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1. 发明专利

JP2003007721A Semiconductor element using polycrystalline thin film 审中-公开
标题翻译：使用多晶薄膜的半导体元件
公开(公告)号：JP2003007721A
公开(公告)日：2003-01-10
申请号：JP2001187709
申请日：2001-06-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MINO YOSHIKO , YAMAMOTO SHINICHI , NISHITANI TERU
IPC分类号： G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/20 , H01L21/336 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/08 , H05B33/10 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To reduce the leakage current of a semiconductor element using a polycrystalline thin film.
SOLUTION: The ratio of the center line mean roughness of an insulation film surface formed on a silicon film, to the thickness of a polycrystalline thin film containing silicon as a main component, is set 0.5 or less.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：减少使用多晶薄膜的半导体元件的漏电流。解决方案：将形成在硅膜上的绝缘膜表面的中心线平均粗糙度与以硅为主要成分的多晶薄膜的厚度的比率设定为0.5以下。

2. 发明专利

JP2001308070A DRY ETCHING APPARATUS AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE USING THE SAME 失效
公开(公告)号：JP2001308070A
公开(公告)日：2001-11-02
申请号：JP2000122691
申请日：2000-04-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve problems of stability of reliability in wiring-forming process and in resist-stripping process where a metal-wiring layer is corroded by residual chlorine before treating with a chemical liquid or wherein reaction products formed by the reaction between etching gas and a substance to be etched or remaining of a photoresist film cannot be removed, even by chemical-liquid cleaning in the subsequent process. SOLUTION: The photoresist film on a substrate surface is removed to clean the surface by keeping reduced pressure in an etching apparatus, and continuing to the etching treatment, performing ozone-water ashing or deionized-water ashing. The means is to spray heated and vaporized functional water, which is ozone water obtained by forcing ozone gas be contained in deionized water, or which is ozone water obtained by electrolyzing deionized water onto the substrate after the dry etching, and to execute plasma processing to remove the photoresist film on the substrate surface.

3. 发明专利

JP2000068520A SEMICONDUCTOR THIN FILM, MANUFACTURE THEREOF AND MANUFACTURING DEVICE, AND SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000068520A
公开(公告)日：2000-03-03
申请号：JP35824198
申请日：1998-12-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KURAMASU KEIZABURO , IDO MASUMI , SATANI YUJI , TAKETOMI YOSHINAO , TSUTSU HIROSHI , NISHITANI TERU , NISHITANI MIKIHIKO , GOTO SHINJI , MINO YOSHIKO
IPC分类号： H01L21/20 , G02F1/136 , G02F1/1368 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor element having high field-effect mobility and the like by enlarging the particle diameter of the silicon thin film of a polycrystalline silicon thin film. SOLUTION: After a double-layer structured insulating film comprising the material, wherein the heat conductivity of a lower insulating film 202 is contact with a transparent insulating substrate 201 is larger than the heat conductivity of an upper insulating film 203 formed on the film 202, is formed, the upper insulating film 203 is formed into the pattern in a plurality of stripes. Thereafter, a noncrystalline silicon film 204 is formed on the patterned insulating film. Furthermore, laser light is scanned and applied in parallel on the strip pattern of the upper insulating film 203. Thus, the noncrystalline silicon thin film 204 is made a polycrystalline silicon thin film 210.

4. 发明专利

JP2532496B2 失效
公开(公告)号：JP2532496B2
公开(公告)日：1996-09-11
申请号：JP19850887
申请日：1987-08-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： H01L27/15 , H01L21/58 , H01L25/16 , H01L33/44 , H01L33/48 , H01L33/00

5. 发明专利

JPH07321330A ELECTRON PART 失效
公开(公告)号：JPH07321330A
公开(公告)日：1995-12-08
申请号：JP11615994
申请日：1994-05-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO , KOBAYASHI IKUNORI
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368 , H01L21/28 , H01L21/60 , H01L29/78 , H01L29/786
摘要： PURPOSE:To prevent corrosion and disconnection of an electrode under a high temperature and high humidity by a method wherein, in an electrode connecting with other electrodes by using conductive adhesives containing conductive particles, a metal having a higher oxide potential than the reduction potential of these conductive particles is used. CONSTITUTION:In an electrode connecting with other electrodes by using conductive adhesives containing conductive particles, a metal having a higher oxide potential than a reduction potential of conductive particles is used. Particularly, when the conductive particles of conductive adhesives are composed of Ni or Au, zirconium is added to aluminum as a metal having a higher oxide potential than a reduction potential of Ni or Au and such aluminum is used as an electrode. For example, mounting electrodes 2a, 3a of a TFT array are formed with Al to which zirconium being a high melting point metal reducing a corrosion current is added. Incidently, excellent effects are exhibited in the range where content of Zr included in Al is 0.3 to 10.0%.

