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1. 发明专利

JP2003035700A Charged particle analysis apparatus and manufacturing method thereof, and charged particle analysis method using the charged particle analysis apparatus 审中-公开
标题翻译：充电颗粒分析装置及其制造方法，以及使用充电颗粒分析装置的充电颗粒分析方法
公开(公告)号：JP2003035700A
公开(公告)日：2003-02-07
申请号：JP2001223544
申请日：2001-07-24
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KINOSHITA TAKASHI , FUKUMOTO YOSHITO , YAMASHITA MOTOHARU , INOUE KENICHI
IPC分类号： G01N27/68 , C23C16/50 , H01J9/14 , H01J49/48 , H01L21/302 , H01L21/3065 , H05H1/00
摘要： PROBLEM TO BE SOLVED: To provide a charged particle analysis apparatus that measures the energy of charged particles that enter a substrate within a plasma treatment apparatus, is accurate and durable, has a withstand voltage of 1 kV or larger between electrodes, and has a strength for withstanding irradiation with plasma for a long time, a manufacturing method that can accurately align each electrode without using any semiconductor processes, and can manufacture the charged particle analysis apparatus easily at low costs, and an analysis method of charged particles using the charged particle analysis apparatus.
SOLUTION: After an electrode plate 11, an insulating board 12, an electrode board 21, and an insulating board 22 are overlapped and bonded, a hole section 41 is formed for bonding the electrode board 31 and the insulating board 32. The electrode board is as thick as 1 μm or more, and the insulating board is as thick as 10 μm or more. The electrode board 11 is set to be at the same potential as a silicon wafer 51, the electrode board 21 is set to be at negative potential and the electrode board 31 is set to be at positive potential to the electrode board 11, and a charged particle current is measured by the electrode board 31.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供一种测量进入等离子体处理装置内的基板的带电粒子的能量的带电粒子分析装置，其精度和耐久性在电极之间具有1kV以上的耐电压，并且具有强度为了耐久地等离子体照射，可以在不使用任何半导体工艺的情况下精确对准每个电极的制造方法，并且可以以低成本容易地制造带电粒子分析装置以及使用带电粒子分析的带电粒子的分析方法仪器。解决方案：在电极板11，绝缘板12，电极板21和绝缘板22重叠接合之后，形成用于接合电极板31和绝缘板32的孔部分41.电极板是厚度为1μm以上，绝缘板厚度为10μm以上。将电极板11设定为与硅晶片51相同的电位，将电极基板21设定为负电位，将电极基板31设定为电极板11的正电位，颗粒电流由电极板31测量。

2. 发明专利

JP2007067453A Method for etching diamond 有权
标题翻译：蚀刻钻石的方法
公开(公告)号：JP2007067453A
公开(公告)日：2007-03-15
申请号：JP2006333655
申请日：2006-12-11
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for etching a carbon-based material, which does not require heating in particular, and keeps very excellent flatness and mask selection ratio, and can obtain a shape faithful to the shape of a mask and a high etching rate.
SOLUTION: While covering regions on a diamond except for the region to be etched with a mask made of a Si oxide, and applying to a negative electrode the high frequency potential of ≥500 V, preferably ≥1,000 V, with reference to a counter electrode or a reaction container, etching of the diamond is performed by exposing the diamond to a plasma generated from O
2 , Ar or a mixed gas of O
2 and Ar.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种不需要特别加热的碳基材料的蚀刻方法，并且保持非常优异的平坦度和掩模选择比，并且可以获得忠实于掩模形状的形状和高蚀刻速率。解决方案：除了用Si氧化物掩模蚀刻的区域外的金刚石覆盖区域，并且向负极施加≥500V，优选≥1000V的高频电位，参考对电极或反应容器，通过将金刚石暴露于由O 2 SB，Ar或O SB 2和/或SB 2的混合气体产生的等离子体，进行金刚石的蚀刻。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2002368055A Semiconductor device for evaluating damage and method for evaluating damage 审中-公开
标题翻译：用于评估损害的半导体器件和评估损害的方法
公开(公告)号：JP2002368055A
公开(公告)日：2002-12-20
申请号：JP2001177688
申请日：2001-06-12
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KINOSHITA TAKASHI , FUKUMOTO YOSHITO
IPC分类号： H01L21/66 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for evaluating damage and a method for evaluating damage in which the absolute values of a potential and a current can be measured simultaneously in off-line at the time of plasma exposure for predicting the damage by charge up on an actual semiconductor device.
SOLUTION: A gate oxide film 3 and a field insulation film 2 having a thick film region 2a and a thin film region 2b are formed on the surface of a silicon wafer 1 and an upper electrode 4 is formed to float electrically across them. The silicon wafer 1, the gate oxide film 3 and the upper electrode 4 constitute an MOS capacitor 11. A part of the upper electrode 4 is extended from the thick film region 2a of the field insulation film 2 in the direction opposite to the gate oxide film 3 and held in a cavity above the thin film region 2b to form a cantilever 4a. The silicon wafer 1, the thin film region 2b and the cantilever 4a constitute a voltage storage element 12.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供用于评估损伤的半导体器件和评估损伤的方法，其中可以在等离子体暴露时在离线时同时测量电位和电流的绝对值以预测电荷损害在实际的半导体器件上。解决方案：在硅晶片1的表面上形成具有厚膜区域2a和薄膜区域2b的栅极氧化膜3和场绝缘膜2，并且形成上电极4，以使电极跨越它们。硅晶片1，栅氧化膜3和上电极4构成MOS电容器11.上电极4的一部分从场绝缘膜2的厚膜区域2a向与栅极氧化物相反的方向延伸膜3并保持在薄膜区域2b上方的空腔中以形成悬臂4a。硅晶片1，薄膜区域2b和悬臂4a构成电压存储元件12。

