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    • 2. 发明专利
    • Device for centering rolling line and method for measuring off-center
    • 用于中心滚动线的装置和用于测量偏心的方法
    • JP2006055861A
    • 2006-03-02
    • JP2004237489
    • 2004-08-17
    • Kobe Steel Ltd株式会社神戸製鋼所
    • YONEDA YASUSHITAKAOKA KATSUYA
    • B21B31/20B21C51/00G01B11/00
    • PROBLEM TO BE SOLVED: To provide a device and a method which enable centering of a rolling line and measurement of an off-center by using a laser beam source and a photodetector by correctly detecting the position of the centroid of a laser beam without causing any lacking of the laser beam.
      SOLUTION: The centering is performed by arranging a laser beam projector part 2 providing with a irradiation direction adjusting means 2b in the middle part between the inlet side and the outlet side of the rolling line after preliminarily adjusting the optical axis so that the irradiation of the laser beam is performed on the same axis in the directions of the inlet side and outlet side of the rolling line, arranging the photodetectors 3a, 3b at the reference points on the inlet side and the outlet side along the center axis CL of the rolling line and applying the laser beam in order from the laser light projector part 2 to the photodetectors 3a, 3b by the irradiation direction adjusting means 2b. Then, since the propagated distance of the laser beam becomes a half, the extent of the laser beam is reduced by half, the lacking of the laser beam is not caused and the precision of detection precision (centering precision) of the position of the centroid of the intensity of the laser beam is enhanced.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够通过使用激光束源和光电检测器正确检测激光束的质心的位置来实现轧制线对中和偏心测量的装置和方法 而不会导致任何缺乏激光束。 解决方案:通过在预先调整光轴之后,通过布置在轧制线的入口侧和出口侧之间的中间部分设置照射方向调节装置2b的激光束投射器部分2来进行定心,使得 沿着轧制线的入口侧和出口侧的方向在相同的轴上进行激光束的照射,将光电检测器3a,3b沿着中心轴线CL的入口侧和出口侧的基准点 轧制线并且通过照射方向调节装置2b从激光投射器部分2依次施加到光电检测器3a,3b。 然后,由于激光束的传播距离变为一半,所以激光束的面积减少一半,不会导致缺少激光束,并且质心的位置的检测精度(定心精度)精度 激光束强度的增强。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Connection apparatus
    • 连接装置
    • JP2003004769A
    • 2003-01-08
    • JP2001190376
    • 2001-06-22
    • Genesis Technology KkKobe Steel Ltdジェネシス・テクノロジー株式会社株式会社神戸製鋼所
    • GOTO YASUSHIHIRANO TAKAYUKIICHIHARA CHIKARAYONEDA YASUSHI
    • G01R31/26G01R1/073H01L21/66
    • PROBLEM TO BE SOLVED: To provide a connection apparatus, that can be surely connected to a fine pattern having a narrow pitch, which is inexpensive, and can readily improve throughput.
      SOLUTION: Since a metal small-gauge wire 5 is provided in the horizontal direction in a groove 2 as a probe pin, its positioning can be made in a self- alignment manner. A number of grooves 2 can be formed with a narrow pitch by a fine machining technique, called a well-known micromachining method, thus arranging a number of metal small-gauge wires 5 with a narrow pitch. As a result, narrowing of the pitch of a contact pad in a semiconductor device to be measured can be fully coped with. Additionally, since the positioning of the metal small-gauge wires 5 can be made in a self alignment manner, the positioning is very easy without requiring special needs for a high technique, thus inhibiting cost increase and eliminating the need for accurate machining in a probe board, which conventionally has required high accuracy.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种连接装置,其可以可靠地连接到廉价的窄间距的精细图案,并且可以容易地提高生产量。 解决方案:由于金属小规格金属线5在作为探针的槽2中沿水平方向设置,因此可以以自对准的方式进行定位。 可以通过称为公知的微加工方法的精细加工技术,以窄的间距形成多个槽2,从而配置多个窄间距的金属小规格钢丝5。 结果,可以完全应对待测半导体器件中的接触焊盘的间距变窄。 此外,由于能够以自对准的方式定位金属小规格金属线5,所以定位非常容易,而不需要高技术的特殊需要,因此抑制成本增加并且消除了在探针中精确加工的需要 板,其通常要求高精度。
    • 4. 发明专利
    • SHAPE MEASURING APPARATUS
    • JP2001241923A
    • 2001-09-07
    • JP2000053591
    • 2000-02-29
    • KOBE STEEL LTD
    • YONEDA YASUSHIMORIMOTO TSUTOMUTAKAHASHI EIJI
    • G01B9/02G01B11/06H01L21/66
    • PROBLEM TO BE SOLVED: To provide a shape measuring apparatus capable of measuring the thickness distribution of a wafer at a high accuracy, independent of the plane shape of a reference plane. SOLUTION: Optical measuring systems 10, 20 are opposed on both sides of a wafer 1. An interference fringe image formed with a wafer main surface 1a and a reference plane 15, obtained by a photodetector 16 an interference fringe image formed with a wafer backside 1b and a reference plane 25, obtained a photodetector 26 and an interference fringe image obtained by receiving reflected lights on the reference planes 15, 25 with the wafer 1 removed, using e.g. the photodetector 16, are inputted to an arithmetic unit 17' which obtains the wafer thickness distribution T according to T=Lt-La-Lb, based on the distance La between the reference plane 15 and the wafer main surface 1a, the distance Lb between the reference plane 25 and the waver backside 1b, and the distance Lt between the reference planes 15, 25, obtained from the three interference fringe images. The thickness distribution T does not depend on the plane shape of the reference plane and hence can be measured at a high accuracy, not depending on the plane shape of the reference plane.