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1. 发明专利

JP2005252078A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005252078A
公开(公告)日：2005-09-15
申请号：JP2004062323
申请日：2004-03-05
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： NOMA TAKASHI , SEKI YOSHINORI , WAKUI MOTOAKI
IPC分类号： H01L21/301 , G01R31/26 , H01L21/56 , H01L21/78 , H01L23/31 , H01L23/485 , H01L23/544
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To improve cutting accuracy in a cutting process for manufacturing a semiconductor device pasted to a support. SOLUTION: The semiconductor device manufacturing method comprises a step of cutting a semiconductor wafer 10 pasted to a glass substrate 14 by moving a blade along a dicing region 60. A pair of mutually opposed alignment marks 51a, 51b are formed on both sides of the dicing region 60 on the wafer 10. For aligning a rotary blade position with the center of the dicing region 60, i.e., a center line 61 in the cutting process, a recognition camera detects positions of the alignment marks 51a, 51b, the center line 61 is obtained based on the detection result, and the cutting is made by aligning the position of the rotary blade on the center line 61. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高用于制造粘贴到支撑体的半导体器件的切割工艺中的切割精度。解决方案：半导体器件制造方法包括通过沿切割区域60移动刀片来切割粘贴到玻璃基板14上的半导体晶片10的步骤。在两侧形成一对相对的对准标记51a，51b 在切割过程中，为了将旋转刀片位置与切割区域60的中心对准，即中心线61，识别照相机检测对准标记51a，51b的位置，基于检测结果获得中心线61，并且通过使旋转刀片在中心线61上的位置对齐来进行切割。（C）2005年，JPO和NCIPI

2. 发明专利

JP2005072554A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005072554A
公开(公告)日：2005-03-17
申请号：JP2004022989
申请日：2004-01-30
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： NOMA TAKASHI , SUZUKI AKIRA , KITAGAWA KATSUHIKO , SEKI YOSHINORI , TAKAO YUKIHIRO , YAMAGUCHI KEIICHI , WAKUI MOTOAKI , OTSUKA HISAO , IIDA MASANORI
IPC分类号： H01L23/12 , H01L21/301 , H01L23/31 , H01L23/485
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device formed in a package and its manufacturing method by which a yield and reliability is enhanced. SOLUTION: In a semiconductor substrate 302, a window 303 to expose a first wiring 301 is formed only in a region where the first wiring 301 exists, by which an area where the semiconductor substrate 302 bonds with a glass substrate not illustrated through an insulation film and a resin is increased to prevent cracks and peeling. After the window 303 is formed, a slit is formed along a dicing line, and then the slit is covered with a protection film, after which the semiconductor device is diced into individual semiconductor chips for separation. Thus, the occurrence of peeling at a cross section and an edge of the separated semiconductor chips caused by contact of a blade is suppressed to the utmost. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成在封装中的半导体器件及其制造方法，其产率和可靠性得到提高。解决方案：在半导体衬底302中，仅在第一布线301存在的区域中形成露出第一布线301的窗口303，半导体衬底302与未图示的玻璃衬底接合的区域增加绝缘膜和树脂以防止裂纹和剥离。在形成窗口303之后，沿着切割线形成狭缝，然后用保护膜覆盖狭缝，然后将半导体器件切割成单独的半导体芯片以进行分离。因此，最大限度地抑制了由叶片的接触引起的分离的半导体芯片的截面和边缘的剥离现象。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004327748A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2004327748A
公开(公告)日：2004-11-18
申请号：JP2003120835
申请日：2003-04-25
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： NOMA TAKASHI , SEKI YOSHINORI , KUHARA KOICHI , SHINOKI HIROYUKI , TAKAKURA KOICHI , WAKUI MOTOAKI , OCHIAI AKIRA
IPC分类号： H01L23/12
摘要： PROBLEM TO BE SOLVED: To make satisfactory the electric connectivity between a conductive terminal for external connection and the wiring of a semiconductor device for improving the reliability in a BGA (ball grid array) type semiconductor device.
