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1. 发明专利

JPH1146128A FILTER CIRCUIT HAVING PLURAL PASS BANDS 失效
公开(公告)号：JPH1146128A
公开(公告)日：1999-02-16
申请号：JP14351598
申请日：1998-05-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAGUCHI YUTAKA , EDA KAZUO , KAWASAKI OSAMU , SEKI SHUNICHI , ONISHI KEIJI , SATOU HIROTERU
IPC分类号： H03H9/145 , H03H9/72
摘要： PROBLEM TO BE SOLVED: To realize the filter circuit with a plurality of pass bands through the configuration of reducing number of matching elements furthermore. SOLUTION: In this circuit, inputs and outputs of a 1st filter 701 with a 1st pass band and a 2nd filter 702 with a 2nd pass band are connected together and then the circuit has a plurality of pass bands resulting from parallel connection of the filters. In this case, an inductive element 703-1 is connected to the input of the filter 701, inductive element 703-1 is connected to the output of the filter 701, a capacitive element 704-1 is connected to the input of the filter 702 and a capacitive element 704-2 is connected to the output of the filter 702.

2. 发明专利

JP2002252547A SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002252547A
公开(公告)日：2002-09-06
申请号：JP2001046997
申请日：2001-02-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NANBA AKIHIKO , ONISHI KEIJI , SATOU HIROTERU , FUJII KUNIHIRO , MURAKAMI KOZO
IPC分类号： H01L23/29 , H01L21/56 , H01L21/60 , H01L23/31 , H01L41/09 , H01L41/22 , H01L41/23 , H01L41/29 , H03H3/08 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which can be manufactured at low cost and has good reliability and its manufacturing method. SOLUTION: This device is equipped with a carrier 110 and a surface acoustic wave element 120 which is mounted on the carrier 110. The surface acoustic wave element 120 has a piezoelectric substrate 121, an inter-digital electrode 122 which is arranged on the piezoelectric substrate 121 and excites a surface acoustic wave, a wall member 123 which is arranged on the piezoelectric substrate 121 at the periphery of the inter-digital electrode 122, and a roof member 124 which is so arranged as to form a space 120a at the periphery of the inter- digital electrode 122 with the piezoelectric substrate 121 and wall member 123. Then the wall member 123 and roof member 124 are covered with a resin material 126 made of photosetting resin or anaerobic resin.

3. 发明专利

JPH10335974A ELASTIC BOUNDARY WAVE ELEMENT 失效
公开(公告)号：JPH10335974A
公开(公告)日：1998-12-18
申请号：JP13992197
申请日：1997-05-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SATOU HIROTERU , ONISHI KEIJI , SEKI SHUNICHI , TAGUCHI YUTAKA , TOMITA YOSHIHIRO
IPC分类号： H03H9/25 , H03H3/08
摘要： PROBLEM TO BE SOLVED: To facilitate characteristic designs and production and to obtain a stable characteristic by forming a comb-line electrode at recessed parts which are periodically provided on a main surface of one piezoelectric material single-crystal substrate, performing cleaning and hydrophilic processing of the surfaces of two substrates as an interface, overlapping them, performing heat processing and directly bonding them on an atomic level. SOLUTION: After a piezoelectric material single-crystal substrate 11 is cleaned, a photoresist mask is formed and performed etching, and a metallic film is formed on a plane on which recessed parts are periodically formed with vacuum deposition. Next, a metallic film except the photoresist mask and the recessed parts is eliminated, the metallic film remains only at the recessed parts, and comb-line electrodes 13, 13', 14 and 14' are formed. After that, piezoelectric material single-crystal substrates 11 and 12 are overlapped and undergo thermal processing at about 200 deg.C for ten hours after their surfaces are cleaned, and hydrophilic processing is performed. As a result, bonding that is related to oxygen, hydrogen and substrate component atoms proceeds from the bonding of hydrogen bonding subjects of a hydroxyl group and bonding is strengthened. This improves a piezoelectric and elastic quality and increases the degrees of freedom for designing.