6. 发明专利

JPH07169967A LIQUID CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07169967A
公开(公告)日：1995-07-04
申请号：JP31628793
申请日：1993-12-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/136 , G02F1/1365 , G02F1/1368 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enhance Ti, Al, and glass in adhesion to each other and to protect Al against corrosion by a method wherein a metal film to serve as a gate electrode and another metal film to serve as a source/drain electrode are formed of a laminated film composed of Ti and Al. CONSTITUTION:A first metal laminated film composed of Ti/Al or Ti/Al/Ti to serve as a gate electrode 3 is formed on an insulating transparent substrate such as a glass substrate 1. A resist pattern is formed on the first metal laminated film, and the laminated film is patterned by gas through a dry etching method. Thereafter, the resist pattern is removed by resist-dedicated release agent. At this point, a TAB mounting electrode 3a on a gate side is led out to the end of the extension of a gate wiring and arranged by the same gate material. As mentioned above, the gate electrode 3 is formed of a laminated layer of Ti/Al, whereby Al, can be enhanced in adhesion to glass by a first Ti layer. Glass can be protected against etching when a gate electrode is processed, and a transistor section can be protected against contamination caused by a glass substrate 1.

7. 发明专利

JPH0764108A SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH0764108A
公开(公告)日：1995-03-10
申请号：JP20971193
申请日：1993-08-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO , KOBAYASHI IKUNORI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To prevent the exposure of an Al film to a resist developer by an insulating protective film serving as protection at the time of working a source- drain film by forming source-drain electrodes into a laminated structure of a metallic layer and insulating layer. CONSTITUTION:The Al film is patterned and formed as gate electrodes 2 on one main plane of a transparent substrate 1 and a semiconductor layer is so formed as to overlap on a part of the gate electrodes via an insulating thin-film layer 3. An ITO film is then patterned and formed as pixel electrodes 4. A laminated layer 5a of Ti and Al as a metallic film and an SiNx film as an insulating film 6 are thereafter laminated and formed and are patterned and formed to obtain the source-drain electrodes 5. A TFT array substrate 7 is completed in such a manner. The gate insulating thin film 3 is preferably made to remain on the gate drawing out electrodes at this time. The metallic film 5a and the insulating film 6 are formed as the source-drain electrodes in such a manner, by which the insulating film 6 is acted as the protective film at the time of processing the source-drain film and the exposure of the Al to the resist developer is prevented.

8. 发明专利

JPH03196122A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH03196122A
公开(公告)日：1991-08-27
申请号：JP33712589
申请日：1989-12-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/133 , G09F9/00
摘要： PURPOSE:To eliminate an uneven display at the left part and the right part of a screen caused by uneven illuminance by bending an end part of a fluorescent tube used for a backlight device, and placing the part in which the uneven illuminance is generated in the outside of a display area of a liquid crystal panel. CONSTITUTION:As for a fluorescent tube 4b, the vicinity of an electrode part 10 of the tip is bent, and by placing a conventional uneven illuminance generating area in the outside of panel display areas ABCD, uneven illuminance 12 is illuminated. Also, the fluorescent tube 4b is placed so as to have an intersection angle 20 against the scanning signal wiring direction 16 of the liquid crystal panel. This intersection angle 20 is set to

9. 发明专利

JPH02150822A MATRIX DEVICE 失效
公开(公告)号：JPH02150822A
公开(公告)日：1990-06-11
申请号：JP30491288
申请日：1988-12-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H03K17/00
摘要： PURPOSE:To prevent a line defect from occurring by employing double structure for signal transmission paths of 1st and 2nd wires in the device having a matrix operation part where the 1st wire group and 2nd wire group cross each other. CONSTITUTION:The double structure consists of a 3rd wire group 4 and a 4th wire group 9 provided with the 1st wire group 1 and 2nd wire group 2 across insulation films 7 respectively. Therefore, a signal can be transmitted from the 3rd and 4th wires 4 and 9 if a 1st wire 1 is broken or the 4th wire 9 if the 2nd wire is broken. Consequently, the occurrence of a line defect can be suppressed.

10. 发明专利

JPH01107518A VAPOR GROWTH METHOD 失效
公开(公告)号：JPH01107518A
公开(公告)日：1989-04-25
申请号：JP26450387
申请日：1987-10-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINO YOSHIKO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To form a film with good reproducibility by providing a discharge amount control line in a discharge line in case of switching a reaction gas supply line to a purge gas supply line, thereby setting the gas discharge amount and gas conditions of a step of extracting gas in a reaction tube of previous step of vapor growth to the same as those of the step of vapor growth. CONSTITUTION:In purge gas lines 3, 3A, 3B, purge gases 2 controlled by flowrate controllers 1 flow to a reaction tube 5 which is reduced under pressure by a gas discharge system 4, and is discharged through a discharge line 6 to a discharge (I). In this case, in the first purge, the pressure is high due to a large quantity of purge gas flowing from two systems, is then reduced in quantity to one system, discharge amount is further suppressed by the operation of a discharge control line, and regulated substantially to the same conditions as those of a step of vapor growth. Then, the purge line is turned OFF, the gas in the tube is extracted, but since the pressure is reduced in the second purge, the time of gas extraction is shortened, and pressure change due to the introduction of reaction gas is reduced, thereby forming a film with good reproducibility.

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