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1. 发明专利

JPH065780B2 失效
公开(公告)号：JPH065780B2
公开(公告)日：1994-01-19
申请号：JP21632984
申请日：1984-10-17
申请人： KOGYO GIJUTSUIN
发明人： MATSUBARA SUNAO , SAITO TADASHI , SHIMADA JUICHI , MURAMATSU SHINICHI , ITO HARUO , NAKAMURA NOBUO
IPC分类号： H01L31/04 , H01L31/18

2. 发明专利

JPH0262482B2 失效
公开(公告)号：JPH0262482B2
公开(公告)日：1990-12-25
申请号：JP14210482
申请日：1982-08-18
申请人： KOGYO GIJUTSUIN
发明人： NAKAMURA NOBUO , SHIMADA JUICHI , MATSUBARA SUNAO , MURAMATSU SHINICHI , UTAKA MASATOSHI
IPC分类号： C23C14/14 , C01B33/02 , C01B33/021 , C23C16/24 , H01L21/20 , H01L21/203 , H01L21/205

3. 发明专利

JPS6310592B2 失效
公开(公告)号：JPS6310592B2
公开(公告)日：1988-03-08
申请号：JP21699182
申请日：1982-12-13
申请人： KOGYO GIJUTSUIN
发明人： NAKAMURA NOBUO , MATSUBARA SUNAO , UTAKA MASATOSHI , SHIMADA JUICHI , GOTO AKIRA
IPC分类号： H01L31/04 , H01L31/06 , H01L31/075 , H01L31/077 , H01L31/18 , H01L31/20

4. 发明专利

JPS6037788A SOLAR BATTERY 失效
公开(公告)号：JPS6037788A
公开(公告)日：1985-02-27
申请号：JP14503283
申请日：1983-08-10
申请人： KOGYO GIJUTSUIN
发明人： MATSUBARA SUNAO , SHIMADA JIYUICHI , NAKAMURA NOBUO , UTAKA MASATOSHI
IPC分类号： H01L31/04 , H01L31/056 , H01L31/06 , H01L31/075
摘要： PURPOSE:To enable the further increase in efficiency by sandwiching an I type layer between a P type layer and an N type layer which have band gaps larger than that of the I type layer, the active layer. CONSTITUTION:A P type amorphous Si0.75C0.25 film 3 having a band gap Ep: 2.0eV is formed on the clear electrode 2 of a glass substrate 1. Next, the I type amorphous Si film 4 having a band gap Ei: 1.8eV is formed. Further, the film having a band gap En: 2.0eV is formed as an N type amorphous Si0.7N0.3 film 5. Finally, an Ag electrode 6 of large effect of light reflection is formed as the back electrode. Such a structure enables the N-layer to become transparent to a light transmitting through the I-layer because of its band gap wider than that of the I-layer and then to reflect the light on the electrode 6, resulting in photo absorption to the I-layer again. In this case, the lifetime of carriers generating in the I-layer is longer than that of the carriers in the N-layer. Therefore, further increase in efficiency is enabled.

5. 发明专利

JPS6037722A THIN FILM FORMATION 失效
公开(公告)号：JPS6037722A
公开(公告)日：1985-02-27
申请号：JP14503383
申请日：1983-08-10
申请人： KOGYO GIJUTSUIN
发明人： SHIMADA JIYUICHI , NAKAMURA NOBUO , MATSUBARA SUNAO , MATSUBARA HIROKAZU , UTAKA MASATOSHI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0248
摘要： PURPOSE:To improve response characteristic of a substrate temperature due to introduction of gas, improve uniform heating of a substrate and obtain a homogeneous thin film by having heated at least part of the gas when a thin film is formed on the substrate causing chemical reaction in plural kinds of gases. CONSTITUTION:In a reaction container 21, a discharge electrode 22 and a substrate holder 23 are installed in a specific interval and a substrate 27 on which a thin film is to be formed is mounted on the holder 23. Reaction gas is not flowed into the reaction container 21 and voltage from a high frequency power source 25 is not applied. A heater 24 which is provided on the back of the holder 23 heats the substrate 27 to approx. 250 deg.C. Later, the pressure in the container 21 is made approx. 1 Torr using an exhaust system which is not illustrated and SiH4 gas is supplied from a gas inlet 26 while heated by a heater 27' when the temperature is balanced whereby an amorphous Si film is formed on the substrate 27. In this way, the deposit speed of the Si film is increased and the Si film which has homogenous film quality is obtained.