4. 发明专利

JPH11127056A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JPH11127056A
公开(公告)日：1999-05-11
申请号：JP28810297
申请日：1997-10-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAGUCHI YUTAKA , ONISHI KEIJI , SEKI SHUNICHI , SATOU HIROTERU , KAWASAKI OSAMU , EDA KAZUO
IPC分类号： H01L41/09 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a smaller sized high performance surface acoustic wave element than the surface acoustic wave element made of a crystal, a lithium boride, or lithium tantalate substrate in the surface acoustic wave element used for a surface acoustic wave filter and a resonator. SOLUTION: Interdigital electrodes 20, 20' are placed on a piezoelectric substrate that contains lanthanum, gallium, silicon and oxygen as major components and whose composition is expressed as La3 Ga5 SiO14 . The surface acoustic wave element whose size is smaller than that of the surface acoustic wave element employing a crystal, a lithium boride or lithium tantalate substrate by properly selecting a cut face and a propagation direction of a surface acoustic wave of the piezoelectric substrate 10 is obtained. Furthermore, the surface acoustic wave element with a wider band width or a lower loss is obtained.

5. 发明专利

JPH1155070A SURFACE ACOUSTIC WAVE ELEMENT AND ITS PRODUCING METHOD 失效
公开(公告)号：JPH1155070A
公开(公告)日：1999-02-26
申请号：JP25910497
申请日：1997-09-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONISHI KEIJI , TAGUCHI YUTAKA , EDA KAZUO , KAWASAKI OSAMU , TOMITA YOSHIHIRO , SEKI SHUNICHI , NANBA AKIHIKO , SATOU HIROTERU , OGURA TETSUYOSHI
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To obtain an element that has a satisfactory temperature characteristic by making the coefficient of thermal expansion of an auxiliary substrate smaller than the coefficient of thermal expansion of a main substrate and making the auxiliary substrate thicker than the main substrate. SOLUTION: When a main substrate 101 and an auxiliary substrate 102 are overlapped through water and water is gradually eliminated, they change to conjunction through intermolecular force such as hydroxyl group, oxygen and hydrogen and both are strongly conjugated. A comb-shaped electrode 103 is formed on a main substrate side surface of an acquired conjugate. The substrate 101 whose coefficient of thermal expansion is large and the substrate 102 which is thicker than the main substrate and whose coefficient of thermal expansion is small are directly conjugated, compressive stress works near the surface of the main substrate due to positive temperature change to show a value that is smaller than the normal coefficient of thermal expansion of the substrate 101 and density change also becomes small. Therefore, the change of temperature dependency becomes small, the coefficient of linear expansion in the direction of surface acoustic wave propagation becomes small, and also, the frequency temperature characteristic of a surface acoustic wave element is improved.

6. 发明专利

JP2002135076A SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002135076A
公开(公告)日：2002-05-10
申请号：JP2000328723
申请日：2000-10-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONISHI KEIJI , SATOU HIROTERU , MORITOKI KATSUNORI
IPC分类号： H03H9/145 , H03H3/08
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which uniforms a thickness of adhesives and which is stacked so as not to vary its frequency temperature coefficient. SOLUTION: A surface acoustic wave device comprises a first substrate 101 formed with a comb-like electrode 103 and a second substrate 102 adhered to the first substrate 102 with adhesives 104. A granular inclusion 105 is contained in the adhesives 104 for adhering the first substrate 101 to the second substrate 102, thereby uniforming a thickness of the adhesives 104. This causes no variation in frequency temperature coefficient in the surface acoustic wave device.

7. 发明专利

JP2002026684A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JP2002026684A
公开(公告)日：2002-01-25
申请号：JP2000201874
申请日：2000-07-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SATOU HIROTERU , ONISHI KEIJI
IPC分类号： H03H9/145
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional surface acoustic wave element that has had a limit of combinations of substrates because a thermal stress exerted on a layered substrate may cause a defect onto the layered substrate depending on a temperature at heat treatment for the purpose of laminating a propagation substrate and an auxiliary substrate through direct bonding. SOLUTION: The surface acoustic wave element of this invention is provided with a propagation substrate 11 made of a piezoelectric substrate, an auxiliary substrate 12 layered on the propagation substrate via an adhesive layer 14, and interdigital electrodes 13 that stimulate a surface acoustic wave and is formed on a side of the propagation substrate 11 opposite to the adhesive side. Selecting a glass transition point Tg of the cured adhesive 14 for -30 deg.C or over can obtain the surface acoustic wave element with an excellent temperature characteristic and a high degree of design freedom of the temperature characteristic without changing various characteristics of the piezoelectric substrate such as an electromechanical coupling coefficient.

