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1. 发明专利

JP2003004769A Connection apparatus 审中-公开
标题翻译：连接装置
公开(公告)号：JP2003004769A
公开(公告)日：2003-01-08
申请号：JP2001190376
申请日：2001-06-22
申请人： Genesis Technology Kk , Kobe Steel Ltd , ジェネシス・テクノロジー株式会社 , 株式会社神戸製鋼所
发明人： GOTO YASUSHI , HIRANO TAKAYUKI , ICHIHARA CHIKARA , YONEDA YASUSHI
IPC分类号： G01R31/26 , G01R1/073 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a connection apparatus, that can be surely connected to a fine pattern having a narrow pitch, which is inexpensive, and can readily improve throughput.
SOLUTION: Since a metal small-gauge wire 5 is provided in the horizontal direction in a groove 2 as a probe pin, its positioning can be made in a self- alignment manner. A number of grooves 2 can be formed with a narrow pitch by a fine machining technique, called a well-known micromachining method, thus arranging a number of metal small-gauge wires 5 with a narrow pitch. As a result, narrowing of the pitch of a contact pad in a semiconductor device to be measured can be fully coped with. Additionally, since the positioning of the metal small-gauge wires 5 can be made in a self alignment manner, the positioning is very easy without requiring special needs for a high technique, thus inhibiting cost increase and eliminating the need for accurate machining in a probe board, which conventionally has required high accuracy.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种连接装置，其可以可靠地连接到廉价的窄间距的精细图案，并且可以容易地提高生产量。解决方案：由于金属小规格金属线5在作为探针的槽2中沿水平方向设置，因此可以以自对准的方式进行定位。可以通过称为公知的微加工方法的精细加工技术，以窄的间距形成多个槽2，从而配置多个窄间距的金属小规格钢丝5。结果，可以完全应对待测半导体器件中的接触焊盘的间距变窄。此外，由于能够以自对准的方式定位金属小规格金属线5，所以定位非常容易，而不需要高技术的特殊需要，因此抑制成本增加并且消除了在探针中精确加工的需要板，其通常要求高精度。

2. 发明专利

JPH11166907A STANDARD WAFER FOR MEASURING LIFETIME 失效
公开(公告)号：JPH11166907A
公开(公告)日：1999-06-22
申请号：JP33259797
申请日：1997-12-03
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： HASHIZUME HIDEHISA , HASEGAWA KIYOSHI
IPC分类号： G01N22/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a calibration standard stable for a long period by subjecting the back surface of an optical pulse irradiation surface to surface recombination accelerating treatment to speed up the surface recombining speed, and setting the lifetime of a carrier to a predetermined value according to the thickness of a semiconductor. SOLUTION: The back surface 6 of an optical pulse irradiation surface 5 is subjected to surface recombination acceleration treatment without the formation of an oxide film to suppress surface recombination, A standard wafer 0 for measuring lifetime is irradiated with optical pulses 1 to generate a carrier C on its surface. As the surface recombining speed of the optical pulse irradiation surface 5 is delayed by the formation of a silicon oxide film 8. the majority of the carrier C is diffused to the inside 9 of the wafer 0. The diffused carrier C is recombined according to bulk lifetime and gradually disappears. When the carrier C reaches the side of the back surface 6, the carrier C is captured in the lattice irregular part 7 of silicon molecules, is immediately recombined, and disappears. In addition, the thickness of a silicon wafer is changed to set the lifetime of the standard wafer 0 to a predetermined value.