SOLUTION: First wiring 6 is formed on the surface of a semiconductor chip 12. A first glass substrate 10 is bonded to the surface of a semiconductor chip 12, on which the first wiring 6 is formed. A second glass substrate 16 is bonded to the rear surface of the semiconductor chip 12. Second wiring 18 is formed, which extends from the side of the first wiring 6 to the second glass substrate 16 and has a slit 20a. Then, a protective film 22 is formed so that the second wiring 18 is covered. The protective film 22 is brought into contact with the first glass substrate 10 via the slit 20a.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了使外部连接用导电端子与半导体装置的布线之间的电连接性良好，以提高BGA（球栅阵列）型半导体装置的可靠性。解决方案：第一布线6形成在半导体芯片12的表面上。第一玻璃基板10接合到形成有第一布线6的半导体芯片12的表面上。第二玻璃基板16接合到半导体芯片12的后表面。形成从第一布线6侧向第二玻璃基板16延伸并具有狭缝20a的第二布线18。然后，形成保护膜22，使第二布线18被覆盖。保护膜22经由狭缝20a与第一玻璃基板10接触。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2009100005A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009100005A
公开(公告)日：2009-05-07
申请号：JP2009008441
申请日：2009-01-19
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： NOMA TAKASHI , SUZUKI AKIRA , KITAGAWA KATSUHIKO , SEKI YOSHINORI , TAKAO YUKIHIRO , YAMAGUCHI KEIICHI , WAKUI MOTOAKI , OTSUKA HISAO , IIDA MASANORI
IPC分类号： H01L23/12
CPC分类号： H01L2224/13
摘要： PROBLEM TO BE SOLVED: To solve the problems relating to a yield and reliability caused by the cracks of a glass substrate or the like due to the exposure of the entire cutting area during dicing, in a method of manufacturing a semiconductor device, which has a process of bonding the glass substrate on the first surface of a semiconductor substrate, and etching the semiconductor substrate from the second surface of the semiconductor substrate. SOLUTION: In the method of manufacturing the semiconductor device, as shown in Fig. 12, in a semiconductor substrate 302, a window 303 which can expose first wiring 301 and the cutting area 304 during dicing is formed only in a region where the first wiring 301 is present. This increases a region where the semiconductor substrate 302 and the glass substrate not shown are bonded through an insulating film or resin, and prevents the occurrence of the cracks or peeling. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了解决由于在切割期间整个切割区域的暴露而导致的玻璃基板等的裂纹引起的产量和可靠性的问题，在半导体器件的制造方法中，其具有将玻璃衬底接合在半导体衬底的第一表面上，并从半导体衬底的第二表面蚀刻半导体衬底的工艺。解决方案：在制造半导体器件的方法中，如图1所示。如图12所示，在半导体基板302中，仅在存在第一布线301的区域中形成在切割期间能够露出第一布线301和切割区域304的窗口303。这增加了半导体衬底302和未示出的玻璃衬底通过绝缘膜或树脂接合的区域，并且防止了裂纹或剥离的发生。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2010199625A Semiconductor device, and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010199625A
公开(公告)日：2010-09-09
申请号：JP2010127140
申请日：2010-06-02
申请人： Kanto Sanyo Semiconductors Co Ltd , Sanyo Electric Co Ltd , 三洋電機株式会社 , 関東三洋セミコンダクターズ株式会社
发明人： NOMA TAKASHI , SEKI YOSHINORI , WAKUI MOTOAKI
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To improve cutting accuracy in a cutting process for manufacturing a semiconductor device in which a support is pasted to the surface of a wafer.
