 are formed on the movable part and an IC part E2 cooperating with the sensor part E1. Each of the piezoelectric resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4 and the IC part E2 are formed on the silicon layer 10c of the SOI substrate 10.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供允许降低其高度的传感器装置。解决方案：传感器装置1使用在由硅衬底构成的支撑衬底10a上的绝缘层10b上包括硅层10c的SOI衬底10形成，并且包括传感器部分（三轴加速度传感器部分） E1具有由重量部分12和四个挠曲部分13构成的可移动部分，并且其中压电电阻器Rx1至Rx4，Ry1至Ry4，Rz1至Rz4形成在可移动部分上，IC部件E2与传感器部分E1协作。在SOI衬底10的硅层10c上形成压电电阻器Rx1至Rx4，Ry1至Ry4，Rz1至Rz4和IC部分E2的每一个。（C）2008，JPO＆INPIT

5. 发明专利

JP2007263761A Manufacturing method of sensor device 有权
标题翻译：传感器装置的制造方法
公开(公告)号：JP2007263761A
公开(公告)日：2007-10-11
申请号：JP2006089555
申请日：2006-03-28
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： OKUTO TAKASHI , KATAOKA KAZUSHI , SAIJO TAKASHI , BABA TORU , GOTO KOJI , MIYAJIMA HISAKAZU
IPC分类号： G01P15/12 , B81C1/00 , H01L21/306 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a sensor device, capable of suppressing degradation of the characteristic of a sensor part caused by stress of an insulating film, formed on the surface of a semiconductor substrate.
SOLUTION: A sensor body 1 of the sensor device is equipped with a frame-shaped frame part 11, and an overlapping part 12 arranged inside the frame part 11 is rockably supported on the frame part 11 via a bending part 13, having flexibility on the main surface side of the sensor body 1. A sensing part for detecting bending of a movable part 15 is formed on the movable part 15, comprising the overlapping part 12 and the bending part 13, and an IC part E2 that cooperates with the sensing part is formed on the frame part 11, respectively. In this case, a surface protective layer 44 comprising a surface-insulating film 16 and a multilayered structure part 41 is formed over the whole main surface of the sensor body 1, and then a part (multilayered structure part 41) of the surface protection layer 44 formed on the movable part 15 is removed by etching, remaining only the surface insulating film 16, and the film thickness is made thin.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种传感器装置的制造方法，其能够抑制形成在半导体衬底的表面上的由绝缘膜的应力引起的传感器部件的特性的劣化。解决方案：传感器装置的传感器体1配备有框状框架部11，并且布置在框架部11内部的重叠部12经由弯曲部13摇动地支撑在框架部11上，弯曲部13具有传感器主体1的主表面侧的灵活性。在包括重叠部分12和弯曲部分13的可移动部分15上形成有用于检测可动部分15的弯曲的感测部分，以及与感测部分分别形成在框架部分11上。在这种情况下，在传感器主体1的整个主表面上形成包括表面绝缘膜16和多层结构部分41的表面保护层44，然后形成表面保护层的一部分（多层结构部分41） 44通过蚀刻除去，仅保留表面绝缘膜16，并且使膜厚变薄。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2006275660A Semiconductor sensor and its manufacturing method 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：JP2006275660A
公开(公告)日：2006-10-12
申请号：JP2005093087
申请日：2005-03-28
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： TAKEGAWA YOSHIYUKI , SUZUKI YUJI , OKUTO TAKASHI , BABA TORU , OKA NAOMASA , MIYAJIMA HISAKAZU , KATAOKA KAZUSHI
IPC分类号： G01P15/08 , B81B3/00 , B81C3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor sensor, and its manufacturing method, capable of ensuring the airtightness of a space for housing the components of a moving part and a detecting element with good reproducibility, while enhancing the reproducibility of the electric property of a connecting part which electrically connects one end part of a feedthrough wiring conductor to the other end of which is connected to the conductor pattern of a packaging board without using a bonding wire, and a conductive material portion being opposed to the one end part.
SOLUTION: A first board 2 for a package is joined to one surface side of a sensor chip 1 having a weight portion 12 and a bending portion 13 as the moving part, and a second board 3 for a package is joined to the other surface side. A recession 25 formed in the first board 2 constitutes a recession for housing a pad 15 being the conductive material portion. The volume of the internal space of the recession is set to a value capable of house a connecting part 24 connecting the pad 15 and the feedthrough wiring conductor 23 electrically, in addition to the pad 15.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体传感器及其制造方法，其能够确保用于容纳具有良好再现性的移动部件和检测元件的部件的空间的气密性，同时提高电气的再现性电连接馈通布线导体的一个端部的连接部件的特性，其另一端连接到包装板的导体图案而不使用接合线;以及导电材料部分，其与所述一个端部。解决方案：用于封装的第一板2连接到具有重量部分12和弯曲部分13作为移动部分的传感器芯片1的一个表面侧，并且用于封装的第二板3接合到其他表面。形成在第一板2中的凹部25构成用于容纳作为导电材料部的焊盘15的凹部。除了垫15之外，经济衰退的内部空间的体积被设定为能够容纳连接焊盘15和馈通布线导体23的连接部分24的值。（C）2007， JPO＆INPIT

