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1. 发明专利

JP2006189419A Manufacturing method of standard calibrated leak 有权
标题翻译：标准校准泄漏的制造方法
公开(公告)号：JP2006189419A
公开(公告)日：2006-07-20
申请号：JP2005302127
申请日：2005-10-17
申请人： Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi , Qinghua Univ , ツィンファユニバーシティ , 鴻富錦精密工業(深▲セン▼)有限公司
发明人： LIU LIANG , TANG JIE , RYU HO , KO SHOFUKU , DU BING-CHU , KAKU SAIRIN , CHIN HIKIN , GE SHUAI-PING , FAN FENG-YAN
IPC分类号： G01M3/20 , B82B3/00
CPC分类号： C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a standard calibrated leak. SOLUTION: The manufacturing method of the standard calibrated leak comprises a step of preparing a substrate; a step of forming a thin film as a catalyst having a predetermined pattern on the substrate; a step of growing a one-dimensional nano structure of a predetermined dimension and the number of divisions in the catalyst layer; a step of forming a second thin film on the substrate in which the one-dimensional nano structure is grown; and a step of removing the one-dimensional nano structure on the second thin film, forming a permeation hole of the same dimension as that of the one-dimensional nano structure in the second thin film, and forming the standard calibrated leak. The leak amount is determined sufficiently by the standard calibrated leak, so that problems of the conventional art can be solved. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供标准校准泄漏的制造方法。标准校准泄漏的制造方法包括准备衬底的步骤; 在衬底上形成具有预定图案的催化剂的薄膜的步骤; 生长预定尺寸的一维纳米结构和催化剂层中的分割数的步骤; 在其上生长一维纳米结构的基板上形成第二薄膜的步骤; 以及去除第二薄膜上的一维纳米结构的步骤，形成与第二薄膜中的一维纳米结构相同尺寸的渗透孔，并形成标准校准的泄漏。通过标准校准的泄漏充分确定泄漏量，从而可以解决现有技术的问题。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006242938A Standard calibrated leak and method for manufacturing the same 有权
标题翻译：标准校准泄漏及其制造方法
公开(公告)号：JP2006242938A
公开(公告)日：2006-09-14
申请号：JP2005353745
申请日：2005-12-07
申请人： Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi , Qinghua Univ , ツィンファユニバーシティ , 鴻富錦精密工業(深▲セン▼)有限公司
发明人： LIU LIANG , GE SHUAI-PING , KO SHOFUKU , DU BING-CHU , KAKU SAIRIN , CHIN HIKIN , FAN FENG-YAN
IPC分类号： G01M3/20
CPC分类号： G01M3/007
摘要： PROBLEM TO BE SOLVED: To provide standard calibrated leak and a method for manufacturing the same.
SOLUTION: The standard calibrated leak includes a first substrate and a second substrate formed on the first substrate, wherein a groove, having a prescribed number of divisions and a dimension is formed on a joining surface of at least one substrate to the other substrate. When both the substrates are jointed, the groove is formed as a common hole. A material, where gases cannot pass through, used for the wall of the hole. The angle β, defined by a plane on which an intersection line of both the slopes of the groove, is positioned and one of the slopes is made the same as the angle of field of the crystal face of the substrate on which the groove is formed. The diameter of the thus formed hole reaches nano level. Accordingly, the standard calibrated leak is superior, in controlling the amount of leak in a fine range satisfactorily. The method for manufacturing the standard calibrated leak is also provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供标准校准泄漏及其制造方法。解决方案：标准校准的泄漏包括形成在第一基板上的第一基板和第二基板，其中在至少一个基板的接合表面上形成具有规定数量的分隔和尺寸的凹槽基质。当两个基板接合时，凹槽形成为公共孔。气体不能通过的材料用于孔壁。由沟槽的两个斜面的交线和其一个斜面之间的平面所定义的角度β与形成有槽的基板的晶面的角度相同。这样形成的孔的直径达到纳米级。因此，标准校准的泄漏优良，令人满意地控制精密范围内的泄漏量。还提供了制造标准校准泄漏的方法。版权所有（C）2006，JPO＆NCIPI

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