3. 发明专利

JP2003057311A Device for inspecting electric connection 有权
标题翻译：检查电气连接的装置
公开(公告)号：JP2003057311A
公开(公告)日：2003-02-26
申请号：JP2001247960
申请日：2001-08-17
申请人： Genesis Technology Kk , Kobe Steel Ltd , ジェネシス・テクノロジー株式会社 , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , GOTO YASUSHI , YONEDA YASUSHI , IWAMURA EIJI , TAKEUCHI SUSUMU
IPC分类号： G01R31/26 , G01R1/073 , G01R31/28 , H01L21/66 , H05K3/00
CPC分类号： G01R1/07307
摘要： PROBLEM TO BE SOLVED: To provide an electric connection inspection device having micro-fine structure excellent in durability, to which an electrode material is hardly deposited and flocculated, without worsening a degree of freedom for selection of using materials in view point of restriction in a product function accompanied to aplitudes of an electric characteristic such as an electric resistance and a physical property such as an internal stress, and restriction in production such as the propriety of using a plating method. SOLUTION: In this electric connection inspection device having a plurality of contact terminals and for contacting electrically with an inspection object to input and output signals, a coating film of the second layer having 1×10 Ωcm or less of specific resistance and having a Young's modulus higher than that of a wiring base material layer is formed on a surface of the wiring base material layer positioned in a tip part of the contact terminal, and a coating film of the third layer having a low flocculating property is formed further on a surface of the second layer.
摘要翻译：要解决的问题：提供一种具有优异耐久性的微细结构的电连接检查装置，电极材料几乎不沉积和絮凝，而不会因为限制的观点而使用材料的选择自由度恶化产品功能伴随着诸如电阻等电气特性和诸如内部应力的物理性质的限制，以及使用电镀方法的适当性等的制造功能。解决方案：在这种具有多个接触端子并用于与检查对象电接触以输入和输出信号的电气连接检查装置中，第二层的涂膜具有1×10 -4Ωcm以下的电阻率，在布线基材层的位于接触端子的前端部的表面上形成具有比布线基材层的杨氏模量高的杨氏模量，并且形成具有低絮凝性的第三层的涂膜在第二层的表面上。

4. 发明专利

JP2003057310A Device for inspecting electric connection 审中-公开
标题翻译：检查电气连接的装置
公开(公告)号：JP2003057310A
公开(公告)日：2003-02-26
申请号：JP2001247959
申请日：2001-08-17
申请人： Genesis Technology Kk , Kobe Steel Ltd , ジェネシス・テクノロジー株式会社 , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , GOTO YASUSHI , YONEDA YASUSHI , IWAMURA EIJI , TAKEUCHI SUSUMU
IPC分类号： G01R31/26 , G01R1/073 , G01R31/28 , H01L21/66 , H05K3/00
摘要： PROBLEM TO BE SOLVED: To provide an electric connection inspection device having micro-fine structure excellent in durability, without worsening a degree of freedom for selection of using materials in view point of restriction in a product function accompanied to aptitudes of an electric characteristic such as an electric resistance and a physical property such as an internal stress, and restriction in production such as the propriety of using a plating method.
SOLUTION: In this electric connection inspection device having a plural contact terminals and for contacting electrically with an inspection object to input and output signals, a coating layer having 3 μ or more of thickness and having a Young's modulus higher than that of a wiring base material layer is provided on a surface of the wiring base material layer positioned in a tip part of the contact terminal.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种电气连接检查装置，其具有耐久性优良的微细结构，而在产品功能限制的观点上，伴随着电气特性的适应性，例如电阻和诸如内应力的物理性质，以及诸如使用电镀方法的适当性的制造中的限制。解决方案：在这种具有多个接触端子并用于与检查对象电接触以输入和输出信号的电气连接检查装置中，具有3μ或更大厚度并且具有比布线基材高的杨氏模量的涂层层设置在位于接触端子的前端部的布线基材层的表面上。