SOLUTION: A method of manufacturing a semiconductor device includes a step of cutting a semiconductor wafer 10 to which a glass substrate 14 is pasted, by moving a blade along a dicing region 60. The method includes a step in which a pair of alignment marks 51a, 51b opposed to each other are formed on both sides of the dicing region 60 on the wafer 10, in aligning a rotary blade position with the center of the dicing region 60, i.e., a center line 61 in the cutting process, a recognition camera detects positions of the alignment marks 51a, 51b, the center line 61 is obtained based on the detection result, the rotary blade position is aligned on the center line 61 and a cutting groove is formed which reaches a thickness direction-halfway point of the support along the center line from the reverse surface of the semiconductor wafer without coming in contact with an end of a pad exposed within a window.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高用于制造将支撑体粘贴到晶片表面的半导体器件的切割工艺中的切割精度。解决方案：制造半导体器件的方法包括通过沿着切割区域60移动刀片来切割被粘贴玻璃基板14的半导体晶片10的步骤。该方法包括以下步骤：将一对在切割区域60的切割过程中的切线区域60的两侧上形成有对准的对准标记51a，51b，将切割区域60的中心与旋转刀片位置对准，即中心线61，识别照相机检测对准标记51a，51b的位置，基于检测结果获得中心线61，旋转刀片位置在中心线61上排列，并且形成到达厚度方向中点的切割槽的支撑沿着中心线从半导体晶片的反面而不与在窗内暴露的焊盘的端部接触。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2005101411A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005101411A
公开(公告)日：2005-04-14
申请号：JP2003334922
申请日：2003-09-26
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： AKAISHI YOSHIO , SEKI YOSHINORI
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/12
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To suppress the occurrence of a problem involving a BGA type semiconductor device that an yield rate or reliability is lowered due to the thinning of a protective film covering the edge of its semiconductor chip. SOLUTION: A dummy pattern 7b is formed at the edge of the rear surface of a semiconductor chip 1 of the semiconductor device which comprises a glass substrate 4 bonded with resin 5 to the surface of the semiconductor chip 1 with a first wire 3 formed thereon, a second wire 8 connected to the first wire 3 and extending through a second insulating film 6 to the rear surface of the semiconductor chip 1, and a conductive terminal 11 connected to the second wire 8 through an opening formed at a protective film 10 formed on the second wire 8. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了抑制由于覆盖其半导体芯片的边缘的保护膜变薄而导致产率或可靠性降低的BGA型半导体器件的问题的发生。解决方案：在半导体器件的半导体芯片1的后表面的边缘处形成虚设图案7b，其包括用树脂5与半导体芯片1的表面接合的玻璃基板4，其具有第一布线3 形成在其上的第二线8，连接到第一线3并且延伸穿过第二绝缘膜6到半导体芯片1的后表面;以及导电端子11，其通过形成在保护膜上的开口连接到第二线8 10形成在第二线8上。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2009267152A Semiconductor device, and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009267152A
公开(公告)日：2009-11-12
申请号：JP2008116037
申请日：2008-04-25
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： OKADA KAZUHISA , SEKI YOSHINORI , SHINOKI HIROYUKI
IPC分类号： H01L31/02
摘要： PROBLEM TO BE SOLVED: To achieve a high-performance semiconductor device capable of reducing noise of a light-receiving element due to a so-called stray light by reducing a reflected light of light incident into the side surface of a through-hole formed on a support on a light-receiving element forming region.
SOLUTION: In order to reduce a reflected light reaching a forming region of a light-receiving element 1 from a through-hole side wall 13 of the support 5, the through-hole side wall 13 is formed to have an inclination of overhang shape or reverse tapered shape, or an gradual inclination angle. Alternatively, the upper surface of the through-hole 20 provided on the support 5 is covered with a barrier layer 7 serving as an opening 40 of a diameter smaller than the diameter of the through-hole 20, thereby eliminating or reducing the reflected light reaching the forming region of the light-receiving element 1 from the through-hole side wall 13.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了实现能够通过减少入射到贯通孔的侧表面的光的反射光而由于所谓的杂散光而降低光接收元件的噪声的高性能半导体器件，孔形成在光接收元件形成区域上的支撑件上。解决方案：为了从支撑件5的通孔侧壁13减少到达光接收元件1的形成区域的反射光，通孔侧壁13形成为具有悬垂形状或倒锥形，或逐渐倾斜的角度。或者，设置在支撑体5上的通孔20的上表面被作为直径小于通孔20的直径的开口40的阻挡层7覆盖，从而消除或减少到达的反射光来自通孔侧壁13的光接收元件1的形成区域。（C）2010，JPO＆INPIT

8. 发明专利

JP2008294405A Semiconductor device, and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008294405A
公开(公告)日：2008-12-04
申请号：JP2008066297
申请日：2008-03-14
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： OKADA KAZUHISA , SHINOKI HIROYUKI , SEKI YOSHINORI , YAMADA KOJI
IPC分类号： H01L21/3205 , H01L23/12 , H01L23/52