7. 发明专利

JP2006116511A Method and device for electron beam irradiation treating 有权
标题翻译：电子束辐射处理的方法和装置
公开(公告)号：JP2006116511A
公开(公告)日：2006-05-11
申请号：JP2004310009
申请日：2004-10-25
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： AIZAWA KOICHI , KOMODA TAKUYA , BABA TORU
IPC分类号： B01J19/12 , G21K1/00 , G21K5/04 , H01J1/312 , H01J37/06 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To provide an electron beam irradiation treating method easily stabilizing an irradiation condition of an electron beam to an object to be treated and capable of enhancing treatment efficiency, and an electron beam irradiation treating device. SOLUTION: In the electron beam irradiation treating method for treating so as to generate physical, chemical or biological action to the object to be treated by irradiating the object to be treated with the electron beam from an electron discharge part capable of discharging an electron, when a drive voltage setting a surface electrode 7 as a high electric potential side is applied between the surface electrode 7 and a lower electrode 5 both of whose surfaces are plane-like , as the electron discharge part, a plate type electron source 10 is used which has a strong electric field drift layer 6 served as an electron passage layer passing the electron and discharges the electron through the surface electrode 7 to directly irradiate the object to be treated 20 with the electron beam from the electron source 10 so as to bring the surface of the surface electrode 7 of the electron source 10 into contact with the object to be treated 20. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电子束照射处理方法，其能够容易地将电子束的照射条件稳定在待处理物体上并且能够提高处理效率，以及电子束照射处理装置。解决方案：在电子束照射处理方法中，通过用电子束照射被处理物的电子束，能够对待处理物体产生物理，化学或生物作用，电子时，在表面电极7和两面均为平面状的下电极5之间施加作为高电位侧的表面电极7的驱动电压作为电子放电部时，板型电子源10 被用作具有强电场漂移层6，其作为通过电子的电子通过层，并通过表面电极7排出电子，以用来自电子源10的电子束直接照射被处理物体20，以便使电子源10的表面电极7的表面与待处理物体20接触。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005308654A Electron source application device 有权
标题翻译：电子源应用器件
公开(公告)号：JP2005308654A
公开(公告)日：2005-11-04
申请号：JP2004128824
申请日：2004-04-23
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： BABA TORU , AIZAWA KOICHI , KOMODA TAKUYA
IPC分类号： G21K5/04 , G21K1/00
摘要： PROBLEM TO BE SOLVED: To provide an electron source application device to generate an electron or ion stably without being affected by humidity in air.
SOLUTION: This electron source application device is provided with an electron source 10 for emitting an electron beam by a ballistic type electron emission phenomenon, and a case 20 for storing the electron source 10. The case 20 is provided with a rectangular-shaped window hole 21 in a portion opposed to the electron source, and two gas introducing ports 22 for introducing dry gas (for example, dry air, dry oxygen, inert gas or the like) supplied to a space between the window hole 21 and the electron source 10.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电子源施加装置，以在不受空气中的湿度影响的情况下稳定地产生电子或离子。解决方案：该电子源施加装置设置有用于通过弹道型电子发射现象发射电子束的电子源10和用于存储电子源10的壳体20.壳体20设置有矩形 - 在与电子源相对的部分形成窗形孔21，以及两个气体导入口22，用于引入供给到窗孔21和窗口21之间的空间的干燥气体（例如干燥空气，干燥氧，惰性气体等）电子源10.版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004234917A Electron source 有权
标题翻译：电子源
公开(公告)号：JP2004234917A
公开(公告)日：2004-08-19
申请号：JP2003019501
申请日：2003-01-28
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , BABA TORU
IPC分类号： B82B1/00 , H01J1/312 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide an electron source capable of being used for a display with high reliability. SOLUTION: The electron source is provided with a plurality of band plate-shaped lower wirings 12a put in a row on one surface of an insulating board 11 as a substrate, a high electric field drift layer 6 having a plurality of drift parts 6a formed in a state overlapped on the lower wirings, a plurality of surface electrodes 7 laminated on each drift part 6a, and a plurality of bus electrodes 25 commonly connecting the plurality of the surface electrodes 7 arrayed in a direction crossing the lower wirings 12a on the high electric field drift layer 6 for each row. The drift parts 6a constitute an electron passing part and the high electric field drift layer 6 constitutes an electron passing layer. A resistive element 18 limiting current flowing between the surface electrode 7 and the bus electrode 25 is interposed between each surface electrode 7 and bus electrode 25. The resistive elements 18 are arranged so as not to overlap the lower wirings 12a in a direction of the insulating board 11. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供能够用于高可靠性的显示器的电子源。解决方案：电子源设置有作为基板的绝缘板11的一个表面上放置成行的多个带状下布线12a，具有多个漂移部的高电场漂移层6 6a形成在重叠在下布线上的状态，层叠在每个漂移部6a上的多个表面电极7和多个总线电极25，其共同连接沿与下布线12a交叉的方向排列的多个表面电极7 每行的高电场漂移层6。漂移部6a构成电子通过部，高电场漂移层6构成电子通过层。限制在表面电极7和总线电极25之间流动的电流的电阻元件18插入在每个表面电极7和总线电极25之间。电阻元件18被布置成不与绝缘的方向上的下布线12a重叠版权所有（C）2004，JPO＆NCIPI