5. 发明专利

JP2002071719A PROBE CARD AND PRODUCTION METHOD THEREOF 失效
公开(公告)号：JP2002071719A
公开(公告)日：2002-03-12
申请号：JP2000266294
申请日：2000-09-01
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： HIRANO TAKAYUKI , GOTO YASUSHI , YONEDA YASUSHI , KATSUMI KUNIO
IPC分类号： G01R31/26 , G01R1/073 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a probe card which enables measuring of electric performance of a semiconductor device having a number of electrodes arranged at a higher density by a fast signal and is made highly practicable with a sufficient stroke and a scrubbing function, and a production method thereof which enables production of the probe card with a higher machining accuracy without reguiring a microscopic assemling work. SOLUTION: The probe card is constituted of a base material 1, a wiring part 2 and an extended wiring part 3. The wiring part 2 is formed in a shape of a cantilever beam. The wiring part 2 is provided with a fixing part 11 for fixing it on a substrate 6, an intermediate part 10a erected from the fixing part 11, a protruded support 10 for supporting a probe 9 following the intermediate part 10a and the probe 9 which is brought into contact with an electrode of a semiconductor device to be measured, thereby allowing the probe 9 to have a sufficient stroke and a scrubbing mechanism.

6. 发明专利

JP2001281297A IC SOCKET 失效
公开(公告)号：JP2001281297A
公开(公告)日：2001-10-10
申请号：JP2000093232
申请日：2000-03-30
申请人： GENESIS TECHNOLOGY KK
发明人： FUKUDA MASATO , FUJII MASAMI
IPC分类号： G01R31/26 , G01R1/073 , H01R13/26 , H01R33/76
摘要： PROBLEM TO BE SOLVED: To provide an IC socket which can sufficiently prevent the occurrence of imperfect contact over a long period without providing the project which is provided on the contacting surface of the contact section of the conventional IC socket having the contact section, with which the lead section of an IC is brought into contact, for preventing the imperfect contact by forming an oxidized film on the surface of the lead section or for adhering deposits to the surface of the lead section. SOLUTION: This IC socket has a groove section 62 which is formed on the contact surface 61 of the contact section 5 with the lead section 6 so that the edge sections 621 of the groove section 62 may be rubbed against the lead section 5 when the contact section 6 is pressurized and the lead section 5 slides on the contact surface 61.

7. 发明专利

JP2000183123A METHOD AND DEVICE FOR EVALUATING IRON CONCENTRATION OF SILICON SEMICONDUCTOR 失效
公开(公告)号：JP2000183123A
公开(公告)日：2000-06-30
申请号：JP16393499
申请日：1999-06-10
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： TAKAMATSU HIROYUKI , KUSUMI YUKIHIRO , SUMINOE SHINGO , IBA KUNIO , OSHIMA FUTOSHI , HASHIZUME HIDEHISA
IPC分类号： G01N21/63 , G01N21/00 , G01N22/00 , G01N27/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and device for evaluating an iron concentration of a silicon semiconductor wherein the ion concentration in a semiconductor sample is easily measured at high precision, while preventing introduction of additional contamination into the semiconductor sample. SOLUTION: When a P-type silicon semiconductor sample contaminated with iron is continuously irradiated with light, Fe-B in the sample is gradually dissociated. When an evaluation value DFe=(1/τ1)-(1/τ2) is determined from the recombination life time τ1 of the Fe-B before dissociation and the recombination life time (saturation value) τ2 after dissociation, the DFe is correlated with iron concentration. With a relationship between the evaluation value DFe and iron concentration determined as a calibration curve in advance, the recombination life time τ1 of Fe-B before dissociation under optical irradiation and the combination life time (saturation value) τ2 after dissociation are measured, which are collated to the calibration curve for evaluating the iron concentration.

8. 发明专利

JP2002318247A CONNECTION DEVICE 失效
公开(公告)号：JP2002318247A
公开(公告)日：2002-10-31
申请号：JP2001123452
申请日：2001-04-20
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： HIRANO TAKAYUKI , IWAMURA EIJI , GOTO YASUSHI , YONEDA YASUSHI
IPC分类号： G01R31/26 , G01R1/073 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a connection device reducing the abrasion of a contact terminal even if an object to be inspected comes into contact with the contact terminal, capable of reducing the adhesion of an electrode metal to be inspected to the contact terminal to the utmost, low in electric resistance and capable of obtaining stable output. SOLUTION: In the connection device having a plurality of the contact terminals and electrically connected to the object to be inspected by the contact terminals to input and output a signal, at least the surface of each of the contact terminals in the vicinity of the leading end thereof is coated with a carbon film containing a metal element having properties forming a carbide.