CPC分类号： H01L24/97 , H01L24/05 , H01L24/13 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L29/0657 , H01L2224/0401 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12043 , H01L2924/15311 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To enhance moisture resistance between a supporting body and an adhesive layer, and to enhance the reliability of a semiconductor device. SOLUTION: A semiconductor device of the invention has a first insulation film 2 formed on a semiconductor element, a first wiring 3 formed on the first insulation film 2, a supporting body 8 formed on the semiconductor element with an adhesive layer 7 being interposed therebetween, a third insulation film 11 covering the back surface of the semiconductor element onto the side surface thereof and the side surface of the adhesive layer 7, a second wiring 12 connected to the first wiring 3 and extending onto the back surface of the semiconductor element with the third insulation film 11 being interposed therebetween, and a protection film 13 formed on the second wiring 12. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提高支撑体和粘合剂层之间的耐湿性，并且提高半导体器件的可靠性。解决方案：本发明的半导体器件具有形成在半导体元件上的第一绝缘膜2，形成在第一绝缘膜2上的第一布线3，形成在半导体元件上的具有粘合层7的支撑体8 插入其间的第三绝缘膜11覆盖半导体元件的侧表面和粘合剂层7的侧表面;第二布线12，连接到第一布线3并延伸到半导体的背面元件，其间夹有第三绝缘膜11，以及形成在第二布线12上的保护膜13.版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008270573A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008270573A
公开(公告)日：2008-11-06
申请号：JP2007112336
申请日：2007-04-20
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： HORIKOSHI MASARU , UCHIYAMA HISAYOSHI , NOMA TAKASHI , SEKI YOSHINORI , YAMADA KOJI , ISHIBE SHINZO , SHINOKI HIROYUKI
IPC分类号： H01L21/822 , H01L23/12 , H01L27/04
CPC分类号： H01L23/642 , H01L23/3114 , H01L23/481 , H01L23/5223 , H01L24/11 , H01L24/12 , H01L24/25 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/1132 , H01L2224/131 , H01L2224/18 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/3512 , H01L2224/13099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a capacitance element in the same semiconductor device to make the overall device compact, the capacitance element having larger electrostatic capacity than conventionally.
SOLUTION: A semiconductor integrated circuit 1 and a pad electrode 4 are formed on the top surface of a semiconductor substrate 2. A second insulating film 10 is formed on a flank and a reverse surface of the semiconductor substrate 2, and a capacity electrode 9, which is in contact with the reverse surface of the semiconductor substrate 2, is formed between the reverse surface of the semiconductor substrate 2 and the second insulating film 10. The second insulating film 10 is covered with a wiring layer 11 electrically connected to the pad electrode 4, and the wiring layer 11 and capacity electrode 9 overlap each other, via the second insulating film 10 interposed. Accordingly, a capacitor 16 is formed of the capacity electrode 9, the second insulating film 10 and the wiring layer 11.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在相同的半导体器件中配备有电容元件以使整个器件紧凑的半导体器件，电容元件具有比常规更大的静电电容。解决方案：在半导体衬底2的顶表面上形成半导体集成电路1和焊盘电极4.第二绝缘膜10形成在半导体衬底2的侧面和反面上，与半导体基板2的背面接触的电极9形成在半导体基板2的背面和第二绝缘膜10之间。第二绝缘膜10被布线层11覆盖，该布线层11电连接到焊盘电极4以及布线层11和电容电极9经由第二绝缘膜10彼此重叠。因此，电容器16由电容电极9，第二绝缘膜10和布线层11形成。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009267151A Semiconductor device, and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009267151A
公开(公告)日：2009-11-12
申请号：JP2008116036
申请日：2008-04-25
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： OKADA KAZUHISA , SEKI YOSHINORI , SHINOKI HIROYUKI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device capable of reducing noise of a light-receiving element due to a so-called stray light by reducing a reflected light of light incident onto the side surface of a through-hole formed on a support on a light-receiving element forming region.
SOLUTION: An irregular reflection surface 7 having an unevenness for irregularly reflecting incident light is formed on a through-hole side wall 13 formed on the through-hole 20 of the support 5, alternatively, a light absorbing film 8 for absorbing the incident light is formed on the through-hole side wall 13. Thus, the reflected light which is received by the light-emitting element from the through-hole side wall 13 is reduced.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过减少入射到贯通孔的侧面的光的反射光而由于所谓的杂散光而降低光接收元件的噪声的高性能半导体器件，孔形成在光接收元件形成区域上的支撑件上。解决方案：在形成在支撑件5的通孔20上的通孔侧壁13上形成具有用于不规则地反射入射光的凹凸的不规则反射表面7，或者，用于吸收入射光形成在通孔侧壁13上。因此，从通孔侧壁13被发光元件接收的反射光减少。版权所有（C）2010，JPO＆INPIT

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