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    • 3. 发明专利
    • Optical connector plug
    • 光连接器插头
    • JP2009015236A
    • 2009-01-22
    • JP2007179779
    • 2007-07-09
    • Mitsubishi Cable Ind Ltd三菱電線工業株式会社
    • WATABE MICHIYASUURAMATSU TOMOSHIANPO TSUGIOFUJITA MORIYUKIMIYAKE KAZUYUKINASU SHOJI
    • G02B6/38
    • PROBLEM TO BE SOLVED: To provide an optical connector plug with a new structure.
      SOLUTION: The optical connector plug 100 includes: a plug body 10 having a ferrule provided with an optical fiber F; an inside member 20 provided at the plug body 10 so as to cover the outside thereof and to be movable between a tip side position storing the ferrule and a terminal side position projecting the ferrule to the plug body 10; and an outside member 30 provided at the outside of the inside member so as to be movable between the front side position and the post side position thereof to the inside member 20. The external member 30 is provided with a blocking piece 35.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供具有新结构的光连接器插头。 解决方案:光连接器插头100包括:具有设置有光纤F的套圈的插头主体10; 内部构件20设置在插头主体10上,以便覆盖其外部,并且能够在存储套圈的前端侧位置和将套圈突出到端子侧位置之间移动到插头主体10; 以及外部构件30,其设置在内侧构件的外侧,以能够在内侧构件20的前侧位置和后侧位置之间移动。外部构件30设置有阻挡件35。 版权所有(C)2009,JPO&INPIT
    • 4. 发明专利
    • LASER
    • JPH11346019A
    • 1999-12-14
    • JP15258198
    • 1998-06-02
    • MITSUBISHI CABLE IND LTD
    • MIYAKE KAZUYUKITANIGUCHI KOICHI
    • H01S3/08
    • PROBLEM TO BE SOLVED: To conduct a miniaturization of the whole laser even while light, which should not be made to output outside of the optical resonator of the laser, is effectively removed in the case where there is such the light in the interior of the resonator. SOLUTION: A laser is a solid laser of a structure, wherein a laser, particularly a semiconductor laser element is used as an excitation light source 1 and the laser has a laser crystal 2. At least the output side mirror 4 out of one pair of mirrors 3 and 4 of an optical resonator is formed as an independent mirror component. The mirror 4 is formed using a transparent member as its parent body 4b. A dielectric multilayer film 4a, which constitutes the resonator and reflects a laser oscillation beam, is provided on the surface, which is used as the inside of the resonator, of said parent body. Moreover, a dielectric multilayer film 4c, which transmits wavelength light Lx, which should be made to output from said optical resonator, and reflects wavelength light Ly, which should not be made to output from the resonator, is provided on the surface, which is used as the outside of the resonator, of the parent body 4b.
    • 5. 发明专利
    • LIGHT INTENSITY MODULATED LASER DEVICE
    • JPH11330601A
    • 1999-11-30
    • JP13943998
    • 1998-05-21
    • MITSUBISHI CABLE IND LTD
    • MIYAKE KAZUYUKIKOTO MASAHIROTANIGUCHI KOICHI
    • H01S3/136
    • PROBLEM TO BE SOLVED: To provide a light intensity modulated laser device which is stabilized in output power and output position at the same time and restrained from becoming large in size as a whole, even if it is composed of a solid-state laser device and a modulation device. SOLUTION: A light intensity modulated laser device has a structure where a laser beam L2 is projected from a solid-state laser device 2 using an exciting light L2 outputted from an exciting light source 1, the laser beam L2 is made to penetrate through a light intensity modulation device 3 so as to be intensity- modulated into an intensity-modulated laser beam L3, and the laser beam L3 is outputted from the light intensity modulated device 3. A photodetector 4 measures the average intensity of the laser beam L3, receiving a part of the laser beam L3, and the exciting light source 1 is controlled in output by a control 5 on the basis of the measurement result so as to lessen a variation in the output of the solid-state laser device 2. Furthermore, at least a resonator of the solid-state laser device 2 is provided onto an invar material base plate B1, and the resonator is kept at a constant temperature by a temperature controlling means 6.
    • 6. 发明专利
    • SECOND HARMONIC GENERATING DEVICE AND METHOD
    • JPH1140876A
    • 1999-02-12
    • JP19380897
    • 1997-07-18
    • MITSUBISHI CABLE IND LTD
    • MIYAKE KAZUYUKIKOTOU MASAHIROTANIGUCHI KOICHI
    • G02F1/37H01S3/109
    • PROBLEM TO BE SOLVED: To obtain a strongly modulated second harmonic by a method, wherein the second harmonic is generated only when the laser ray wavelength of an LD is in the phase-matching allowable wavelength range of a wavelength conversion means, and the second harmonic is reduced to almost zero in output, when the laser ray wavelength of an LD is out of the phase-matching allowable wavelength range. SOLUTION: A domain inversion element has a phase-matching allowable wavelength width to phase-match only with the laser rays of certain wavelengths out of laser rays of variable wavelength range emitted from an LD. The domain inversion element having a phase-matching allowable wavelength width of λn to λ1 is used. In this case, only the laser rays of wavelengths λn to λ1 out of laser rays of variable wavelength range λ2 to λ1 and in a phase-matching allowable wavelength width are wavelength- converted to a second harmonic and outputted. On the other hand, laser rays of wavelengths less than λ2 to λ1 are not converted into wavelength, and a second harmonic intensity-modulated with the same frequency with laser rays emitted form the LD is generated. Through this setup, a second harmonic generating device which is very small in size, simple in structure, easily operated, and high in performance is capable of generating an intensity-modulated second harmonic.
    • 7. 发明专利
    • PRODUCTION OF THIN OXIDE SUPERCONDUCTING FILM
    • JPH05213692A
    • 1993-08-24
    • JP8780091
    • 1991-03-26
    • MITSUBISHI CABLE IND LTD
    • MIYAKE KAZUYUKI
    • C01G1/00C01G3/00C30B23/08C30B29/22H01B12/06H01B13/00H01L39/24
    • PURPOSE:To prevent the cracking and incomplete phase transition of a thin film at the time of introducing oxygen by preheating this oxygen when the temp. of a substrate after film formation is reduced and oxygen is absorbed in the formed film in the case where a thin oxide superconducting film is directly formed on the substrate at a high temp. by a vapor growth method. CONSTITUTION:A crystalline film is formed on a substrate heated to 600-800 deg.C by sputtering in a film formation chamber and the formed film is cooled while slowly reducing the temp. of the substrate and holding the substrate at 400-600 deg.C if necessary. Oxygen is absorbed in the formed film by carrying out the cooling in oxygen and a thin oxide superconducting film as an end product is obtd. In this case, oxygen preheated to a prescribed temp. is introduced into the chamber and then cooled to room temp. after the lapse of a certain time. The temp. difference between the substrate and oxygen is reduced to prevent the instantaneous cooling of the formed film, the cracking and incomplete phase transition of the film due to rapid cooling can be prevented and a thin oxide superconducting film having satisfactory characteristics is obtd.