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1. 发明专利

JP2014005517A Target joined body 有权
标题翻译：目标加入体
公开(公告)号：JP2014005517A
公开(公告)日：2014-01-16
申请号：JP2012143497
申请日：2012-06-26
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUMURA HITOMI , NAKANE YASUO
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a target joined body that can have a thin film formed with a uniform thickness by preventing irregularity in formed film thickness in a plane when performing film deposition through sputtering using a Cu-Mn alloy sputtering target.SOLUTION: A target joined body includes a sputtering target, a backing plate, and a brazing filler metal, and a reverse surface of the sputtering target is joined with the backing plate with the brazing filler metal. The sputtering target is a Cu-Mn alloy containing Mn by 2-30 atom%, and the total of area of projection of porosity present in the brazing filler metal on the reverse surface of the sputtering target is 16% or less of the area of the whole joining region on the reverse surface of the sputtering target.
摘要翻译：要解决的问题：提供一种目标接合体，其能够通过使用Cu-Mn合金溅射靶通过溅射进行膜沉积，防止在平面中形成的膜厚度的不规则性而形成均匀厚度的薄膜。解决方案：A 靶接合体包括溅射靶，背板和钎料，并且溅射靶的背面与钎焊料与背板接合。溅射靶是含有2-30原子％的Mn的Cu-Mn合金，存在于溅射靶的反面上的钎料中的孔隙的投影面积的总和为16％以下溅射靶的反面上的整个接合区域。

2. 发明专利

JP2004307906A Sputtering target, and method for manufacturing the same 有权
公开(公告)号：JP2004307906A
公开(公告)日：2004-11-04
申请号：JP2003100782
申请日：2003-04-03
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUMURA HITOMI , YONEDA YOICHIRO
IPC分类号： B23K20/22 , C23C14/34
CPC分类号： B23K20/22 , C23C14/3407 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a very large sputtering target obtained by butt-welding metal plates of the same quality in which the grain size and the dispersed state of metal crystals and intermetallic compounds are substantially equal between a welded zone and a non-welded zone.
SOLUTION: The mean grain size of intermetallic compounds of a welded zone is 60-130% of the mean grain size of intermetallic compounds of a non-welded zone.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2014019930A Target assembly 有权
标题翻译：目标集会
公开(公告)号：JP2014019930A
公开(公告)日：2014-02-03
申请号：JP2012162125
申请日：2012-07-20
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： OCHI MOTOTAKA , HATAKE HIDEO , MATSUMURA HITOMI
IPC分类号： C23C14/34 , H01L21/203 , H01L21/363 , H01L29/786
CPC分类号： C23C14/3407 , H01J37/3411 , H01J37/3414 , H01J37/3426 , H01J37/3435 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a target assembly, in which a plurality of oxide target members are arranged at intervals on a backing plate with a bonding material being placed between the plate and the members, capable of preventing deterioration of TFT properties (in particular a decrease in ON-state current and an increase in SS value) when sputtering is performed using the target assembly, even if contamination occurs in a formed thin oxide film due to the constituents of the backing plate being mixed in through the gaps between the target members.SOLUTION: A target assembly according to the present invention comprises: a lining member, which is placed between an oxide target members and a backing plate in such a manner that intervals are covered with the lining member, and which is composed of one, two or more selected from a group consisting of Ni, Si, Hf and Ta.
摘要翻译：要解决的问题：为了提供一种目标组件，其中多个氧化物靶构件间隔布置在背板上，其中接合材料被放置在板和构件之间，能够防止TFT性能的劣化（特别是即使在使用目标组件进行溅射时导通状态电流的降低和SS值的增加），即使由于背板的成分通过目标物之间的间隙混合而形成的薄氧化膜中发生污染构件。根据本发明的目标组件包括：衬里构件，其被布置在氧化物靶构件和背板之间，使得间隔被衬里构件覆盖，并且由衬垫构件组成，选自由Ni，Si，Hf和Ta组成的组中的两种或更多种。

4. 发明专利

JP2010265544A Cu-Ga ALLOY SPUTTERING TARGET AND PROCESS FOR MANUFACTURING THEREOF 有权
标题翻译： Cu-Ga合金溅射靶材及其制造方法
公开(公告)号：JP2010265544A
公开(公告)日：2010-11-25
申请号：JP2010061280
申请日：2010-03-17
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUMURA HITOMI , NANBU AKIRA , TOKUHIRA MASAYA , OKAMOTO SHINYA
IPC分类号： C23C14/34 , B22F3/15 , B22F9/08 , C22C9/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0425 , C22C9/00 , B22F9/082 , C23C14/34 , B22F3/15
摘要： PROBLEM TO BE SOLVED: To provide a Cu-Ga alloy sputtering target which enables the formation of a Cu-Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. SOLUTION: There is disclosed a Cu-Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less. COPYRIGHT: (C)2011,JPO&INPIT

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