4. 发明专利

JP2003121343A DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003121343A
公开(公告)日：2003-04-23
申请号：JP2001319246
申请日：2001-10-17
申请人： KOBE STEEL LTD
发明人： KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI
IPC分类号： G01N27/12 , G01N19/10 , G01N27/04
摘要： PROBLEM TO BE SOLVED: To provide a detector whose selectivity of a substance to be detected is high and by which various substances can be detected with high sensitivity, and to provide a method of manufacturing the detector with satisfactory efficiency. SOLUTION: A beamlike member 3 composed of n-type polysilicon is installed on a silicon substrate 2. The beamlike member 3 is composed of a beam 3a and two bases 3b which support the beam 3a in a center beamlike shape. A porous silica thin film 4 is formed on the beamlike member 3. The porosity of the film 4 is set at 50%, and its means pore diameter is set at 50 nm. Contact holes 5 to the bases 3b are formed in the film 4, and the bases 3b are connected to a resistance measuring device. Consequently, ethanol molecules are adsorbed to pores in the film 4, the film 4 is swollen, a force is applied to the beamlike member 3, an the electrical resistance value of the beamlike member 3 is changed due to a piezoresistance effect. When the electrical resistance value is measured, ethanol can be detected.

5. 发明专利

JP2002105623A CARBON ONION THIN FILM AND MANUFACTURING METHOD 失效
公开(公告)号：JP2002105623A
公开(公告)日：2002-04-10
申请号：JP2000294996
申请日：2000-09-27
申请人： KOBE STEEL LTD
发明人： IWAMURA EIJI , KINOSHITA TAKASHI
IPC分类号： C01B31/02 , C23C14/06 , C23C14/35 , C30B23/02
摘要： PROBLEM TO BE SOLVED: To provide a carbon onion thin film constituted of giant fullerene clusters having onion structure. SOLUTION: The carbon onion thin film is composed essentially of carbon and has at least >=20 nm film thickness and clusters with onion structure, to be concrete, the carbon onion thin film satisfies the above requirements and further satisfies either of the following conditions: at least >=20 pieces of clusters of at least >=4 nm diameter having onion structure are contained in 0.001 μm2; the proportion of clusters having onion structure in a matrix is at least >=50 vol.%.

6. 发明专利

JP2002075960A METHOD OF ETCHING CARBONIC MATERIAL 失效
公开(公告)号：JP2002075960A
公开(公告)日：2002-03-15
申请号：JP2000255682
申请日：2000-08-25
申请人： KOBE STEEL LTD
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching material for carbonic material, which can keep extremely excellent flatness and mask selection ratio without needing special heating, and can get form loyal to the mask form and high etching speed. SOLUTION: The region excluding the section to be etched on a diamond is covered with a mask consisting of an Si oxide, and high frequency potential of 500 V or over, preferably, 1000 V or over is applied to a cathode, on the basis of a counter electrode or a reactor, and the diamond is exposed to the plasma produced from O2, Ar, or mixed gas between O2 and Ar so as to etch the diamond.

