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1. 发明专利

JPH0620156B2 失效
公开(公告)号：JPH0620156B2
公开(公告)日：1994-03-16
申请号：JP10082883
申请日：1983-06-08
申请人： KOGYO GIJUTSUIN
发明人： MURAMATSU SHINICHI , SHIMADA JUICHI , NAKAMURA NOBUO , MATSUBARA SUNAO , UTAKA MASATOSHI
IPC分类号： G05F1/67 , C23C16/50 , G05F1/56 , H01L21/205 , H01L31/04 , H01L31/20

2. 发明专利

JPH065774B2 失效
公开(公告)号：JPH065774B2
公开(公告)日：1994-01-19
申请号：JP17251185
申请日：1985-08-07
申请人： KOGYO GIJUTSUIN
发明人： ITO HARUO , SHIMADA JUICHI , MURAMATSU SHINICHI , MATSUBARA SUNAO , NAKAMURA NOBUO
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/06 , H01L31/075 , H01L31/076 , H01L31/077

3. 发明专利

JPH0514414B2 失效
公开(公告)号：JPH0514414B2
公开(公告)日：1993-02-25
申请号：JP21699282
申请日：1982-12-13
申请人： KOGYO GIJUTSUIN
发明人： ITO HARUO , SAITO TADASHI , UTAKA MASATOSHI , NAKAMURA NOBUO , KASHU NOBUYOSHI
IPC分类号： H01L31/04 , H01L21/20 , H01L21/205 , H01L21/265 , H01L31/20

4. 发明专利

JPS59227169A SOLAR BATTERY MANUFACTURING DEVICE 失效
公开(公告)号：JPS59227169A
公开(公告)日：1984-12-20
申请号：JP10082783
申请日：1983-06-08
申请人： KOGYO GIJUTSUIN
发明人： NAKAMURA NOBUO , SHIMADA JIYUICHI , MATSUBARA SUNAO , MURAMATSU SHINICHI , UTAKA MASATOSHI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/20
摘要： PURPOSE:To obtain the battery consisting of a homogeneous and superior quality amorphous Si film by a method wherein, when a solar battery is formed on the substrate placed in a reation tube by applying a voltage between plasma generating electrodes arranged in a reactive tube, said electrodes are composed of a plurality of rod type or linear electrodes. CONSTITUTION:A plurality of substrate holders 3 whereon a stainless steel substrate 4 to be used for solar battery is adhered are installed in upright position and housed in a reaction furnace 2, and linear electrodes 5 and 6 are arranged on the upper and lower parts of said substrate holders 3. The solar battery manufacturing device is constituted as above, and after the reaction furnace 2 has been evacuated to 1X10 Torr, SiH4 and B2H6/H2 are mixed at the prescribed ratio and filled in the reaction furnace 2, plasma is generated by applying a high frequency voltage on the electrodes 5 and 6, and a P type layer 7 is deposited on the substrate 4. Then, a non-doped layer 8 is grown on the layer 7 using SiH4 only, then an N type layer 9 is grown on the layer 8 using SiH4 and PH3/H2, and after a P-I-N structure has been obtained, a transparent conductive film 10 is covered on the surface. Through these procedures, the battery having excellent release voltage, short-circuit current and photoelectric conversion efficiency can be obtained.

5. 发明专利

JPS5534470A PRODUCTION FOR SOLAR BATTERY 失效
公开(公告)号：JPS5534470A
公开(公告)日：1980-03-11
申请号：JP10747078
申请日：1978-09-04
申请人： KOGYO GIJUTSUIN
发明人： KETSUSAKO MITSUNORI , NAKAMURA NOBUO
IPC分类号： H01L31/04 , H01L31/18
摘要： PURPOSE:To simplify the process for manufacturing solar batteries and form easily structure for junction and protection from contamination by shaping semiconductor film on a substrate, coating and heating silica film on its peripheral part and then forming a second conduction-type region. CONSTITUTION:An optical active layer 1 of p-type Si is formed on a polycrystalline metal Si substrate 2 (P ) by means of the epitaxial method. Then silica film is coated on the peripheral part only. The film is treated at 850 deg.C in the N2 which has passed through phosphoryl chloride and at the same time when the film is concentrated an n layer 4 is formed. The p-n junction terminates at the lower part of a SiO2 layer 3 made from a silica film and is prevented from the external contamination.

6. 发明专利

JPS5419690A ELECTRODE OF SEMICONDUCTOR DEVICES 失效
公开(公告)号：JPS5419690A
公开(公告)日：1979-02-14
申请号：JP8407877
申请日：1977-07-15
申请人： KOGYO GIJUTSUIN
发明人： SAITOU TADASHI , NAKAMURA NOBUO , CHIBA SACHIKO , ITOU HARUO , KETSUSAKO MITSUNORI , TOKUYAMA KON
IPC分类号： H01L31/04 , H01L21/28
摘要： PURPOSE:To obtain electrodes whose equivalent parallel resistances coresponde to that of single crystal and considerably reduce cost by forming the electrodes to be formed on a semiconductor substrate with the laminated metals of thin Ti and Ag layers deposited at a low temperature, thick Ni layer and Pb-Sn solder layer.

7. 发明专利

JPH0628253B2 失效
公开(公告)号：JPH0628253B2
公开(公告)日：1994-04-13
申请号：JP3293088
申请日：1988-02-17
申请人： KOGYO GIJUTSUIN
发明人： NAKAMURA NOBUO , NAKAGAWA KYOKAZU , KURE TOKUO
IPC分类号： H01L21/302 , H01L21/3065

8. 发明专利

JPH0515073B2 失效
公开(公告)号：JPH0515073B2
公开(公告)日：1993-02-26
申请号：JP26000284
申请日：1984-12-11
申请人： KOGYO GIJUTSUIN
发明人： MURAMATSU SHINICHI , SAITO TADASHI , SHIMADA JUICHI , MATSUBARA SUNAO , NAKAMURA NOBUO , ITO HARUO
IPC分类号： H01L31/04 , H01L27/142 , H01L31/046 , H01L31/075

9. 发明专利

JPH0361218B2 失效
公开(公告)号：JPH0361218B2
公开(公告)日：1991-09-19
申请号：JP4753485
申请日：1985-03-12
申请人： KOGYO GIJUTSUIN
发明人： KUGA SHIGEKI , MORISHITA TARO , NAKAMURA NOBUO , OOSAKI MIKIO
IPC分类号： G06F17/21

10. 发明专利

JPS633447B2 失效
公开(公告)号：JPS633447B2
公开(公告)日：1988-01-23
申请号：JP8991779
申请日：1979-07-17
申请人： KOGYO GIJUTSUIN
发明人： KETSUSAKO MITSUNORI , ITO HARUO , SAITO TADASHI , NAKAMURA NOBUO , TOKUYAMA TAKASHI
IPC分类号： H01L21/22 , H01L21/225 , H01L21/265 , H01L31/04

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