8. 发明专利

JP2001060846A SURFACE ACOUSTIC WAVE ELEMENT, ITS MANUFACTURING METHOD AND SURFACE ACOUSTIC WAVE DEVICE USING THE SAME 失效
公开(公告)号：JP2001060846A
公开(公告)日：2001-03-06
申请号：JP2000166359
申请日：2000-06-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONISHI KEIJI , SATOU HIROTERU , TOMITA YOSHIHIRO
IPC分类号： H03H9/25 , H03H3/08
摘要： PROBLEM TO BE SOLVED: To obtain a surface acoustic wave element which is easily handled and having little defect by forming a step part in a peripheral part at the substrate side of a multilayer substrate. SOLUTION: The surface acoustic wave element 100 is provided with the multilayer substrate 103 including the first and second substrate 101 and 102, a comb-line electrode 104 and a reflector 105. The step part 106 is formed in the peripheral part (side surface) at the side of the first substrate 101 in the multilayer substrate 103. The first substrate 101 consists of a piezoelectric material, for example a piezoelectric single crystal. Lithium niobate or a quartz crystal or the like is used as piezoelectric single crystal. Glass, silicon or a quartz or the like having the coefficient of thermal expansion being smaller than that of the first substrate 101 is used in the second substrate 102. Since the step part 106 is formed in the peripheral part at the side of the substrate 101, picking-up is executed by tweezers or a vacuum chuck or the like without touching the substrate 101.

9. 发明专利

JP2000236231A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JP2000236231A
公开(公告)日：2000-08-29
申请号：JP35326499
申请日：1999-12-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SATOU HIROTERU , ONISHI KEIJI , NANBA AKIHIKO , TAGUCHI YUTAKA , TOMITA YOSHIHIRO
IPC分类号： H03H9/25 , H03H3/08 , H03H9/145
摘要： PROBLEM TO BE SOLVED: To obtain a surface acoustic wave element which has satisfactory temperature characteristics since variance in propagation characteristics among surface acoustic waves is generated owing to unevenness in the joining strength of a substrate on its joined surface. SOLUTION: This element is equipped with a propagation substrate 11 which is a piezoelectric substrate, an auxiliary substrate 12 which is stacked on the propagation substrate 11 by direct joining, and interdigital electrodes 13, which are formed on the opposite surface of the propagation substrate 11 from the surface joined with the auxiliary substrate 12 and excite surface acoustic waves. The propagation substrate 11 and auxiliary substrate 12 are not joined together at least on the formation areas of the interdigitral electrodes 13 or right below a surface acoustic wave propagation area including the formation area of the interdigital electrodes 1 and 3, and the coefficient of thermal expansion of the auxiliary substrate 12 in the propagation direction of a surface acoustic wave is smaller than that of the propagation substrate 11.

10. 发明专利

JP2002261582A SURFACE ACOUSTIC WAVE DEVICE, ITS MANUFACTURING METHOD, AND CIRCUIT MODULE USING THE SAME 审中-公开
公开(公告)号：JP2002261582A
公开(公告)日：2002-09-13
申请号：JP2001307560
申请日：2001-10-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ONISHI KEIJI , NANBA AKIHIKO , SATOU HIROTERU , MORITOKI KATSUNORI , BESSHO YOSHIHIRO , FUJII KUNIHIRO , MURAKAMI KOZO
IPC分类号： H03H9/25 , H03H3/08
摘要： PROBLEM TO BE SOLVED: To obtain an SAW device which can be made smaller than the conventional types, and to provide its manufacturing method. SOLUTION: A surface acoustic wave device is equipped with a piezoelectric board 11, a plurality of interdigital electrodes 12 arranged on the main surface 11a for exciting surface acoustic waves, a plurality of bumps 14 arranged on the main surface 11a, and an insulating sheet 15 arranged, so as to face the main surface 11a. The bumps 14 and the interdigital electrodes 12 are electrically connected together, and the bumps 15 are provided penetrating through the insulating sheet 15.

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