7. 发明专利

JP2002033302A SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING DEVICE FOR THIN-FILM STRUCTURE 失效
公开(公告)号：JP2002033302A
公开(公告)日：2002-01-31
申请号：JP2000217376
申请日：2000-07-18
申请人： KOBE STEEL LTD
发明人： FUKUMOTO YOSHITO , KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI , SUZUKI KOHEI
IPC分类号： B81C1/00 , F26B7/00 , F26B9/06 , F26B21/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a supercritical drying method and a supercritical drying device for a thin-film structure, by which the quantity of a solvent, in which a thin-film structure is dipped in a pressure vessel for the supercritical drying device is made smaller than in the case of the conventional supercritical drying method, while the extraction time of the solvent is made shorter and the throughput of drying treatment can be improved. SOLUTION: In the supercritical drying method for the thin-film structure, the thin-film structure, dipped into the solvent in a small vessel, is dried in the pressure vessel for the supercritical drying device. In the supercritical drying device for the thin-film structure, the small vessel, where the solvent in which the thin-film structure is dipped into is held, is positioned in the pressure vessel for the supercritical drying device.

8. 发明专利

JP2001060575A SUPERCRITICAL DRYER 失效
公开(公告)号：JP2001060575A
公开(公告)日：2001-03-06
申请号：JP23438799
申请日：1999-08-20
申请人： KOBE STEEL LTD
发明人： FUKUMOTO YOSHITO , NAGASE YOSHIYUKI , KINOSHITA TAKASHI , SUZUKI KOHEI , INOUE KENICHI , SAKASHITA YOSHIHIKO
IPC分类号： H01L21/304 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To reduce the heat capacity of a supercritical medium container, and at the same time, to facilitate maintaining of pressure in the container relatively easily by positioning the container in an external container and controlling the pressure in the container via the pressure in the external container. SOLUTION: A supercritical medium container 10, containing an object 8 to be treated and a medium 7 is positioned in an external container 11, and the container 11 is sealed hermetically. When nitrogen gas is fed into the container 11 under pressure from a cylinder 13 by opening a flow control valve 14 thereafter, a pressure-regulating valve 16a is opened, and the inside of the container 10 is pressurized. When the internal temperature of the container 10 is successively raised by means of an induction coil 18a, the internal pressure of the container 10 becomes higher than that of the container 11, and a medium exhaust valve 16b is opened and the medium 7 is recovered to a recovering container 17a. Then the inside of the container 10 becomes a supercritical state, and supercritical drying progresses. When the nitrogen gas is discharged by opening an exhaust valve 15 thereafter, the exhaust valve 16b is opened, and the medium 7 is recovered. Then, after the container 10 is cooled by making dry nitrogen gas to flow through the container 10, the container 10 is taken out of the container 11, the object 8 is taken out of the container 10.

9. 发明专利

JPH07320895A PLASMA TREATING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH07320895A
公开(公告)日：1995-12-08
申请号：JP10958594
申请日：1994-05-24
申请人： KOBE STEEL LTD
发明人： NISHIZUKA TETSUYA , NOZAWA TOSHIHISA , KINOSHITA TAKASHI
IPC分类号： H05H1/46 , C23C14/54 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To apply a plasma treating process of high repeatability and stability by measuring the electron density of plasma on a real time basis and controlling high-frequency voltage on the basis of the measured electron density of plasma. CONSTITUTION:First, the output of a microwave power supply 10 is changed with the output voltage of a high-frequency power supply 13 kept constant, thereby changing electron density in plasma. Then, while the electron density in plasma is being measured, voltage on the surface of a sample 2 is measured with an electrode mounted thereon. Thereafter, from the result of the measurement, a chart for voltage versus electron density applied to a wafer is obtained. On the basis of data obtained from the measurement, the chart is processed into a new chart for high-frequency output voltage versus electron density. As a result, once the voltage of the sample 2 is specified, a computer 20 as an electron density operation means and a high-frequency voltage control means in common corrects output voltage, so as to correspond to the change of electron density calculated on a real time basis, and controls the high-frequency power supply 13, so as to keep the voltage of the sample 2 constant.

10. 发明专利

JPH07142196A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH07142196A
公开(公告)日：1995-06-02
申请号：JP28798393
申请日：1993-11-17
申请人： KOBE STEEL LTD
发明人： KINOSHITA TAKASHI , NOZAWA TOSHIHISA
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To stably generate the plasma having a uniform density distribution in a large area without enlarging a device. CONSTITUTION:A dielectric substance 27 having a refraction factor larger than the refraction factor in vacuum is filled between the microwave introduction window 22 and the plasma generation region of a vacuum container 21. The distance that the microwaves introduced through a prescribed opening diameter are propagated to the plasma generation region having a required area at a uniform power density is decreased in response to the refraction factor of the dielectric substance 27. The capacity of the vacuum container 21 required to form the plasma generation region having the same area can be reduced. Microwaves are propagated in the dielectric substance 27 and reach the plasma generation region, thus microwaves are not affected by plasma, and a uniform power density distribution is stably obtained.

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