6. 发明专利

JPS6025224A PLASMA UTILIZING DEVICE 失效
公开(公告)号：JPS6025224A
公开(公告)日：1985-02-08
申请号：JP13199783
申请日：1983-07-21
申请人： KOGYO GIJUTSUIN
发明人： UTAKA MASATOSHI , MURAMATSU SHINICHI , NAKAMURA NOBUO , MATSUBARA SUNAO , SHIMADA JIYUICHI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/20
摘要： PURPOSE:To reduce deterioration of the characteristic of a forming amorphous film according to impurities, and to reduce extremely the contamination and doping of a solar cell from adherends by a method wherein substrate holders are arranged by hanging respectively the bent parts thereof to linear type discharge electrodes, and plasma is generated by applying a high-frequency voltage between the discharge electrodes. CONSTITUTION:Substrates 5 are equipped on substrate holders 4, the holders thereof are hanged to exposing electrodes 6 connected to a high-frequency electric power source E, and put in a core tube 2. After the core tube 2 is exhausted to a vacuum, monosilane of 50cc/min and diborane of 100cc/min are flowed to make pressure to 1Torr, and a high-frequency voltage is applied between the electrode lead wires 8. Accordingly, plasma is generated between the electrodes 4 using both as the substrate holders to form P type amorphous Si layers at 20mm. thickness. Monosilane only is flowed in succession to form an I type layer at 500mm. thickness, monosilane and phosphine of 100cc/ min are flowed finally to form an N type layer at 10mm. thickness, and taken out from a reaction oven. After then, an ITO (indium tin oxide) is evaporated at 100mm. thickness on the surface of the N type layer as a transparently conductive film to manufacture P-I-N structural solar cells.

7. 发明专利

JPH0515073B2 失效
公开(公告)号：JPH0515073B2
公开(公告)日：1993-02-26
申请号：JP26000284
申请日：1984-12-11
申请人： KOGYO GIJUTSUIN
发明人： MURAMATSU SHINICHI , SAITO TADASHI , SHIMADA JUICHI , MATSUBARA SUNAO , NAKAMURA NOBUO , ITO HARUO
IPC分类号： H01L31/04 , H01L27/142 , H01L31/046 , H01L31/075

8. 发明专利

JPH0428786B2 失效
公开(公告)号：JPH0428786B2
公开(公告)日：1992-05-15
申请号：JP23942685
申请日：1985-10-28
申请人： KOGYO GIJUTSUIN
发明人： NAKAMURA NOBUO , SHIMADA JUICHI , MATSUBARA SUNAO , ITO HARUO , MURAMATSU SHINICHI
IPC分类号： C23C16/50 , H05B7/20

9. 发明专利

JPH0249009B2 失效
公开(公告)号：JPH0249009B2
公开(公告)日：1990-10-26
申请号：JP13199783
申请日：1983-07-21
申请人： KOGYO GIJUTSUIN
发明人： UTAKA MASATOSHI , MURAMATSU SHINICHI , NAKAMURA NOBUO , MATSUBARA SUNAO , SHIMADA JUICHI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/20

10. 发明专利

JPS6338874B2 失效
公开(公告)号：JPS6338874B2
公开(公告)日：1988-08-02
申请号：JP6176582
申请日：1982-04-15
申请人： KOGYO GIJUTSUIN
发明人： MATSUBARA SUNAO , SHIMADA JUICHI , SAIKI ATSUSHI
IPC分类号： H01L31/04 , H01L31/0392

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