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1. 发明专利

JPH0617248A SPUTTERING DEVICE 失效
公开(公告)号：JPH0617248A
公开(公告)日：1994-01-25
申请号：JP15240892
申请日：1992-06-11
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , NIPPON STEEL CORP
发明人： ITO WATARU , MORISHITA TADATAKA
IPC分类号： C23C14/35 , H01F41/18 , H01F41/30
摘要： PURPOSE:To provide the off-axis type sputtering device which forms functional multilayered films and improves film forming efficiency by selecting the film forming conditions of the sputtering device in accordance with target compsns., substrate compsns. and film forming purposes and expanding the stability and range of film formation. CONSTITUTION:The off-axis type sputtering device disposed with substrates 20 and targets T at nearly 90 deg. is disposed with plural cathodes, on which backing plates 11, water cooling mechanisms 17 and magnets 31 are disposed on the rear surface of the target in such a manner that the target surfaces face each other in a polygonal shape. A substrate holder 21 holding the substrates 20 is disposed near the center of the polygonal shape constituted by the targets T.

2. 发明专利

JPH0715051A MANUFACTURE OF YBCO SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH0715051A
公开(公告)日：1995-01-17
申请号：JP15382493
申请日：1993-06-24
申请人： MITSUBISHI ELECTRIC CORP , NIPPON STEEL CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： YOSHIDA YUKIHISA , ITO WATARU , MORISHITA TADATAKA
IPC分类号： C23C14/34 , C23C14/08 , C23C14/35 , C23C14/44 , C30B23/08 , H01L39/24
摘要： PURPOSE:To obtain a manufacturing method of a YBCO superconducting thin film which can provide a superconducting thin film excellent in crystallinity at a high yield, by introducing a new film formation parameter, in a hybrid plasma sputtering method. CONSTITUTION:When a Y-Ba-Cu-O based superconducting thin film is formed on a substrate 6 by using parallel plate type sputtering method, a high-frequency voltage from a high-frequency power supply 10 and a DC voltage from a DC power supply 13 are superposed and simultaneously applied to a cathode 4, a YBCO target 5 having conductivity is arranged on the cathode 4, and a DC voltage is applied to a substrate holder 7 from a DC power supply 8. Film formation condition is controlled by using the difference of voltage drop in each ion sheath formed just above the substrate 6 and a target 5.

3. 发明专利

JPH0688207A PRODUCTION OF YBA2CU3OX SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH0688207A
公开(公告)日：1994-03-29
申请号：JP23870892
申请日：1992-09-07
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , NIPPON STEEL CORP , HOKKAIDO ELECTRIC POWER , MITSUBISHI ELECTRIC CORP
发明人： ITO WATARU , MORISHITA TADATAKA , HONMA KOUJI , YOSHIDA YUKIHISA
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , C23C14/46 , C30B29/22 , H01L39/24
摘要： PURPOSE:To form the YBaCu2O3 superconducting film having excellent crystallinity by impressing a high-frequency voltage and a DC bias voltage to a cathode holding a target at the time of forming the superconducting film on a substrate by a sputtering method. CONSTITUTION:The target 5 made of a conductive YbaCu alloy contg. Y:Ba:Cu at 1:2:3 ratio is arranged on a cathode 4 having the magnets 2 and cooling paths 3. A film forming chamber 1 provided with a substrate 6 to be treated in the position opposite to the cathode is internally evacuated to a vacuum and a gaseous mixture composed of Ar and O2 is supplied under a prescribed pressure. The substrate 6 is heated to 600 to 900 deg.C by a heater 7. The high-frequency voltage is simultaneously impressed from a high-frequency power source 8 via a matching device 9 to the cathode 4 and the target 5 is driven by the Ar ions generated by a glow discharge when a negative bias voltage of 0 to 200V is impressed from a DC electrode 11 via a low-pass filter, by which the YBaCu2O superconducting film having the excellent crystallinity is formed on the surface of the substrate 6.