10. 发明专利

JP2003045324A Manufacturing method of field emission type electron source 有权
标题翻译：场发射型电子源的制造方法
公开(公告)号：JP2003045324A
公开(公告)日：2003-02-14
申请号：JP2001225474
申请日：2001-07-26
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： BABA TORU , KOMODA TAKUYA , AIZAWA KOICHI , WATABE YOSHIFUMI , HATAI TAKASHI , HONDA YOSHIAKI , KUNUGIBARA TSUTOMU
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electron source which enables improvement of insulation breakdown voltage and long service life. SOLUTION: After forming a polycrystalline silicon layer 3 on top of an n-type silicon substrate 1 which constitutes a conductive substrate, a porous polycrystalline silicon layer 4 containing polycrystalline silicon grains and silicon microcrystal is formed by anodic oxidization process transforming the polycrystalline silicon layer 3 into a porous layer. Then, after a rinse process removing residual electrolyte solution on the porous crystalline silicon layer 4, a drying process using freeze-drying is execute and then, a high electric field drift layer 6 is formed by oxidizing the porous polycrystalline silicon layer 4.
摘要翻译：要解决的问题：提供能够提高绝缘击穿电压和长使用寿命的场致发射型电子源的制造方法。解决方案：在构成导电衬底的n型硅衬底1的顶部上形成多晶硅层3之后，通过阳极氧化工艺形成包含多晶硅晶粒和硅微晶的多孔多晶硅层4，其中多晶硅层3 成多孔层。然后，在清洗多孔结晶硅层4上的残留电解质溶液之后，执行使用冷冻干燥的干燥处理，然后通过氧化多孔多晶硅层4形成高电场漂移层6。

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