9. 发明专利

JP2000091393A SEMICONDUCTOR EVALUATION EQUIPMENT 失效
公开(公告)号：JP2000091393A
公开(公告)日：2000-03-31
申请号：JP25873198
申请日：1998-09-11
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： TAKAMATSU HIROYUKI , ICHIMURA MASAYA
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure with reliability the bulk life time which can be obtained under sufficiently suppressed state of surface recombination. SOLUTION: Transparent electrodes 5 are disposed above and below a semiconductor sample W. DC power supplies 7 are connected between these transparent electrodes 5 and the sample W. The polarity and the magnitude of the voltage to be applied to the sample W can be changed by controlling with the means of a computer 8. Since the polarity and the magnitude of the application voltage being successively changed, the life time is measured by the photoconductive attenuation method to obtain the application voltage-life time relationship, it may be stated that as the life time increases, surface recombination is suppressed. Therefore, maximum value for the life time in the relationship is the internal life time of the sample. There is a specified relationship between the energy band state of the surface and the polarity of the voltage for approaching the accumulation state or the inversion state from the energy band state of the surface, and the surface energy band state of the sample can be evaluated from the specified relationship.

10. 发明专利

JPH11281337A Defect inspecting apparatus 审中-公开
标题翻译：缺陷检查装置
公开(公告)号：JPH11281337A
公开(公告)日：1999-10-15
申请号：JP26252098
申请日：1998-09-17
申请人： Genesis Technology Kk , Kobe Steel Ltd , ジェネシス・テクノロジー株式会社 , 株式会社神戸製鋼所
发明人： YOSHIDA NAOYUKI , TAKAMATSU HIROYUKI , SUMINOE SHINGO , KATSUMI HIDEO , MORIMOTO TSUTOMU , IMANISHI AKIFUMI , HASHIZUME HIDEHISA , YAMAMOTO YUJI
IPC分类号： H01L21/66 , G01B11/30 , G01N21/88 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To enable high speed inspection of a plurality of members under test at once for defects such as cracks and breaks of the edges of the members by rotating the members at the same time and radiating an inspecting light on their edges in bloc.
SOLUTION: A plurality of disc-like members 1 under test such as semiconductor wafers are supported coaxially by a support shaft 2, it is rotated by rotating means 3 such as a motor, an inspection light radiating means 5 radiates an inspection light 4 on the edge 1a of the member 1, a scattering light detecting means 7 detects a scattered light 6 at the irradiated edge 1a, a defect inspecting means 8 inspect the defects of the edge 1a of the member 1 under test, based on the irradiating position of the inspecting light 4 and intensity of the scattered light 6. This method enables quick defect inspection of the cracks, breaks, etc., of the edge 1a of the member 1 under test and avoidance of the yield reduction due to the defects of the edges 1a.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：通过同时旋转构件，能够同时对多个待测试的构件进行高速检查，以检测构件边缘的裂纹和断裂等缺陷，并在其边缘放射检查光。解决方案：多个受半导体晶片测试的盘状元件1由支撑轴2同轴地支撑，它通过诸如电动机的旋转装置3旋转，检查光辐射装置5将检查光4照射在在散射光检测装置7中，散射光检测装置7检测在照射边缘1a处的散射光6，缺陷检查装置8基于被检测部件1的照射位置检查被检测部件1的边缘1a的缺陷，检查光4和散射光的强度6.该方法能够快速地对被检测部件1的边缘1a的裂纹，断裂等进行缺陷检查，并避免由于边缘1a的缺陷导致的屈服降低。

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