4. 发明专利

JP2010184844A Method of operating oxygen-producing plant 审中-公开
标题翻译：运行氧气生产厂的方法
公开(公告)号：JP2010184844A
公开(公告)日：2010-08-26
申请号：JP2009031264
申请日：2009-02-13
申请人： Nippon Chem Plant Consultant:Kk , Nippon Steel Corp , 新日本製鐵株式会社 , 株式会社日本ケミカル・プラント・コンサルタント
发明人： ITO WATARU , NAGAI TORU , MARUKO SABURO , ONODERA MASAHIRO
IPC分类号： C01B13/02 , B01D53/22
摘要： PROBLEM TO BE SOLVED: To reduce plant manufacturing and operation costs by avoiding the use of a dedicated apparatus as much as possible in the operation of an oxygen separation apparatus utilizing mixed conductive membranes.
SOLUTION: The method of operating an oxygen-producing plant which employs an oxygen separation apparatus utilizing mixed conductive membranes involves taking out a part of compressed air flowing in the combustor of a gas turbine, feeding it to the oxygen separation apparatus utilizing mixed conductive membranes via a heat exchanger to obtain oxygen, joining, via the heat exchanger, oxygen-poor gas with a lowered oxygen content from the exit of the oxygen separation apparatus with the rest of the compressed air a part of which has been taken out, and introducing the joined flow into the combustor of the gas turbine.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过在使用混合导电膜的氧分离装置的操作中尽可能避免使用专用装置来减少工厂制造和操作成本。解决方案：采用使用混合导电膜的氧分离装置的氧气生产设备的操作方法包括取出在燃气轮机的燃烧器中流动的一部分压缩空气，将其供给到使用混合的氧分离装置导电膜通过热交换器获得氧气，通过热交换器将来自氧气分离设备的出口的氧含量降低的贫氧气体与其中一部分已被取出的压缩空气接合，并将连接的流引入燃气轮机的燃烧器。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2005314142A Oxide-ion mixed conductor, composite structure, oxygen separator, and chemical reactor 有权
标题翻译：氧化物离子混合导体，复合结构，氧分离器和化学反应器
公开(公告)号：JP2005314142A
公开(公告)日：2005-11-10
申请号：JP2004131819
申请日：2004-04-27
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： NAGAI TORU , ITO WATARU , HIRANO KENJI
IPC分类号： B01D53/22 , B01D69/12 , B01D71/02 , C01G51/00
摘要： PROBLEM TO BE SOLVED: To provide an oxygen-ion mixed conductor or the like having a coefficient of thermal expansion highly compatible with metal members composed of stainless steel, a heat resistant alloy or the like and exhibiting sufficiently high oxygen permeability.
SOLUTION: The oxygen-ion mixed conductor having a perovskite type crystal structure has the composition represented by the general formula: [Ln
a Ba
b A
1-a-b ]BαO(
3- δ), and the porous body with a porosity of 10% or more formed from the conductor has a coefficient of thermal expansion in the atmosphere of less than 21 ppm/°C at a temperature from 100 to 850°C. In the general formula, Ln denotes one element or a combination of two or more elements selected from Y and lanthanoid elements; A denotes one element or a combination of two elements selected from Sr and Ca; B denotes a combination of two or more elements selected from Cu, Ni, Zn, Li, Mg, Co, Fe, Cr, Ga, Nb, Ta, Ti and Zr, wherein at least one of Fe and Co and at least one of Nb and Ta are always selected, and wherein 0≤a≤0.2, 0.2
摘要翻译：解决的问题：提供具有与由不锈钢，耐热合金等构成的金属构件高度相容的热膨胀系数并且具有足够高的透氧性的氧离子混合导体等。解决方案：具有钙钛矿型晶体结构的氧离子混合导体具有由以下通式表示的组成：[Ln a Ba -β-（B-3）），并且由导体形成的孔隙率为10％以上的多孔体的气氛中的热膨胀系数小于21 ppm /℃，温度为100〜850℃。在通式中，Ln表示选自Y和镧系元素中的两种或多种元素的一种元素或组合; A表示选自Sr和Ca中的一种元素或两种元素的组合; B表示选自Cu，Ni，Zn，Li，Mg，Co，Fe，Cr，Ga，Nb，Ta，Ti和Zr中的两种或更多种元素的组合，其中Fe和Co中的至少一种和总是选择Nb和Ta，其中0≤a≤0.2,0.2

6. 发明专利

JP2001097789A CERAMIC COMPOSITE MATERIAL 失效
公开(公告)号：JP2001097789A
公开(公告)日：2001-04-10
申请号：JP28154499
申请日：1999-10-01
申请人： NIPPON STEEL CORP
发明人： SAKON TADASHI , ITO WATARU , DONOMAE HITOSHI , NAGAI TORU , YAMADA NORIKO
IPC分类号： B01D53/22 , B01D71/02 , B01J23/42 , B01J23/46 , B01J23/78 , B01J23/89 , C01B13/02 , C01G51/00 , C04B41/50 , C04B41/85 , C04B41/87 , C04B41/89 , H01B1/08
摘要： PROBLEM TO BE SOLVED: To obtain a ceramic composite material having a capacity of selectively transporting oxygen in air or an oxygen-containing mixed gas. SOLUTION: This ceramic composite material is obtained by forming a covering layer and a sealed hole part consisting of a compact porous material mixed conductive oxide in which molar ratio of each of the component elements is expressed by the following formula and contains strontium, iron and cobalt as main components on one surface of an oxide porous material consisting mainly of magnesium, also forming a porous material surface layer containing magnesia and a catalyst, magnesia and a mixed conductive oxide, or magnesia, the mixed conductive oxide and the catalyst on the surface layer of the above oxide porous material, further forming the above covering layer and the sealed hole part on its surface, or further imparting a catalyst on the surface of the above covering layer and the sealed hole part or imparting and closely adhering the porous material surface layer or the porous material mixed conductive oxide imparted with the catalyst optionally. Sr:Fe:Co=4:x:y (where; 3.5

7. 发明专利

JPH09157841A SPUTTERING FILM FORMING DEVICE AND FORMATION OF FILM USING THE SAME 失效
公开(公告)号：JPH09157841A
公开(公告)日：1997-06-17
申请号：JP31455395
申请日：1995-12-01
申请人： NIPPON STEEL SEMICONDUCTOR CO , NIPPON STEEL CORP
发明人： ITO WATARU , SASAKI TSUTOMU , KAWASAKI KOICHI , AOKI KUNIO , TOGANO YOSHIAKI
IPC分类号： C23C14/00 , C23C14/34 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a sputtering device capable of reducing the number of particles adhered to a wafer and improving the yield by the prolongation of the time till the exchange of a shield member and the productivity. SOLUTION: In a sputtering device 12 provided with a shield member having an opening part through which sputtered grains are passed, as for the shield member 13, the opening part is provided on the center, and, moreover, it is set via the main body 14 of the shield member in which the inside face facing to the side of a target 1 is composed of a recessed curved one and a joining column 15, which has a covering 16 with an inside diameter small than that of the opening part in the main body 14 of the shield member.

8. 发明专利

JPH0645267A METHOD AND APPARATUS FOR MANUFACTURING SILICON OXIDE THIN FILM BY PLASMA CVD 失效
公开(公告)号：JPH0645267A
公开(公告)日：1994-02-18
申请号：JP7751993
申请日：1993-03-12
申请人： NIPPON STEEL CORP
发明人： MIYAMOTO YASUSHI , ITO WATARU , MIYAJIMA SHUNPEI , HASHIMOTO MISAO , ONO NAOTO , TAKAHASHI TSUNETOSHI
IPC分类号： C23C16/40 , C23C16/50 , C23C16/52 , H01L21/205
摘要： PURPOSE:To realize formation of a film at a high speed with high reproducibility while suppressing generation of powder as much as possible in vapor state by monitoring a vibration temperature of nitrogen molecules and controlling a vibration temperature range to a suitable range in a method for manufacturing a silicon oxide thin film by a plasma CVD. CONSTITUTION:The vibration temperature of nitrogen molecules in a formed film is monitored, and applied power is so controlled as to become a vibration temperature range of an optimal plasma state. A method for monitoring nitrogen molecule vibration temperature introduces the light emitted by the plasma from an inspection window 10 of a CVD continuous coating facility to a spectroscope 2 via an optical fiber 1. A photoelectric multiplier 3 for amplifying a spectral signal, a lock-in amplifier 4 and a computer for calculating are connected thereto. In order to calculate the vibration temperature at a high speed, a wavelength range to be measured is set to 385-400nm, and the temperature is calculated from three nitrogen molecule emission spectra of 389.46nm, 394.30nm and 399.84nm.

9. 发明专利

JPH0433864B2 失效
公开(公告)号：JPH0433864B2
公开(公告)日：1992-06-04
申请号：JP12604687
申请日：1987-05-25
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , ITO TOORU
IPC分类号： C01B31/04 , C01B31/06 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04

10. 发明专利

JPH0397865A CERAMIC COATING METAL PLATE 失效
公开(公告)号：JPH0397865A
公开(公告)日：1991-04-23
申请号：JP23176589
申请日：1989-09-08
申请人： NIPPON STEEL CORP
发明人： MIYAJIMA SHUNPEI , ITO WATARU , HASHIMOTO MISAO , ITO ISAO
IPC分类号： C23C14/06 , C23C14/08 , C23C14/34 , C23C16/30 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/40 , C23C28/04 , C23C30/00
摘要： PURPOSE:To manufacture a monochrome ceramic coating metal plate rich in color variety and excellent in ornamentality and weatherability by forming transparent ceramic layer specifying the thickness and refraction factor with physical deposition, etc., on a metal base plate. CONSTITUTION:The transparent ceramic layer having 0.05-5mu thickness and >=2.0 refraction factor in visible radiation range, is formed on the metal base plate with dry process of physical deposition, chemical deposition, etc. Then, as the metal base plate, stainless steel, titanium, copper, ordinary steel, aluminum, etc., is used and as the transparent ceramic layer, at least one kind selected from oxide, nitride, etc., of Ti, Zr, Hf, Tb, V, Nb, etc., is used. By this method, the coating metal increased in color variety by large change of color tone and having high weatherability and ornamental property is obtd.

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